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1. 发明申请

US20060170731A1 Fluid injection device and method of fabricating the same 审中-公开
标题翻译：流体注射装置及其制造方法
公开(公告)号：US20060170731A1
公开(公告)日：2006-08-03
申请号：US11297432
申请日：2005-12-09
申请人： Kuo-Tong Ma , In-Yao Lee , Hung-Sheng Hu
发明人： Kuo-Tong Ma , In-Yao Lee , Hung-Sheng Hu
IPC分类号： B41J2/135
CPC分类号： B41J2/1628 , B41J2/1433 , B41J2/162 , B41J2/1629
摘要： A fluid injection device. The fluid injection device comprises a substrate, a chamber formed in the substrate, a structural layer covering the substrate and the chamber, at least one nozzle through the structural layer and connecting the chamber, an opening through the structural layer and connecting the terminal of the chamber, wherein an outlet is formed at the connecting region therebetween. A method of fabricating the fluid injection device is also disclosed.
摘要翻译：流体注射装置。流体注射装置包括基底，形成在基底中的腔室，覆盖基底和腔室的结构层，穿过结构层的至少一个喷嘴并连接腔室，穿过结构层的开口，其中在其间的连接区域处形成有出口。还公开了一种制造流体注射装置的方法。

2. 发明授权

US06789880B2 Microinjector for jetting droplets of different sizes 有权
标题翻译：用于喷射不同大小的液滴的微量注射器
公开(公告)号：US06789880B2
公开(公告)日：2004-09-14
申请号：US10064254
申请日：2002-06-26
申请人： Chung-Cheng Chou , Tsung-Ping Hsu , In-Yao Lee , Wei-Lin Chen , Hung-Sheng Hu
发明人： Chung-Cheng Chou , Tsung-Ping Hsu , In-Yao Lee , Wei-Lin Chen , Hung-Sheng Hu
IPC分类号： B41J214
CPC分类号： B41J2/14137 , B41J2/1412 , B41J2002/1437
摘要： A microinjector uses bubbles as virtual valves to eject droplets of different sizes. The microinjector is in fluid communications with a reservoir and has a substrate, an orifice layer, and a plurality of nozzles. The substrate has a manifold for receiving ink from the reservoir. The orifice layer is positioned on the top of the substrate so that a plurality of chambers are formed between the orifice layer and the top of the substrate. Each of the nozzles has an orifice and at least three bubble generating components. The bubble generating components are selectively driven by a driving circuit so that each nozzle can eject droplets of different sizes.
摘要翻译：微量注射器使用气泡作为虚拟阀来喷射不同尺寸的液滴。微型注射器与储存器流体连通，并具有基底，孔层和多个喷嘴。衬底具有用于从储存器接收墨水的歧管。孔层位于基板的顶部，使得在孔板层和基板的顶部之间形成多个室。每个喷嘴具有孔口和至少三个气泡产生部件。气泡生成部件由驱动电路选择性地驱动，使得每个喷嘴可喷射不同尺寸的液滴。

3. 发明授权

US06733616B2 Surface isolation device 失效
标题翻译：表面隔离装置
公开(公告)号：US06733616B2
公开(公告)日：2004-05-11
申请号：US10063878
申请日：2002-05-21
申请人： Hung-Sheng Hu , Tsung-Ping Hsu , Wei-Lin Chen , Chung-Cheng Chou , In-Yao Lee
发明人： Hung-Sheng Hu , Tsung-Ping Hsu , Wei-Lin Chen , Chung-Cheng Chou , In-Yao Lee
IPC分类号： H05H100
CPC分类号： H01L21/67126 , H01L21/30604 , H01L21/31111 , H01L21/67086
摘要： A surface isolation device for isolating a predetermined area of a second surface of a wafer from an etching solution while the etching solution etches a first surface of the wafer to form a plurality of manifolds in the wafer. The surface isolation device has a base for positioning the wafer, a fixture for fixing the wafer on the base, and an isolation ring positioned on the base for isolating the predetermined area from the etching solution. When the fixture fixes the wafer on the base, the wafer sticks to the isolation ring, forming a seal that isolates the predetermined area from the etching solution.
摘要翻译：一种表面隔离装置，用于在蚀刻溶液蚀刻晶片的第一表面以在晶片中形成多个歧管时，将晶片的第二表面的预定区域与蚀刻溶液隔离。表面隔离装置具有用于定位晶片的基座，用于将晶片固定在基座上的固定器，以及位于基座上用于将预定区域与蚀刻溶液隔离的隔离环。当夹具将晶片固定在基座上时，晶片粘附到隔离环上，形成将预定面积与蚀刻溶液隔离的密封。

4. 发明申请

US20060284932A1 Fluid injector and method of manufacturing the same 失效
标题翻译：流体注射器及其制造方法
公开(公告)号：US20060284932A1
公开(公告)日：2006-12-21
申请号：US11372964
申请日：2006-03-09
申请人： Hung-Sheng Hu , Wei-Lin Chen , In-Yao Lee , Tsung-Ping Hsu , Chung-Cheng Chou , ShangShi Wu
发明人： Hung-Sheng Hu , Wei-Lin Chen , In-Yao Lee , Tsung-Ping Hsu , Chung-Cheng Chou , ShangShi Wu
IPC分类号： B41J2/04
CPC分类号： B41J2/14137 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49401
摘要： A fluid injector and method of manufacturing the same. The fluid injector comprises a base, a first through hole, a bubble generator, a passivation layer, and a metal layer. The base includes a chamber and a surface. The first through hole communicates with the chamber, and is disposed in the base. The bubble generator is disposed on the surface near the first through hole, and is located outside the chamber. The passivation layer is disposed on the surface. The metal layer defines a second through hole, and is disposed on the passivation layer outside the chamber. The second through hole communicates with the first through hole.
摘要翻译：一种流体注射器及其制造方法。流体注射器包括底座，第一通孔，气泡发生器，钝化层和金属层。底座包括一个腔室和一个表面。第一通孔与腔室连通，并设置在基座中。气泡发生器设置在靠近第一通孔的表面上，并且位于室外。钝化层设置在表面上。金属层限定第二通孔，并且设置在室外的钝化层上。第二通孔与第一通孔连通。

5. 发明授权

US07513042B2 Method for fluid injector 失效
标题翻译：流体注射器的方法
公开(公告)号：US07513042B2
公开(公告)日：2009-04-07
申请号：US11372964
申请日：2006-03-09
申请人： Hung-Sheng Hu , Wei-Lin Chen , In-Yao Lee , Tsung-Ping Hsu , Chung-Cheng Chou , ShangShi Wu
发明人： Hung-Sheng Hu , Wei-Lin Chen , In-Yao Lee , Tsung-Ping Hsu , Chung-Cheng Chou , ShangShi Wu
IPC分类号： B21D53/76 , B41J2/04
CPC分类号： B41J2/14137 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49401
摘要： A fluid injector and method of manufacturing the same. The fluid injector comprises a base, a first through hole, a bubble generator, a passivation layer, and a metal layer. The base includes a chamber and a surface. The first through hole communicates with the chamber, and is disposed in the base. The bubble generator is disposed on the surface near the first through hole, and is located outside the chamber. The passivation layer is disposed on the surface. The metal layer defines a second through hole, and is disposed on the passivation layer outside the chamber. The second through hole communicates with the first through hole.
摘要翻译：一种流体注射器及其制造方法。流体注射器包括底座，第一通孔，气泡发生器，钝化层和金属层。底座包括一个腔室和一个表面。第一通孔与腔室连通，并设置在基座中。气泡发生器设置在靠近第一通孔的表面上，并且位于室外。钝化层设置在表面上。金属层限定第二通孔，并且设置在室外的钝化层上。第二通孔与第一通孔连通。

6. 发明申请

US20060236537A1 Method for fabricating a monolithic fluid injection device 审中-公开
公开(公告)号：US20060236537A1
公开(公告)日：2006-10-26
申请号：US11473842
申请日：2006-06-22
申请人： Wei-Lin Chen , Hung-Sheng Hu , In-Yao Lee
发明人： Wei-Lin Chen , Hung-Sheng Hu , In-Yao Lee
IPC分类号： H04R17/00
CPC分类号： B41J2/1639 , B41J2/14137 , B41J2/1601 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1646 , Y10T29/42 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49169 , Y10T29/49346 , Y10T29/49401
摘要： A method for fabricating a monolithic fluid injection device. The method includes providing a substrate with a patterned sacrificial layer thereon. Next, a patterned support layer and a patterned resistive layer, as a heating element, are formed on the substrate sequentially. A patterned insulating layer having a heating element contact via and a first opening is formed on the support layer. A patterned conductive layer is formed on the support layer and fills the heating element contact via as a signal transmitting circuit. A patterned protective layer having a signal transmitting circuit contact via and a second opening corresponding to the first opening is formed on the substrate. A manifold is formed by wet etching the back of the substrate to expose the sacrificial layer. A chamber is formed by removing the sacrificial layer in the wet etching process. Finally, an opening connecting the chamber is formed by etching the support layer along the second opening.

7. 发明授权

US07089665B2 Method for fabricating a monolithic fluid injection device 失效
标题翻译：用于制造单片流体注射装置的方法
公开(公告)号：US07089665B2
公开(公告)日：2006-08-15
申请号：US10868605
申请日：2004-06-15
申请人： Wei-Lin Chen , Hung-Sheng Hu , In-Yao Lee
发明人： Wei-Lin Chen , Hung-Sheng Hu , In-Yao Lee
IPC分类号： B21D53/00 , G01D15/00
CPC分类号： B41J2/1639 , B41J2/14137 , B41J2/1601 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1646 , Y10T29/42 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49169 , Y10T29/49346 , Y10T29/49401
摘要： A method for fabricating a monolithic fluid injection device. The method includes providing a substrate with a patterned sacrificial layer thereon. Next, a patterned support layer and a patterned resistive layer, as a heating element, are formed on the substrate sequentially. A patterned insulating layer having a heating element contact via and a first opening is formed on the support layer. A patterned conductive layer is formed on the support layer and fills the heating element contact via as a signal transmitting circuit. A patterned protective layer having a signal transmitting circuit contact via and a second opening corresponding to the first opening is formed on the substrate. A manifold is formed by wet etching the back of the substrate to expose the sacrificial layer. A chamber is formed by removing the sacrificial layer in the wet etching process. Finally, an opening connecting the chamber is formed by etching the support layer along the second opening.
摘要翻译：一种单片流体注射装置的制造方法。该方法包括在其上提供具有图案化牺牲层的衬底。接下来，依次在基板上形成作为加热元件的图案化支撑层和图案化电阻层。在支撑层上形成具有加热元件接触通孔和第一开口的图案化绝缘层。图案化的导电层形成在支撑层上，并且作为信号传输电路填充加热元件接触孔。在基板上形成具有信号传输电路接触通孔和对应于第一开口的第二开口的图案保护层。通过湿法蚀刻衬底的背面以暴露牺牲层来形成歧管。通过在湿蚀刻工艺中去除牺牲层来形成腔室。最后，通过沿着第二开口蚀刻支撑层来形成连接室的开口。

8. 发明授权

US07040740B2 Fluid injector and method of manufacturing the same 失效
标题翻译：流体注射器及其制造方法
公开(公告)号：US07040740B2
公开(公告)日：2006-05-09
申请号：US10618928
申请日：2003-07-11
申请人： Hung-Sheng Hu , Wei-Lin Chen , In-Yao Lee , Tsung-Ping Hsu , Chung-Cheng Chou , ShangShi Wu
发明人： Hung-Sheng Hu , Wei-Lin Chen , In-Yao Lee , Tsung-Ping Hsu , Chung-Cheng Chou , ShangShi Wu
IPC分类号： B41J2/05
CPC分类号： B41J2/1642 , B41J2/14137 , B41J2/1601 , B41J2/1631 , B41J2/1643 , B41J2002/1437
摘要： A fluid injector and method of manufacturing the same. The fluid injector includes a base, a first through hole, a bubble generator, a passivation layer, and a metal layer. The base includes a chamber and a surface. The first through hole communicates with the chamber, and is disposed in the base. The bubble generator is disposed on the surface near the first through hole, and is located outside the chamber. The passivation layer is disposed on the surface. The metal layer defines a second through hole, and is disposed on the passivation layer outside the chamber. The second through hole communicates with the first through hole.
摘要翻译：一种流体注射器及其制造方法。流体注射器包括基座，第一通孔，气泡发生器，钝化层和金属层。底座包括一个腔室和一个表面。第一通孔与腔室连通，并设置在基座中。气泡发生器设置在靠近第一通孔的表面上，并且位于室外。钝化层设置在表面上。金属层限定第二通孔，并且设置在室外的钝化层上。第二通孔与第一通孔连通。

9. 发明授权

US06588878B2 Jet and method thereof for ejecting droplets of different sizes 失效
公开(公告)号：US06588878B2
公开(公告)日：2003-07-08
申请号：US10063750
申请日：2002-05-10
申请人： Chung-Cheng Chou , Wei-Lin Chen , In-Yao Lee , Tsung-Ping Hsu , Hung-Sheng Hu
发明人： Chung-Cheng Chou , Wei-Lin Chen , In-Yao Lee , Tsung-Ping Hsu , Hung-Sheng Hu
IPC分类号： B41J215
CPC分类号： B41J2/1404 , B41J2/14137 , B41J2002/14177 , B41J2002/1437
摘要： A jet, and a method thereof, use bubbles as virtual valves to eject droplets of different sizes. The jet is in fluid communication with a reservoir and has a substrate, an orifice layer, first nozzles, and second nozzles. The substrate has a manifold for receiving ink from the reservoir. The orifice layer is positioned on the top of the substrate to form first chambers and second chambers. First orifices of the first nozzles and second orifices of the second nozzles are formed on the orifice layer. The jet has at least one of following characteristics: (a) the first chambers are larger than the second chambers; (b) an interval between two heating units of the first nozzle is larger than an interval between two heating units of the second nozzle; and (c) the apertures of the first orifices are larger than the apertures of the second orifices.

10. 发明授权

US06693045B2 High density wafer production method 失效
标题翻译：高密度晶圆生产方法
公开(公告)号：US06693045B2
公开(公告)日：2004-02-17
申请号：US09683692
申请日：2002-02-04
申请人： Tsung-Ping Hsu , In-Yao Lee , Hung-Sheng Hu , Chung-Cheng Chou , Wei-Lin Chen
发明人： Tsung-Ping Hsu , In-Yao Lee , Hung-Sheng Hu , Chung-Cheng Chou , Wei-Lin Chen
IPC分类号： H01L2100
CPC分类号： B81C1/00626 , B81C2201/0133 , B81C2201/016
摘要： A gradational etching method for high density wafer production. The gradational etching method acts on a substrate having a first passivation layer and a second passivation layer on a top surface and a bottom surface, respectively, of the substrate. A first etching process is performed to simultaneously etch the substrate and the first passivation layer to remove the first passivation layer. Finally, a second etching process is performed to etch the substrate to a designated depth that is used to control the thickness of the wafer after the second etching process.
摘要翻译：用于高密度晶片生产的渐变蚀刻方法。分级蚀刻方法分别作用于具有基板的顶表面和底表面上的第一钝化层和第二钝化层的基板上。执行第一蚀刻工艺以同时蚀刻衬底和第一钝化层以去除第一钝化层。最后，执行第二蚀刻工艺以将衬底蚀刻到用于在第二蚀刻工艺之后控制晶片的厚度的指定深度。

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