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1. 发明申请

US20080185721A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080185721A1
公开(公告)日：2008-08-07
申请号：US12021446
申请日：2008-01-29
申请人： Kouji Oomori , Seishi Oida
发明人： Kouji Oomori , Seishi Oida
IPC分类号： H01L23/488 , H01L21/44
CPC分类号： H05K3/3436 , H01L21/4853 , H01L23/49816 , H01L23/49838 , H01L23/49866 , H01L24/48 , H01L2224/451 , H01L2224/48227 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/15311 , H01L2924/181 , H05K3/3463 , H05K2201/094 , H05K2203/0465 , Y02P70/613 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a circuit board having a number of electrode portions on the front side and the underside, an electronic circuit element such as a semiconductor chip bonded to the electrode portions on the front side of the circuit board and composing an electronic circuit; and a plurality of ball electrodes for external connection, the ball electrodes being formed on the electrode portions on the underside of the circuit board. Of the electrode portions on the underside of the circuit board, an electrode portion on the outer periphery is formed larger than an electrode portion on the inner periphery. The plurality of ball electrodes are solder balls heated and melted on the electrode portions on the underside of the board so as to form an alloy on the interfaces, the solder balls containing tin and silver but not containing lead.
摘要翻译：本发明的半导体器件包括在前侧和下侧具有多个电极部分的电路板，与电路板前侧的电极部分接合的半导体芯片等电子电路元件，电子电路; 以及多个用于外部连接的球形电极，所述球形电极形成在所述电路板的下侧上的所述电极部分上。在电路板的下侧的电极部分中，外周上的电极部分形成为大于内周上的电极部分。多个球电极是在板的下侧的电极部分上加热熔化的焊球，以便在界面上形成合金，焊锡球含有锡和银，但不含铅。

2. 发明授权

US09018761B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09018761B2
公开(公告)日：2015-04-28
申请号：US12021446
申请日：2008-01-29
申请人： Kouji Oomori , Seishi Oida
发明人： Kouji Oomori , Seishi Oida
IPC分类号： H01L23/52 , H05K3/34 , H01L21/48 , H01L23/498 , H01L23/00
CPC分类号： H05K3/3436 , H01L21/4853 , H01L23/49816 , H01L23/49838 , H01L23/49866 , H01L24/48 , H01L2224/451 , H01L2224/48227 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/15311 , H01L2924/181 , H05K3/3463 , H05K2201/094 , H05K2203/0465 , Y02P70/613 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a circuit board having a number of electrode portions on the front side and the underside, an electronic circuit element such as a semiconductor chip bonded to the electrode portions on the front side of the circuit board and composing an electronic circuit; and a plurality of ball electrodes for external connection, the ball electrodes being formed on the electrode portions on the underside of the circuit board. Of the electrode portions on the underside of the circuit board, an electrode portion on the outer periphery is formed larger than an electrode portion on the inner periphery. The plurality of ball electrodes are solder balls heated and melted on the electrode portions on the underside of the board so as to form an alloy on the interfaces, the solder balls containing tin and silver but not containing lead.
摘要翻译：本发明的半导体器件包括在前侧和下侧具有多个电极部分的电路板，与电路板前侧的电极部分接合的半导体芯片等电子电路元件，电子电路; 以及多个用于外部连接的球形电极，所述球形电极形成在所述电路板的下侧上的所述电极部分上。在电路板的下侧的电极部分中，外周上的电极部分形成为大于内周上的电极部分。多个球电极是在板的下侧的电极部分上加热熔化的焊球，以便在界面上形成合金，焊锡球含有锡和银，但不含铅。

3. 发明授权

US08097962B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08097962B2
公开(公告)日：2012-01-17
申请号：US12372130
申请日：2009-02-17
申请人： Kouji Oomori
发明人： Kouji Oomori
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/49838 , H01L21/4853 , H01L23/49811 , H01L23/49822 , H01L23/49827 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/105 , H01L2224/16225 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor device includes a substrate having external connection terminals, and a semiconductor chip mounted over a semiconductor-chip mounting portion of the substrate. The external connection terminals are formed by sequentially forming an electroless nickel plating layer, an electroless gold plating layer, and an electrolytic gold plating layer on a terminal portion formed on a surface of the substrate.
摘要翻译：半导体器件包括具有外部连接端子的衬底和安装在衬底的半导体芯片安装部分上的半导体芯片。外部连接端子通过在形成在基板的表面上的端子部分上依次形成化学镀镍层，无电镀金层和电解镀金层而形成。

4. 发明授权

US08907468B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08907468B2
公开(公告)日：2014-12-09
申请号：US13308038
申请日：2011-11-30
申请人： Kouji Oomori
发明人： Kouji Oomori
IPC分类号： H01L23/48 , H01L23/498 , H01L21/48 , H01L23/00 , H01L25/10
CPC分类号： H01L23/49838 , H01L21/4853 , H01L23/49811 , H01L23/49822 , H01L23/49827 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/105 , H01L2224/16225 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor device includes a substrate having external connection terminals, and a semiconductor chip mounted over a semiconductor-chip mounting portion of the substrate. The external connection terminals are formed by sequentially forming an electroless nickel plating layer, an electroless gold plating layer, and an electrolytic gold plating layer on a terminal portion formed on a surface of the substrate.
摘要翻译：半导体器件包括具有外部连接端子的衬底和安装在衬底的半导体芯片安装部分上的半导体芯片。外部连接端子通过在形成在基板的表面上的端子部分上依次形成化学镀镍层，无电镀金层和电解镀金层而形成。

5. 发明授权

US08698309B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08698309B2
公开(公告)日：2014-04-15
申请号：US13397892
申请日：2012-02-16
申请人： Shigefumi Dohi , Kouji Oomori
发明人： Shigefumi Dohi , Kouji Oomori
IPC分类号： H01L23/48 , H01L23/02
CPC分类号： H01L25/105 , H01L23/49811 , H01L2224/16225 , H01L2225/1023 , H01L2225/1058 , H01L2924/15311 , H01L2924/15331 , H01L2924/3511 , H05K3/3436 , H05K3/3452 , H05K2201/099
摘要： A semiconductor device includes a first semiconductor device and second semiconductor device stacked on the first semiconductor device. The first semiconductor device includes a first interconnect substrate, a first semiconductor element provided on an upper surface of the first interconnect substrate, a first electrode provided on the upper surface of the first interconnect substrate, and an insulating layer having an opening portion through which part of the first electrode is exposed. The second semiconductor device includes a second interconnect substrate, a second semiconductor element provided on an upper surface of the second interconnect substrate, a second electrode provided on a lower surface of the second interconnect substrate, and an inter-device connection terminal connected to the second electrode. Part of the first electrode exposed through the opening portion has a smaller area than an area of the opening portion.
摘要翻译：半导体器件包括堆叠在第一半导体器件上的第一半导体器件和第二半导体器件。第一半导体器件包括第一互连衬底，设置在第一互连衬底的上表面上的第一半导体元件，设置在第一互连衬底的上表面上的第一电极和具有开口部分的绝缘层，的第一电极暴露。第二半导体器件包括第二互连衬底，设置在第二互连衬底的上表面上的第二半导体元件，设置在第二互连衬底的下表面上的第二电极和连接到第二互连衬底的器件间连接端子电极。通过开口部暴露的第一电极的一部分具有比开口部的面积小的面积。

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