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    • 10. 发明授权
    • Image sensor and method for fabricating the same
    • 图像传感器及其制造方法
    • US07638347B2
    • 2009-12-29
    • US11508956
    • 2006-08-24
    • Kwang-Ho Lee
    • Kwang-Ho Lee
    • H01L21/00
    • H01L31/18H01L27/1463H01L27/14689
    • An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is formed in the substrate adjacent to a sidewall of the trench.
    • 图像传感器包括通过浅沟槽隔离(STI)工艺形成的沟槽,形成在沟槽中的衬底上的沟道阻挡层,填充在沟槽中的隔离结构,以及形成在衬底中的光电二极管, 沟。 在图像传感器的更详细的情况下,通过STI工艺在衬底中形成沟槽,并且沟槽中的衬底上形成沟道阻挡层。 在沟槽中形成隔离结构,并且在邻近沟槽侧壁的衬底中形成光电二极管。