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1. 发明专利

JP2007318159A Bipolar transistor and method of manufacturing the same 审中-公开
标题翻译：双极晶体管及其制造方法
公开(公告)号：JP2007318159A
公开(公告)日：2007-12-06
申请号：JP2007174530
申请日：2007-07-02
申请人： Koninkl Philips Electronics Nv , コーニンクレッカフィリップスエレクトロニクスエヌヴィ
发明人： HUIZING HENDRIK G A , SLOTBOOM JAN W , LYUBOSHENKO IGOR , KLOOTWIJK JOHAN H , VAN RIJS FREERK , MELAI JOOST
IPC分类号： H01L21/331 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/165 , H01L29/737
CPC分类号： H01L29/7378 , H01L29/0821 , H01L29/7371
摘要： PROBLEM TO BE SOLVED: To provide a bipolar transistor, which is approached to a Johnson limit over a wide band. SOLUTION: The bipolar transistor comprises a collector region 1, an emitter region 2 and a base region 3, and a semiconductor area 4 extends between the collector region 1 and the base region 3. The collector region 1 is doped such that the semiconductor area 4 is fully depleted, and the magnitude of the intrinsic electric field in the semiconductor area 4 is at least substantially independent of the applied doping types and the doping concentration in the semiconductor area 4. The comparatively thin semiconductor area 4 between the base region 3 and the collector region 1, allows ultrafast bipolar transistors with a high cutoff frequency and an improved breakdown voltage to be manufactured. The product of the cutoff frequency and the collector-emitter breakdown voltage of these bipolar transistors exceeds the Johnson limit. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供在宽带上接近Johnson限制的双极晶体管。解决方案：双极晶体管包括集电极区域1，发射极区域2和基极区域3，并且半导体区域4在集电极区域1和基极区域3之间延伸。集电极区域1被掺杂，使得半导体区域4被完全耗尽，并且半导体区域4中的本征电场的幅度至少基本上与施加的掺杂类型和半导体区域4中的掺杂浓度无关。基极区域 3和集电极区域1，允许制造具有高截止频率和改进的击穿电压的超快双极晶体管。这些双极晶体管的截止频率和集电极 - 发射极击穿电压的乘积超过约翰逊限制。版权所有（C）2008，JPO＆INPIT

2. 发明授权

US6436785B2 Method of manufacturing semiconductor device with a tunnel diode 有权
标题翻译：制造具有隧道二极管的半导体器件的方法
公开(公告)号：US6436785B2
公开(公告)日：2002-08-20
申请号：US83272401
申请日：2001-04-11
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： BROWN ADAM R , HURKX GODEFRIDUS A M , DE BOER WIEBE B , SLOTBOOM JAN W
IPC分类号： H01L29/866 , H01L29/24 , H01L29/885 , H01L21/20
CPC分类号： H01L29/885 , Y10S438/979
摘要： A semiconductor device with a tunnel diode comprises two mutually adjoining semiconductor regions (2, 3) of opposed conductivity types having high enough doping concentrations to provide a tunneling junction. Portions (2A, 3A) of the semiconductor regions adjoining the junction comprise a mixed crystal of silicon and germanium. The doping concentration of both phosphorus and boron are substantially increased, given the same amount of dopants being offered as during the formation of the remainder of the regions. The tunneling efficiency is substantially improved, and also because of the reduced bandgap of said portions (2A, 3A). A much steeper current-voltage characteristic both in the forward and in the reverse direction is achieved. Thus, the tunneling pn junction can be used as a transition between two conventional diodes which are stacked one on the other and formed in a single epitaxial growing process. The doping concentration may be 6x1019 or even more than 1020 at/cm3. A simple method of manufacturing such a device is preferably done at a temperature between 550° C. and 800° C.
摘要翻译：具有隧道二极管的半导体器件包括具有足够高掺杂浓度的相对导电类型的两个相互邻接的半导体区域（2,3）以提供隧道结。邻接连接处的半导体区域的部分（2A，3A）包括硅和锗的混合晶体。给定与在其余区域形成期间相同量的掺杂剂，磷和硼的掺杂浓度显着增加。隧道效率显着提高，并且还因为所述部分（2A，3A）的带隙减小。实现了在正向和反向方向上更陡峭的电流 - 电压特性。因此，隧道pn结可以用作两个常规二极管之间的过渡，这两个二极管彼此堆叠并且以单个外延生长工艺形成。掺杂浓度可以为6×1019或甚至高于1020 at / cm3。制造这种器件的简单方法优选在550℃和800℃之间的温度下进行。

3. 发明申请

WO2006040720A3 CONTROLLING PARASITIC BIPOLAR GAIN IN A CMOS DEVICE 审中-公开
标题翻译：在CMOS器件中控制PARASITIC BIPOLAR GAIN
公开(公告)号：WO2006040720A3
公开(公告)日：2006-07-06
申请号：PCT/IB2005053308
申请日：2005-10-10
申请人： KONINKL PHILIPS ELECTRONICS NV , AGARWAL PRABHAT , SLOTBOOM JAN W
发明人： AGARWAL PRABHAT , SLOTBOOM JAN W
IPC分类号： H01L27/092 , H01L29/08
CPC分类号： H01L27/0921
摘要： A CMOS device comprising an n-channel MOS transistor (102) and a pchannel MOS transistor (100), defining a pair of parasitic bipolar transitors (110a, 110b) therebetween, wherein a layer (120) of doped SiGe is provided over the source region (106a) of at least one of the MOS transistors (100, 102), between the source region (106a) and the source contact (122). The layer (120) of material acts as a sink for minority carriers (holes in an N-type device) at the source, which has the effect of increasing surface recombination velocity (because the landgap of SiGe is lower than that of the Si substrate (104)), which, in turn, lowers the current gain of the respective parasitic bipolar device. As a result, the effects and/or occurrence of latch-up, and other breakdown instabilities associated with parasitic bipolar devices, can be limited.
摘要翻译：一种CMOS器件，包括n沟道MOS晶体管（102）和沟道MOS晶体管（100），其间限定了一对寄生双极性交变器（110a，110b），其中掺杂的SiGe层（120）设置在源极在所述源极区域（106a）和所述源极触点（122）之间的至少一个所述MOS晶体管（100,102）的区域（106a）。材料层（120）作为源极上的少数载流子（N型器件中的空穴）的吸收器，具有增加表面复合速度的作用（因为SiGe的边界低于Si衬底的边界（104）），这又降低了相应寄生双极器件的电流增益。结果，可以限制与寄生双极器件相关联的闩锁和其他击穿不稳定性的效果和/或发生。

4. 发明申请

WO2004102670A3 SEMICONDUCTOR DEVICE WITH A FIELD SHAPING REGION 审中-公开
标题翻译：具有场形成区域的半导体器件
公开(公告)号：WO2004102670A3
公开(公告)日：2005-01-20
申请号：PCT/IB2004001527
申请日：2004-05-06
申请人： KONINKL PHILIPS ELECTRONICS NV , HERINGA ANCO , HUETING RAYMOND J E , SLOTBOOM JAN W
发明人： HERINGA ANCO , HUETING RAYMOND J E , SLOTBOOM JAN W
IPC分类号： H01L29/06 , H01L29/40 , H01L29/73 , H01L29/732 , H01L29/78 , H01L29/861 , H01L29/41
CPC分类号： H01L29/402 , H01L29/0649 , H01L29/0653 , H01L29/408 , H01L29/73 , H01L29/732 , H01L29/7802 , H01L29/7813 , H01L29/7824 , H01L29/861
摘要： A semiconductor device, for example a diode (200), having a pn junction (101) has an insulating material field shaping region (201) adjacent, and possibly bridging, the pn junction. The field shaping region (201) preferably has a high dielectric constant and is coupled via capacitive voltage coupling regions (204,205) to substantially the same voltages as are applied to the pn junction. When a reverse voltage is applied across the pn junction (101) and the device is non-conducting, a capacitive electric field, is present in a part of the field shaping region which extends beyond a limit of the pn junction depletion region which would exist in the absence of the field shaping region (201), the electric field in the field shaping region inducing a stretched electric field limited to a correspondingly stretched pn junction depletion region (208,209) and an increased reverse breakdown voltage of the device.
摘要翻译：具有pn结（101）的半导体器件（例如二极管（200））具有与pn结相邻且可能桥接的绝缘材料场整形区域（201）。场成形区域（201）优选地具有高介电常数，并且经由电容性电压耦合区域（204,205）耦合到与施加到pn结的基本相同的电压。当在pn结（101）上施加反向电压并且器件不导通时，电容电场存在于场成形区域的一部分中，其延伸超过将存在的pn结耗尽区的极限在不存在场整形区域（201）的情况下，场成形区域中的电场引起限制到相应延伸的pn结耗尽区域（208,209）的拉伸电场和该器件的反向击穿电压的增加。

5. 发明专利

AU2003278414A1 RADIATION-EMITTING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE 未知
公开(公告)号：AU2003278414A1
公开(公告)日：2004-06-15
申请号：AU2003278414
申请日：2003-10-28
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： KLOOTWIJK JOHAN H , SLOTBOOM JAN W
IPC分类号： H01L29/73 , H01L33/00
摘要： The invention relates to a radiation-emitting semiconductor device ( 10 ) with a semiconductor body ( 1 ) and a substrate ( 2 ), wherein the semiconductor body ( 1 ) comprises a vertical bipolar transistor with an emitter region ( 3 ), a base region ( 4 ) and a collector region ( 5 ), which regions are each provided with a connection region ( 6, 7, 8 ), and the border between the base region ( 4 ) and the collector region ( 5 ) forms a pn-junction and, in operation, at a reverse bias of the pn-junction or at a sufficiently large collector current, avalanche multiplication of charge carriers occurs whereby radiation is generated in the collector region ( 5 ). According to the invention, the collector region ( 5 ) has a thickness through which transmission of the generated radiation occurs, and the collector region ( 5 ) borders on a free surface of the semiconductor body ( 1 ).

6. 发明专利

AU2002348933A1 HETEROJUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH DEVICE 未知
公开(公告)号：AU2002348933A1
公开(公告)日：2003-06-10
申请号：AU2002348933
申请日：2002-11-21
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： SLOTBOOM JAN W , OEVER LEON C M VAN DEN , HUETING RAYMOND J E
IPC分类号： H01L21/331 , H01L27/07 , H01L29/417 , H01L29/423 , H01L29/47 , H01L29/737
摘要： The invention relates to a semiconductor device with a heterojunction bipolar, in particular npn, transistor with an emitter region ( 1 ), a base region ( 2 ), and a collector region ( 3 ), which are provided with respectively a first, a second, and a third connection conductor ( 4, 5, 6 ), while the bandgap of the base region ( 2 ) is lower than that of the collector region ( 3 ) or of the emitter region ( 1 ), for example owing to the use of a silicon-germanium alloy instead of pure silicon. Such a device is very fast, but its transistor shows a relatively low BVceo. In a device according to the invention, the emitter region ( 1 ) or the base region ( 2 ) comprises a sub-region ( 1 B, 2 B) with a reduced doping concentration, which sub-region ( 1 B, 2 B) is provided with a further connection conductor ( 4 B, 5 B) which forms a Schottky junction with the sub-region ( 1 B, 2 B). Such a device results in a transistor with a particularly high cut-off frequency fT but with no or hardly any reduction of the BVceo. In a preferred embodiment, the emitter region ( 1 ) and its sub-region ( 1 B), or the base region ( 2 ) and its sub-region ( 2 B) both border the surface of the semiconductor body ( 10 ) and the further connection conductor ( 4 B, 5 B) forms part of the first or the second connection conductor ( 4, 5 ), as applicable. The invention also comprises a method of manufacturing a device according to the invention.

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