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1. 发明申请

WO2005064409A3 REMOVABLE PELLICLE FOR IMMERSION LITHOGRAPHY 审中-公开
公开(公告)号：WO2005064409A3
公开(公告)日：2005-07-14
申请号：PCT/IB2004/052886
申请日：2004-12-22
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , DIRKSEN, Peter , MORTON, Robert, D. , ZANDBERGEN, Peter , VAN STEENWINCKEL, David , AKSENOV, Yuri , LAMMERS, Jeroen, H. , VAN WINGERDEN, Johannes , MARINIER, Laurent
发明人： DIRKSEN, Peter , MORTON, Robert, D. , ZANDBERGEN, Peter , VAN STEENWINCKEL, David , AKSENOV, Yuri , LAMMERS, Jeroen, H. , VAN WINGERDEN, Johannes , MARINIER, Laurent
IPC分类号： G03F7/20
摘要： A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.

2. 发明申请

WO2002095498A2 LITHOGRAPHIC METHOD OF MANUFACTURING A DEVICE 审中-公开
标题翻译：制造设备的平面方法
公开(公告)号：WO2002095498A2
公开(公告)日：2002-11-28
申请号：PCT/IB2002/001733
申请日：2002-05-16
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , DIRKSEN, Peter , JUFFERMANS, Casparus, A., H. , VAN WINGERDEN, Johannes
发明人： DIRKSEN, Peter , JUFFERMANS, Casparus, A., H. , VAN WINGERDEN, Johannes
IPC分类号： G03F7/00
CPC分类号： H01L21/32139 , G03F1/26 , G03F1/36 , G03F7/0035
摘要： For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise "forbidden" structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.
摘要翻译：为了光刻制造具有非常高密度的器件，通过新的方法将设计掩模图案（120）分布在多个子图案（120a，120b，120c）上。子图案不包括“禁止”结构（135）并且可以通过常规设备传送到待图案化的基底层。为了传送，使用新的层叠层，其包括用于每个子图案的一对处理层（22; 26）和无机抗反射层（24; 28）。在第一处理层（26）已经被图案化为第一子图案之后，其被涂覆有用第二子图案曝光的新抗蚀剂层（30）和在第一子图案下方的第二处理层（22）用第二子图案处理处理层。

3. 发明申请

WO2004059394A3 DETERMINING LITHOGRAPHIC PARAMETERS TO OPTIMISE A PROCESS WINDOW 审中-公开
公开(公告)号：WO2004059394A3
公开(公告)日：2004-07-15
申请号：PCT/IB2003/006094
申请日：2003-12-18
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN WINGERDEN, Johannes , JUFFERMANS, Casparus, A., H. , DIRKSEN, Peter
发明人： VAN WINGERDEN, Johannes , JUFFERMANS, Casparus, A., H. , DIRKSEN, Peter
IPC分类号： G03F7/20
摘要： For determining best process variables (E, F, W) setting that provide optimum process window for a lithographic process for printing features having critical dimensions (CD) use is made of an overall performance characterizing parameter (C pk ) and of an analytical model, which describes CD data as a function of process parameters, like exposure dose (E) and focus( F). This allows calculating of the average value (µCD) and the variance (σCD) of the statistical CD distribution (CDd) and to determine the highest C pk value and the associated values of process parameters, which values provide the optimum process window.

4. 发明申请

WO2002089193A1 METHOD OF WET ETCHING A SILICON AND NITROGEN CONTAINING MATERIAL 审中-公开
标题翻译：湿蚀蚀含硅和含氮材料的方法
公开(公告)号：WO2002089193A1
公开(公告)日：2002-11-07
申请号：PCT/IB2002/001412
申请日：2002-04-18
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , KNOTTER, Dirk, M. , VAN WINGERDEN, Johannes , ROVERS, Madelon, G., J.
发明人： KNOTTER, Dirk, M. , VAN WINGERDEN, Johannes , ROVERS, Madelon, G., J.
IPC分类号： H01L21/311
CPC分类号： C09K13/08 , H01L21/0276 , H01L21/31111 , H01L21/67075 , H01L21/67086
摘要： The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.
摘要翻译：本发明涉及一种制造半导体器件的方法，包括通过用包含低浓度的氢氟酸的水溶液的湿蚀刻除去含硅和氮的材料的步骤，将该水溶液在升高的压力下施加以达到温度高于100℃

5. 发明申请

WO2002089192A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2002089192A1
公开(公告)日：2002-11-07
申请号：PCT/IB2002/001411
申请日：2002-04-18
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , KNOTTER, Dirk, M. , VAN WINGERDEN, Johannes , ROVERS, Madelon, G., J.
发明人： KNOTTER, Dirk, M. , VAN WINGERDEN, Johannes , ROVERS, Madelon, G., J.
IPC分类号： H01L21/311
CPC分类号： C09K13/08 , H01L21/0276 , H01L21/31111 , H01L21/67075 , H01L21/67086
摘要： The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate (1) with a layer of silicon (3) thereon, an inorganic anti-reflective layer (4) applied to the layer of silicon (3), and a resist mask (6) applied to the inorganic anti-reflective layer (4), which method comprises the steps of, patterning the inorganic anti-reflective layer (4) by means of the resist mask (6), patterning the layer of silicon (3), removing the resist mask (6), and removing the inorganic anti-reflective layer (4) by means of etching with an aqueous solution comprising hydrofluoric acid in a low concentration, which aqueous solution is applied at a high temperature.
摘要翻译：本发明涉及一种制造半导体器件的方法，包括：在其上设置硅层（3）的衬底（1），施加到硅层（3）的无机抗反射层（4）以及施加到无机抗反射层（4）上的抗蚀剂掩模（6），该方法包括以下步骤：通过抗蚀剂掩模（6）对无机抗反射层（4）进行图形化，硅（3），除去抗蚀剂掩模（6），并通过用低浓度的氢氟酸的水溶液进行蚀刻除去无机抗反射层（4），该水溶液在高温下被施加。

6. 发明授权

EP1700164B1 IRRADIATION METHOD 有权
标题翻译：光法
公开(公告)号：EP1700164B1
公开(公告)日：2010-08-04
申请号：EP04806612.0
申请日：2004-12-22
申请人： Koninklijke Philips Electronics N.V.
发明人： DIRKSEN, Peter , MORTON, Robert, D. , ZANDBERGEN, Peter , VAN STEENWINCKEL, David , AKSENOV, Yuri , LAMMERS, Jeroen, H. , VAN WINGERDEN, Johannes , MARINIER, Laurent
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , G03F7/70983
摘要： A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.

7. 发明公开

EP1386350A1 METHOD OF WET ETCHING AN INORGANIC ANTIREFLECTION LAYER 审中-公开
标题翻译： METHOD FOR A湿蚀刻无机防反射层
公开(公告)号：EP1386350A1
公开(公告)日：2004-02-04
申请号：EP02724538.0
申请日：2002-04-18
申请人： Koninklijke Philips Electronics N.V.
发明人： KNOTTER, Dirk, M. , VAN WINGERDEN, Johannes , ROVERS, Madelon, G., J.
IPC分类号： H01L21/311 , C09K13/04 , H01L21/027 , G03F7/09
CPC分类号： C09K13/08 , H01L21/0276 , H01L21/31111 , H01L21/67075 , H01L21/67086
摘要： The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate (1) with a layer of silicon (3) thereon, an inorganic anti-reflective layer (4) applied to the layer of silicon (3), and a resist mask (6) applied to the inorganic anti-reflective layer (4), which method comprises the steps of, patterning the inorganic anti-reflective layer (4) by means of the resist mask (6), patterning the layer of silicon (3), removing the resist mask (6), and removing the inorganic anti-reflective layer (4) by means of etching with an aqueous solution comprising hydrofluoric acid in a low concentration, which aqueous solution is applied at a high temperature.

8. 发明公开

EP1700164A2 REMOVABLE PELLICLE FOR IMMERSION LITHOGRAPHY 有权
标题翻译： BESTRAHLUNGSVERFAHREN
公开(公告)号：EP1700164A2
公开(公告)日：2006-09-13
申请号：EP04806612.0
申请日：2004-12-22
申请人： Koninklijke Philips Electronics N.V.
发明人： DIRKSEN, Peter , MORTON, Robert, D. , ZANDBERGEN, Peter , VAN STEENWINCKEL, David , AKSENOV, Yuri , LAMMERS, Jeroen, H. , VAN WINGERDEN, Johannes , MARINIER, Laurent
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , G03F7/70983
摘要： A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.
摘要翻译：一种照射方法来照射浸入流体（L3）中的抗蚀剂（L2）的感光层，包括施加可去除的透明层（L4，L5），通过浸没流体将辐射投射到抗蚀剂上，并通过透明使得流体中的缺陷如投射在表面上而失焦，然后移除透明层。透明层可以帮助将这种缺陷与辐射在表面上的焦点相距离，因此可以减少或消除阴影。因此，照射可以更完整，并且缺陷减少。特别是在浸液中的小气泡或颗粒形式的缺陷，特别是在流体/表面界面处的缺陷可能特别有效。辐射可以用于任何目的，包括检查，加工，图案化等。可以将透明层的去除与显影抗蚀剂层的步骤组合。

9. 发明公开

EP1395877A2 LITHOGRAPHIC METHOD OF MANUFACTURING A DEVICE 有权
标题翻译：平版印刷法制作元件
公开(公告)号：EP1395877A2
公开(公告)日：2004-03-10
申请号：EP02727930.6
申请日：2002-05-16
申请人： Koninklijke Philips Electronics N.V.
发明人： DIRKSEN, Peter , JUFFERMANS, Casparus, A., H. , VAN WINGERDEN, Johannes
IPC分类号： G03F7/00
CPC分类号： H01L21/32139 , G03F1/26 , G03F1/36 , G03F7/0035
摘要： For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise 'forbidden' structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.

10. 发明公开

EP1348233A1 METHOD OF DRY ETCHING AN ANTIREFLECTION COATING IN SEMICONDUCTOR DEVICES 审中-公开
标题翻译： PROCEDURE干蚀刻在半导体器件中的防反射膜
公开(公告)号：EP1348233A1
公开(公告)日：2003-10-01
申请号：EP01925571.0
申请日：2001-04-26
申请人： Koninklijke Philips Electronics N.V.
发明人： DE LAAT, Walterus, T., F., M. , VAN WINGERDEN, Johannes , MEIJER, Petrus, M.
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/32137 , H01L21/32139
摘要： The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate (1) having a dielectric layer (2) on this substrate (1), a conductive layer (3) on the dielectric layer (2), an inorganic anti-reflection coating (4) on the conductive layer (3), and a resist mask (6) on the inorganic anti-reflection coating (4). The method further comprises the following steps: patterning the inorganic anti-reflection coating (4) by means of the resist mask (6); patterning the conduc tive layer (3) by etching down to the dielectric layer (2); removing the resist mask (6); and removing the inorganic anti-reflection coating (4). According to the invention, the inorganic anti-reflection coating (4) is removed by means of a dry etch, using a polymerizing gas. It is achieved by this that no or hardly any changes in the critical dimension will occur.

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