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1. 发明申请

US20070284593A1 Nitride-based semiconductor light emitting diode 审中-公开
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20070284593A1
公开(公告)日：2007-12-13
申请号：US11798677
申请日：2007-05-16
申请人： Kun Ko , Bang Oh , Seok Hwang , Je Kim , Hyung Park , Dong Kim
发明人： Kun Ko , Bang Oh , Seok Hwang , Je Kim , Hyung Park , Dong Kim
IPC分类号： H01L33/00 , H01L31/12 , H01L27/15 , H01L29/26
CPC分类号： H01L33/38 , H01L33/20
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer, the p-electrode having a p-type branch electrode; a p-type ESD pad formed at the end of the p-type branch electrode, the p-type ESD pad having a larger width than the end of the p-type branch electrode; an n-electrode formed on the n-type nitride semiconductor layer, on which the active layer is not formed, the n-electrode having an n-type branch electrode; and an n-type ESD pad formed at the end of the n-type branch electrode, the n-type ESD pad having a larger width than the end of the n-type branch electrode.
摘要翻译：氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p电极，p电极具有p型分支电极; 形成在p型分支电极的端部的p型ESD焊盘，p型ESD焊盘的宽度大于p型分支电极的端部; 形成在其上没有形成有源层的n型氮化物半导体层上的n电极，具有n型分支电极的n电极; 以及形成在n型分支电极的端部的n型ESD焊盘，该n型ESD焊盘的宽度大于n型分支电极的端部。

2. 发明申请

US20060261358A1 Flip chip light emitting diode and method of manufacturing the same 审中-公开
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US20060261358A1
公开(公告)日：2006-11-23
申请号：US11414362
申请日：2006-05-01
申请人： Seok Hwang , Je Kim , Young Park , Min Kim , Hyo-Kyoung Cho , Kun Ko , Bok Min
发明人： Seok Hwang , Je Kim , Young Park , Min Kim , Hyo-Kyoung Cho , Kun Ko , Bok Min
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/382 , H01L33/62 , H01L2224/05001 , H01L2224/05022 , H01L2224/05568 , H01L2224/0557 , H01L2224/05571 , H01L2224/16 , H01L2933/0016
摘要： The present invention relates to a flip chip light emitting diode in which an n-type electrode is formed on an insulating layer so that a large light emitting area can be secured to thereby enhance a current-spreading effect and in which the n-type electrode serves as a light reflecting layer so that light is prevented from being transmitted into the rear surface to thereby enhance light emission efficiency. The flip chip light emitting diode includes an optically-transparent substrate; a light emitting substrate that is formed by sequentially laminating an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer on the substrate and that includes mesas which are formed by etching the active layer and the p-type nitride semiconductor layer into a predetermined width so that a plurality of regions of the n-type nitride semiconductor layer are exposed; a plurality of p-type electrodes that are formed on the p-type nitride semiconductor layer of the light emitting structure; an insulating layer that is formed on the surface of the light emitting structure from a portion of the plurality of p-type electrodes to a portion of the n-type nitride semiconductor layer of the mesa; and an n-type electrode that is formed across the insulating layer and the mesa and comes in contact with the exposed n-type nitride semiconductor layer of the mesa.
摘要翻译：本发明涉及一种倒装芯片发光二极管，其中在绝缘层上形成n型电极，从而可以确保大的发光区域，从而提高电流扩散效应，其中n型电极作为光反射层，防止光被透射到后表面，从而提高发光效率。倒装芯片发光二极管包括光学透明基板; 通过在衬底上顺序地层叠n型氮化物半导体层，有源层，p型氮化物半导体层，并且包括通过蚀刻有源层和p型氮化物形成的台面而形成的发光衬底半导体层形成预定宽度，以使n型氮化物半导体层的多个区域露出; 多个p型电极，形成在发光结构的p型氮化物半导体层上; 在所述发光结构的表面上形成从所述多个p型电极的一部分到所述台面的n型氮化物半导体层的一部分的绝缘层，以及形成在绝缘层和台面两侧并与台面的暴露的n型氮化物半导体层接触的n型电极。

3. 发明申请

US20070012939A1 Flip chip light emitting diode and method of manufacturing the same 审中-公开
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US20070012939A1
公开(公告)日：2007-01-18
申请号：US11412984
申请日：2006-04-28
申请人： Seok Hwang , Je Kim , Young Park , Kun Ko , Jee Kim , Jung Park , Bok Min
发明人： Seok Hwang , Je Kim , Young Park , Kun Ko , Jee Kim , Jung Park , Bok Min
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/08 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： The present invention relates to a flip chip light emitting diode, in which the flow of current concentrated on a portion adjacent to an n-type electrode can be induced into the center of a light emitting section and a current-spreading effect is accordingly enhanced, thereby increasing light emission efficiency of a light emitting diode chip, and a method of manufacturing the same. The method of manufacturing a flip chip light emitting diode includes sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on an optically-transparent substrate; etching predetermined regions of the active layer and p-type nitride semiconductor layer and exposing a plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of mesas; etching predetermined regions of the active layer and p-type nitride semiconductor layer positioned between the formed mesas and exposing the plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of grooves; forming an insulating layer on the surface of the groove; forming a p-type electrode across the insulating layer formed on the upper portion of the p-type nitride semiconductor layer and the surface of the groove; and forming an n-type electrode on the formed mesa.
摘要翻译：倒装芯片发光二极管技术领域本发明涉及一种倒装芯片发光二极管，其中集中在与n型电极相邻的部分上的电流可以被感应到发光部分的中心，从而相应地提高了电流扩展效果，从而提高发光二极管芯片的发光效率及其制造方法。制造倒装芯片发光二极管的方法包括在光学透明基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层; 蚀刻有源层和p型氮化物半导体层的预定区域，并露出n型氮化物半导体层的多个区域以形成多个台面; 蚀刻位于形成的台面之间的有源层和p型氮化物半导体层的预定区域，并暴露出n型氮化物半导体层的多个区域以形成多个沟槽; 在所述槽的表面上形成绝缘层; 在形成在p型氮化物半导体层的上部和沟槽的表面上的绝缘层上形成p型电极; 并在形成的台面上形成n型电极。

4. 发明申请

US20070007584A1 Nitride semiconductor light emitting diode and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US20070007584A1
公开(公告)日：2007-01-11
申请号：US11480901
申请日：2006-07-06
申请人： Seok Hwang , Je Kim , Kun Ko , Bok Min
发明人： Seok Hwang , Je Kim , Kun Ko , Bok Min
IPC分类号： H01L29/792
CPC分类号： H01L33/42 , H01L27/156 , H01L33/08 , H01L33/38
摘要： The present invention relates to a GaN-based semiconductor light emitting diode and a method of manufacturing the same. The GaN-based semiconductor light emitting diode includes: a substrate; a n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent conductive layer formed on the p-type nitride semiconductor layer; an insulating layer formed on an upper center portion of the transparent conductive layer, the insulating layer having a contact hole defining a p-type contact region; a p-electrode formed on the insulating layer and electrically connected to the transparent conductive layer through the contact hole; and an n-electrode formed on the n-type nitride semiconductor layer where no active layer is formed.
摘要翻译：本发明涉及GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括：基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定部分上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明导电层; 绝缘层，形成在所述透明导电层的上中心部分上，所述绝缘层具有限定p型接触区域的接触孔; p电极，形成在所述绝缘层上，并通过所述接触孔与所述透明导电层电连接; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。

5. 发明申请

US20070085097A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070085097A1
公开(公告)日：2007-04-19
申请号：US11581335
申请日：2006-10-17
申请人： Sun Kim , Je Kim , Sang Kang , Keun Song , Bang Oh
发明人： Sun Kim , Je Kim , Sang Kang , Keun Song , Bang Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译：本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。至少一个量子势垒层具有带隙调制多层结构。

6. 发明申请

US20050269583A1 Gallium nitride-based semiconductor light-emitting device and method of fabricatiing the same 审中-公开
标题翻译：氮化镓系半导体发光元件及其制造方法
公开(公告)号：US20050269583A1
公开(公告)日：2005-12-08
申请号：US10899035
申请日：2004-07-27
申请人： Dong Kim , Je Kim , Sun Kim , Kyu Lee , Jeong Oh
发明人： Dong Kim , Je Kim , Sun Kim , Kyu Lee , Jeong Oh
IPC分类号： H01L33/02 , H01L33/16 , H01L33/22 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16 , H01L33/22
摘要： This invention pertains to a gallium nitride-based semiconductor light-emitting device, in which nano-sized, fine protrusions are formed on an upper surface of a p-type clad layer without a deterioration of crystallinity and electric conductivity to improve light extraction efficiency, and a method of fabricating the same. After a first conductive gallium nitride-based semiconductor layer and an active layer are grown on a substrate under typical growth conditions, a second conductive gallium nitride-based semiconductor layer is grown on a polarity conversion layer containing a MgN-based single crystal and formed on the active layer, so that a polarity of the second conductive gallium nitride-based semiconductor layer is converted into an N polarity, thereby roughing a surface thereof.
摘要翻译：本发明涉及一种氮化镓基半导体发光器件，其中在p型覆层的上表面上形成纳米尺寸的微细突起，而不会导致结晶性和导电性的劣化，从而提高光提取效率，及其制造方法。在典型的生长条件下在第一导电氮化镓基半导体层和有源层生长在衬底上之后，在包含MgN基单晶的极性转换层上生长第二导电氮化镓基半导体层，并形成在有源层，使得第二导电氮化镓系半导体层的极性转换为N极性，从而粗糙化其表面。

7. 发明申请

US20050224824A1 Gallium nitride-based semiconductor light-emitting device 有权
标题翻译：氮化镓系半导体发光元件
公开(公告)号：US20050224824A1
公开(公告)日：2005-10-13
申请号：US10911562
申请日：2004-08-05
申请人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Soo Lee
发明人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Soo Lee
IPC分类号： H01L21/205 , H01L29/22 , H01L33/12 , H01L33/32
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： Provided is a gallium nitride-based semiconductor light-emitting device comprising a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single crystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on the first conductive gallium nitride-based semiconductor layer; and a second conductive gallium nitride-based semiconductor layer formed on the active layer.
摘要翻译：提供一种氮化镓系半导体发光元件，其包含具有氮化上表面的蓝宝石衬底; 在蓝宝石衬底上形成的由MgN基单晶构成的极性转换层; 形成在极性转换层上的第一导电氮化镓基半导体层; 形成在第一导电氮化镓基半导体层上的有源层; 以及形成在有源层上的第二导电氮化镓基半导体层。

8. 发明申请

US20060086932A1 Nitride based semiconductor device 有权
标题翻译：氮化物基半导体器件
公开(公告)号：US20060086932A1
公开(公告)日：2006-04-27
申请号：US11098278
申请日：2005-04-04
申请人： Sun Kim , Dong Cho , Je Kim , Kyu Lee , Jeong Oh , Dong Kim
发明人： Sun Kim , Dong Cho , Je Kim , Kyu Lee , Jeong Oh , Dong Kim
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/0213 , H01S5/3216 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a nitride based semiconductor device comprising an active layer having a quantum well layer and a quantum barrier layer, wherein the device includes an electron emitting layer formed of at least two repeats of a first nitride semiconductor layer and a second nitride semiconductor layer having different compositions between a n-type nitride semiconductor layer and the active layer, the first nitride semiconductor layer has an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, and the second nitride semiconductor layer has an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and has a thickness capable of tunneling electrons.
摘要翻译：本发明提供了一种氮化物基半导体器件，其包括具有量子阱层和量子势垒层的有源层，其中该器件包括由至少两个重复的第一氮化物半导体层和第二氮化物半导体层形成的电子发射层在n型氮化物半导体层和有源层之间具有不同的组成，第一氮化物半导体层的能带隙大于量子阱层的能带隙，小于量子势垒层的能带隙，并且更接近于活性层层，并且第二氮化物半导体层具有至少比相邻的第一氮化物半导体层的能带隙高的能带隙，并且具有能够隧穿电子的厚度。

9. 发明申请

US20060006407A1 Nitride semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20060006407A1
公开(公告)日：2006-01-12
申请号：US11052103
申请日：2005-02-08
申请人： Je Kim , Sun Kim , Dong Kim
发明人： Je Kim , Sun Kim , Dong Kim
IPC分类号： H01L29/24
CPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , Y10S438/962 , Y10S438/964
摘要： The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
摘要翻译：本发明提供一种氮化物半导体器件。氮化物半导体器件包括形成在氮化物晶体生长衬底上的n型氮化物半导体层。在n型氮化物半导体层上形成有源层。在有源层上形成第一p型氮化物半导体层。在第一p型氮化物半导体层上形成微结构化的电流扩散图案。电流扩散图案由绝缘材料制成。在其上形成有电流扩散图案的第一p型氮化物半导体层上形成第二p型氮化物半导体层。

10. 发明申请

US20080001138A1 NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20080001138A1
公开(公告)日：2008-01-03
申请号：US11380415
申请日：2006-04-26
申请人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
发明人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0

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