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1. 发明专利

JP2008166404A Wash water for hydrophobic silicon wafer, and cleaning method using the same 审中-公开
标题翻译：用于疏水硅膜的洗涤水和使用其的清洁方法
公开(公告)号：JP2008166404A
公开(公告)日：2008-07-17
申请号：JP2006352646
申请日：2006-12-27
申请人： Kurita Water Ind Ltd , Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG , 栗田工業株式会社
发明人： MORI TAKASHI , SHINBARA TERUO , MORI YOSHIHIRO , MORITA HIROSHI , IDA JUNICHI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide rinsing water for hydrophobic silicon wafers capable of providing a high-quality silicon wafer by reducing the surface roughness generated in a cleaning process, and to provide a cleaning method that uses the rinsing water.
SOLUTION: The rinsing water is solution, containing not less than 1.0 ppm hydrogen gas, ammonium or TMAH, and hydrogen peroxide. When the rinsing water contains ammonia, the concentration of the ammonia ranges from 300 to 2,000 ppm, and the concentration of hydrogen peroxide ranges from 400 to 1,500 ppm, preferably not lower than (0.8 × ammonium concentration) ppm. When the rinsing water contains TMAH, preferably, the concentration is within a range of 50-2,000 ppm, and the concentration of hydrogen peroxide is not lower than (0.2 × TMAH concentration) ppm.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够通过降低在清洁过程中产生的表面粗糙度来提供高质量硅晶片的疏水性硅晶片的冲洗水，并提供使用冲洗水的清洁方法。解决方案：冲洗水是含有不少于1.0ppm氢气，铵或TMAH和过氧化氢的溶液。当漂洗水含有氨时，氨的浓度范围为300〜2000ppm，过氧化氢浓度为400〜1500ppm，优选为（0.8×铵浓度）ppm。当漂洗水含有TMAH时，优选浓度在50-2000ppm的范围内，并且过氧化氢浓度不低于（0.2×TMAH浓度）ppm。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2013247186A Ultrasonic cleaning method and ultrasonic cleaning device 有权
标题翻译：超声波清洗方法和超声波清洗装置
公开(公告)号：JP2013247186A
公开(公告)日：2013-12-09
申请号：JP2012118636
申请日：2012-05-24
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： UCHIBE MASASHI , MORI YOSHIHIRO , SHINBARA TERUO , KUBO ETSUKO
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , B08B3/12
摘要： PROBLEM TO BE SOLVED: To provide an ultrasonic cleaning method and an ultrasonic cleaning device capable of stably obtaining a high particle removing ratio.SOLUTION: An ultrasonic cleaning method for cleaning a cleaning object in liquid by radiating ultrasonic waves to the liquid in which gas is dissolved, has following steps. The liquid in which the gas is dissolved is prepared. The cleaning object is cleaned while radiating the ultrasonic waves to the liquid so that a region of a larger space change ratio of a refraction index of the liquid in which the gas is dissolved than when the ultrasonic waves are not radiated appears in a traveling direction of the ultrasonic waves.
摘要翻译：要解决的问题：提供能够稳定地获得高颗粒去除率的超声波清洗方法和超声波清洗装置。解决方案：一种超声波清洗方法，用于通过向气体中的液体辐射超声波来清洁液体中的清洁物体溶解，有以下步骤。制备气体溶解的液体。清洁对象被清洗，同时向液体辐射超声波，使得与不发射超声波相比，气体溶解的液体的折射率的更大的空间变化率的区域出现在超声波。

3. 发明专利

JP2013247184A Ultrasonic cleaning method and ultrasonic cleaning device 有权
标题翻译：超声波清洗方法和超声波清洗装置
公开(公告)号：JP2013247184A
公开(公告)日：2013-12-09
申请号：JP2012118634
申请日：2012-05-24
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： SHINBARA TERUO , KUBO ETSUKO , MORI YOSHIHIRO , UCHIBE MASASHI
IPC分类号： H01L21/304 , B08B3/12
CPC分类号： H01L21/67057 , B08B3/12
摘要： PROBLEM TO BE SOLVED: To provide an ultrasonic cleaning method and an ultrasonic cleaning device capable of stably obtaining a high particle removing ratio.SOLUTION: An ultrasonic cleaning method for cleaning a cleaning object in liquid 1 by radiating ultrasonic waves to the liquid 1 in which gas 2 is dissolved, has following steps. The liquid in which the gas 2 is dissolved is prepared. The liquid is agitated while radiating the ultrasonic waves to the liquid 1, so as to realize a condition that the bubbles containing the gas 2 dissolved in the liquid 1 continue to be generated. Under such a condition that the bubbles containing the gas 2 continue to be generated, the cleaning object is cleaned.
摘要翻译：要解决的问题：提供一种能够稳定地获得高颗粒去除率的超声波清洗方法和超声波清洗装置。解决方案：一种超声波清洗方法，用于通过向液体1中照射超声波来清洗液体1中的清洁物体，其中气体2溶解，具有以下步骤。制备气体2溶解的液体。搅拌液体同时向液体1辐射超声波，从而实现含有溶解在液体1中的气体2的气泡继续产生的状态。在包含气体2的气泡继续产生的条件下，清洁对象被清洁。

4. 发明专利

JP2008182201A Silicon etching method 审中-公开
标题翻译：硅蚀刻方法
公开(公告)号：JP2008182201A
公开(公告)日：2008-08-07
申请号：JP2007318555
申请日：2007-12-10
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： MORI YOSHIHIRO , SHIMOMURA BUNJI
IPC分类号： H01L21/66 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for quickly and highly precisely analyzing a contamination or an intentionally formed metal that is present on the surface of a silicon wafer or near the surface.
SOLUTION: In etching a silicon layer on the surface of a silicon wafer up to a given depth, a silicon-oxidizing gas and an HF gas are sprayed out of a nozzle tip onto the silicon wafer surface to carry out etching. This enables control over an etching position and an etching depth and quick etching.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于快速高精度地分析存在于硅晶片的表面上或表面附近的有意形成的金属的方法。解决方案：在将硅晶片表面上的硅层蚀刻到给定深度之前，将硅氧化气体和HF气体从喷嘴尖端喷射到硅晶片表面上以进行蚀刻。这使得能够控制蚀刻位置和蚀刻深度以及快速蚀刻。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2013157443A Cleaning method 审中-公开
标题翻译：清洁方法
公开(公告)号：JP2013157443A
公开(公告)日：2013-08-15
申请号：JP2012016722
申请日：2012-01-30
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： MORI YOSHIHIRO , SHINBARA TERUO , UCHIBE MASASHI , KUBO ETSUKO
IPC分类号： H01L21/304 , B08B3/12
CPC分类号： B08B3/12
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method with which removal efficiency can be improved for a foreign substance in a specific size.SOLUTION: A cleaning method includes a step for preparing a cleaning liquid (S10), and a step for cleaning an object to be cleaned by immersing the object to be cleaned in the cleaning liquid while irradiating the cleaning liquid with ultrasonic waves (S20). In the cleaning step (S20), in accordance with a size of a foreign substance to be removed with highest removal efficiency from the object to be cleaned, a concentration of nitrogen dissolved in the cleaning liquid is adjusted. Thus, a foreign substance in a specific size can be removed efficiently by changing the concentration of nitrogen dissolved in the cleaning liquid in accordance with a size of the foreign substance which is desired to be removed.
摘要翻译：要解决的问题：提供一种能够提高特定尺寸的异物的去除效率的清洁方法。解决方案：清洁方法包括制备清洗液的步骤（S10）和清洁物体的步骤通过在用超声波照射清洁液体的同时将待清洁物浸渍在清洗液中进行清洗（S20）。在清洗工序（S20）中，根据待清洗对象物的除去效率高的除去异物的大小，调整溶解在清洗液中的氮浓度。因此，通过根据期望除去的异物的大小改变溶解在清洗液中的氮的浓度，可以有效地除去特定尺寸的异物。

6. 发明专利

JP2010276398A Flameless atomic absorption spectrometry and aluminum analysis method 审中-公开
标题翻译：无源原子吸收光谱和铝分析方法
公开(公告)号：JP2010276398A
公开(公告)日：2010-12-09
申请号：JP2009127275
申请日：2009-05-27
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： MORI YOSHIHIRO
IPC分类号： G01N21/31
摘要： PROBLEM TO BE SOLVED: To provide a method for improving the analysis sensitivity of flameless atomic absorption spectrometry on a small amount of aluminum contained in a hydrogen fluoride-containing aqueous solution.
SOLUTION: The method for analyzing aluminum by flameless atomic absorption spectrometry analyzes aluminum contained in a hydrogen fluoride-containing aqueous solution, and includes introducing the hydrogen fluoride-containing aqueous solution and a strontium salt into an atomization reactor, and atomizing them by ashing to analyze the aluminum.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高无氟原子吸收光谱法对含氟化氢水溶液中所含的少量铝的分析灵敏度的方法。解决方案：通过无焰原子吸收光谱法分析铝的方法分析含氟化氢的水溶液中所含的铝，并且包括将含氟化氢的水溶液和锶盐引入雾化反应器中，并通过灰分分析铝。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2009141347A Method for performing wet chemical treatment on semiconductor wafer 有权
标题翻译：在半导体波导上进行湿化学处理的方法
公开(公告)号：JP2009141347A
公开(公告)日：2009-06-25
申请号：JP2008293975
申请日：2008-11-18
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： SCHWAB GUENTER , ZAPILKO CLEMENS , BUSCHHARDT THOMAS , FEIJOO DIEGO , SHINBARA TERUO , MORI YOSHIHIRO
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , B08B3/10 , H01L21/02057
摘要： PROBLEM TO BE SOLVED: To provide a method which is especially effective for performing wet chemical treatment on a semiconductor wafer by an improved diffusion of a composition of gas to a liquid film.
SOLUTION: The method includes steps (a) to rotate the semiconductor wafer; (b) to apply a cleaning liquid having bubbles having a diameter of 100 μm or less to the rotating semiconductor wafer to form a liquid film on the semiconductor wafer; (c) to expose the rotating semiconductor wafer into an atmosphere of gas having a reactive gas; and (d) to remove the liquid film. The improved cleaning of particles is attained by a combination of micro bubbles and cleaning chemicals for corroding a surface of silicon. The improved transfer (diffusion) of a reactive gas into the cleaning liquid makes them easy the oxidation and removal of an organic contaminant and metal containing contaminant. The protrusion of the liquid film in the center of the wafer is reduced by using the micro bubbles.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过改善气体组合物向液膜的扩散而对半导体晶片进行湿化学处理特别有效的方法。解决方案：该方法包括步骤（a）旋转半导体晶片; （b）向旋转的半导体晶片施加具有直径为100μm以下的气泡的清洗液，在半导体晶片上形成液膜; （c）将旋转的半导体晶片暴露于具有反应气体的气体气氛中; 和（d）去除液膜。通过微气泡和用于腐蚀硅表面的清洁化学品的组合来实现颗粒的改进的清洁。反应气体向清洗液中的改进的转移（扩散）使其易于氧化和除去有机污染物和含金属的污染物。通过使用微气泡来减少晶片中心的液膜的突起。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008153538A Silicon wafer surface damage evaluation method 审中-公开
标题翻译：硅表面损伤评估方法
公开(公告)号：JP2008153538A
公开(公告)日：2008-07-03
申请号：JP2006341715
申请日：2006-12-19
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： YAMADA YUTAKA , MORI YOSHIHIRO
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for detecting and evaluating surface damages of a silicon wafer reliably and with a high precision.
SOLUTION: The silicon wafer is treated with dilute hydrofluoric acid and the treated silicon wafer is immersed in dilute hydrofluoric acid containing Cu ions, cleaned with deionized water and then cleaned with SC1 after cleaning with deionized water. Pits formed in the surface of the silicon wafer are analyzed.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可靠且高精度地检测和评估硅晶片的表面损伤的方法。
解决方案：用稀氢氟酸处理硅晶片，将经处理的硅晶片浸入含有Cu离子的稀氢氟酸中，用去离子水清洗，然后用去离子水清洗后用SC1清洗。分析在硅晶片的表面形成的凹坑。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2013247183A Ultrasonic cleaning method and ultrasonic cleaning device 有权
标题翻译：超声波清洗方法和超声波清洗装置
公开(公告)号：JP2013247183A
公开(公告)日：2013-12-09
申请号：JP2012118633
申请日：2012-05-24
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： KUBO ETSUKO , SHINBARA TERUO , MORI YOSHIHIRO , UCHIBE MASASHI
IPC分类号： H01L21/304 , B08B3/12
CPC分类号： H01L21/02052 , B08B3/12
摘要： PROBLEM TO BE SOLVED: To provide an ultrasonic cleaning method and an ultrasonic cleaning device capable of stably obtaining a high particle removing ratio.SOLUTION: An ultrasonic cleaning method for cleaning a cleaning object in liquid 1 by radiating ultrasonic waves to the liquid 1 in which gas 2 is dissolved, has following steps. The liquid in which the gas 2 is dissolved is prepared. Bubbles are generated in the liquid 1 while radiating the ultrasonic waves to the liquid 1, so as to realize a condition that the bubbles containing the gas 2 dissolved in the liquid 1 continue to be generated. Under such a condition that the bubbles containing the gas 2 continue to be generated, the cleaning object is cleaned.
摘要翻译：要解决的问题：提供一种能够稳定地获得高颗粒去除率的超声波清洗方法和超声波清洗装置。解决方案：一种超声波清洗方法，用于通过向液体1中照射超声波来清洗液体1中的清洁物体，其中气体2溶解，具有以下步骤。制备气体2溶解的液体。在液体1中产生气泡，同时向液体1辐射超声波，从而实现含有溶解在液体1中的气体2的气泡继续产生的状态。在包含气体2的气泡继续产生的条件下，清洁对象被清洁。

10. 发明专利

JP2013135037A Ultrasonic cleaning method 有权
标题翻译：超声波清洗方法
公开(公告)号：JP2013135037A
公开(公告)日：2013-07-08
申请号：JP2011283338
申请日：2011-12-26
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： SHINBARA TERUO , TANABE ETSUKO , UCHIBE MASASHI , MORI YOSHIHIRO
IPC分类号： H01L21/304
CPC分类号： B08B3/12 , B06B2201/71 , H01L21/02052 , H01L21/67057
摘要： PROBLEM TO BE SOLVED: To provide an ultrasonic cleaning method stably ensuring high particle removal rate.SOLUTION: An ultrasonic cleaning method for cleaning an object to be cleaned in a liquid into which gas is dissolved by irradiating the liquid with ultrasonic waves includes following steps. A liquid having a first dissolved gas concentration is irradiated with ultrasonic waves. While the liquid is being irradiated with ultrasonic waves, the dissolved gas concentration in the liquid is changed from the first dissolved gas concentration to a second dissolved gas concentration. While the dissolved gas concentration in the liquid is changed from the first dissolved gas concentration to the second dissolved gas concentration, sonoluminescence is generated by irradiating the liquid with ultrasonic waves.
摘要翻译：要解决的问题：提供一种稳定地确保高颗粒去除速率的超声波清洗方法。解决方案：通过用超声波照射液体来清洁被溶解气体的液体中的待清洁物体的超声波清洗方法包括以下步骤。用超声波照射具有第一溶解气体浓度的液体。当液体被超声波照射时，液体中的溶解气体浓度从第一溶解气体浓度变为第二溶解气体浓度。当液体中的溶解气体浓度从第一溶解气体浓度变为第二溶解气体浓度时，通过用超声波照射液体来产生声致发光。

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