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1. 发明公开

EP2595164A1 Perpendicularly magnetized thin film structure and method for manufacturing the same 有权
标题翻译： Senkrecht magnetisierteDünnschichtstrukturund Verfahren zur Herstellung davon
公开(公告)号：EP2595164A1
公开(公告)日：2013-05-22
申请号：EP12192825.3
申请日：2012-11-15
申请人： Korea Institute of Science and Technology
发明人： Choi, Gyung Min , Min, Byoung Chul , Shin, Kyung Ho
IPC分类号： H01F41/32 , H01F10/12
CPC分类号： G11B5/645 , G11B5/65 , G11B5/66 , G11B5/72 , G11B5/84 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L43/10 , H01L43/12
摘要： A perpendicularly magnetized thin film structure and a method of manufacturing the perpendicularly magnetized thin film structure are provided. The perpendicularly magnetized thin film structure includes i) a base layer, ii) a magnetic layer located on the base layer and having an L1 0 -crystalline structure, and iii) a metal oxide layer located on the magnetic layer.
摘要翻译：提供垂直磁化的薄膜结构和制造垂直磁化的薄膜结构的方法。垂直磁化的薄膜结构包括：i）基底层，ii）位于基底层上并具有L1 0晶格结构的磁性层，和iii）位于磁性层上的金属氧化物层。

2. 发明公开

EP1460150A1 Method for fabricating bismuth thin film and device using said film 审中-公开
标题翻译：一种生产铋的薄层和使用这种层装置的方法
公开(公告)号：EP1460150A1
公开(公告)日：2004-09-22
申请号：EP04251103.0
申请日：2004-02-26
申请人： Korea Institute of Science and Technology
发明人： Lee, Woo Young , Shin, Kyung Ho , Han, Suk Hee , Chang, Joon Yeon , Kim, Hi Jung , Kim, Dal Young , Lee, Kwan Hyi , Lee, Kyoung II , Jeun, Min Hong
IPC分类号： C25D3/54 , C25D5/34 , C25D5/50 , G11B5/39 , H01F41/26 , H01F41/18 , H01L43/12
CPC分类号： H01F10/1936 , C25D3/54 , C25D5/50 , G11C11/14 , H01F1/401 , H01F41/18 , H01F41/26 , H01L43/12
摘要： In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.
摘要翻译：在用于制造具有在室温下具有大MR（磁阻）和用于制造使用该方法的自旋电子器件的方法的铋薄膜的方法，铋薄膜是通过在electrodepostiting方法和溅射方法制成，且具有非常大的MR 在室温下的特性，并且它可以被应用于各种自旋电子学设备。

3. 发明公开

EP2182532A1 Magnetic tunnel junction structure having free layer with oblique magnetization 失效转让
标题翻译： Magnetische Tunnelkontaktstruktur versehen mit einer freien Schicht mitSchrägmagnetisierung
公开(公告)号：EP2182532A1
公开(公告)日：2010-05-05
申请号：EP09252502.1
申请日：2009-10-29
申请人： Korea Institute of Science and Technology
发明人： Shin, Kyung Ho , Min, Byoung Chul
IPC分类号： H01F10/32
CPC分类号： H01F10/3254 , B82Y25/00 , G11C11/161 , H01F10/3277 , H01F10/3286 , H01L43/08 , H03B15/006 , Y10T428/1114 , Y10T428/1143
摘要： The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction; a second magnetic layer having a reversible magnetization direction; a non-magnetic layer formed between the first magnetic layer and the second magnetic layer; a third magnetic layer allowing the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer, and having a perpendicular magnetic anisotropic energy thereof larger than an in-plane magnetic anisotropic energy thereof; and a crystal-structure separation layer formed between the second magnetic layer and the third magnetic layer for separating a crystallographic structure between the second and the third magnetic layers.
According to the present invention, a free magnetic layer constituting the magnetic tunnel junction structure consists of at least two or more magnetic thin films having different magnetic anisotropic directions and sizes, thereby independently optimizing the effect of increasing a read signal value and reducing a critical current value required for switching.
摘要翻译：本发明提供一种磁性隧道结结构，其包括具有固定的磁化方向的第一磁性层; 具有可逆磁化方向的第二磁性层; 形成在所述第一磁性层和所述第二磁性层之间的非磁性层; 允许第二磁性层的磁化方向相对于第二磁性层的平面通过与第二磁性层的磁耦合而倾斜的第三磁性层，并且其垂直磁性各向异性能量大于平面内的磁性各向异性能; 以及形成在第二磁性层和第三磁性层之间的用于分离第二和第三磁性层之间的结晶结构的晶体结构分离层。根据本发明，构成磁隧道结结构的自由磁性层由具有不同磁各向异性方向和尺寸的至少两个以上的磁性薄膜构成，从而独立地优化增加读取信号值并降低临界电流的效果切换所需的值。

4. 发明授权

EP2287863B1 Magnetic tunnel junction device and method for manufacturing the same 有权
标题翻译：磁性隧道结装置及其制造方法
公开(公告)号：EP2287863B1
公开(公告)日：2017-11-15
申请号：EP10162168.8
申请日：2010-05-06
申请人： Korea Institute of Science and Technology
发明人： Choi, Gyung-Min , Min, Byoung Chul , Shin, Kyung Ho
IPC分类号： H01F10/32 , H01F41/30
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/091 , G01R33/098 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/14 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/10 , Y10T428/115

5. 发明授权

EP2182532B1 Magnetic tunnel junction structure having free layer with oblique magnetization 失效转让
标题翻译：磁隧道结结构设置有具有倾斜磁化自由层
公开(公告)号：EP2182532B1
公开(公告)日：2017-01-11
申请号：EP09252502.1
申请日：2009-10-29
申请人： Korea Institute of Science and Technology
发明人： Shin, Kyung Ho , Min, Byoung Chul
IPC分类号： H01F10/32 , H01L43/08 , G11C11/16
CPC分类号： H01F10/3254 , B82Y25/00 , G11C11/161 , H01F10/3277 , H01F10/3286 , H01L43/08 , H03B15/006 , Y10T428/1114 , Y10T428/1143

6. 发明授权

EP2595164B1 Perpendicularly magnetized thin film structure and method for manufacturing the same 有权
标题翻译：垂直磁化薄膜结构及其制造方法
公开(公告)号：EP2595164B1
公开(公告)日：2018-01-10
申请号：EP12192825.3
申请日：2012-11-15
申请人： Korea Institute of Science and Technology
发明人： Choi, Gyung Min , Min, Byoung Chul , Shin, Kyung Ho
IPC分类号： H01F41/32 , H01F10/12
CPC分类号： G11B5/645 , G11B5/65 , G11B5/66 , G11B5/72 , G11B5/84 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L43/10 , H01L43/12
摘要： A perpendicularly magnetized thin film structure and a method of manufacturing the perpendicularly magnetized thin film structure are provided. The perpendicularly magnetized thin film structure includes i) a base layer, ii) a magnetic layer located on the base layer and having an L1 0 -crystalline structure, and iii) a metal oxide layer located on the magnetic layer.

7. 发明公开

EP2287863A1 Magnetic tunnel junction device and method for manufacturing the same 有权
标题翻译： Vorrichtung mit magnetischemTunnelübergangund Verfahren zu ihrer Herstellung
公开(公告)号：EP2287863A1
公开(公告)日：2011-02-23
申请号：EP10162168.8
申请日：2010-05-06
申请人： Korea Institute of Science and Technology
发明人： Choi, Gyung-Min , Min, Byoung Chul , Shin, Kyung Ho
IPC分类号： H01F10/32 , H01F41/30
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/091 , G01R33/098 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/14 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/10 , Y10T428/115
摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A 100-x B x ) 100-y C y ; ii) an insulating layer disposed on the first magnetic layer; and iii) a second magnetic layer disposed on the insulating layer and including a compound having a chemical formula of (A 100-x B x ) 100-y C y . The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphized element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).
摘要翻译：磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。磁性隧道结装置包括：i）包含化学式为（A 100-x B x）100-y C y的化合物的第一磁性层; ii）设置在第一磁性层上的绝缘层; 以及iii）设置在所述绝缘层上并包括化学式为（A 100-x B x）100-y C y的化合物的第二磁性层。第一和第二磁性层具有垂直的磁各向异性，A和B分别是金属元素，C是选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素（HF）。

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