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    • 8. 发明授权
    • Solid state imaging device and producing method thereof
    • 固态成像装置及其制造方法
    • US07345349B2
    • 2008-03-18
    • US11785839
    • 2007-04-20
    • Kiyofumi YamamotoKazuhiro Nishida
    • Kiyofumi YamamotoKazuhiro Nishida
    • H01L31/0203
    • H01L27/14634H01L27/14618H01L27/14632H01L27/14636H01L27/14683H01L27/14687H01L27/1469H01L2224/73204
    • A semiconductor substrate of a solid state imaging device is connected to a cover glass, and then a backgrind is performed so as to make the thickness smaller. On a first face of the semiconductor substrate is formed plural units which is constructed of image sensors and plural contact terminals. At positions of the contact terminals, plural through-holes are formed on the bottom side of the semiconductor substrate, and the contact terminals appear on a second surface of the semiconductor substrate. On an interconnection circuit pattern of the assembly substrate are formed stud bumps. When the semiconductor substrate is assembled onto the assembly substrate, the stud bumps enter into the through-holes to contact to the contact terminals. Thus the interconnection circuit pattern is electrically connected to the image sensors.
    • 将固态成像装置的半导体基板连接到盖玻璃上,然后进行背面研磨以使厚度更小。 在半导体基板的第一面形成由图像传感器和多个接触端子构成的多个单元。 在接触端子的位置处,在半导体衬底的底侧形成有多个通孔,并且接触端子出现在半导体衬底的第二表面上。 在组装衬底的互连电路图案上形成有凸块。 当将半导体衬底组装到组件衬底上时,凸块凸起进入通孔以与接触端子接触。 因此,互连电路图案电连接到图像传感器。