专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090321641A1 BIPOLAR JUNCTION TRANSISTOR-BASED UNCOOLED INFRARED SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：基于双极性晶体管的不连续红外传感器及其制造方法
公开(公告)号：US20090321641A1
公开(公告)日：2009-12-31
申请号：US12111830
申请日：2008-04-29
申请人： Kun Sik PARK , Yong Sun YOON , Bo Woo KIM , Jin Yeong KANG , Jong Moon PARK , Seong Wook YOO
发明人： Kun Sik PARK , Yong Sun YOON , Bo Woo KIM , Jin Yeong KANG , Jong Moon PARK , Seong Wook YOO
IPC分类号： H01L31/024 , H01L31/18 , H01L31/09
CPC分类号： G01J5/20 , H01L21/762 , H01L27/1203
摘要： A BJT (bipolar junction transistor)-based uncooled IR sensor and a manufacturing method thereof are provided. The BJT-based uncooled IR sensor includes: a substrate; at least one BJT which is formed to be floated apart from the substrate; and a heat absorption layer which is formed on an upper surface of the at least one BJT, wherein the BJT changes an output value according heat absorbed through the heat absorption layer. Accordingly, it is possible to provide a BJT-based uncooled IR sensor capable of being implemented through a CMOS compatible process and obtaining more excellent temperature change detection characteristics.
摘要翻译：提供了一种基于BJT（双极结型晶体管）的非制冷IR传感器及其制造方法。基于BJT的非制冷红外传感器包括：基板; 至少一个BJT，其形成为与衬底分开浮动; 以及形成在所述至少一个BJT的上表面上的吸热层，其中所述BJT根据通过所述吸热层吸收的热量来改变输出值。因此，可以提供能够通过CMOS兼容工艺实现的BJT系非冷却IR传感器，并获得更优异的温度变化检测特性。

2. 发明申请

US20130056843A1 PHOTOMULTIPLIER AND MANUFACTURING METHOD THEREOF 有权
标题翻译：照相机及其制造方法
公开(公告)号：US20130056843A1
公开(公告)日：2013-03-07
申请号：US13601948
申请日：2012-08-31
申请人： Joon Sung LEE , Yong Sun YOON
发明人： Joon Sung LEE , Yong Sun YOON
IPC分类号： H01L31/0216
CPC分类号： H01L31/107 , H01L27/1446 , H01L27/14643 , H01L27/14689
摘要： Provided are a photomultiplier and a manufacturing method thereof. The manufacturing method thereof may include forming a mask layer on an active region of a substrate doped with a first conductive type, ion implanting a second conductive type impurity opposite to the first conductive type into the substrate to form a first doped region in the active region under the mask layer and an non-active region exposed from the mask layer, forming a device isolation layer on the non-active region, removing the mask layer, and ion implanting the second conductive type impurity having a concentration higher than that of the first doped region into an upper portion of the first doped region in the active region to form a second doped region shallower than the first doped region.
摘要翻译：提供一种光电倍增管及其制造方法。其制造方法可以包括在掺杂有第一导电类型的衬底的有源区上形成掩模层，将与第一导电类型相反的第二导电类型杂质注入到衬底中以在有源区中形成第一掺杂区在掩模层下面和从掩模层露出的非有源区，在非有源区上形成器件隔离层，去除掩模层，以及离子注入浓度高于第一导电型杂质的第二导电型杂质掺杂区域进入有源区域中的第一掺杂区域的上部，以形成比第一掺杂区域浅的第二掺杂区域。

3. 发明申请

US20120139071A1 SILICON PHOTOMULTIPLIER AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：硅光电子照相机及其制造方法
公开(公告)号：US20120139071A1
公开(公告)日：2012-06-07
申请号：US13289256
申请日：2011-11-04
申请人： Joon Sung LEE , Yong Sun YOON
发明人： Joon Sung LEE , Yong Sun YOON
IPC分类号： H01L31/0224
CPC分类号： H01L31/103 , H01L27/1461 , H01L27/14683 , H01L31/107
摘要： Provided are a silicon photomultiplier and method for fabricating silicon photomultiplier. The silicon photomultiplier includes a first conductive type semiconductor layer; a first conductive type buried layer disposed in a lower portion of the first conductive type semiconductor layer, and having a higher impurity concentration than the first conductive type semiconductor layer; quench resistors spaced from each other and disposed on the first conductive type semiconductor layer; a transparent insulator formed on the first conductive type semiconductor layer, and exposing the quench resistors; second conductive type doped layers disposed under the quench resistors to contact the first conductive type semiconductor layer; and a transparent electrode commonly connected to the quench resistors electrically.
摘要翻译：提供了硅光电倍增管和制造硅光电倍增管的方法。硅光电倍增管包括第一导电型半导体层; 第一导电型掩埋层，设置在第一导电类型半导体层的下部，并且具有比第一导电类型半导体层更高的杂质浓度; 淬火电阻彼此间隔开并设置在第一导电类型半导体层上; 形成在所述第一导电类型半导体层上的透明绝缘体，并暴露所述骤冷电阻器; 设置在所述骤冷电阻器下方的第二导电型掺杂层以接触所述第一导电类型半导体层; 以及通常连接到骤冷电阻器的透明电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式