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1. 发明申请

WO2006048810A1 METHOD, OPTICAL RECORDING APPARATUS USING SUCH METHOD AND OPTICAL RECORDING MEDIUM FOR USE BY THE METHOD AND THE APPARATUS 审中-公开
标题翻译：方法，使用这种方法和光学记录介质的光学记录装置由方法和装置使用
公开(公告)号：WO2006048810A1
公开(公告)日：2006-05-11
申请号：PCT/IB2005/053539
申请日：2005-10-28
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN DER VLEUTEN, Maarten , SPRUIT, Johannes, H., M. , ADELERHOF, Derk, J. , VAN DORST, Petrus, A., M. , ELFRINK, Rene, J., G.
发明人： VAN DER VLEUTEN, Maarten , SPRUIT, Johannes, H., M. , ADELERHOF, Derk, J. , VAN DORST, Petrus, A., M. , ELFRINK, Rene, J., G.
IPC分类号： G11B7/006
CPC分类号： G11B7/0062
摘要： A method for setting an optimum value of a write power level for use in an optical recording apparatus for writing information on a recording layer (3) of an optical recording medium (1) by means of a radiation beam (5) is described. The recording layer is able to change between an amorphous and a crystalline state. The apparatus comprises a radiation source (4) for emitting the radiation beam (5) having a controllable value of a write power level (P W ) for recording information on the recording medium, a control unit (12) for recording a series of test patterns in a test area on the recording layer, each pattern being recorded with a different value of the write power level, a read unit (90) for reading the patterns and forming corresponding read signal portions, and first means (10, 101, 102) for deriving a value of a read parameter from at least one read signal portion and setting an optimum value (P opt ) of the write power level based on the values of this read parameter. According to the invention the apparatus further comprises second means to perform at least one initial step (40) of at least partly amorphizing and subsequently recrystallizing the recording layer. In this way a consistent result for the determined optimum value (P opt ) of the write power level (P w ) is obtained.
摘要翻译：描述了一种用于设置用于通过辐射束（5）在光学记录介质（1）的记录层（3）上写入信息的光学记录装置中的写入功率电平的最佳值的方法。记录层能够在无定形和结晶状态之间变化。该装置包括用于发射辐射束（5）的辐射源（4），其具有用于在记录介质上记录信息的写入功率电平（P SUB W＆lt; W）的可控值;控制单元），用于在记录层的测试区域中记录一系列测试图案，每个图案被记录有不同的写入功率电平值，用于读取图案并形成对应的读取信号部分的读取单元（90）和第一用于从至少一个读取信号部分导出读取参数的值并且基于写入功率电平的最佳值（P ）_{的装置（10,101,102），基于该读取参数的值。根据本发明，该装置还包括执行至少部分非晶化并随后使记录层再结晶的至少一个初始步骤（40）的第二装置。以这种方式，获得写入功率电平（P SUB）的所确定的最佳值（P ）的一致结果。}

2. 发明申请

WO2003077298A1 METHOD OF MANUFACTURING NANOWIRES AND AN ELECTRONIC DEVICE 审中-公开
标题翻译：制造纳米微粒和电子器件的方法
公开(公告)号：WO2003077298A1
公开(公告)日：2003-09-18
申请号：PCT/IB2003/000633
申请日：2003-02-18
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN DEN MEERAKKER, Johannes, E., A., M. , ELFRINK, Rene, J., G.
发明人： VAN DEN MEERAKKER, Johannes, E., A., M. , ELFRINK, Rene, J., G.
IPC分类号： H01L21/306
CPC分类号： H01L21/3063 , B82Y10/00 , H01L21/3086 , H01L29/0665 , H01L29/0673 , H01L29/0676
摘要： A method of manufacturing nanowires (104) is provided, according to which method the nanowires are prepared by etching a semiconductor substrate (10) in a direction substantially perpendicular to the surface of the semiconductor substrate (10). The etching is preceded by the provision of a pattern of isolated domains at the surface of semiconductor substrate (10). The resulting nanowires (104) are suitable for use in semiconductor devices.
摘要翻译：提供一种制造纳米线（104）的方法，根据该方法，通过在基本上垂直于半导体衬底（10）的表面的方向上蚀刻半导体衬底（10）来制备纳米线。之前的蚀刻之前是在半导体衬底（10）的表面处提供隔离畴的图案。所得的纳米线（104）适用于半导体器件。

3. 发明申请

WO2003010792A1 METHOD OF MEASURING THE PERFORMANCE OF A SCANNING ELECTRON MICROSCOPE 审中-公开
标题翻译：测量扫描电子显微镜性能的方法
公开(公告)号：WO2003010792A1
公开(公告)日：2003-02-06
申请号：PCT/IB2002/003025
申请日：2002-07-19
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , DIRKSEN, Peter , ELFRINK, Rene, J., G. , JUFFERMANS, Casparus, A., H.
发明人： DIRKSEN, Peter , ELFRINK, Rene, J., G. , JUFFERMANS, Casparus, A., H.
IPC分类号： H01J37/26
CPC分类号： H01J37/28 , H01J37/263 , H01J2237/2823
摘要： The performance of a scanning electron microscope (SEM) (10) is determined by scanning, with this SEM, porous silicon surface areas (PS F , PS C ) each having a different average pore size, calculating the Fourier transform spectra (F c ) of the images of the surface areas and extrapolating the resolution (R) at a zero signal-to-noise ratio (SNR) from the width (W(1/e)), the signal amplitude (Sa)and the noise offset (NL) of the spectra. A test sample provided with the different surface areas is obtained by anodizing a silicon substrate (Su) at a constant electric current, while continuously decreasing the substrate area exposed to the etching electrolyte (El).
摘要翻译：通过扫描测定扫描电子显微镜（SEM）（10）的性能，通过SEM扫描，各自具有不同平均孔径的多孔硅表面积（PSF，PSC），计算图像的傅立叶变换光谱（Fc）（W（1 / e）），信号幅度（Sa）和噪声偏移（NL）在零信噪比（SNR）下外推分辨率（R）光谱。通过以恒定的电流阳极氧化硅衬底（Su），同时连续地减小暴露于蚀刻电解质（E1）的衬底区域，获得具有不同表面积的测试样品。

4. 发明申请

WO2002059963A1 METHOD OF MANUFACTURING A DISPLAY DEVICE 审中-公开
标题翻译：制造显示装置的方法
公开(公告)号：WO2002059963A1
公开(公告)日：2002-08-01
申请号：PCT/IB2001/002688
申请日：2001-12-20
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： LIFKA, Herbert , ROOZEBOOM, Freddy , ELFRINK, Rene, J., G. , JOHNSON, Mark, T.
IPC分类号： H01L21/98
CPC分类号： G02F1/1362 , H01L25/50 , H01L27/15 , H01L27/32 , H01L2924/0002 , H01L2924/00
摘要： ICs (20) are nearly separated from the semiconductor substrate (10) on/in which they are formed. Subsequently, the substrate is positioned upside down on a substrate (carrier) (3) which is provided with glue (21) at the location of a crystal. After attachment of the crystal to the carrier, the semiconductor substrate is removed and the crystal remains attached to the carrier e.g. at the crossing of rows and columns. The separate crystals may contain TFTs (simple AM addressing) but also more complicated electronics (address of pixel in memory + identification).
摘要翻译： IC（20）在形成它们之后几乎与半导体衬底（10）分离。随后，将基板上下放置在在晶体位置处设置有胶水（21）的基板（载体）（3）上。在将晶体附着到载体之后，去除半导体衬底，并且晶体保持附着到载体上。在行和列的交叉处。单独的晶体可能包含TFT（简单的AM寻址），也可能是更复杂的电子元件（存储器中的像素地址+识别）。

5. 发明申请

WO2002059866A3 DISPLAY DEVICE 审中-公开
公开(公告)号：WO2002059866A3
公开(公告)日：2002-08-01
申请号：PCT/IB2001/002690
申请日：2001-12-20
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： LIFKA, Herbert , JOHNSON, Mark, T. , ROOZEBOOM, Freddy , ELFRINK, Rene, J., G.
IPC分类号： G09G3/36
摘要： ICs are attached to a carrier e.g. in a bus structure or at the crossing of rows and columns. The separate crystals may contain complicated electronics (address of pixel in memory + identification).

6. 发明公开

EP1358674A1 METHOD OF MANUFACTURING A DISPLAY DEVICE 审中-公开
标题翻译：用于生产DISPLAY元
公开(公告)号：EP1358674A1
公开(公告)日：2003-11-05
申请号：EP01273478.6
申请日：2001-12-20
申请人： Koninklijke Philips Electronics N.V.
发明人： LIFKA, Herbert , ROOZEBOOM, Freddy , ELFRINK, Rene, J., G. , JOHNSON, Mark, T.
IPC分类号： H01L21/98 , G02F1/1368 , H01L21/78
CPC分类号： G02F1/1362 , H01L25/50 , H01L27/15 , H01L27/32 , H01L2924/0002 , H01L2924/00
摘要： ICs (20) are nearly separated from the semiconductor substrate (10) on/in which they are formed. Subsequently, the substrate is positioned upside down on a substrate (carrier) (3) which is provided with glue (21) at the location of a crystal. After attachment of the crystal to the carrier, the semiconductor substrate is removed and the crystal remains attached to the carrier e.g. at the crossing of rows and columns. The separate crystals may contain TFTs (simple AM addressing) but also more complicated electronics (address of pixel in memory + identification).

7. 发明授权

EP1415320B1 METHOD OF MEASURING THE PERFORMANCE OF A SCANNING ELECTRON MICROSCOPE 有权
标题翻译：法测量的性能的扫描电子显微镜
公开(公告)号：EP1415320B1
公开(公告)日：2006-11-02
申请号：EP02751492.6
申请日：2002-07-19
申请人： Koninklijke Philips Electronics N.V.
发明人： DIRKSEN, Peter , ELFRINK, Rene, J., G. , JUFFERMANS, Casparus, A., H.
IPC分类号： H01J37/26 , H01L21/66
CPC分类号： H01J37/28 , H01J37/263 , H01J2237/2823
摘要： The performance of a scanning electron microscope (SEM) (10) is determined by scanning, with this SEM, porous silicon surface areas (PSF, PSC) each having a different average pore size, calculating the Fourier transform spectra (Fc) of the images of the surface areas and extrapolating the resolution (R) at a zero signal-to-noise ratio (SNR) from the width (W(1/e)), the signal amplitude (Sa)and the noise offset (NL) of the spectra. A test sample provided with the different surface areas is obtained by anodizing a silicon substrate (Su) at a constant electric current, while continuously decreasing the substrate area exposed to the etching electrolyte (El).

8. 发明公开

EP1810286A1 METHOD, OPTICAL RECORDING APPARATUS USING SUCH METHOD AND OPTICAL RECORDING MEDIUM FOR USE BY THE METHOD AND THE APPARATUS 审中-公开
标题翻译：法，用供的方法和装置这样的方法·光学记录媒体光学记录设备
公开(公告)号：EP1810286A1
公开(公告)日：2007-07-25
申请号：EP05797781.1
申请日：2005-10-28
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN DER VLEUTEN, Maarten , SPRUIT, Johannes, H., M. , ADELERHOF, Derk, J. , VAN DORST, Petrus, A., M. , ELFRINK, Rene, J., G.
IPC分类号： G11B7/006
CPC分类号： G11B7/0062
摘要： A method for setting an optimum value of a write power level for use in an optical recording apparatus for writing information on a recording layer (3) of an optical recording medium (1) by means of a radiation beam (5) is described. The recording layer is able to change between an amorphous and a crystalline state. The apparatus comprises a radiation source (4) for emitting the radiation beam (5) having a controllable value of a write power level (PW) for recording information on the recording medium, a control unit (12) for recording a series of test patterns in a test area on the recording layer, each pattern being recorded with a different value of the write power level, a read unit (90) for reading the patterns and forming corresponding read signal portions, and first means (10, 101, 102) for deriving a value of a read parameter from at least one read signal portion and setting an optimum value (Popt) of the write power level based on the values of this read parameter. According to the invention the apparatus further comprises second means to perform at least one initial step (40) of at least partly amorphizing and subsequently recrystallizing the recording layer. In this way a consistent result for the determined optimum value (Popt) of the write power level (Pw) is obtained.

9. 发明公开

EP1415320A1 METHOD OF MEASURING THE PERFORMANCE OF A SCANNING ELECTRON MICROSCOPE 有权
标题翻译：法测量的性能的扫描电子显微镜
公开(公告)号：EP1415320A1
公开(公告)日：2004-05-06
申请号：EP02751492.6
申请日：2002-07-19
申请人： Koninklijke Philips Electronics N.V.
发明人： DIRKSEN, Peter , ELFRINK, Rene, J., G. , JUFFERMANS, Casparus, A., H.
IPC分类号： H01J37/26 , H01L21/66
CPC分类号： H01J37/28 , H01J37/263 , H01J2237/2823
摘要： The performance of a scanning electron microscope (SEM) (10) is determined by scanning, with this SEM, porous silicon surface areas (PSF, PSC) each having a different average pore size, calculating the Fourier transform spectra (Fc) of the images of the surface areas and extrapolating the resolution (R) at a zero signal-to-noise ratio (SNR) from the width (W(1/e)), the signal amplitude (Sa)and the noise offset (NL) of the spectra. A test sample provided with the different surface areas is obtained by anodizing a silicon substrate (Su) at a constant electric current, while continuously decreasing the substrate area exposed to the etching electrolyte (El).

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