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1. 发明授权

US06928651B2 Initialization method of optical recording medium 失效
标题翻译：光记录介质的初始化方法
公开(公告)号：US06928651B2
公开(公告)日：2005-08-09
申请号：US10475070
申请日：2003-02-19
申请人： Kotaro Kurokawa , Takeshi Yamasaki , Tomomi Yukumoto , Masanobu Yamamoto , Daisuke Ueda
发明人： Kotaro Kurokawa , Takeshi Yamasaki , Tomomi Yukumoto , Masanobu Yamamoto , Daisuke Ueda
IPC分类号： G11B7/0055 , G11B7/242 , G11B7/26 , G11B7/24
CPC分类号： G11B7/26 , G11B7/24038 , G11B7/268
摘要： An initialization method of an optical recording medium having a plurality of optical recording layers capable of reducing uneven initialization due to light interference caused at the time of initialization without deterioration of information recording/reproducing signal characteristics of the recording layers is provided. An initialization method of an optical recording medium, wherein a second optical recording layer and a first optical recording layer are successively stacked via an interlayer on a substrate, a protective layer is formed further on the first optical recording layer, a recording film in the first optical recording layer comprises a phase change type recording material, and a recording/reproducing light is irradiated from the protective film side at the time of recording/reproducing, a material composing the interlayer has a sufficient transmittance for a wavelength of the recording/reproducing light and absorption for an initializing light, and, in a step of initializing by irradiating an initializing light on the first optical recording layer from the protective film side, laser light having a wavelength range of 200 nm to 400 nm is used as the initializing light.
摘要翻译：提供了一种具有多个光记录层的光记录介质的初始化方法，该多个光记录层能够在初始化时引起由于光干扰引起的不均匀初始化，而不会导致记录层的信息记录/再现信号特性的劣化。光学记录介质的初始化方法，其中第二光学记录层和第一光学记录层通过衬底上的中间层连续层叠，在第一光学记录层上进一步形成保护层，在第一光学记录层中的记录膜光记录层包括相变型记录材料，并且在记录/再现时从保护膜侧照射记录/再现光，构成中间层的材料对于记录/再现光的波长具有足够的透射率并且对于初始化光进行吸收，并且在通过从保护膜侧将初始化光照射在第一光学记录层上的初始化步骤中，使用波长范围为200nm至400nm的激光作为初始化光。

2. 发明授权

US06999396B2 Initialization method of optical recording medium 失效
标题翻译：光记录介质的初始化方法
公开(公告)号：US06999396B2
公开(公告)日：2006-02-14
申请号：US10474085
申请日：2003-02-07
申请人： Kotaro Kurokawa , Takeshi Yamasaki , Daisuke Ueda , Shigeki Takagawa , Masanobu Yamamoto
发明人： Kotaro Kurokawa , Takeshi Yamasaki , Daisuke Ueda , Shigeki Takagawa , Masanobu Yamamoto
IPC分类号： G11B7/00
CPC分类号： G11B7/268 , G11B7/24038 , G11B7/252 , G11B2007/0013
摘要： An initialization method of an optical recording medium having a plurality of optical recording layers capable of reducing initialization unevenness due to light interference caused at the time of initialization without deteriorating information recording/reproducing signal characteristics of the optical recording layers is provided. An initialization method of an optical recording medium, wherein a second optical recording layer and a first optical recording layer are stacked via an interlayer on a substrate in an order, a protective layer is formed further on the first optical recording layer, a recording film in the first optical recording layer comprises a phase change type recording material, and a recording/reproducing light is irradiated from the protective film side at the time of recording/reproducing, and in a step of initializing by irradiating an initializing light on the first optical recording layer from the protective film side, the first optical recording layer is initialized so that an energy density ID1 per unit area of an incident light of the initializing light at respective points in a light convergence region converged on the first optical recording layer and an energy density ID2 per unit area at the respective points of the light convergence region of a return light, which is the initializing light transmitted through the first optical recording layer to reach the second optical recording layer, reflected on the second optical recording layer and again returned to the first optical recording layer, satisfy ID2/ID1≦0.002.
摘要翻译：提供了具有多个光记录层的光记录介质的初始化方法，其能够在初始化时引起由于光干扰引起的初始化不均匀性，而不会使信息记录/再现信号特性的光记录层恶化。一种光记录介质的初始化方法，其中第二光记录层和第一光记录层经由基板上的中间层依次层叠，在第一光记录层上进一步形成保护层，记录膜第一光记录层包括相变型记录材料，并且在记录/再现时从保护膜侧照射记录/再现光，并且在通过在第一光学记录上照射初始化光来进行初始化的步骤从保护膜侧开始，第一光记录层被初始化，使得会聚在第一光记录层上的光会聚区域各点处的初始化光的入射光的每单位面积的能量密度ID 1和能量在作为初始化的返回光的光会聚区域的各个点处的单位面积的密度ID 2 透射通过第一光学记录层的光到达第二光学记录层，在第二光学记录层上反射并再次返回到第一光学记录层，满足ID 2 / ID 1 <= 0.002。

3. 发明授权

US07295508B2 Optical disk 失效
标题翻译：光盘
公开(公告)号：US07295508B2
公开(公告)日：2007-11-13
申请号：US10491980
申请日：2003-08-05
申请人： Daisuke Ueda , Takeshi Yamasaki , Toshiyuki Kashiwagi
发明人： Daisuke Ueda , Takeshi Yamasaki , Toshiyuki Kashiwagi
IPC分类号： G11B7/24
CPC分类号： G11B7/24056 , G11B7/24038
摘要： The present invention provides an optical disc which is constituted by a substrate, a recording layer, and a protection layer and is irradiated with a laser beam from the protection layer side. The optical disc has the substrate whose diameter is greater than 50 mm, the recording layer provided on the substrate, and the protection layer which is layered on the recording layer and thinner than the substrate and on which a recording or reproducing laser beam is incident. The total thickness of the optical disc is 0.7 mm or more.
摘要翻译：本发明提供一种由基板，记录层和保护层构成的光盘，并从保护层侧照射激光束。光盘具有直径大于50mm的基板，设置在基板上的记录层以及分层在记录层上并且比基板更薄并且记录或再现激光束入射的保护层。光盘的总厚度为0.7mm以上。

4. 发明授权

US08582277B2 Laminated type ceramic electronic parts 有权
标题翻译：层压型陶瓷电子零件
公开(公告)号：US08582277B2
公开(公告)日：2013-11-12
申请号：US13300952
申请日：2011-11-21
申请人： Hirobumi Tanaka , Makoto Endo , Satoko Ueda , Daisuke Ueda , Shogo Murosawa , Daisuke Yoshida , Kenta Ono , Minoru Ogasawara , Tatsuya Kikuchi
发明人： Hirobumi Tanaka , Makoto Endo , Satoko Ueda , Daisuke Ueda , Shogo Murosawa , Daisuke Yoshida , Kenta Ono , Minoru Ogasawara , Tatsuya Kikuchi
IPC分类号： H01G4/12 , C04B35/468
CPC分类号： H01G4/1227 , H01G4/1281 , H01G4/30
摘要： A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO3 (A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO2.
摘要翻译：一种多层陶瓷电子部件，其特征在于，具有层叠有电介质层和内部电极层的元件体。电介质层由介电陶瓷组合物构成，包括：具有由式ABO 3表示的钙钛矿结构的化合物（A是选自Ba，Ca和Sr中的至少一种; B是选自Ti，Zr和Hf中的至少一种）; Mg的氧化物; 包括Sc和Y的稀土元素的氧化物; 和包含Si的氧化物。电介质陶瓷组合物包含存在于电介质颗粒之间的多个电介质颗粒和晶界。在晶界中，当Mg和Si的含量比分别设定为D（Mg）和D（Si）时，D（Mg）以MgO计为0.2〜1.8重量％，D（Si）为0.4〜8.0 重量％。

5. 发明授权

US08307772B2 Sewing machine 有权
标题翻译：缝纫机
公开(公告)号：US08307772B2
公开(公告)日：2012-11-13
申请号：US12656236
申请日：2010-01-21
申请人： Akifume Nakashima , Daisuke Ueda
发明人： Akifume Nakashima , Daisuke Ueda
IPC分类号： D05B23/00
CPC分类号： D05C7/00 , D05B29/06 , D05D2303/00
摘要： A sewing machine including a presser foot that presses a workpiece, a presser bar that has a lower end allowing detachable attachment of the presser foot; a presser bar vertically moving mechanism that moves the presser bar up and down; a presser bar driver that drives the presser bar vertically moving mechanism; a needle plate that has an upper surface for placing the workpiece; a projecting element that is detachably attached to the presser bar and that is driven up and down with the presser bar as the presser bar is driven up and down by the presser bar driver through the presser bar vertically moving mechanism to form embosses on the workpiece by downwardly pressing the workpiece; and a receiving section that is provided on the upper surface of the needle plate that opposes the projecting element to receive a tip of the projecting element.
摘要翻译：一种缝纫机，包括按压工件的压脚，具有下端的压脚，允许压脚可拆卸地附接; 按压杆上下移动机构; 一个驱动压杆垂直移动机构的压脚驱动器; 具有用于放置所述工件的上表面的针板; 突出元件，其可拆卸地附接到压脚杆，并且当压杆作为压杆时上下驱动，压杆驱动器通过压杆垂直移动机构被上下驱动，以在工件上形成压花，以通过向下按压工件; 以及接收部，其设置在与所述突出元件相对的所述针板的上表面上，以容纳所述突出元件的前端。

6. 发明授权

US08203376B2 Semiconductor device and method for driving the same 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08203376B2
公开(公告)日：2012-06-19
申请号：US12445390
申请日：2007-11-20
申请人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H03K17/687
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/739 , H01L29/8124
摘要： A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.
摘要翻译：半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。

7. 发明授权

US08134191B2 Solid-state imaging device, signal processing method, and camera 有权
标题翻译：固态成像装置，信号处理方法和相机
公开(公告)号：US08134191B2
公开(公告)日：2012-03-13
申请号：US12160291
申请日：2006-07-11
申请人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
发明人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
IPC分类号： H01L31/09
CPC分类号： H04N9/045 , H04N5/33 , H04N5/332
摘要： A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.
摘要翻译：一种使用可见光进行彩色成像并使用红外光成像的固态成像装置，所述固态成像装置包括多个二维排列的像素单元，每个像素单元中的每一个主要透过可见光和红外线之一光，其中滤光器被布置成使得布置有主要透射可见光的多个滤光器的第一布置单元和布置有主要透射可见光的滤光器的第二单元和布置有主要透射红外光的滤光器的布置的第二单元是布置的，交替地排列在行方向和列方向上。此外，在第一单元中布置有包括发射红光，绿光和蓝光中的一种的三种滤光器的滤色器，并且在第二种布置中布置了四种滤色片，每种滤色片透过红光，绿光，蓝光和红外灯。

8. 发明授权

US08076698B2 Transistor and method for operating the same 有权
标题翻译：晶体管及其操作方法
公开(公告)号：US08076698B2
公开(公告)日：2011-12-13
申请号：US11995040
申请日：2006-06-27
申请人： Daisuke Ueda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Masahiro Hikita , Hiroaki Ueno
发明人： Daisuke Ueda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Masahiro Hikita , Hiroaki Ueno
IPC分类号： H01L31/0328
CPC分类号： H01L29/739 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/7786
摘要： In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.
摘要翻译：在晶体管中，在蓝宝石衬底101上依次形成AlN缓冲层102，未掺杂的GaN层103，未掺杂的AlGaN层104，p型控制层105和p型接触层106。晶体管还包括与p型接触层106欧姆接触的栅电极110以及设置在未掺杂的AlGaN层104上的源电极108和漏极109.通过向p型控制层105施加正电压，孔被注入到通道中以增加在通道中流动的电流。

9. 发明申请

US20100327486A1 Manufacturing Method of Cylindrical Member and Manufacturing Method of Vibration Damping Rubber Bushing Having the Cylindrical Member 有权
标题翻译：圆柱形构件的制造方法和具有圆柱形构件的振动阻尼橡胶衬套的制造方法
公开(公告)号：US20100327486A1
公开(公告)日：2010-12-30
申请号：US12821429
申请日：2010-06-23
申请人： Norimasa Kuki , Yoshikane Akiyama , Mitiharu Hikosaka , Kazuhiko Kato , Kazumasa Sekido , Daisuke Ueda , Harumi Niwa , Hiroshi Itazu , Yuji Mizuno
发明人： Norimasa Kuki , Yoshikane Akiyama , Mitiharu Hikosaka , Kazuhiko Kato , Kazumasa Sekido , Daisuke Ueda , Harumi Niwa , Hiroshi Itazu , Yuji Mizuno
IPC分类号： B28B1/02
CPC分类号： F16F1/3842 , B21H1/18 , B21J5/00 , B21J5/008 , B21J5/12 , B21J9/025 , B21K21/12 , F16F1/3828 , F16F1/3863 , F16F2230/0035 , F16F2230/02
摘要： A method of manufacturing a cylindrical member having anti-slip projections formed on axial end faces, the method comprising the steps of: employing a roller die, which is provided with a circumferential die groove of annular form extending through a medial section in a generatrix direction of a die face defined by an integral tapered outside peripheral face, and with a plurality of sloping die grooves extending in a tapered slope direction of the die face situated to both large-diameter and small-diameter sides of the circumferential die groove; providing plastic working to the axial end face with the small-diameter side of the roller die facing towards an inner peripheral side of the cylindrical member and with the large-diameter side facing towards an outer peripheral side, by pushing the die face against the axial end face while rotating circumferentially; and forming simultaneously an annular water barrier projection and the anti-slip projections.
摘要翻译：一种制造具有形成在轴向端面上的防滑突起的圆柱形构件的方法，所述方法包括以下步骤：使用辊模，其设置有沿母线方向延伸穿过中间部分的环形的周向模槽具有由整体的锥形外周面限定的模具面，并且具有沿着位于周向模槽的大直径侧和小直径侧的模面的锥形倾斜方向延伸的多个倾斜模槽; 向所述轴向端面提供塑性加工，所述辊模的小直径侧朝向所述圆筒形构件的内周侧，并且所述大直径侧面向外周侧，通过将所述模具面朝向轴向端面旋转; 同时形成环形防水突起和防滑突起。

10. 发明授权

US07825434B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07825434B2
公开(公告)日：2010-11-02
申请号：US11647218
申请日：2006-12-29
申请人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/08
CPC分类号： H01L29/7783 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/432 , H01L29/452 , H01L29/7787
摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.
摘要翻译：氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及第四半导体层，形成在与所述主表面相对的所述第一半导体层的表面上，相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体构成。

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