专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07233003B2 Radiation detector 失效
标题翻译：辐射检测器
公开(公告)号：US07233003B2
公开(公告)日：2007-06-19
申请号：US10942846
申请日：2004-09-17
申请人： Koji Watadani , Kenji Sato , Yoichiro Shimura , Hideo Tsuruta
发明人： Koji Watadani , Kenji Sato , Yoichiro Shimura , Hideo Tsuruta
IPC分类号： G01T1/00
CPC分类号： H01L27/14676
摘要： The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 Å. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 Å or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.
摘要翻译：根据本发明的辐射检测器具有在对辐射敏感的非晶硒半导体膜（a-Se半导体膜）的表面上形成用于偏置电压的公共电极。公共电极是厚度在100至1000埃范围内的金薄膜。作为公共电极的金薄膜可以在相对低的气相沉积温度和减少的蒸镀时间形成在a-Se半导体膜的表面上。该特征抑制由于共用电极的形成而导致的a-Se半导体膜的缺陷的产生。用于公共电极的金薄膜不像现有技术那样厚，但为1000或更小。随着厚度减小，公共电极相对于a-Se半导体膜具有改善的粘合性能。

2. 发明申请

US20050061987A1 Radiation detector 失效
标题翻译：辐射检测器
公开(公告)号：US20050061987A1
公开(公告)日：2005-03-24
申请号：US10942846
申请日：2004-09-17
申请人： Koji Watadani , Kenji Sato , Yoichiro Shimura , Hideo Tsuruta
发明人： Koji Watadani , Kenji Sato , Yoichiro Shimura , Hideo Tsuruta
IPC分类号： G01T1/24 , A61B6/00 , G01J1/02 , H01L27/14 , H01L27/146 , H01L31/0224 , H01L31/08 , H01L31/09 , H01L31/115
CPC分类号： H01L27/14676
摘要： The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 Å. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 Å or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.
摘要翻译：根据本发明的辐射检测器具有在对辐射敏感的非晶硒半导体膜（a-Se半导体膜）的表面上形成用于偏置电压的公共电极。公共电极是厚度在100至1000埃范围内的金薄膜。作为公共电极的金薄膜可以在相对低的气相沉积温度和减少的蒸镀时间形成在a-Se半导体膜的表面上。该特征抑制由于共用电极的形成而导致的a-Se半导体膜的缺陷的产生。用于公共电极的金薄膜不像现有技术那样厚，但为1000或更小。随着厚度减小，公共电极相对于a-Se半导体膜具有改善的粘合性能。

3. 发明申请

US20090281071A1 THERAPEUTIC AGENT FOR HYPERTENSION 有权
标题翻译：高血压治疗药物
公开(公告)号：US20090281071A1
公开(公告)日：2009-11-12
申请号：US12064677
申请日：2006-08-28
申请人： Hideo Tsuruta
发明人： Hideo Tsuruta
IPC分类号： A61K31/57 , C07J7/00 , A61P9/12
CPC分类号： C07J5/00 , A61K31/573
摘要： The present invention provides a novel hypertension therapeutic agent.The hypertension therapeutic agent of the present invention contains, as an active ingredient, a compound represented by formula (1): or a pharmaceutically acceptable salt thereof.
摘要翻译：本发明提供一种新型高血压治疗剂。本发明的高血压治疗剂含有作为活性成分的式（1）表示的化合物或其药学上可接受的盐。

4. 发明授权

US09650408B2 Therapeutic agent for hypertension 有权
公开(公告)号：US09650408B2
公开(公告)日：2017-05-16
申请号：US12064677
申请日：2006-08-28
申请人： Hideo Tsuruta
发明人： Hideo Tsuruta
IPC分类号： A61K31/56 , A61K31/573 , C07J5/00
CPC分类号： C07J5/00 , A61K31/573
摘要： The present invention provides a novel hypertension therapeutic agent.The hypertension therapeutic agent of the present invention contains, as an active ingredient, a compound represented by formula (1):[F1] or a pharmaceutically acceptable salt thereof.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式