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1. 发明申请

WO2003030214A3 METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT, INTEGRATED CIRCUIT OBTAINED IN ACCORDANCE WITH SAID METHOD, WAFER PROVIDED WITH AN INTEGRATED CIRCUIT OBTAINED IN ACCORDANCE WITH THE METHOD, AND SYSTEM COMPRISING AN INTEGRATED CIRCUIT OBTAINED BY MEANS OF THE METHOD 审中-公开
公开(公告)号：WO2003030214A3
公开(公告)日：2003-04-10
申请号：PCT/IB2002/003824
申请日：2002-09-17
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： VAN ARENDONK, Anton, P., M. , ROKS, Edwin , MIEROP, Adrianus, J.
IPC分类号： H01L23/58
摘要： The invention relates to a method of manufacturing an integrated circuit (404) on a die (402), wherein the die (402) forms a detachable part of a wafer (401) comprising a plurality of dies that are separated from each other by dicing lanes (403). The method comprises a step of applying a metallization pattern (407) in at least one of the dicing lanes (403) to form a communication bus comprising at least one communication bus circuit (405) that is part of the integrated circuit (404). Said step is followed by a step wherein the integrated circuit (404) is tested according to a predetermined testing method which uses the communication bus circuit (405) to communicate with the integrated circuit (404). This step is followed by a next step wherein the die (402) is detached from the wafer (401). The communication bus circuit (405) is designed so as to communicate in a wafer test mode as well as in a functional mode. During the testing of the integrated circuit (404), it communicates in the wafer test mode. The invention also relates to an integrated circuit (404) obtained by means of the manufacturing method, a wafer (401) comprising an integrated circuit (404) obtained by means of the manufacturing method, and a system comprising an integrated circuit (404) obtained by means of the manufacturing method.

2. 发明申请

WO2004021444A1 IMAGE SENSOR, CAMERA SYSTEM COMPRISING THE IMAGE SENSOR AND METHOD OF MANUFACTURING SUCH A DEVICE 审中-公开
标题翻译：图像传感器，包含图像传感器的摄像机系统及其制造方法
公开(公告)号：WO2004021444A1
公开(公告)日：2004-03-11
申请号：PCT/IB2003/003752
申请日：2003-07-31
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , FOLKERTS, Hein, O. , MAAS, Joris, P., V. , VERBUGT, Daniel, W., E. , LUKIYANOVA, Natalia, V. , HERMES, Daniel, H., J., M. , HOEKSTRA, Willem , MIEROP, Adrianus, J.
发明人： FOLKERTS, Hein, O. , MAAS, Joris, P., V. , VERBUGT, Daniel, W., E. , LUKIYANOVA, Natalia, V. , HERMES, Daniel, H., J., M. , HOEKSTRA, Willem , MIEROP, Adrianus, J.
IPC分类号： H01L27/146
CPC分类号： H01L27/14609
摘要： An image sensor (1) having a semiconductor body (2) with a first conductivity type and having a surface (3), the surface being provided with a number of cells (4), a cell comprising a photosensitive element (5) and a reset transistor (6), the reset transistor comprising a source region (7), a drain region (8) and a gate region (9), the source region (7) and the drain region (8) having a second conductivity type opposite to the first conductivity type, the source region (7) of the reset transistor (6) being electrically connected to the photosensitive element (5). There is a well region (10) present which well region extends from the surface (3) into the semiconductor body (2) and extends at least partly below the gate region (9) and the well region has a first conductivity type. The source region (7) extends at least substantially in a doped region (11) of the photosensitive element (5), the doped region (11) having a second conductivity type. The reduction of the source-well junction area reduced the number of white pixels and fixed pattern noise. In the method of manufacturing the image sensor, the well region (10) is positioned partly below the gate region (9) so that there is a distance (13) between the highly doped source region (7) and the well region (10). The distance (13) increases the depletion layer width between the source and well junction, so that tunnel currents no longer dominate the leakage currents and the related number of white pixels and fixed pattern noise are reduced.
摘要翻译：一种具有第一导电类型并具有表面（3）的半导体本体（2）的图像传感器（1），该表面设有多个单元（4），包括感光元件（5）和复位晶体管（6），复位晶体管包括源极区（7），漏极区（8）和栅极区（9），源极区（7）和漏极区（8）具有相反的第二导电类型到第一导电类型，复位晶体管（6）的源极区（7）电连接到感光元件（5）。存在井区域（10），阱区域从表面（3）延伸到半导体本体（2）中并且至少部分地延伸到栅极区域（9）的下方，并且阱区域具有第一导电类型。源极区域（7）至少基本上在感光元件（5）的掺杂区域（11）中延伸，掺杂区域（11）具有第二导电类型。源 - 阱结面积的减少减少了白色像素的数量和固定的图案噪声。在制造图像传感器的方法中，阱区域（10）部分地位于栅极区域（9）的下方，使得在高掺杂源极区域（7）和阱区域（10）之间存在距离（13）。距离（13）增加了源极和阱结之间的耗尽层宽度，使得隧道电流不再主导泄漏电流，并且相关数量的白色像素和固定模式噪声减小。

3. 发明公开

EP1537602A1 IMAGE SENSOR, CAMERA SYSTEM COMPRISING THE IMAGE SENSOR AND METHOD OF MANUFACTURING SUCH A DEVICE 有权
标题翻译：图像传感器与图像传感器相机系统
公开(公告)号：EP1537602A1
公开(公告)日：2005-06-08
申请号：EP03791132.8
申请日：2003-07-31
申请人： Koninklijke Philips Electronics N.V.
发明人： FOLKERTS, Hein, O. , MAAS, Joris, P., V. , VERBUGT, Daniel, W., E. , LUKIYANOVA, Natalia, V. , HERMES, Daniel, H., J., M. , HOEKSTRA, Willem , MIEROP, Adrianus, J.
IPC分类号： H01L27/146
CPC分类号： H01L27/14609
摘要： An image sensor (1) having a semiconductor body (2) with a first conductivity type and having a surface (3), the surface being provided with a number of cells (4), a cell comprising a photosensitive element (5) and a reset transistor (6), the reset transistor comprising a source region (7), a drain region (8) and a gate region (9), the source region (7) and the drain region (8) having a second conductivity type opposite to the first conductivity type, the source region (7) of the reset transistor (6) being electrically connected to the photosensitive element (5). There is a well region (10) present which well region extends from the surface (3) into the semiconductor body (2) and extends at least partly below the gate region (9) and the well region has a first conductivity type. The source region (7) extends at least substantially in a doped region (11) of the photosensitive element (5), the doped region (11) having a second conductivity type. The reduction of the source-well junction area reduced the number of white pixels and fixed pattern noise. In the method of manufacturing the image sensor, the well region (10) is positioned partly below the gate region (9) so that there is a distance (13) between the highly doped source region (7) and the well region (10). The distance (13) increases the depletion layer width between the source and well junction, so that tunnel currents no longer dominate the leakage currents and the related number of white pixels and fixed pattern noise are reduced.

4. 发明授权

EP1537602B1 IMAGE SENSOR, CAMERA SYSTEM COMPRISING THE IMAGE SENSOR 有权
标题翻译：图像传感器与图像传感器相机系统
公开(公告)号：EP1537602B1
公开(公告)日：2007-05-16
申请号：EP03791132.8
申请日：2003-07-31
申请人： Koninklijke Philips Electronics N.V.
发明人： FOLKERTS, Hein, O. , MAAS, Joris, P., V. , VERBUGT, Daniel, W., E. , LUKIYANOVA, Natalia, V. , HERMES, Daniel, H., J., M. , HOEKSTRA, Willem , MIEROP, Adrianus, J.
IPC分类号： H01L27/146
CPC分类号： H01L27/14609
摘要： An image sensor (1) having a semiconductor body (2) with a first conductivity type and having a surface (3), the surface being provided with a number of cells (4), a cell comprising a photosensitive element (5) and a reset transistor (6), the reset transistor comprising a source region (7), a drain region (8) and a gate region (9), the source region (7) and the drain region (8) having a second conductivity type opposite to the first conductivity type, the source region (7) of the reset transistor (6) being electrically connected to the photosensitive element (5). There is a well region (10) present which well region extends from the surface (3) into the semiconductor body (2) and extends at least partly below the gate region (9) and the well region has a first conductivity type. The source region (7) extends at least substantially in a doped region (11) of the photosensitive element (5), the doped region (11) having a second conductivity type. The reduction of the source-well junction area reduced the number of white pixels and fixed pattern noise. In the method of manufacturing the image sensor, the well region (10) is positioned partly below the gate region (9) so that there is a distance (13) between the highly doped source region (7) and the well region (10). The distance (13) increases the depletion layer width between the source and well junction, so that tunnel currents no longer dominate the leakage currents and the related number of white pixels and fixed pattern noise are reduced.

5. 发明公开

EP1466365A2 METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT, INTEGRATED CIRCUIT OBTAINED IN ACCORDANCE WITH SAID METHOD, WAFER PROVIDED WITH AN INTEGRATED CIRCUIT OBTAINED IN ACCORDANCE WITH THE METHOD, AND SYSTEM COMPRISING AN INTEGRATED CIRCUIT OBTAINED BY MEANS OF THE METHOD 审中-公开
标题翻译：方法制造集成电路，一个具有生产集成电路，用这种处理集成电路得到的晶片镜头本流程，系统包含与生产的集成电路这一过程
公开(公告)号：EP1466365A2
公开(公告)日：2004-10-13
申请号：EP02762722.3
申请日：2002-09-17
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN ARENDONK, Anton, P., M. , ROKS, Edwin , MIEROP, Adrianus, J.
IPC分类号： H01L23/58
CPC分类号： G01R31/318505 , G01R31/318511 , G01R31/3187
摘要： The invention relates to a method of manufacturing an integrated circuit (404) on a die (402), wherein the die (402) forms a detachable part of a wafer (401) comprising a plurality of dies that are separated from each other by dicing lanes (403). The method comprises a step of applying a metallization pattern (407) in at least one of the dicing lanes (403) to form a communication bus comprising at least one communication bus circuit (405) that is part of the integrated circuit (404). Said step is followed by a step wherein the integrated circuit (404) is tested according to a predetermined testing method which uses the communication bus circuit (405) to communicate with the integrated circuit (404). This step is followed by a next step wherein the die (402) is detached from the wafer (401). The communication bus circuit (405) is designed so as to communicate in a wafer test mode as well as in a functional mode. During the testing of the integrated circuit (404), it communicates in the wafer test mode. The invention also relates to an integrated circuit (404) obtained by means of the manufacturing method, a wafer (401) comprising an integrated circuit (404) obtained by means of the manufacturing method, and a system comprising an integrated circuit (404) obtained by means of the manufacturing method.

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