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1. 发明授权

US08067286B2 Methods of forming recessed access devices associated with semiconductor constructions 有权
标题翻译：形成与半导体结构相关联的凹陷接入设备的方法
公开(公告)号：US08067286B2
公开(公告)日：2011-11-29
申请号：US13012675
申请日：2011-01-24
申请人： Kunal R. Parekh , Suraj J. Mathew , Jigish D. Trivedi , John K. Zahurak , Sanh D. Tang
发明人： Kunal R. Parekh , Suraj J. Mathew , Jigish D. Trivedi , John K. Zahurak , Sanh D. Tang
IPC分类号： H01L21/336
CPC分类号： H01L27/10876 , H01L27/10823
摘要： The invention includes methods of forming recessed access devices. A substrate is provided to have recessed access device trenches therein. A pair of the recessed access device trenches are adjacent one another. Electrically conductive material is formed within the recessed access device trenches, and source/drain regions are formed proximate the electrically conductive material. The electrically conductive material and source/drain regions together are incorporated into a pair of adjacent recessed access devices. After the recessed access device trenches are formed within the substrate, an isolation region trench is formed between the adjacent recessed access devices and filled with electrically insulative material to form a trenched isolation region.
摘要翻译：本发明包括形成凹入进入装置的方法。提供基板以在其中具有凹入的接入装置沟槽。一对凹进的接入设备沟槽彼此相邻。导电材料形成在凹进的存取装置沟槽内，源极/漏极区域靠近导电材料形成。导电材料和源极/漏极区域一起被并入一对相邻的凹进入器件中。在凹陷的访问设备沟槽形成在衬底内之后，在相邻的凹进的访问设备之间形成隔离区沟槽，并且填充有电绝缘材料以形成沟槽隔离区域。

2. 发明授权

US06809014B2 Method to fabricate surface p-channel CMOS 有权
标题翻译：制造表面p沟道CMOS的方法
公开(公告)号：US06809014B2
公开(公告)日：2004-10-26
申请号：US09808261
申请日：2001-03-14
申请人： Suraj J. Mathew , Jigish D. Trivedi
发明人： Suraj J. Mathew , Jigish D. Trivedi
IPC分类号： H01L21425
CPC分类号： H01L21/823842 , H01L27/10873
摘要： An improved method of making CMOS surface channel transistors using fewer masking steps. In-situ doped poly silicon deposition can be used to reduce problems with poly depletion effects in transistor gates. In addition, using this method, the number of layers in each gate dielectric, the dielectric type, and dielectric thickness between n-channel and p-channel devices can be separately controlled. This method also allows the use of a lithography mask normally used to fabricate buried channel devices for use in fabricating surface channel devices, thus saving the manufacture of an additional mask.
摘要翻译：使用较少掩蔽步骤制造CMOS表面沟道晶体管的改进方法。可以使用原位掺杂的多晶硅沉积来减少晶体管栅极中的多晶硅耗尽效应的问题。此外，使用这种方法，可以单独地控制n沟道和p沟道器件之间的每个栅极电介质层中的层数，介电类型和电介质厚度。该方法还允许使用通常用于制造用于制造表面通道器件的掩埋通道器件的光刻掩模，从而节省了附加掩模的制造。

3. 发明授权

US07005342B2 Method to fabricate surface p-channel CMOS 失效
公开(公告)号：US07005342B2
公开(公告)日：2006-02-28
申请号：US10929284
申请日：2004-08-30
申请人： Suraj J. Mathew , Jigish D. Trivedi
发明人： Suraj J. Mathew , Jigish D. Trivedi
IPC分类号： H01L21/66 , H01L21/425 , H01L21/8238
CPC分类号： H01L21/823842 , H01L27/10873
摘要： An improved method of making CMOS surface channel transistors using fewer masking steps. In-situ doped poly silicon deposition can be used to reduce problems with poly depletion effects in transistor gates. In addition, using this method, the number of layers in each gate dielectric, the dielectric type, and dielectric thickness between n-channel and p-channel devices can be separately controlled. This method also allows the use of a lithography mask normally used to fabricate buried channel devices for use in fabricating surface channel devices, thus saving the manufacture of an additional mask.

4. 发明授权

US08450175B2 Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith 有权
标题翻译：形成垂直晶体管和至少与其电耦合的导线的方法
公开(公告)号：US08450175B2
公开(公告)日：2013-05-28
申请号：US13031829
申请日：2011-02-22
申请人： Jaydip Guha , Shyam Surthi , Suraj J. Mathew , Kamal M. Karda , Hung-Ming Tsai
发明人： Jaydip Guha , Shyam Surthi , Suraj J. Mathew , Kamal M. Karda , Hung-Ming Tsai
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/823487 , H01L27/108 , H01L27/10876 , H01L27/1104 , H01L29/41741 , H01L29/66666 , H01L29/66825 , H01L29/66833
摘要： Trenches are formed into semiconductive material. Masking material is formed laterally over at least elevationally inner sidewall portions of the trenches. Conductivity modifying impurity is implanted through bases of the trenches into semiconductive material there-below. Such impurity is diffused into the masking material received laterally over the elevationally inner sidewall portions of the trenches and into semiconductive material received between the trenches below a mid-channel portion. An elevationally inner source/drain is formed in the semiconductive material below the mid-channel portion. The inner source/drain portion includes said semiconductive material between the trenches which has the impurity therein. A conductive line is formed laterally over and electrically coupled to at least one of opposing sides of the inner source/drain. A gate is formed elevationally outward of and spaced from the conductive line and laterally adjacent the mid-channel portion. Other embodiments are disclosed.
摘要翻译：沟槽形成半导体材料。遮蔽材料横向形成在沟槽的至少垂直内侧壁部分上。电导率改性杂质通过沟槽的基底注入到下面的半导体材料中。这种杂质被扩散到横向覆盖在沟槽的顶部内侧壁部分上的掩蔽材料中，并且被扩散到半导体材料中，该半导体材料被容纳在中间通道部分下方的沟槽之间。在中间通道部分下方的半导体材料中形成一个正面内部源极/漏极。内部源极/漏极部分包括在其中具有杂质的沟槽之间的所述半导体材料。导电线横向形成并电耦合到内源/漏的相对侧中的至少一个。栅极形成在导电线的正上方并与导电线隔开并且横向邻近中间通道部分。公开了其他实施例。

5. 发明授权

US09059030B2 Memory cells having capacitor dielectric directly against a transistor source/drain region 有权
标题翻译：存储单元具有直接抵抗晶体管源极/漏极区域的电容器电介质
公开(公告)号：US09059030B2
公开(公告)日：2015-06-16
申请号：US13269304
申请日：2011-10-07
申请人： Kamal M. Karda , Suraj J. Mathew , Jaydip Guha
发明人： Kamal M. Karda , Suraj J. Mathew , Jaydip Guha
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L27/10832 , H01L21/02532 , H01L21/02595 , H01L21/02598 , H01L21/28525 , H01L27/10861 , H01L27/10873 , H01L29/945
摘要： A memory cell includes a transistor device comprising a pair of source/drains, a body comprising a channel, and a gate construction operatively proximate the channel. The memory cell includes a capacitor comprising a pair of capacitor electrodes having a capacitor dielectric there-between. One of the capacitor electrodes is the channel or is electrically coupled to the channel. The other of the capacitor electrodes includes a portion of the body other than the channel. Methods are also disclosed.
摘要翻译：存储单元包括晶体管器件，其包括一对源极/漏极，包括沟道的主体以及可操作地接近沟道的栅极结构。存储单元包括电容器，该电容器包括一对在其间具有电容器电介质的电容器电极。电容器电极之一是通道或电耦合到通道。电容器电极中的另一个包括主体而不是通道的一部分。还公开了方法。

6. 发明授权

US08455919B2 High density thyristor random access memory device and method 有权
标题翻译：高密度可控硅随机存取存储器件及方法
公开(公告)号：US08455919B2
公开(公告)日：2013-06-04
申请号：US12838803
申请日：2010-07-19
申请人： Suraj J. Mathew , Chandra Mouli
发明人： Suraj J. Mathew , Chandra Mouli
IPC分类号： H01L21/332 , H01L29/66
CPC分类号： H01L29/74
摘要： Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided allow trace wiring in a memory array to be formed on or near a surface of a memory device.
摘要翻译：显示存储器件和制造存储器件的方法。所示的方法和配置提供用于增加存储器密度的折叠和垂直存储器件。提供的方法允许存储器阵列中的迹线布线形成在存储器件的表面上或附近。

7. 发明申请

US20120214285A1 Methods Of Forming A Vertical Transistor And At Least A Conductive Line Electrically Coupled Therewith, Methods Of Forming Memory Cells, And Methods Of Forming Arrays Of Memory Cells 有权
标题翻译：形成垂直晶体管的方法和至少一个导电线电耦合的方法，形成记忆细胞的方法和形成记忆细胞阵列的方法
公开(公告)号：US20120214285A1
公开(公告)日：2012-08-23
申请号：US13031829
申请日：2011-02-22
申请人： Jaydip Guha , Shyam Surthi , Suraj J. Mathew , Kamal M. Karda , Hung-Ming Tsai
发明人： Jaydip Guha , Shyam Surthi , Suraj J. Mathew , Kamal M. Karda , Hung-Ming Tsai
IPC分类号： H01L21/336
CPC分类号： H01L21/823487 , H01L27/108 , H01L27/10876 , H01L27/1104 , H01L29/41741 , H01L29/66666 , H01L29/66825 , H01L29/66833
摘要： Trenches are formed into semiconductive material. Masking material is formed laterally over at least elevationally inner sidewall portions of the trenches. Conductivity modifying impurity is implanted through bases of the trenches into semiconductive material there-below. Such impurity is diffused into the masking material received laterally over the elevationally inner sidewall portions of the trenches and into semiconductive material received between the trenches below a mid-channel portion. An elevationally inner source/drain is formed in the semiconductive material below the mid-channel portion. The inner source/drain portion includes said semiconductive material between the trenches which has the impurity therein. A conductive line is formed laterally over and electrically coupled to at least one of opposing sides of the inner source/drain. A gate is formed elevationally outward of and spaced from the conductive line and laterally adjacent the mid-channel portion. Other embodiments are disclosed.
摘要翻译：沟槽形成半导体材料。遮蔽材料横向形成在沟槽的至少垂直内侧壁部分上。电导率改性杂质通过沟槽的基底注入到下面的半导体材料中。这种杂质被扩散到横向覆盖在沟槽的顶部内侧壁部分上的掩蔽材料中，并且被扩散到半导体材料中，该半导体材料被容纳在中间通道部分下方的沟槽之间。在中间通道部分下方的半导体材料中形成一个正面内部源极/漏极。内部源极/漏极部分包括在其中具有杂质的沟槽之间的所述半导体材料。导电线横向形成并电耦合到内源/漏的相对侧中的至少一个。栅极形成在导电线的正上方并与导电线隔开并且横向邻近中间通道部分。公开了其他实施例。

8. 发明授权

US08754443B2 High density thyristor random access memory device and method 有权
标题翻译：高密度可控硅随机存取存储器件及方法
公开(公告)号：US08754443B2
公开(公告)日：2014-06-17
申请号：US13621002
申请日：2012-09-15
申请人： Suraj J. Mathew , Chandra Mouli
发明人： Suraj J. Mathew , Chandra Mouli
IPC分类号： H01L29/74
CPC分类号： H01L29/74
摘要： Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided allow trace wiring in a memory array to be formed on or near a surface of a memory device.
摘要翻译：显示存储器件和制造存储器件的方法。所示的方法和配置提供用于增加存储器密度的折叠和垂直存储器件。提供的方法允许存储器阵列中的迹线布线形成在存储器件的表面上或附近。

9. 发明申请

US20130087840A1 Memory Cells And Methods Of Forming Memory Cells 有权
标题翻译：记忆细胞和形成记忆细胞的方法
公开(公告)号：US20130087840A1
公开(公告)日：2013-04-11
申请号：US13269304
申请日：2011-10-07
申请人： Kamal M. Karda , Suraj J. Mathew , Jaydip Guha
发明人： Kamal M. Karda , Suraj J. Mathew , Jaydip Guha
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/10832 , H01L21/02532 , H01L21/02595 , H01L21/02598 , H01L21/28525 , H01L27/10861 , H01L27/10873 , H01L29/945
摘要： A memory cell includes a transistor device comprising a pair of source/drains, a body comprising a channel, and a gate construction operatively proximate the channel. The memory cell includes a capacitor comprising a pair of capacitor electrodes having a capacitor dielectric there-between. One of the capacitor electrodes is the channel or is electrically coupled to the channel. The other of the capacitor electrodes includes a portion of the body other than the channel. Methods are also disclosed.
摘要翻译：存储单元包括晶体管器件，其包括一对源极/漏极，包括沟道的主体以及可操作地接近沟道的栅极结构。存储单元包括电容器，该电容器包括一对在其间具有电容器电介质的电容器电极。电容器电极之一是通道或电耦合到通道。电容器电极中的另一个包括主体而不是通道的一部分。还公开了方法。

10. 发明申请

US20120012892A1 HIGH DENSITY THYRISTOR RANDOM ACCESS MEMORY DEVICE AND METHOD 有权
标题翻译：高密度THYRISTOR随机访问存储器件及方法
公开(公告)号：US20120012892A1
公开(公告)日：2012-01-19
申请号：US12838803
申请日：2010-07-19
申请人： Suraj J. Mathew , Chandra Mouli
发明人： Suraj J. Mathew , Chandra Mouli
IPC分类号： H01L29/74 , H01L21/332
CPC分类号： H01L29/74
摘要： Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided allow trace wiring in a memory array to be formed on or near a surface of a memory device.
摘要翻译：显示存储器件和制造存储器件的方法。所示的方法和配置提供用于增加存储器密度的折叠和垂直存储器件。提供的方法允许存储器阵列中的迹线布线形成在存储器件的表面上或附近。

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