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    • 1. 发明申请
    • Methods of forming memory circuitry
    • 形成存储器电路的方法
    • US20070032011A1
    • 2007-02-08
    • US11196051
    • 2005-08-02
    • Kunal ParekhSuraj MathewSteve Cole
    • Kunal ParekhSuraj MathewSteve Cole
    • H01L21/8244
    • H01L29/6656H01L27/10882H01L27/10891H01L27/10894
    • The invention includes methods of forming memory circuitry. In one implementation, a substrate is provided which has a memory array circuitry area and a peripheral circuitry area. The memory array circuitry area comprises transistor gate lines having a first minimum line spacing. The peripheral circuitry area comprises transistor gate lines having a second minimum line spacing which is greater than the first minimum line spacing. Anisotropically etched insulative sidewall spacers are formed over opposing sidewalls of individual of said transistor gate lines within the peripheral circuitry area prior to forming anisotropically etched insulative sidewall spacers over opposing sidewalls of individual of said transistor gate lines within the memory array area. Other aspects and implementations are contemplated.
    • 本发明包括形成存储器电路的方法。 在一个实现中,提供了具有存储器阵列电路区域和外围电路区域的衬底。 存储器阵列电路区域包括具有第一最小线间距的晶体管栅极线。 外围电路区域包括具有大于第一最小线间距的第二最小线间距的晶体管栅极线。 在存储器阵列区域内的所述晶体管栅极线的单独的相对侧壁上形成各向异性蚀刻的绝缘侧壁间隔物之前,在外围电路区域内的所述晶体管栅极线的单独的相对侧壁上形成各向异性蚀刻的绝缘侧壁间隔物。 考虑了其他方面和实现。
    • 2. 发明授权
    • Methods of forming memory circuitry
    • 形成存储器电路的方法
    • US07462534B2
    • 2008-12-09
    • US11196051
    • 2005-08-02
    • Kunal R. ParekhSuraj MathewSteve Cole
    • Kunal R. ParekhSuraj MathewSteve Cole
    • H01L21/8244
    • H01L29/6656H01L27/10882H01L27/10891H01L27/10894
    • The invention includes methods of forming memory circuitry. In one implementation, a substrate is provided which has a memory array circuitry area and a peripheral circuitry area. The memory array circuitry area comprises transistor gate lines having a first minimum line spacing. The peripheral circuitry area comprises transistor gate lines having a second minimum line spacing which is greater than the first minimum line spacing. Anisotropically etched insulative sidewall spacers are formed over opposing sidewalls of individual of said transistor gate lines within the peripheral circuitry area prior to forming anisotropically etched insulative sidewall spacers over opposing sidewalls of individual of said transistor gate lines within the memory array area. Other aspects and implementations are contemplated.
    • 本发明包括形成存储器电路的方法。 在一个实现中,提供了具有存储器阵列电路区域和外围电路区域的衬底。 存储器阵列电路区域包括具有第一最小线间距的晶体管栅极线。 外围电路区域包括具有大于第一最小线间距的第二最小线间距的晶体管栅极线。 在存储器阵列区域内的所述晶体管栅极线的单独的相对侧壁上形成各向异性蚀刻的绝缘侧壁间隔物之前,在外围电路区域内的所述晶体管栅极线的单独的相对侧壁上形成各向异性蚀刻的绝缘侧壁间隔物。 考虑了其他方面和实现。
    • 3. 发明申请
    • Inductive Charging Holster for Power Tool
    • 电动工具感应充电套
    • US20160099606A1
    • 2016-04-07
    • US14873766
    • 2015-10-02
    • Yizhuo ZhangMarco LaubachSteve Cole
    • Yizhuo ZhangMarco LaubachSteve Cole
    • H02J7/02H02J7/04H02J7/00
    • H02J7/025H02J7/0044H02J7/0045H02J7/04H02J50/10H02J50/90
    • A wireless charging system for a power tool includes a charging module, docking frame, and tool holder. The charging module has a charging surface and an inductive charging device for charging a power tool resting on the charging surface, and is mounted in the docking frame, which is mounted in a mounting interface of the tool holder such that the charging surface is at an angle. The tool holder further includes a holding portion extending from a downward portion of the mounting interface such that the holding portion transversely supports the power tool. A soft insert structure received in the holding portion forms an interference fit with the power tool and applies a load to the power tool toward the charging surface that urges the power tool to an optimal location for charging, relative to the inductive charging device.
    • 用于电动工具的无线充电系统包括充电模块,对接框架和工具架。 充电模块具有充电表面和感应充电装置,用于对放置在充电表面上的电动工具充电,并且安装在对接框架中,该对接框架安装在工具架的安装界面中,使得充电表面处于 角度。 工具架还包括从安装界面的向下部分延伸的保持部分,使得保持部分横向地支撑电动工具。 容纳在保持部分中的软插入结构形成与电动工具的过盈配合,并且相对于感应充电装置向电动工具朝向充电表面施加负载以将电动工具推动到用于充电的最佳位置。