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1. 发明授权

US07773341B2 Laminated film for head applications 有权
标题翻译：用于头部应用的层压膜
公开(公告)号：US07773341B2
公开(公告)日：2010-08-10
申请号：US11825034
申请日：2007-07-03
申请人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
发明人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
IPC分类号： G11B5/33
CPC分类号： G11B5/3116 , G11B5/1278
摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).
摘要翻译：公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。使用最上层的Ru层作为CMP停止层。可以采用后退火工艺来进一步降低各向异性场（Hk）。

2. 发明申请

US20090009907A1 Laminated film for head applications 有权
标题翻译：用于头部应用的层压膜
公开(公告)号：US20090009907A1
公开(公告)日：2009-01-08
申请号：US11825034
申请日：2007-07-03
申请人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
发明人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
IPC分类号： G11B5/127 , G11B5/147
CPC分类号： G11B5/3116 , G11B5/1278
摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).
摘要翻译：公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。使用最上层的Ru层作为CMP停止层。可以采用后退火工艺来进一步降低各向异性场（Hk）。

3. 发明授权

US07979978B2 Method for manufacturing a self-aligned full side shield PMR 有权
标题翻译：制造自对准全侧护罩PMR的方法
公开(公告)号：US07979978B2
公开(公告)日：2011-07-19
申请号：US11728910
申请日：2007-03-27
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
IPC分类号： G11B5/187
CPC分类号： G11B5/1278 , G11B5/112 , G11B5/3146 , G11B5/315 , G11B5/3163 , G11B5/3169 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T428/1193
摘要： A process for forming the write pole of a PMR head is described. This write pole is symmetrically located relative to its side shields, This is accomplished, not through optical alignment, but by coating the pole with a uniform layer of non-magnetic material of a predetermined and precise thickness, followed by the formation of the shield layer around this.
摘要翻译：描述了用于形成PMR头的写入极的过程。该写入极相对于其侧屏对称地定位，这不是通过光学对准而是通过用预定和精确厚度的均匀的非磁性材料层涂覆极，然后形成屏蔽层围绕这一点。

4. 发明申请

US20070146928A1 Ultra thin seed layer for CPP or TMR structure 有权
标题翻译：用于CPP或TMR结构的超薄种子层
公开(公告)号：US20070146928A1
公开(公告)日：2007-06-28
申请号：US11317598
申请日：2005-12-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , Y10T29/49021
摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.
摘要翻译：已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

5. 发明授权

US07646568B2 Ultra thin seed layer for CPP or TMR structure 有权
标题翻译：用于CPP或TMR结构的超薄种子层
公开(公告)号：US07646568B2
公开(公告)日：2010-01-12
申请号：US11317598
申请日：2005-12-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , Y10T29/49021
摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.
摘要翻译：已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

6. 发明申请

US20080253035A1 Self-aligned full side shield PMR and method to make it 有权
标题翻译：自对准全侧盾PMR及其制作方法
公开(公告)号：US20080253035A1
公开(公告)日：2008-10-16
申请号：US11728910
申请日：2007-03-27
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
IPC分类号： G11B5/33 , B44C1/22
CPC分类号： G11B5/1278 , G11B5/112 , G11B5/3146 , G11B5/315 , G11B5/3163 , G11B5/3169 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T428/1193
摘要： A process for forming the write pole of a PMR head is described. This write pole is symmetrically located relative to its side shields, This is accomplished, not through optical alignment, but by coating the pole with a uniform layer of non-magnetic material of a predetermined and precise thickness, followed by the formation of the shield layer around this.
摘要翻译：描述了用于形成PMR头的写入极的过程。该写入极相对于其侧屏对称地定位，这不是通过光学对准而是通过用预定和精确厚度的均匀的非磁性材料层涂覆极，然后形成屏蔽层围绕这一点。

7. 发明授权

US08472138B2 Self-aligned full side shield PMR and method to make it 有权
标题翻译：自对准全侧盾PMR及其制作方法
公开(公告)号：US08472138B2
公开(公告)日：2013-06-25
申请号：US13135357
申请日：2011-07-01
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/112 , G11B5/3146 , G11B5/315 , G11B5/3163 , G11B5/3169 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T428/1193
摘要： A magnetic pole suitable for perpendicular magnetic recording is described. This write pole is symmetrically located relative to its side shields and has at least three additional surfaces that are disposed to lie in planes that are normal to the substrate's top surface.
摘要翻译：描述适用于垂直磁记录的磁极。该写入极相对于其侧屏对称地定位，并且具有至少三个额外的表面，其被设置为位于与基板顶表面垂直的平面中。

8. 发明申请

US20110262775A1 Self-aligned full side shield PMR and method to make it 有权
标题翻译：自对准全侧盾PMR及其制作方法
公开(公告)号：US20110262775A1
公开(公告)日：2011-10-27
申请号：US13135357
申请日：2011-07-01
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
IPC分类号： G11B5/33
CPC分类号： G11B5/1278 , G11B5/112 , G11B5/3146 , G11B5/315 , G11B5/3163 , G11B5/3169 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T428/1193
摘要： A magnetic pole suitable for perpendicular magnetic recording is described. This write pole is symmetrically located relative to its side shields and has at least three additional surfaces that are disposed to lie in planes that are normal to the substrate's top surface.
摘要翻译：描述适用于垂直磁记录的磁极。该写入极相对于其侧屏对称地定位，并且具有至少三个额外的表面，其被设置为位于与基板顶表面垂直的平面中。

9. 发明授权

US08728333B2 Method to fabricate small dimension devices for magnetic recording applications 有权
标题翻译：制造用于磁记录应用的小尺寸装置的方法
公开(公告)号：US08728333B2
公开(公告)日：2014-05-20
申请号：US12658662
申请日：2010-02-12
申请人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
发明人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
IPC分类号： B44C1/22 , B82Y25/00 , G11B5/31 , G01R33/09 , H01F41/30
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B5/398 , H01F10/3254 , H01F10/3259 , H01F41/308 , H01L43/12 , Y10T29/49021
摘要： A three step ion beam etch (IBE) sequence involving low energy (
摘要翻译：公开了涉及低能量（<300eV）的三步离子束蚀刻（IBE）序列，用于将传感器临界尺寸（自由层宽度= FLW）修整到小于50nm。第一个IBE步骤相对于传感器侧壁具有陡峭的入射角，占FLW降低的60％至90％。第二IBE步骤具有浅入射角和扫动运动，以从第一IBE步骤去除残留物并进一步修整侧壁。第三IBE步骤具有陡峭的入射角度，以从第二步骤去除损坏的侧壁部分，占FLW减少量的10％至40％。结果，FLW接近30nm，同时保持60％以上的高MR比和1.2ohm-μm2的低RA。通过改变一个或多个离子束入射角来操纵侧壁角。

10. 发明授权

US08611046B2 PMR writer with graded side shield 有权
标题翻译： PMR作家与分级侧盾
公开(公告)号：US08611046B2
公开(公告)日：2013-12-17
申请号：US12799131
申请日：2010-04-19
申请人： Yan Wu , Zhigang Bai , Moris Dovek , Cherng-Chyi Han , Min Li , Jianing Zhou , Jiun-Ting Lee , Min Zheng
发明人： Yan Wu , Zhigang Bai , Moris Dovek , Cherng-Chyi Han , Min Li , Jianing Zhou , Jiun-Ting Lee , Min Zheng
IPC分类号： G11B5/11 , G11B5/23 , G11B5/31
CPC分类号： G11B5/105 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a graded side shield that is conformal to the shape of the pole tip at an upper portion of the shield but not conformal to the pole tip at a lower portion. The shield includes a trailing shield, that is conformal to the trailing edge of the pole tip and may include a leading edge shield that magnetically connects two bottom ends of the graded side shield.
摘要翻译：垂直磁记录（PMR）头被制造成具有通过分级侧屏蔽横向屏蔽的极尖，该平面侧屏蔽保护层在屏蔽的上部处与极尖的形状保持一致，但在下部不与极尖共形。屏蔽件包括后挡板，其与电极尖端的后缘保持一致，并且可以包括磁性连接分级侧屏蔽件的两个底端的前缘屏蔽件。

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