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1. 发明授权

US06914658B2 Method for fabricating a moat around an active pixel area of a microelectronic image projection device 失效
标题翻译：用于在微电子图像投影装置的有源像素区域周围制造护城河的方法
公开(公告)号：US06914658B2
公开(公告)日：2005-07-05
申请号：US10330931
申请日：2002-12-26
申请人： Krishna Seshan , Chaoyang Li , Geoffery L. Bakker , Lawrence Dass
发明人： Krishna Seshan , Chaoyang Li , Geoffery L. Bakker , Lawrence Dass
IPC分类号： G02F1/1339 , G02F1/1341
CPC分类号： G02F1/1341 , G02F1/13394
摘要： A method for fabricating a microelectronic image projection device. One or more nitride dams are formed upon the substrate of the device surrounding the active pixel area. The nitride dams help to contain the liquid crystal and confine the epoxy sealant. In alternative embodiments one or more nitride pillars are formed on the substrate to support the cover glass and maintain the distance between the cover glass and the active pixel area of the substrate. The nitride dams and pillars may be formed on the substrate through an ion implantation method in which HDP nitride is implanted with, for example, silicon ions. The ion implantation causes those areas of the nitride that are implanted with ions to etch more slowly than those areas that are not implanted with ions. This etch rate differential allows formation of the nitride formations with a non-contact single mask etching process.
摘要翻译：一种微电子图像投影装置的制造方法。一个或多个氮化物阻挡层形成在围绕有源像素区域的器件的衬底上。氮化物坝有助于容纳液晶并限制环氧树脂密封剂。在替代实施例中，一个或多个氮化物柱形成在衬底上以支撑盖玻璃并且保持盖玻璃和衬底的有源像素区域之间的距离。可以通过离子注入方法在衬底上形成氮化物坝和柱，其中用例如硅离子注入HDP氮化物。离子注入导致注入离子的氮化物的那些区域比没有注入离子的区域蚀刻得更慢。该蚀刻速率差异允许用非接触单掩模蚀刻工艺形成氮化物结构。

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