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    • 5. 发明授权
    • Method of improving the planarization of wiring by CMP
    • 通过CMP改善布线平面化的方法
    • US06465354B1
    • 2002-10-15
    • US09435612
    • 1999-11-08
    • Kazumi SugaiNobukazu ItoHiroaki Tachibana
    • Kazumi SugaiNobukazu ItoHiroaki Tachibana
    • H01L2144
    • H01L21/2885H01L21/7684H01L21/76877
    • A manufacturing method of a semiconductor device which includes wiring dense part and wiring isolated part enables occurrence of ‘Erosion’ to be prevented, as well as it is capable of being prevented occurrence of ‘micro-scratch’ on surface of oxide layer. The manufacturing method sets a plurality of trench-parts on insulation layer, before forming metal plating layer consisting of copper so as to embed trench-parts. Manufacturing process implements annealing in such a way that grain-size of the metal plating layer in the wiring dense part becomes smaller than the grain-size in the wiring isolated part. The annealing, for instance, is implemented with substrate temperature of 70 to 200° C. Subsequently, the manufacturing step perfects the semiconductor device while polishing the metal plating layer to cause the surface of the substrate to be flat.
    • 包括布线致密部分和布线隔离部分的半导体器件的制造方法能够防止“侵蚀”的发生,并且能够防止在氧化物层的表面上发生“微划痕”。 在形成由铜组成的金属镀层之前,制造方法在绝缘层上设置多个沟槽部分以嵌入沟槽部分。 制造工序以布线致密部中的金属镀层的粒径变得小于配线隔离部的晶粒尺寸的方式进行退火。 例如,退火的基板温度为70〜200℃。随后,制造步骤在抛光金属镀层的同时使半导体器件完美化,使基板的表面平坦。
    • 9. 发明申请
    • Plating apparatus and manufacturing process for semiconductor device
    • 半导体器件的电镀设备及制造工艺
    • US20070080066A1
    • 2007-04-12
    • US11543235
    • 2006-10-05
    • Hiroaki Tachibana
    • Hiroaki Tachibana
    • C25B15/00
    • C25D17/10C25D7/123C25D17/001C25D17/12C25D21/12H01L21/2885
    • The present invention is to provide a plating apparatus and a process for manufacturing a semiconductor device whereby passivation of an anode can be prevented and reduction in a current efficiency and a deposition rate of a plating film can be prevented. A plating apparatus 1 has a plating bath 11 which contains a plating solution; an anode 12 and a cathode 13 within the plating bath 11; and a switching control unit 16 which switches between a first state where a current is applied between a plating object 2 in contact with the plating solution and the anode 12 and a second state where a current is interrupted between the plating object 2 and the anode 12 while applying a current between the anode 12 and the cathode 13. The anode 12 is a soluble electrode containing a metal capable of being passivated.
    • 本发明提供一种电镀装置和半导体装置的制造方法,能够防止阳极的钝化,能够防止电镀效率的降低和镀膜的成膜速度的降低。 电镀装置1具有含有电镀液的电镀槽11, 电镀槽11内的阳极12和阴极13; 以及开关控制单元16,其切换在与电镀液接触的电镀对象物2与阳极12之间施加电流的第一状态和电镀对象物2与阳极12之间电流中断的第二状态 同时在阳极12和阴极13之间施加电流。阳极12是含有能够钝化的金属的可溶电极。