专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07888164B2 Programmable via structure and method of fabricating same 有权
标题翻译：可编程通孔结构及其制造方法
公开(公告)号：US07888164B2
公开(公告)日：2011-02-15
申请号：US12538120
申请日：2009-08-08
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Chung H. Lam , Albert M. Young
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Chung H. Lam , Albert M. Young
IPC分类号： H01L21/02
CPC分类号： H01L45/122 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A method of fabricating a programmable via structure is provided. The method includes providing a patterned heating material on a surface of an oxide layer. The oxide layer is located above a semiconductor substrate. A patterned dielectric material is formed having a least one via on a surface of the patterned heating material. The at least one via is filled with a phase change material such that a lower surface of the phase change material is in direct contact with a portion of the patterned heating material. A patterned diffusion barrier is formed on an exposed surface of the at least one via filled with the phase change material. A method of programmable a programmable via structure made by the method is also disclosed.
摘要翻译：提供一种制造可编程通孔结构的方法。该方法包括在氧化物层的表面上提供图案化的加热材料。氧化物层位于半导体衬底之上。在图案化加热材料的表面上形成具有至少一个通孔的图案化电介质材料。至少一个通孔填充有相变材料，使得相变材料的下表面与图案化加热材料的一部分直接接触。图案化的扩散阻挡层形成在填充有相变材料的至少一个通孔的暴露表面上。还公开了一种通过该方法制成的可编程通孔结构的方法。

2. 发明授权

US07652278B2 Programmable via structure and method of fabricating same 有权
标题翻译：可编程通孔结构及其制造方法
公开(公告)号：US07652278B2
公开(公告)日：2010-01-26
申请号：US11612631
申请日：2006-12-19
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Chung H. Lam , Albert M. Young
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Chung H. Lam , Albert M. Young
IPC分类号： H01L29/02 , H01L21/06
CPC分类号： H01L45/122 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A programmable via structure is provided as well as a method of fabricating the same. The inventive programmable via a semiconductor substrate. An oxide layer such as a thermal oxide is located on a surface of the semiconductor substrate. A patterned heating material is located on a surface of the oxide layer. The inventive structure also includes a patterned dielectric material having a least one via filled with a phase change material (PCM). The patterned dielectric material including the PCM filled via is located on a surface of the patterned heating material. A patterned diffusion barrier is located on an exposed surface of said at least one via filled with the phase change material. The inventive structure also includes contact vias that extend through the patterned dielectric material. The contact vias are filled with a conductive material which also extends onto the upper surface of the patterned dielectric material. A conductive material which serves as the input of the device is located atop the patterned diffusion barrier that is located directly above the via that is filled with the phase change material.
摘要翻译：提供了可编程通孔结构以及其制造方法。本发明可编程通过半导体衬底。诸如热氧化物的氧化物层位于半导体衬底的表面上。图案化的加热材料位于氧化物层的表面上。本发明的结构还包括具有填充有相变材料（PCM）的至少一个通孔的图案化电介质材料。包括PCM填充通孔的图案化电介质材料位于图案化加热材料的表面上。图案化扩散阻挡层位于所述至少一个充满相变材料的通孔的暴露表面上。本发明的结构还包括延伸通过图案化电介质材料的接触孔。接触通孔填充有也延伸到图案化电介质材料的上表面上的导电材料。用作器件输入的导电材料位于图案化的扩散阻挡层的顶部，其位于通过相变材料填充的正上方。

3. 发明申请

US20090311858A1 PROGRAMMABLE VIA STRUCTURE AND METHOD OF FABRICATING SAME 有权
标题翻译：可编程通过结构和制作方法
公开(公告)号：US20090311858A1
公开(公告)日：2009-12-17
申请号：US12538120
申请日：2009-08-08
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Chung H. Lam , Albert M. Young
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Chung H. Lam , Albert M. Young
IPC分类号： H01L21/768
CPC分类号： H01L45/122 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A programmable via structure is provided as well as a method of fabricating the same. The inventive programmable via a semiconductor substrate. An oxide layer such as a thermal oxide is located on a surface of the semiconductor substrate. A patterned heating material is located on a surface of the oxide layer. The inventive structure also includes a patterned dielectric material having a least one via filled with a phase change material (PCM). The patterned dielectric material including the PCM filled via is located on a surface of the patterned heating material. A patterned diffusion barrier is located on an exposed surface of said at least one via filled with the phase change material. The inventive structure also includes contact vias that extend through the patterned dielectric material. The contact vias are filled with a conductive material which also extends onto the upper surface of the patterned dielectric material. A conductive material which serves as the input of the device is located atop the patterned diffusion barrier that is located directly above the via that is filled with the phase change material.
摘要翻译：提供了可编程通孔结构以及其制造方法。本发明可编程通过半导体衬底。诸如热氧化物的氧化物层位于半导体衬底的表面上。图案化的加热材料位于氧化物层的表面上。本发明的结构还包括具有填充有相变材料（PCM）的至少一个通孔的图案化电介质材料。包括PCM填充通孔的图案化电介质材料位于图案化加热材料的表面上。图案化扩散阻挡层位于所述至少一个充满相变材料的通孔的暴露表面上。本发明的结构还包括延伸通过图案化电介质材料的接触孔。接触通孔填充有也延伸到图案化电介质材料的上表面上的导电材料。用作器件输入的导电材料位于图案化的扩散阻挡层的顶部，其位于通过相变材料填充的正上方。

4. 发明申请

US20080142775A1 PROGRAMMABLE VIA STRUCTURE AND METHOD OF FABRICATING SAME 有权
标题翻译：可编程通过结构和制作方法
公开(公告)号：US20080142775A1
公开(公告)日：2008-06-19
申请号：US11612631
申请日：2006-12-19
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Chung H. Lam , Albert M. Young
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Chung H. Lam , Albert M. Young
IPC分类号： H01L45/00
CPC分类号： H01L45/122 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A programmable via structure is provided as well as a method of fabricating the same. The inventive programmable via a semiconductor substrate. An oxide layer such as a thermal oxide is located on a surface of the semiconductor substrate. A patterned heating material is located on a surface of the oxide layer. The inventive structure also includes a patterned dielectric material having a least one via filled with a phase change material (PCM). The patterned dielectric material including the PCM filled via is located on a surface of the patterned heating material. A patterned diffusion barrier is located on an exposed surface of said at least one via filled with the phase change material. The inventive structure also includes contact vias that extend through the patterned dielectric material. The contact vias are filled with a conductive material which also extends onto the upper surface of the patterned dielectric material. A conductive material which serves as the input of the device is located atop the patterned diffusion barrier that is located directly above the via that is filled with the phase change material.
摘要翻译：提供了可编程通孔结构以及其制造方法。本发明可编程通过半导体衬底。诸如热氧化物的氧化物层位于半导体衬底的表面上。图案化的加热材料位于氧化物层的表面上。本发明的结构还包括具有填充有相变材料（PCM）的至少一个通孔的图案化电介质材料。包括PCM填充通孔的图案化电介质材料位于图案化加热材料的表面上。图案化扩散阻挡层位于所述至少一个充满相变材料的通孔的暴露表面上。本发明的结构还包括延伸通过图案化电介质材料的接触孔。接触通孔填充有也延伸到图案化电介质材料的上表面上的导电材料。用作器件输入的导电材料位于图案化的扩散阻挡层的顶部，其位于通过相变材料填充的正上方。

5. 发明申请

US20120270353A1 COUPLING PIEZOELECTRIC MATERIAL GENERATED STRESSES TO DEVICES FORMED IN INTEGRATED CIRCUITS 有权
标题翻译：联合压电材料生成的应力到集成电路中形成的器件
公开(公告)号：US20120270353A1
公开(公告)日：2012-10-25
申请号：US13532991
申请日：2012-06-26
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Glenn J. Martyna , Xiao Hu Liu , Dennis M. Newns , Kuan-Neng Chen
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Glenn J. Martyna , Xiao Hu Liu , Dennis M. Newns , Kuan-Neng Chen
IPC分类号： H01L21/02
CPC分类号： H01L49/00 , H01C10/103
摘要： A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.
摘要翻译：用于将压电材料产生的应力耦合到集成电路的致动装置的耦合结构包括围绕压电（PE）材料形成的刚性加强结构和致动装置，该致动装置包括具有电阻的压阻（PR）材料取决于施加的压力; 以及围绕PE材料和PR材料形成的软缓冲结构，缓冲结构设置在PE和PR材料之间以及加强件结构之间，其中加强件结构将PE和PR材料夹持到基底上，PE和PR材料并且其中软缓冲结构允许PE材料相对于PR材料自由移动，从而将由施加的电压产生的应力耦合到PE材料到PR材料，从而改变PR材料的电阻。

6. 发明授权

US08243507B2 Programmable via devices in back end of line level 有权
标题翻译：可通过线路级后端设备进行编程
公开(公告)号：US08243507B2
公开(公告)日：2012-08-14
申请号：US13107087
申请日：2011-05-13
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： G11C11/00
CPC分类号： H01L28/65 , H01L28/20 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1683 , Y10S977/754
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; at least one isolation layer over the first dielectric layer; a heater within the isolation layer; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 在所述第一介电层上方的至少一个隔离层; 隔离层内的加热器; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

7. 发明授权

US07977203B2 Programmable via devices with air gap isolation 有权
标题翻译：可通过具有气隙隔离的器件进行编程
公开(公告)号：US07977203B2
公开(公告)日：2011-07-12
申请号：US12544964
申请日：2009-08-20
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L28/20 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device includes a first dielectric layer; a heater over the first dielectric layer; an air gap separating at least a portion of the heater from the first dielectric layer; an isolation layer over the first dielectric layer covering at least a portion of the heater; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via including at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 第一介电层上的加热器; 将所述加热器的至少一部分与所述第一介电层分开的气隙; 覆盖所述加热器的至少一部分的所述第一介电层上的隔离层; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

8. 发明申请

US20110102016A1 Four-Terminal Reconfigurable Devices 有权
标题翻译：四端可重构设备
公开(公告)号：US20110102016A1
公开(公告)日：2011-05-05
申请号：US12987089
申请日：2011-01-08
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum
IPC分类号： H03K19/173
CPC分类号： H01L45/148 , H01L45/06 , H01L45/1206 , H01L45/126 , H01L45/144
摘要： Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer, the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer.
摘要翻译：提供了可重构的装置及其制造方法。在一个方面，提供了可重新配置的设备。可重构装置包括基板; 基底上的第一介电层; 导电层，凹入到与衬底相对的第一电介质层的一侧的至少一部分中; 在所述第一电介质层的与所述衬底相对的一侧上的至少一个第二电介质层，以覆盖所述导电层; 第二介电层内的加热器; 至少一个可编程通道延伸穿过第二电介质层，延伸穿过并被加热器包围并与导电层接触，该可编程通孔包括至少一个相变材料; 可编程通道上的覆盖层; 第一导电通孔和第二导电通孔，每个延伸通过第二介电层并与加热器接触; 以及延伸穿过第二介电层并与导电层接触的第三导电通孔。

9. 发明授权

US07880157B2 Four-terminal reconfigurable devices 有权
公开(公告)号：US07880157B2
公开(公告)日：2011-02-01
申请号：US12544089
申请日：2009-08-19
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum
IPC分类号： H01L29/04
CPC分类号： H01L45/148 , H01L45/06 , H01L45/1206 , H01L45/126 , H01L45/144
摘要： Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer, the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer.

10. 发明申请

US20100038621A1 Four-Terminal Reconfigurable Devices 有权
标题翻译：四端可重构设备
公开(公告)号：US20100038621A1
公开(公告)日：2010-02-18
申请号：US12544089
申请日：2009-08-19
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum
IPC分类号： H01L45/00
CPC分类号： H01L45/148 , H01L45/06 , H01L45/1206 , H01L45/126 , H01L45/144
摘要： Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer, the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer.
摘要翻译：提供了可重构的装置及其制造方法。在一个方面，提供了可重新配置的设备。可重构装置包括基板; 基底上的第一介电层; 导电层，凹入到与衬底相对的第一电介质层的一侧的至少一部分中; 在所述第一电介质层的与所述衬底相对的一侧上的至少一个第二电介质层，以覆盖所述导电层; 第二介电层内的加热器; 至少一个可编程通道延伸穿过第二电介质层，延伸穿过并被加热器包围并与导电层接触，该可编程通孔包括至少一个相变材料; 可编程通道上的覆盖层; 第一导电通孔和第二导电通孔，每个延伸通过第二介电层并与加热器接触; 以及延伸穿过第二介电层并与导电层接触的第三导电通孔。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式