专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5808476A Built-in current sensor for IDDQ monitoring 失效
标题翻译：内置电流传感器，用于IDDQ监控
公开(公告)号：US5808476A
公开(公告)日：1998-09-15
申请号：US688101
申请日：1996-07-29
申请人： Kuen-Jong Lee , Jing-Jou Tang
发明人： Kuen-Jong Lee , Jing-Jou Tang
IPC分类号： G01R31/30 , G01R31/26
CPC分类号： G01R31/3004 , G01R31/3008
摘要： An apparatus for measuring the current of a CMOS circuit includes a reference current generator to generate a reference current, a first current mirror to mirror the reference current, a second current mirror to mirror the current consumed by the CMOS circuit, an inverter to compare the above two mirrored currents and generate a signal to indicate which current is larger, and a multiplexer to switch between the normal circuit operation mode and the test mode. By this apparatus, it is possible to measure rapidly and accurately whether the CMOS circuit consumes an abnormally large current, thereby determining whether the CMOS circuit contains defects. This apparatus is based on the current-mode approach, hence can provide a high speed signal processing capability and has lower sensitivity to parameter deviation caused by process or operating temperature variations. It also provides scaleable sensing resolutions and programmable current reference.
摘要翻译：用于测量CMOS电路的电流的装置包括：产生参考电流的参考电流发生器，反映参考电流的第一电流镜;反映由CMOS电路消耗的电流的第二电流镜;反相器，用于比较高于两个镜像电流，并产生一个信号以指示哪个电流较大，以及多路复用器在正常电路操作模式和测试模式之间切换。通过该装置，可以快速准确地测量CMOS电路是否消耗异常大的电流，从而确定CMOS电路是否包含缺陷。该装置基于电流模式方式，因此可以提供高速信号处理能力，并且对由过程或工作温度变化引起的参数偏差具有较低的灵敏度。它还提供可扩展的感测分辨率和可编程电流参考。

2. 发明授权

US5631575A Intermediate voltage sensor for CMOS circuits 失效
标题翻译：用于CMOS电路的中压传感器
公开(公告)号：US5631575A
公开(公告)日：1997-05-20
申请号：US524848
申请日：1995-09-07
申请人： Kuen-Jong Lee , Jing-Jou Tang
发明人： Kuen-Jong Lee , Jing-Jou Tang
IPC分类号： G01R19/00 , H03K19/0948 , H03K19/00
CPC分类号： G01R19/0084
摘要： A built-in intermediate voltage sensor for CMOS circuits comprises a linear inverter, a first voltage control switch, a second voltage control switch, and a buffer. The linear inverter has an input end connected with an input signal under test. The first voltage control switch has a control end and an input end which are connected respectively with the input end and an output end of the linear inverter. The second voltage control switch has a control end and an input end which are connected respectively with the output end and the input end of the linear inverter. The buffer has an input end connected with the output end of the first voltage control switch and the output end of the second voltage control switch. The buffer gives forth an output voltage having a first logic value when the input signal has a voltage value of logic "0" or logic "1". The buffer is further capable of giving forth another output voltage having a second logic value when the input signal has a voltage value intermediate between logic "0" and logic "1".
摘要翻译：用于CMOS电路的内置中间电压传感器包括线性反相器，第一电压控制开关，第二电压控制开关和缓冲器。线性逆变器的输入端与被测输入信号相连。第一电压控制开关具有分别连接到线性逆变器的输入端和输出端的控制端和输入端。第二电压控制开关具有分别连接到线性逆变器的输出端和输入端的控制端和输入端。缓冲器具有与第一电压控制开关的输出端和第二电压控制开关的输出端连接的输入端。当输入信号具有逻辑“0”或逻辑“1”的电压值时，缓冲器提供具有第一逻辑值的输出电压。当输入信号具有介于逻辑“0”和逻辑“1”之间的电压值时，缓冲器还能够产生具有第二逻辑值的另一输出电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式