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    • 1. 发明申请
    • BIOSENSOR WITH EVANESCENT WAVEGUIDE AND INTEGRATED SENSOR
    • 生物传感器与历史波形和集成传感器
    • WO2008096296A1
    • 2008-08-14
    • PCT/IB2008/050355
    • 2008-01-31
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.WIMBERGER- FRIEDL, ReinholdYOUNG, Nigel, D.VAN DER ZAAG, Pieter, J.
    • WIMBERGER- FRIEDL, ReinholdYOUNG, Nigel, D.VAN DER ZAAG, Pieter, J.
    • G01N21/64
    • G01N21/648G01N21/6454G01N21/7703
    • the present invention is directed to a waveguide sensor as well as to an evanescent field induced evanescent field induced sensor systemfor use in diagnostic applications that comprises a housingand an integrated waveguide sensor comprising: a waveguide layer, -capture compounds applied on the upper surface of said waveguide layer for 5 specific bonding to target substances, -a cladding layer contacting arranged on the lower surface of said waveguide layer, -a filter which is transmitting for luminescent radiation while absorbs and/or reflects radiation of excitation radiation, wherein the filter is arranged below the lower 10 surface of said cladding layer, at least one detector for sensing luminescent radiation, wherein the detector is arranged below the lower surface of said filter, a substrate that is connected with the detector and comprises the electrical interface of said detector; wherein 15 between the upper surface of the waveguide layerand along at least a lower surface section of the housing a channel is formed for receiving a fluidic probe; and the luminescent radiation is generated by luminescent tag bound to target substances as a result oftheir excitation by the evanescent field. This provides an improved sensitivity of the evanescent field induced sensor 20 system.
    • 本发明涉及一种波导传感器以及用于包括壳体和集成波导传感器的诊断应用中的用于诊断应用中的消逝场诱发的瞬逝场感应传感器系统,包括:波导层, - 施加在所述波导传感器的上表面上的捕获化合物 用于对目标物质进行5特异性结合的波导层, - 布置在所述波导层的下表面上的包层接触, - 在吸收和/或反射激发辐射的辐射的同时透射发光辐射的滤光器,其中所述滤光器被布置 在所述包覆层的下部10表面下方的至少一个用于感测发光辐射的检测器,其中所述检测器布置在所述滤光器的下表面下方,与所述检测器连接并包括所述检测器的电接口的基板; 其中在所述波导层的上表面和沿着所述壳体的至少下表面部分之间形成有15个用于接收流体探针的通道; 并且发光辐射是由作为其消逝场激发的结果的与目标物质结合的发光标签产生的。 这提供了渐逝场感应传感器20系统的改进的灵敏度。
    • 2. 发明申请
    • MANUFACTURE OF ELECTRONIC DEVICES COMPRISING THIN-FILM CIRCUIT ELEMENTS
    • 包含薄膜电路元件的电子器件的制造
    • WO2004019123A1
    • 2004-03-04
    • PCT/IB2003/003484
    • 2003-08-06
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.YOUNG, Nigel, D.
    • YOUNG, Nigel, D.
    • G02F1/1362
    • H01L27/1214H01L27/3269H01L2227/323
    • In the manufacture of an electronic device such as an active matrix display, a vertical amorphous PIN photodiode or similar thin-film diode (D) is advantageously integrated with a polysilicon TFT (TFT1, TFT2) in a manner that permits a good degree of optimisation of the respective TFT and diode properties while being compatible with the complex pixel context of the display. High temperature processes for making the active semiconductor film (10) of the TFT more crystalline than an active semiconductor film (40) of the diode and for forming the source and drain doped regions (s1,s2, d1,d2) of the TFT are carried out before depositing the active semiconductor film (40) of the diode. Thereafter. the lateral extent of the diode is defined by etching while protecting with an etch-stop film (30) an interconnection film (20) that can provide a doped bottom electrode region (41) of the diode as well as one of the doped regions (s2, g1) of the TFT.
    • 在诸如有源矩阵显示器的电子设备的制造中,垂直非晶PIN光电二极管或类似的薄膜二极管(D)有利地与多晶硅TFT(TFT1,TFT2)集成,以允许良好的优化程度 的TFT和二极管特性,同时与显示器的复杂像素上下文兼容。 用于使TFT的有源半导体膜(10)比二极管的有源半导体膜(40)更加结晶并且用于形成TFT的源极和漏极掺杂区域(s1,s2,d1,d2)的高温处理是 在淀积二极管的有源半导体膜(40)之前进行。 其后。 通过蚀刻限定二极管的横向范围,同时用蚀刻停止膜(30)保护互连膜(20),互连膜(20)可以提供二极管的掺杂底部电极区域(41)以及掺杂区域之一 s2,g1)。
    • 8. 发明申请
    • DISPLAY DEVICES USING AN ARRAY OF PROCESSING ELEMENTS AND DRIVING METHOD THEREOF
    • 使用加工元件阵列的显示装置及其驱动方法
    • WO2002095723A1
    • 2002-11-28
    • PCT/IB2002/001795
    • 2002-05-17
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.
    • EDWARDS, Martin, J.HUNTER, Ian, M.JOHNSON, Mark, T.YOUNG, Nigel, D.
    • G09G3/20
    • G09G3/20G09G3/2003G09G3/2085G09G3/2088G09G3/36G09G2300/0426G09G2300/08G09G2340/02G09G2340/0407
    • A display device, for example a liquid crystal display device (1), and driving method are provided that avoid the need to provide the display device with display data (e.g. video) containing individual display settings for each pixel. The display device comprises an array of pixels (21-36, 71a-79d, 121-136) and an array of processing elements (41-48, 71-79, 141-148), each processing element being associated with a respective pixel or group of pixels. The processing elements (41-48, 71-79, 141-148) perform processing of compressed input display data at pixel level. The processing elements (41-48, 71-79, 141-148) decompress the input data to determine individual pixel settings for their associated pixel or pixels. The processing elements (41-48, 71-79, 141-148) then drive the pixels (21-36, 71a-79d, 121-136) at the individual settings. A processing element may interpolate pixel settings from input data allocated to itself and one or more neighbouring processing elements. Alternatively, the processing elements may have knowledge of the pixel locations of pixels associated with it, and use this information to determine whether one or more of its pixels needs to be driven in response to common input data received by the plural processing elements.
    • 提供了一种显示装置,例如液晶显示装置(1)和驱动方法,其避免了为每个像素提供包含各个显示设置的显示数据(例如视频)的需要。 显示装置包括像素阵列(21-36,71a-79d,121-136)和处理元件阵列(41-48,71-79,141-148),每个处理元件与相应的像素 或一组像素。 处理元件(41-48,71-79,141-148)在像素级执行压缩输入显示数据的处理。 处理元件(41-48,71-79,141-148)解压缩输入数据以确定其相关像素或像素的各个像素设置。 处理元件(41-48,71-79,141-148)然后以各个设置驱动像素(21-36,71a-79d,121-136)。 处理元件可以从分配给自身和一个或多个相邻处理元件的输入数据内插像素设置。 或者,处理元件可以具有与其相关联的像素的像素位置的知识,并且使用该信息来确定是否需要响应于由多个处理元件接收的公共输入数据来驱动其中的一个或多个像素。