专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06333262B1 Method for forming silicide 失效
标题翻译：硅化物的形成方法
公开(公告)号：US06333262B1
公开(公告)日：2001-12-25
申请号：US09636558
申请日：2000-08-11
申请人： Kuen-Syh Tseng , Ruoh-Haw Chang , Shu-Jen Chen
发明人： Kuen-Syh Tseng , Ruoh-Haw Chang , Shu-Jen Chen
IPC分类号： H01L2044
CPC分类号： H01L21/28052 , H01L21/28518 , H01L29/665
摘要： A method for forming silicide on a semiconductor wafer. The semiconductor wafer includes a doped silicon layer on a predetermined area of the semiconductor wafer, a metal layer positioned on the doped silicon layer, and a barrier layer covering the metal layer. A first rapid thermal processing (RTP) step is performed to make portions of the metal layer react with silicon inside the doped silicon layer so as to form a transitional silicide. The barrier layer and the portions of the metal layer that have not reacted with silicon are then removed. A dielectric layer is formed on the transitional silicide. Finally, a second rapid thermal processing (RTP) step is performed to make the transitional silicide react with portions of the doped silicon layer so as to form the silicide.
摘要翻译：一种在半导体晶片上形成硅化物的方法。半导体晶片包括在半导体晶片的预定区域上的掺杂硅层，位于掺杂硅层上的金属层和覆盖金属层的阻挡层。执行第一快速热处理（RTP）步骤以使金属层的部分与掺杂硅层内的硅反应，以形成过渡硅化物。然后除去未与硅反应的阻挡层和金属层的部分。在过渡硅化物上形成介电层。最后，进行第二快速热处理（RTP）步骤以使过渡硅化物与掺杂硅层的部分反应以形成硅化物。

2. 发明授权

US06462390B1 Multi-film capping layer for a salicide process 有权
标题翻译：用于自杀过程的多层覆盖层
公开(公告)号：US06462390B1
公开(公告)日：2002-10-08
申请号：US09672234
申请日：2000-09-27
申请人： Ming-Shing Chen , Shu-Jen Chen , Jy-Hwang Lin , Kuen-Syh Tseng
发明人： Ming-Shing Chen , Shu-Jen Chen , Jy-Hwang Lin , Kuen-Syh Tseng
IPC分类号： H01L21336
CPC分类号： H01L29/665 , H01L21/28044 , H01L29/4933
摘要： A multi-film capping layer having a cobalt layer, a barrier layer, and a stuffing layer is disclosed, wherein the barrier layer isolates the cobalt layer from the stuffing layer. The multi-film capping layer is formed on a gate transistor and applicable to a self-aligned silicide (salicide) process, so that a sheet resistance of the salicide layer on conductive regions of the gate transistor is significantly reduced. The stuffing layer further prevents entry of oxygen or moisture to the salicide layer, thus no cobalt oxide is formed when RTP is performed. Without formation of the cobalt oxide, the salicide process is free from the bridging issue and the filament issue.
摘要翻译：公开了具有钴层，阻挡层和填充层的多层覆盖层，其中阻挡层将钴层与填料层隔离。多层覆盖层形成在栅极晶体管上并且可应用于自对准硅化物（自对准硅化物）工艺，使得栅极晶体管的导电区域上的自对准硅化物层的薄层电阻显着降低。填充层进一步防止氧化物或水分进入自对准硅化物层，因此在进行RTP时不会形成氧化钴。不形成氧化钴，自对准硅化物工艺没有桥接问题和灯丝问题。

3. 发明授权

US06303043B1 Method of fabricating preserve layer 有权
标题翻译：制作保鲜层的方法
公开(公告)号：US06303043B1
公开(公告)日：2001-10-16
申请号：US09348407
申请日：1999-07-07
申请人： Wei-Shiau Chen , Ruoh-Haw Chang , Shu-Jen Chen
发明人： Wei-Shiau Chen , Ruoh-Haw Chang , Shu-Jen Chen
IPC分类号： H01L2100
CPC分类号： H01L21/76801 , G02F1/133553 , G02F1/136277 , H01L21/76832 , H01L21/76834 , Y10S438/954
摘要： A method of fabricating a preserve layer. A top metallic layer is formed over the substrate. Portions of the metallic layer and the substrate are removed to form a trench. A conformal pad oxide layer is formed over the substrate. A conformal first nitride layer is formed on the pad oxide layer. A spin-on glass layer is formed on the first nitride layer to fill the trench. An etching back step is performed to remove a portion of the spin-on glass layer. The remaining spin-on glass layer fills the trench to the surface of the first nitride layer above the top metallic layer. An oxide layer is formed over the substrate. A second nitride layer is formed on the oxide layer. A preserve layer comprising the pad oxide layer, the first nitride layer, the oxide layer, and the second nitride layer is formed.
摘要翻译：一种保护层的制造方法。顶层金属层形成在衬底上。去除部分金属层和基底以形成沟槽。在衬底上形成保形衬垫氧化物层。在焊盘氧化物层上形成共形的第一氮化物层。在第一氮化物层上形成旋涂玻璃层以填充沟槽。执行蚀刻返回步骤以去除旋涂玻璃层的一部分。剩余的旋涂玻璃层将沟槽填充到顶部金属层上方的第一氮化物层的表面。在衬底上形成氧化物层。在氧化物层上形成第二氮化物层。形成包括衬垫氧化物层，第一氮化物层，氧化物层和第二氮化物层的保护层。

4. 发明授权

US6150264A Method of manufacturing self-aligned silicide 失效
标题翻译：制造自对准硅化物的方法
公开(公告)号：US6150264A
公开(公告)日：2000-11-21
申请号：US075420
申请日：1998-05-08
申请人： Shu-Jen Chen , Ruoh-Haw Chang , Chih-Ching Hsu
发明人： Shu-Jen Chen , Ruoh-Haw Chang , Chih-Ching Hsu
IPC分类号： H01L21/285 , H01L21/44
CPC分类号： H01L21/28518
摘要： The invention relates to a method for manufacturing of a titanium self-aligned silicide (Salicide). This process includes of forming a metal layer over the surfaces of the semiconductor substrate and the gate electrode. Then, a rapid thermal process is performed with three stages to form the salicide, for example, titanium silicide, at the interface between the titanium and silicon, namely on the surfaces of the gate electrode and source/drain region. The rapid thermal process with three stages includes using the first stage with the first temperature to form the early titanium silicide having the C49 phase. The temperature is raised to a second temperature and the RTA process is performed with nitrogen gases to transform the high resistance phase C49 of the titanium nitride into a low resistance phase C54 in the second stage. Then, the temperature is rapidly raised to a third temperature to transform the C49 phase into the C54 phase completely and to prevent the agglomeration phenomenon.
摘要翻译：本发明涉及钛自对准硅化物（硅化物）的制造方法。该方法包括在半导体衬底和栅电极的表面上形成金属层。然后，以三个阶段进行快速热处理，以在钛和硅之间的界面，即在栅电极和源极/漏极区的表面上形成硅化物，例如硅化钛。具有三个阶段的快速热处理包括使用具有第一温度的第一阶段形成具有C49相的早期硅化钛。将温度升至第二温度，并用氮气进行RTA处理，以将氮化钛的高电阻相C49转化为第二阶段的低电阻相C54。然后，将温度迅速升至第三温度，以使C49相完全转化为C54相，并防止凝聚现象。

5. 发明授权

US08211909B2 Treatment of antibiotic-resistant bacteria infection 有权
标题翻译：治疗抗生素耐药细菌感染
公开(公告)号：US08211909B2
公开(公告)日：2012-07-03
申请号：US12206060
申请日：2008-09-08
申请人： Ming-Chu Hsu , Chi-Hsin Richard King , Shu-Jen Chen , Luke Lin
发明人： Ming-Chu Hsu , Chi-Hsin Richard King , Shu-Jen Chen , Luke Lin
IPC分类号： A61K31/47
CPC分类号： A61K31/4709
摘要： This invention relates to a method of treating infection by methicillin-nonsusceptibale bacteria, vancomycin-nonsusceptibale bacteria, penicillin-nonsusceptibale bacteria, clarithromycin-nonsusceptibale bacteria, or metronidazole-nonsusceptibale bacteria by administering to a subject in need thereof an effective amount of a compound of the following formula:
摘要翻译：本发明涉及一种通过向有需要的受试者施用有效量的化合物的方法来治疗甲氧西林非感染性细菌，万古霉素 - 非感染性细菌，青霉素 - 非吸收性细菌，克拉霉素 - 非吸收性细菌或甲硝唑 - 非吸收性细菌的感染，以下公式：

6. 发明授权

US07396838B2 Use of 1H-indol-3-yl-2-oxoacetamide compounds 有权
标题翻译：使用1H-吲哚-3-基-2-氧代乙酰胺化合物
公开(公告)号：US07396838B2
公开(公告)日：2008-07-08
申请号：US11145628
申请日：2005-06-06
申请人： Chiung-Tong Chen , Shu-Jen Chen , Ming-Chu Hsu , Der-Ren Hwang , Wen-Tai Li , Chu-Chung Lin
发明人： Chiung-Tong Chen , Shu-Jen Chen , Ming-Chu Hsu , Der-Ren Hwang , Wen-Tai Li , Chu-Chung Lin
IPC分类号： A01N43/42 , A01N43/82 , A01N43/78 , A01N43/80 , A01N43/64 , A01N43/38 , A61K31/47 , A61K31/41 , A61K31/425 , A61K31/42 , A61K31/40 , C07D217/00 , C07D215/38 , C07D417/00 , C07D263/00 , C07D413/00 , C07D261/04 , C07D261/14 , C07D405/00 , C07D409/00 , C07D411/00
CPC分类号： C07D401/12 , C07D403/12 , C07D409/14 , C07D417/12 , C07D417/14
摘要： A method of treating cancer including administering to a subject in need thereof an effective amount of a compound of the formula 1: wherein R1, R2, R3, R4, and n are as defined herein.
摘要翻译：一种治疗癌症的方法，包括向有需要的受试者施用有效量的式1化合物：其中R 1，R 2，R 3， R 4，R 4和n如本文所定义。

7. 发明授权

US07378524B2 Aminoquinoline compounds 失效
标题翻译：氨基喹啉化合物
公开(公告)号：US07378524B2
公开(公告)日：2008-05-27
申请号：US10953937
申请日：2004-09-29
申请人： Chu-Chung Lin , Jen-Fuh Liu , Chih-Wei Chang , Shu-Jen Chen , Yibin Xiang , Pei-Chin Cheng , Jiing-Jyh Jan
发明人： Chu-Chung Lin , Jen-Fuh Liu , Chih-Wei Chang , Shu-Jen Chen , Yibin Xiang , Pei-Chin Cheng , Jiing-Jyh Jan
IPC分类号： C07D215/38
CPC分类号： C07D401/14 , A61K31/4745 , A61K31/519 , C07D215/42 , C07D215/44 , C07D215/46 , C07D219/12 , C07D221/16 , C07D401/12 , C07D409/14 , C07D413/14 , C07D417/12 , C07D417/14 , C07D471/04
摘要： This invention relates to treating inflammatory and immune diseases with certain aminoquinoline compounds that bind to CXCR3 receptors. The aminoquinoline compounds are covered by the formula (I) shown below. Each variable is defined in the specification.
摘要翻译：本发明涉及用与CXCR3受体结合的某些氨基喹啉化合物治疗炎症和免疫疾病。氨基喹啉化合物被下面所示的式（I）覆盖。每个变量在规范中定义。

8. 发明申请

US20080058382A1 POLYAMINE COMPOUNDS 失效
标题翻译：聚氨酯化合物
公开(公告)号：US20080058382A1
公开(公告)日：2008-03-06
申请号：US11834204
申请日：2007-08-06
申请人： Chi-Feng Yen , Chi-Hsin King , Hua-Chien Chen , Gholam Hakimelahi , Shu-Jen Chen , Ying-Huey Huang , Chien-Huang Wu
发明人： Chi-Feng Yen , Chi-Hsin King , Hua-Chien Chen , Gholam Hakimelahi , Shu-Jen Chen , Ying-Huey Huang , Chien-Huang Wu
IPC分类号： A61K31/44 , A61P19/02 , A61P19/10 , A61P25/28 , C07D401/00
CPC分类号： C07D207/335 , A61K31/135 , A61K31/15 , A61K31/165 , A61K31/195 , A61K31/44 , A61K31/445 , C07C211/27 , C07C211/29 , C07C211/30 , C07D209/08 , C07D213/38 , C07D213/42 , C07D213/74 , C07D235/14 , C07D257/02 , C07D333/18 , C07D401/14 , C07D409/14 , C07D471/04
摘要： This invention relates to methods for treating retinopathy and repairing tissue damage. The methods include administering to a subject in need thereof an effective amount of one or more compounds of the following formula. Each variable in this formula is defined in the specification.
摘要翻译：本发明涉及治疗视网膜病变和修复组织损伤的方法。所述方法包括向有需要的受试者施用有效量的一种或多种下列化合物。该公式中的每个变量在规范中定义。

9. 发明授权

US07662834B2 Methods of 1H-indol-3-yl-2-oxoacetamide compounds 有权
标题翻译： 1H-吲哚-3-基-2-氧代乙酰胺化合物的方法
公开(公告)号：US07662834B2
公开(公告)日：2010-02-16
申请号：US12132254
申请日：2008-06-03
申请人： Chiung-Tong Chen , Shu-Jen Chen , Ming-Chu Hsu , Der-Ren Hwang , Wen-Tai Li , Chu-Chung Lin
发明人： Chiung-Tong Chen , Shu-Jen Chen , Ming-Chu Hsu , Der-Ren Hwang , Wen-Tai Li , Chu-Chung Lin
IPC分类号： A01N43/42 , A61K31/47 , A61K31/44 , A61K31/425 , A01N43/80
CPC分类号： C07D401/12 , C07D403/12 , C07D409/14 , C07D417/12 , C07D417/14
摘要： This invention relates to treating cancer or an angiogenesis-related disease using a compound of formula 1: wherein R1, R2, R3, R4, and n are defined herein.
摘要翻译：本发明涉及使用式1化合物治疗癌症或血管发生相关疾病：其中R1，R2，R3，R4和n如本文所定义。

10. 发明申请

US20070049009A1 METHOD OF MANUFACTURING CONDUCTIVE LAYER 审中-公开
标题翻译：制造导电层的方法
公开(公告)号：US20070049009A1
公开(公告)日：2007-03-01
申请号：US11162119
申请日：2005-08-30
申请人： Chia-Lin Hsu , Liang-Yuan Fang , Shu-Jen Chen
发明人： Chia-Lin Hsu , Liang-Yuan Fang , Shu-Jen Chen
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76849 , H01L21/02068 , H01L21/02074 , H01L21/76861
摘要： A method of manufacturing a conductive layer is described. A substrate having a dielectric layer thereon is provided. The dielectric layer has a patterned structure and the patterned structure exposes a portion of the conductive layer. The surface of the substrate is cleaned in a first cleaning step and a cap layer is formed over the exposed portion of the conductive layer. Thereafter, the surface of the substrate is cleaned again in a second cleaning step to remove the residual cap layer on the surface of the dielectric layer. Finally, a dry cleaning step is performed to clean and dry the surface of the substrate.
摘要翻译：对导电层的制造方法进行说明。提供其上具有介电层的基板。介电层具有图案化结构，并且图案化结构暴露导电层的一部分。在第一清洁步骤中清洁基板的表面，并且在导电层的暴露部分上形成盖层。此后，在第二清洁步骤中再次清洁基板的表面，以去除介电层表面上的剩余盖层。最后，进行干洗步骤以清洁和干燥基材的表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式