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1. 发明授权

US06984477B2 Resist pattern forming apparatus and method thereof 失效
标题翻译：抗蚀剂图案形成装置及其方法
公开(公告)号：US06984477B2
公开(公告)日：2006-01-10
申请号：US09963527
申请日：2001-09-27
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03F9/00 , G03F7/20 , G03F7/30 , G03F7/40 , B05D3/12
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and an appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

2. 发明授权

US08231285B2 Substrate processing method and apparatus 有权
标题翻译：基板加工方法及装置
公开(公告)号：US08231285B2
公开(公告)日：2012-07-31
申请号：US12610907
申请日：2009-11-02
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B27/53
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

3. 发明授权

US07780366B2 Resist pattern forming method 有权
标题翻译：抗蚀图案形成方法
公开(公告)号：US07780366B2
公开(公告)日：2010-08-24
申请号：US11831622
申请日：2007-07-31
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B27/32
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

4. 发明授权

US07648292B2 Resist pattern forming method 有权
公开(公告)号：US07648292B2
公开(公告)日：2010-01-19
申请号：US11831622
申请日：2007-07-31
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B27/32
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

5. 发明授权

US07488127B2 Resist pattern forming apparatus and method thereof 有权
公开(公告)号：US07488127B2
公开(公告)日：2009-02-10
申请号：US11199215
申请日：2005-08-09
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B13/00 , G03B27/32
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.

6. 发明申请

US20050271382A1 Resist pattern forming apparatus and method thereof 有权
标题翻译：抗蚀剂图案形成装置及其方法
公开(公告)号：US20050271382A1
公开(公告)日：2005-12-08
申请号：US11199215
申请日：2005-08-09
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03F7/16 , B05C11/00 , B05C11/08 , B05D1/40 , B05D3/00 , G03F7/20 , G03F7/30 , H01L21/00 , H01L21/027 , G03C5/00
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.
摘要翻译：一种抗蚀剂图形形成装置，包括具有控制部分的控制器，所述控制部分控制具有涂覆单元和显影单元的涂布和显影装置的处理，并且与其连接的对准器，同时检查部分等至少测量选自多个测量项目中的一个，基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，底膜与抗蚀剂图案匹配的精度，显影后的缺陷，等等。测量的数据被传送到控制器。控制器根据抗蚀剂的膜厚度和开发后的线宽度等测量项目的对应数据选择修改参数，修改后的参数修改为执行。因此，通过减少操作者的工作量来促进修改操作，并且同时可以执行适当的修改。

7. 发明授权

US07867674B2 Substrate-processing apparatus, substrate-processing method, substrate-processing program, and computer-readable recording medium recorded with such program 有权
标题翻译：基板处理装置，基板处理方法，基板处理程序和记录有该程序的计算机可读记录介质
公开(公告)号：US07867674B2
公开(公告)日：2011-01-11
申请号：US12065829
申请日：2006-09-13
申请人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
发明人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
IPC分类号： G03C5/00 , G03F1/00 , H01L21/00
CPC分类号： G03F7/40 , G03F7/38
摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.
摘要翻译：图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。

8. 发明申请

US20090162759A1 SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING METHOD, SUBSTRATE-PROCESSING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDED WITH SUCH PROGRAM 有权
标题翻译：基板处理设备，基板处理方法，基板处理程序以及使用此程序记录的计算机可读记录介质
公开(公告)号：US20090162759A1
公开(公告)日：2009-06-25
申请号：US12065782
申请日：2006-09-13
申请人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
发明人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
IPC分类号： G03C5/00
CPC分类号： H01L21/67225 , G03F7/168 , G03F7/3071 , G03F7/40 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A pattern forming system 1 includes a checking apparatus 400, a storage device 502, and a control section 500. The checking apparatus 400 is configured to measure and check a state of a resist pattern formed on a substrate W after a developing process and output a first check result thus obtained, and to measure and check a state of a pattern formed on the substrate after an etching process and output a second check result thus obtained. The storage device 502 stores a correlation formula obtained from the first check result and the second check result. The control section 500 is configured to use the correlation formula to obtain a target value of the state of the pattern after the developing process from a target value of the state of the pattern after the etching process, and to use a difference between the target value of the state of the pattern after the developing process and the first check result to set a condition for the first heat process and/or the second heat process.
摘要翻译：图案形成系统1包括检查装置400，存储装置502和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的状态，并输出第一检查结果，并且在蚀刻处理之后测量和检查在基板上形成的图案的状态，并输出由此获得的第二检查结果。存储装置502存储从第一检查结果和第二检查结果获得的相关公式。控制部500被配置为使用相关公式从蚀刻处理之后的图案的状态的目标值获得显影处理之后的图案的状态的目标值，并且使用目标值的显影过程之后的图案状态和第一检查结果来设定第一加热处理和/或第二加热处理的条件。

9. 发明授权

US06593045B2 Substrate processing apparatus and method 有权
标题翻译：基板加工装置及方法
公开(公告)号：US06593045B2
公开(公告)日：2003-07-15
申请号：US09902159
申请日：2001-07-11
申请人： Norikatsu Sato , Kunie Ogata , Yoshio Kimura , Hiroshi Tomita , Seiji Nakashima , Hidehiko Kamiya
发明人： Norikatsu Sato , Kunie Ogata , Yoshio Kimura , Hiroshi Tomita , Seiji Nakashima , Hidehiko Kamiya
IPC分类号： G03F900
CPC分类号： H01L21/67161 , G01N21/9501 , H01L21/67178 , H01L21/67184 , H01L21/67778 , H01L21/67781 , Y10S414/136 , Y10S414/137 , Y10S414/141
摘要： A cassette station, a processing station having a coating unit and a developing unit, and an inspecting station having a film thickness inspecting apparatus and a defect inspecting apparatus are disposed in the direction approximately perpendicular to the direction of the disposition of cassettes of the cassette station in such a manner that the inspecting station is disposed midway between the cassette station and the processing station. In the structure, the inspecting station and the processing station are connected and wafers are automatically transferred among the stations, operations from the substrate process to the inspection can be simplified and the time period necessary therefore can be shortened.
摘要翻译：具有涂布单元和显影单元的盒式磁带站，具有膜厚度检查装置和缺陷检查装置的检查站沿大致垂直于盒式磁带机的盒的方向的方向设置以这样的方式，使得检查站位于盒站和处理站之间的中间。在结构中，检测站和处理站连接，晶片自动转移到站之间，可以简化从基板处理到检查的操作，从而可以缩短所需的时间。

10. 发明申请

US20090104548A1 SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING METHOD, SUBSTRATE-PROCESSING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDED WITH SUCH PROGRAM 有权
标题翻译：基板处理设备，基板处理方法，基板处理程序以及使用此程序记录的计算机可读记录介质
公开(公告)号：US20090104548A1
公开(公告)日：2009-04-23
申请号：US12065829
申请日：2006-09-13
申请人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
发明人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
IPC分类号： G03F7/20 , G03B27/52
CPC分类号： G03F7/40 , G03F7/38
摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.
摘要翻译：图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。

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