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    • 1. 发明授权
    • Generation of terahertz radiation in orientation-patterned semiconductors
    • 在定向图案化的半导体中产生太赫兹辐射
    • US07339718B1
    • 2008-03-04
    • US11357722
    • 2006-02-17
    • Konstantin L. VodopyanovYun-Shik LeeVladimir G. KozlovMartin M. Fejer
    • Konstantin L. VodopyanovYun-Shik LeeVladimir G. KozlovMartin M. Fejer
    • G02F1/35G02F2/02
    • G02F1/39G02F1/3558G02F2203/13
    • A method for generating THz radiation comprises illuminating a semiconductor crystal with an optical pulse train. The semiconductor crystal comprises alternating parallel crystal domains, with each domain having a crystal orientation inverted with respect to adjacent domains. The optical pulse train propagates substantially perpendicularly relative to domain boundaries in the semiconductor crystal. The THz radiation is generated from the optical pulse train by optical down-conversion mediated by the semiconductor crystal. Optical path lengths through the crystal domains at least in part determine a frequency of the generated THz radiation. THz generation efficiency may be enhanced by placing the semiconductor crystal within an external resonant cavity, by placing the semiconductor crystal within a laser cavity, or by placing the semiconductor crystal within an OPO cavity. The semiconductor crystal may comprise zinc-blende, III-V, or II-VI semiconductor.
    • 用于产生太赫兹辐射的方法包括用光脉冲串照射半导体晶体。 半导体晶体包括交替的平行晶体畴,每个畴具有相对于相邻畴反转的晶体取向。 光脉冲串相对于半导体晶体中的畴边界基本垂直地传播。 通过由半导体晶体介导的光学下变频从光脉冲串产生太赫兹辐射。 通过晶体域的光路长度至少部分地确定所产生的太赫兹辐射的频率。 通过将半导体晶体放置在激光腔内,或通过将半导体晶体放置在OPO腔内,可以将半导体晶体放置在外部谐振腔内来提高太赫兹发生效率。 半导体晶体可以包括闪锌矿,III-V或II-VI半导体。
    • 2. 发明授权
    • Terahertz tunable sources, spectrometers, and imaging systems
    • 太赫兹可调谐源,光谱仪和成像系统
    • US08035083B1
    • 2011-10-11
    • US12099043
    • 2008-04-07
    • Vladimir G. KozlovWalter C. Hurlbut
    • Vladimir G. KozlovWalter C. Hurlbut
    • G01J5/02H01S3/10
    • G01J3/108
    • A source of terahertz radiation at a fundamental terahertz frequency is tunable over a fundamental terahertz frequency range, and is coupled into a first waveguide. The first waveguide supports only a single transverse spatial mode within the fundamental terahertz frequency range. A solid-state frequency multiplier receives from the first waveguide the terahertz radiation and produces terahertz radiation at a harmonic terahertz frequency. A second waveguide receives the harmonic terahertz radiation. The tunable terahertz source can comprise a backward wave oscillator with output tunable over about 0.10-0.18 THz, 0.18-0.26 THz, or 0.2-0.37 THz. The frequency multiplier can comprises at least one varistor or Schottky diode, and can comprise a doubler, tripler, pair of doublers, doubler and tripler, or pair of triplers. The terahertz source can be incorporated into a terahertz spectrometer or a terahertz imaging system.
    • 基波太赫兹频率处的太赫兹辐射源可在基波太赫兹频率范围内调节,并耦合到第一波导中。 第一个波导在基波太赫兹频率范围内仅支持单个横向空间模式。 固态倍频器从第一波导接收太赫兹辐射并产生谐波太赫频率的太赫兹辐射。 第二个波导接收谐波太赫兹辐射。 可调谐太赫兹源可以包括反向波振荡器,其输出可调节在约0.10-0.18THz,0.18-0.26THz或0.2-0.37THz。 倍频器可以包括至少一个变阻器或肖特基二极管,并且可以包括倍增器,三倍,一对倍增器,倍增器和三通或三对三对。 太赫兹光源可并入太赫兹光谱仪或太赫兹成像系统。
    • 3. 发明申请
    • SINGLE-SHOT LASER ABLATION OF A METAL FILM ON A POLYMER MEMBRANE
    • 聚合物膜上金属膜的单发射激光吸收
    • US20140218796A1
    • 2014-08-07
    • US14086986
    • 2013-11-22
    • Vladimir G. Kozlov
    • Vladimir G. Kozlov
    • B23K26/00G02B5/30
    • G02B5/30B23K26/0624B23K26/361B23K26/40B23K26/57B23K2103/08B23K2103/12B23K2103/14B23K2103/172B23K2103/26B23K2103/50G02B5/3058
    • A method comprises spatially selectively irradiating in a predetermined pattern with an output beam of a laser system an interface between a polymer substrate and a metal film on the polymer substrate. The polymer substrate is substantially transparent to the output beam of the laser system; the metal film absorbs a substantial fraction of the output beam. Laser system output comprises a sequence of pulses. Beam size at the polymer/metal interface, pulse energy, and pulse duration are selected so that each pulse from the laser system that irradiates an area of the polymer/metal interface substantially completely removes by ablation the metal film from at least a portion of the irradiated area without substantially altering the surfaces or bulk of the polymer substrate and without leaving on the polymer substrate or on remaining areas of the metal film substantial residue of metal that resolidified after being melted by the laser irradiation.
    • 一种方法包括以预定图案空间选择性地照射激光系统的输出光束,聚合物基底和聚合物基底上的金属膜之间的界面。 聚合物基材对激光系统的输出光束基本上是透明的; 金属膜吸收输出光束的很大一部分。 激光系统输出包括脉冲序列。 选择聚合物/金属界面处的光束尺寸,脉冲能量和脉冲持续时间,使得来自照射聚合物/金属界面的区域的激光系统的每个脉冲基本上完全通过从金属膜的至少一部分 照射区域,而基本上不改变聚合物基材的表面或体积,并且不留在聚合物基材上或金属膜的剩余区域上,通过激光照射熔化后重新固化的金属残余物。
    • 4. 发明授权
    • Single-shot laser ablation of a metal film on a polymer membrane
    • 聚合物膜上金属膜的单次激光烧蚀
    • US08593727B2
    • 2013-11-26
    • US13093683
    • 2011-04-25
    • Vladimir G. Kozlov
    • Vladimir G. Kozlov
    • G02B5/30G02B27/28B23K26/00
    • B23K26/0063B23K26/0624B23K26/361B23K26/40B23K26/57B23K2103/08B23K2103/12B23K2103/14B23K2103/172B23K2103/26B23K2103/50G02B5/30G02B5/3058
    • A method comprises spatially selectively irradiating in a predetermined pattern with an output beam of a laser system an interface between a polymer substrate and a metal film on the polymer substrate. The polymer substrate is substantially transparent to the output beam of the laser system; the metal film absorbs a substantial fraction of the output beam. Laser system output comprises a sequence of pulses. Beam size at the polymer/metal interface, pulse energy, and pulse duration are selected so that each pulse from the laser system that irradiates an area of the polymer/metal interface substantially completely removes by ablation the metal film from at least a portion of the irradiated area without substantially altering the surfaces or bulk of the polymer substrate and without leaving on the polymer substrate or on remaining areas of the metal film substantial residue of metal that resolidified after being melted by the laser irradiation.
    • 一种方法包括以预定图案空间选择性地照射激光系统的输出光束,聚合物基底和聚合物基底上的金属膜之间的界面。 聚合物基材对激光系统的输出光束基本上是透明的; 金属膜吸收输出光束的很大一部分。 激光系统输出包括脉冲序列。 选择聚合物/金属界面处的光束尺寸,脉冲能量和脉冲持续时间,使得来自照射聚合物/金属界面的区域的激光系统的每个脉冲基本上完全通过从金属膜的至少一部分 照射区域,而基本上不改变聚合物基材的表面或体积,并且不留在聚合物基材上或金属膜的剩余区域上,通过激光照射熔化后重新固化的金属残余物。
    • 5. 发明申请
    • SINGLE-SHOT LASER ABLATION OF A METAL FILM ON A POLYMER MEMBRANE
    • 聚合物膜上金属膜的单发射激光吸收
    • US20120268817A1
    • 2012-10-25
    • US13093683
    • 2011-04-25
    • Vladimir G. Kozlov
    • Vladimir G. Kozlov
    • B29D7/01G02B5/30
    • B23K26/0063B23K26/0624B23K26/361B23K26/40B23K26/57B23K2103/08B23K2103/12B23K2103/14B23K2103/172B23K2103/26B23K2103/50G02B5/30G02B5/3058
    • A method comprises spatially selectively irradiating in a predetermined pattern with an output beam of a laser system an interface between a polymer substrate and a metal film on the polymer substrate. The polymer substrate is substantially transparent to the output beam of the laser system; the metal film absorbs a substantial fraction of the output beam. Laser system output comprises a sequence of pulses. Beam size at the polymer/metal interface, pulse energy, and pulse duration are selected so that each pulse from the laser system that irradiates an area of the polymer/metal interface substantially completely removes by ablation the metal film from at least a portion of the irradiated area without substantially altering the surfaces or bulk of the polymer substrate and without leaving on the polymer substrate or on remaining areas of the metal film substantial residue of metal that resolidified after being melted by the laser irradiation.
    • 一种方法包括以预定图案空间选择性地照射激光系统的输出光束,聚合物基底和聚合物基底上的金属膜之间的界面。 聚合物基材对激光系统的输出光束基本上是透明的; 金属膜吸收输出光束的很大一部分。 激光系统输出包括脉冲序列。 选择聚合物/金属界面处的光束尺寸,脉冲能量和脉冲持续时间,使得来自照射聚合物/金属界面的区域的激光系统的每个脉冲基本上完全通过从金属膜的至少一部分 照射区域,而基本上不改变聚合物基材的表面或体积,并且不留在聚合物基材上或金属膜的剩余区域上,通过激光照射熔化后重新固化的金属残余物。