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    • 1. 发明授权
    • Micromechanical capacitive acceleration sensor
    • 微机电容加速度传感器
    • US07343801B2
    • 2008-03-18
    • US10471296
    • 2002-03-07
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfred Weinacht
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfred Weinacht
    • G01P15/125
    • F16N11/08G01P15/125G01P15/18G01P2015/0831G01P2015/0834G01P2015/0845G01P2015/0857G01P2015/086
    • A micromechanical capacitive acceleration sensor is described for picking up the acceleration of an object in at least one direction. The sensor includes a frame structure (110), a sensor inertia mass (101) made of a wafer and movably mounted relative to the frame structure (110) about a rotation axis, and a capacitive pick-up unit (120) for producing at least one capacitive output signal representing the position of the sensor mass (101) relative to the frame structure (110). The sensor inertia mass (101) has a center of gravity which offset relative to the rotation axis in a direction perpendicularly to a wafer plane for measuring accelerations laterally to the wafer plane. The sensor mass (101) and the frame structure (110) are made monolithically of one single crystal silicon wafer. A cover section (112) forms a common connector plane (150) for the connection of capacitor electrodes (125,126). Torqueable elements (105) form an electrically conducting bearing device for the sensor mass (101).
    • 描述了一种微机电容加速度传感器,用于拾取至少一个方向的物体的加速度。 该传感器包括框架结构(110),由晶片制成的传感器惯性质量块(101),并围绕旋转轴线相对于框架结构(110)可移动地安装;以及电容式拾取单元(120) 表示传感器质量块(101)相对于框架结构(110)的位置的至少一个电容式输出信号。 传感器惯性质量(101)具有垂直于晶片平面的方向相对于旋转轴偏移的重心,用于测量横向于晶片平面的加速度。 传感器质量(101)和框架结构(110)由一个单晶硅晶片制成一体。 盖部分(112)形成用于连接电容器电极(125,126)的公共连接器平面(150)。 扭矩元件(105)形成用于传感器质量块(101)的导电轴承装置。
    • 2. 发明申请
    • Micromechanical capacitive acceleration sensor
    • 微机电容加速度传感器
    • US20060156818A1
    • 2006-07-20
    • US10471296
    • 2002-03-07
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfried Weinacht
    • Konrad KapserPeter KnittlUlrich PrechtelHelmut SeidelSebastian ToelgManfried Weinacht
    • G01P15/125
    • F16N11/08G01P15/125G01P15/18G01P2015/0831G01P2015/0834G01P2015/0845G01P2015/0857G01P2015/086
    • A micromechanical capacitive acceleration sensor is described for picking up the acceleration of an object in at least one direction. The sensor includes a frame structure (110), a sensor inertia mass (101) made of a wafer and movably mounted relative to the frame structure (110) about a rotation axis, and a capacitive pick-up unit (120) for producing at least one capacitive output signal representing the position of the sensor mass (101) relative to the frame structure (110). The sensor inertia mass (101) has a center of gravity which offset relative to the rotation axis in a direction perpendicularly to a wafer plane for measuring accelerations laterally to the wafer plane. The sensor mass (101) and the frame structure (110) are made monolithically of one single crystal silicon wafer. A cover section (112) forms a common connector plane (150) for the connection of capacitor electrodes (125,126). Torqueable elements (105) form an electrically conducting bearing device for the sensor mass (101).
    • 描述了一种微机电容加速度传感器,用于拾取至少一个方向的物体的加速度。 该传感器包括框架结构(110),由晶片制成的传感器惯性质量块(101),并围绕旋转轴线相对于框架结构(110)可移动地安装;以及电容式拾取单元(120) 表示传感器质量块(101)相对于框架结构(110)的位置的至少一个电容式输出信号。 传感器惯性质量(101)具有垂直于晶片平面的方向相对于旋转轴偏移的重心,用于测量横向于晶片平面的加速度。 传感器质量(101)和框架结构(110)由一个单晶硅晶片制成一体。 盖部分(112)形成用于连接电容器电极(125,126)的公共连接器平面(150)。 扭矩元件(105)形成用于传感器质量块(101)的导电轴承装置。