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1. 发明申请

US20100126584A1 SOLAR CELLS AND SOLAR CELL MODULES 审中-公开
标题翻译：太阳能电池和太阳能电池模块
公开(公告)号：US20100126584A1
公开(公告)日：2010-05-27
申请号：US12619042
申请日：2009-11-16
申请人： Kwang-Soo Seol , Yoon-Dong Park
发明人： Kwang-Soo Seol , Yoon-Dong Park
IPC分类号： H01L31/00
CPC分类号： H01L31/03529 , G02B6/12007 , H01L31/035281 , H01L31/0543 , H01L31/0547 , Y02E10/52
摘要： A solar cell module includes a solar cell provided at a center area of a support to expose an edge area of the support. An optical waveguide layer is provided on the edge area of the support to concentrate light to the solar cell.
摘要翻译：太阳能电池模块包括设置在支撑件的中心区域以暴露支撑件的边缘区域的太阳能电池。在支撑体的边缘区域设置光波导层，以将光聚集到太阳能电池。

2. 发明申请

US20130020463A1 IMAGE-SENSING DEVICES AND METHODS OF OPERATING THE SAME 有权
标题翻译：图像感测装置及其操作方法
公开(公告)号：US20130020463A1
公开(公告)日：2013-01-24
申请号：US13550838
申请日：2012-07-17
申请人： Tae-Yon Lee , Yoon-Dong Park , Yong-Jei Lee , Seoung-Hyun Kim , Joo-Yeong Gong , Sung-Kwon Hong
发明人： Tae-Yon Lee , Yoon-Dong Park , Yong-Jei Lee , Seoung-Hyun Kim , Joo-Yeong Gong , Sung-Kwon Hong
IPC分类号： G01J1/44
CPC分类号： H04N5/357 , H04N5/3696 , H04N5/3745 , H04N5/378
摘要： In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.
摘要翻译：在操作图像传感器的方法中，在对浮动扩散区域施加复位电压之后，对浮动扩散区域的噪声电压进行采样。在对噪声电压进行采样之后，存储光电荷的存储区域与浮动扩散区域电连接，并且在存储区域和浮动扩散区域电气化之后对浮动扩散区域的解调电压进行采样，连接的。基于噪声电压和解调电压确定电压。

3. 发明申请

US20120236121A1 Methods of Operating a Three-Dimensional Image Sensor Including a Plurality of Depth Pixels 审中-公开
标题翻译：包含多个深度像素的三维图像传感器的操作方法
公开(公告)号：US20120236121A1
公开(公告)日：2012-09-20
申请号：US13420862
申请日：2012-03-15
申请人： Yoon-Dong Park , Eric R. Fossum
发明人： Yoon-Dong Park , Eric R. Fossum
IPC分类号： H04N13/02
CPC分类号： H04N13/271 , H04N13/254
摘要： In a method of operating a three-dimensional image sensor according to example embodiments, modulated light is emitted to an object of interest, the modulated light that is reflected from the object of interest is detected using a plurality of depth pixels, and a plurality of pixel group outputs respectively corresponding to a plurality of pixel groups are generated based on the detected modulated light by grouping the plurality of depth pixels into the plurality of pixel groups including a first pixel group and a second pixel group that have different sizes from each other.
摘要翻译：在根据示例性实施例的操作三维图像传感器的方法中，调制光被发射到感兴趣的对象，使用多个深度像素来检测从感兴趣对象反射的调制光，并且多个通过将多个深度像素分组为包括彼此不同大小的第一像素组和第二像素组的多个像素组，基于检测到的调制光来生成分别对应于多个像素组的像素组输出。

4. 发明申请

US20100320515A1 High sensitivity image sensors and methods of operating the same 有权
标题翻译：高灵敏度图像传感器及其操作方法
公开(公告)号：US20100320515A1
公开(公告)日：2010-12-23
申请号：US12662327
申请日：2010-04-12
申请人： Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
发明人： Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
IPC分类号： H01L27/146
CPC分类号： H01L31/112 , H01L27/14609 , H04N5/335 , H04N5/374
摘要： A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions.)
摘要翻译：包括像素的高灵敏度图像传感器，包括单电子场效应晶体管（SEFET）的像素，在第二导电型衬底中包括第一导电类型阱的SEFET，以及阱中的第二导电类型源极和漏极区域在源极和漏极区域之间的阱中的导电型栅极区）。

5. 发明授权

US07507674B2 Memory device including resistance change layer as storage node and method(s) for making the same 有权
标题翻译：存储器件包括作为存储节点的电阻变化层及其制造方法
公开(公告)号：US07507674B2
公开(公告)日：2009-03-24
申请号：US11270565
申请日：2005-11-10
申请人： Yoon-Dong Park , Won-Joo Kim , Sang-Hun Jeon
发明人： Yoon-Dong Park , Won-Joo Kim , Sang-Hun Jeon
IPC分类号： H01L21/461
CPC分类号： H01L27/24 , Y10S438/947
摘要： A method for manufacturing a memory device including a resistance change layer as a storage node according to example embodiment(s) of the present invention and a memory device made by the method(s) are provided. Pursuant to example embodiments of the present invention, the method may include stacking (sequentially or otherwise) a conductive material layer, a diode layer and a data storage layer on a bottom layer, forming a first material layer on the data storage layer, forming a first hole exposing the data storage layer in the first material layer, forming a first spacer with a second material layer on the sidewall of the first hole, filling the first hole with a third material layer and covering the first spacer; removing the first material layer, forming a second spacer with a fourth material layer on the sidewall of the first spacer; removing the third material layer, and forming a second hole exposing the bottom layer in a first stack structure using the first and second spacers as a mask. These operations may result in the formation of bit lines and word lines as described.
摘要翻译：提供一种用于制造包括根据本发明的示例性实施例的作为存储节点的电阻变化层的存储器件的方法和由该方法制造的存储器件。根据本发明的示例性实施例，该方法可以包括在底层上层叠（顺序地或以其他方式）导电材料层，二极管层和数据存储层，在数据存储层上形成第一材料层，形成第一孔暴露第一材料层中的数据存储层，在第一孔的侧壁上形成具有第二材料层的第一间隔物，用第三材料层填充第一孔并覆盖第一间隔物; 去除所述第一材料层，在所述第一间隔物的侧壁上形成具有第四材料层的第二间隔物; 去除第三材料层，并且使用第一和第二间隔件作为掩模，形成以第一堆叠结构暴露底层的第二孔。这些操作可能导致如所描述的位线和字线的形成。

6. 发明申请

US20070222036A1 Semiconductor memory device and methods of manufacturing and operating the same 有权
标题翻译：半导体存储器件及其制造和操作方法
公开(公告)号：US20070222036A1
公开(公告)日：2007-09-27
申请号：US11723490
申请日：2007-03-20
申请人： Yoon-Dong Park , Suk-PiI Kim , Won-Joo Kim
发明人： Yoon-Dong Park , Suk-PiI Kim , Won-Joo Kim
IPC分类号： H01L29/06
CPC分类号： H01L27/105 , H01L27/101 , H01L27/1052 , H01L27/10876 , H01L27/10879 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L27/1159 , H01L27/24 , H01L29/785
摘要： A semiconductor memory device and methods of manufacturing and operating the same may be provided. The semiconductor memory device may include a substrate, at least a pair of fins protruding from the semiconductor substrate and facing each other with a gap between fins of the pair of fins, an insulating layer formed between the pair of the fins, a storage node formed on the pair of fins and/or a surface of a portion of the insulating layer, and/or a gate electrode formed on the storage node.
摘要翻译：可以提供半导体存储器件及其制造和操作的方法。半导体存储器件可以包括基板，至少一对翅片，其从半导体基板突出并且彼此面对，具有在所述一对翅片的翅片之间的间隙;形成在所述一对翅片之间的绝缘层，形成的存储节点在所述一对翅片和/或所述绝缘层的一部分的表面上，和/或形成在所述存储节点上的栅电极。

7. 发明申请

US20070181959A1 Semiconductor device having gate-all-around structure and method of fabricating the same 有权
标题翻译：具有栅极全绕结构的半导体器件及其制造方法
公开(公告)号：US20070181959A1
公开(公告)日：2007-08-09
申请号：US11653863
申请日：2007-01-17
申请人： Yoon-Dong Park , Suk-Pil Kim
发明人： Yoon-Dong Park , Suk-Pil Kim
IPC分类号： H01L29/76
CPC分类号： H01L29/785 , H01L29/42392 , H01L29/78639
摘要： Semiconductor devices having a gate-all-around (GAA) structure capable of higher operating performance may be provided. A semiconductor device may include a semiconductor substrate, at least one gate electrode, and at least one gate insulating layer. The semiconductor substrate may have a body, at least one supporting post protruding from the body, and at least one pair of fins separated from the body, wherein both ends of each fin of the at least one pair of fins are connected to and supported by the at least one supporting post. The at least one gate electrode may enclose a portion of at least one fin of the at least one pair of fins of the semiconductor substrate, and may be insulated from the semiconductor substrate. The at least one gate insulating layer may be interposed between the at least one gate electrode and the at least one pair of fins of the semiconductor substrate.
摘要翻译：可以提供具有能够具有更高操作性能的全能（GAA）结构的半导体器件。半导体器件可以包括半导体衬底，至少一个栅电极和至少一个栅极绝缘层。半导体衬底可以具有本体，从主体突出的至少一个支撑柱和与主体分离的至少一对翅片，其中至少一对翅片的每个翅片的两端连接并由其支撑所述至少一个支撑柱。至少一个栅电极可以包围半导体衬底的至少一对散热片中的至少一个鳍片的一部分，并且可以与半导体衬底绝缘。所述至少一个栅极绝缘层可以插入在所述至少一个栅电极和所述半导体衬底的所述至少一对鳍之间。

8. 发明申请

US20060110877A1 Memory device including resistance change layer as storage node and method(s) for making the same 有权
公开(公告)号：US20060110877A1
公开(公告)日：2006-05-25
申请号：US11270565
申请日：2005-11-10
申请人： Yoon-Dong Park , Won-Joo Kim , Sang-Hun Jeon
发明人： Yoon-Dong Park , Won-Joo Kim , Sang-Hun Jeon
IPC分类号： H01L21/8244
CPC分类号： H01L27/24 , Y10S438/947
摘要： A method for manufacturing a memory device including a resistance change layer as a storage node according to example embodiment(s) of the present invention and a memory device made by the method(s) are provided. Pursuant to example embodiments of the present invention, the method may include stacking (sequentially or otherwise) a conductive material layer, a diode layer and a data storage layer on a bottom layer, forming a first material layer on the data storage layer, forming a first hole exposing the data storage layer in the first material layer, forming a first spacer with a second material layer on the sidewall of the first hole, filling the first hole with a third material layer and covering the first spacer; removing the first material layer, forming a second spacer with a fourth material layer on the sidewall of the first spacer; removing the third material layer, and forming a second hole exposing the bottom layer in a first stack structure using the first and second spacers as a mask. These operations may result in the formation of bit lines and word lines as described.

9. 发明授权

US10602086B2 Methods of operating image sensors 有权
公开(公告)号：US10602086B2
公开(公告)日：2020-03-24
申请号：US14883453
申请日：2015-10-14
申请人： Seung-Hyuk Chang , Yoon-Dong Park , Yong-Jei Lee
发明人： Seung-Hyuk Chang , Yoon-Dong Park , Yong-Jei Lee
IPC分类号： H04N5/351 , H04N5/225 , H04N13/254 , H04N13/271 , G01S7/481 , G01S17/06
摘要： A method of operating a three-dimensional image sensor may include: obtaining position information of an object using light emitted by a light source module, the three-dimensional image sensor including the light source module having a light source and a lens; and adjusting a relative position of the light source to the lens based on the obtained position information of the object. A method of operating an image sensor may include: obtaining position information of an object using light emitted by a light source module, the image sensor including the light source module; and adjusting an emission angle of the light emitted by the light source module based on the obtained position information.

10. 发明申请

US20110019049A1 PHOTO DETECTING APPARATUS AND UNIT PIXEL THEREOF 有权
标题翻译：照片检测装置及其像素
公开(公告)号：US20110019049A1
公开(公告)日：2011-01-27
申请号：US12844381
申请日：2010-07-27
申请人： Young Gu Jin , Kwan-Young Oh , Samuel Sungmok Lee , Kwang-Chol Choe , Se-Won Seo , Yoon-Dong Park , Eric Fossum , Kyoung-Lae Cho
发明人： Young Gu Jin , Kwan-Young Oh , Samuel Sungmok Lee , Kwang-Chol Choe , Se-Won Seo , Yoon-Dong Park , Eric Fossum , Kyoung-Lae Cho
IPC分类号： H01L27/146 , H04N5/335
CPC分类号： H01L27/14609 , G01S7/4863 , H01L27/14643 , H04N5/335 , H04N5/3741 , H04N5/378
摘要： A unit pixel of a photo detecting apparatus includes a photogate, a transfer gate and a floating diffusion region. The photogate includes a junction gate extending in a first direction and a plurality of finger gates extending from the junction gate in a second direction substantially perpendicular to the first direction. The transfer gate is formed adjacent to the junction gate. The floating diffusion region is formed adjacent to the first transfer gate.
摘要翻译：光检测装置的单位像素包括光栅，传输门和浮动扩散区。光栅包括沿第一方向延伸的接合栅极和从基本上垂直于第一方向的第二方向从接合栅极延伸的多个指状栅极。传输门形成在接合栅极附近。浮动扩散区域形成为与第一传输门相邻。

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