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    • 1. 发明授权
    • Method of fabricating an array substrate for liquid crystal display device
    • 制造液晶显示装置用阵列基板的方法
    • US07907226B2
    • 2011-03-15
    • US12591738
    • 2009-11-30
    • Myoung-Su YangKum-Mi Oh
    • Myoung-Su YangKum-Mi Oh
    • G02F1/136H01L21/00H01L29/00
    • G02F1/1368
    • A liquid crystal display device having a switching element in a pixel portion and a CMOS element in a driving portion includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a polycrystalline silicon layer on the gate insulating layer, the polycrystalline silicon layer having an active region in a central portion corresponding to the gate electrode and an ohmic contact region at side portions of the active region; an interlayer insulating layer having a set of contact holes for contacting the polycrystalline silicon layer at the side portions; and source and drain electrodes spaced apart from each other on the interlayer insulating layer, the source and drain electrodes contacting the polycrystalline silicon layer through the set of contact holes.
    • 具有像素部分中的开关元件和驱动部分中的CMOS元件的液晶显示装置包括:基板; 基板上的栅电极; 栅电极上的栅极绝缘层; 在所述栅极绝缘层上的多晶硅层,所述多晶硅层在与所述栅电极对应的中心部分具有有源区,在所述有源区的侧部具有欧姆接触区; 层间绝缘层,其具有用于在侧部接触多晶硅层的一组接触孔; 以及在层间绝缘层上彼此间隔开的源极和漏极,源极和漏极通过该组接触孔与多晶硅层接触。
    • 3. 发明授权
    • Liquid crystal display device including polycrystalline silicon thin film transistor and method of fabricating the same
    • 包括多晶硅薄膜晶体管的液晶显示装置及其制造方法
    • US07646442B2
    • 2010-01-12
    • US10980265
    • 2004-11-04
    • Myoung-Su YangKum-Mi Oh
    • Myoung-Su YangKum-Mi Oh
    • G02F1/136H01L21/00H01L31/00
    • G02F1/1368
    • A liquid crystal display device having a switching element in a pixel portion and a CMOS element in a driving portion includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a polycrystalline silicon layer on the gate insulating layer, the polycrystalline silicon layer having an active region in a central portion corresponding to the gate electrode and an ohmic contact region at side portions of the active region; an interlayer insulating layer having a set of contact holes for contacting the polycrystalline silicon layer at the side portions; and source and drain electrodes spaced apart from each other on the interlayer insulating layer, the source and drain electrodes contacting the polycrystalline silicon layer through the set of contact holes.
    • 具有像素部分中的开关元件和驱动部分中的CMOS元件的液晶显示装置包括:基板; 基板上的栅电极; 栅电极上的栅极绝缘层; 在所述栅极绝缘层上的多晶硅层,所述多晶硅层在与所述栅电极对应的中心部分具有有源区,在所述有源区的侧部具有欧姆接触区; 层间绝缘层,其具有用于在侧部接触多晶硅层的一组接触孔; 以及在层间绝缘层上彼此间隔开的源极和漏极,源极和漏极通过该组接触孔与多晶硅层接触。