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    • 3. 发明申请
    • Method of Manufacturing Semiconductor Device
    • 制造半导体器件的方法
    • US20080038921A1
    • 2008-02-14
    • US10598372
    • 2005-03-15
    • Kazuo GoudaKoji TsujiMasao KiriharaYouichi Nishijima
    • Kazuo GoudaKoji TsujiMasao KiriharaYouichi Nishijima
    • H01L21/306
    • B81C1/00142B81B2201/0242B81B2203/0136B81B2203/0353
    • A method of manufacturing a semiconductor device. In this method, a concave portion is formed in one surface in the thickness direction of a primary base plate comprising a semiconductor substrate with a relatively large thickness dimension. Then, through-holes are formed by a reactive-ion etching process using as a mask an opening formed in an oxide film provided on the other surface in the thickness direction of the primary base plate. The opening has a narrow width in a region corresponding to the concave portion and a wide width in the remaining region. Thus, respective times necessary for the wide-width through-hole to penetrate through the primary base plate and necessary for the narrow-width through-hole to reach a bottom surface of the concave portion can be approximately equalized to complete the common etching process of the wide-width through-hole and the narrow-width through-hole approximately simultaneously.
    • 一种制造半导体器件的方法。 在该方法中,在包括具有相对较大的厚度尺寸的半导体衬底的初级基板的厚度方向的一个表面上形成凹部。 然后,通过反应离子蚀刻工艺形成通孔,该方法使用在主基板的厚度方向上设置在另一个表面上的氧化膜中形成的开口作为掩模。 开口部在与凹部对应的区域中宽度窄,其余区域宽。 因此,宽度通孔贯穿初级基板所需的各个时间和窄通孔所需的到达凹部的底面的时间可以近似相等,以完成普通的蚀刻工艺 大孔同时宽通孔和窄通孔。
    • 5. 发明授权
    • Gyro sensor and sensor apparatus using same
    • 陀螺传感器和传感器装置使用相同
    • US07484410B2
    • 2009-02-03
    • US10598333
    • 2005-03-14
    • Koji TsujiKazuo GoudaMasao KiriharaYouichi NishijimaSatoshi Hyodo
    • Koji TsujiKazuo GoudaMasao KiriharaYouichi NishijimaSatoshi Hyodo
    • G01C19/56G01P9/04
    • G01C19/5719
    • Disclosed is a gyro sensor, which comprises a primary base plate (1) and a support base plate (2) which are superimposed on one another. The primary base plate (1) is provided with a driven mass body (11) to be driven in such a manner as to be vibrated in a direction intersecting with a surface of the support base plate (2), and a detection mass body (12) coupled with the driven mass body (11) through a drive spring (13) and adapted to be displaceable in a plane along the support base plate (2). Two detection springs (15) extending in the arranging direction of the driven mass body (11) and the detection mass body (12) are connected, respectively, to opposite side of the detection mass body (12), and the other ends of the detection springs (15) are connected together through a coupling segment (16). A fixing segment (17) provided at a longitudinally intermediate portion of the coupling segment (16) is fixed to the support base plate (2). A member formed by integrating the driven mass body (11) and the detection mass body (12) through the drive spring (13) is supported relative to the support base plate (2) by the detection springs (15) in a cantilever manner.
    • 公开了一种陀螺传感器,其包括彼此重叠的主基板(1)和支撑基板(2)。 主基板(1)设置有驱动质量体(11),其被驱动以便在与支撑基板(2)的表面相交的方向上振动,并且检测质量体( 12),其通过驱动弹簧(13)与被驱动质量体(11)联接并且适于沿着支撑基板(2)在平面中移位。 沿被驱动质量体(11)和检测质量体(12)的排列方向延伸的两个检测弹簧(15)分别连接到检测质量体(12)的相对侧,另一端 检测弹簧(15)通过联接段(16)连接在一起。 设置在联接段(16)的纵向中间部分的固定段(17)固定到支撑基板(2)上。 通过驱动弹簧(13)将被驱动质量体(11)和检测质量体(12)集成形成的部件通过检测弹簧(15)以悬臂方式相对于支撑基板(2)支撑。
    • 6. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US07592263B2
    • 2009-09-22
    • US10598372
    • 2005-03-15
    • Kazuo GoudaKoji TsujiMasao KiriharaYouichi Nishijima
    • Kazuo GoudaKoji TsujiMasao KiriharaYouichi Nishijima
    • H01L21/302
    • B81C1/00142B81B2201/0242B81B2203/0136B81B2203/0353
    • A method of manufacturing a semiconductor device. In this method, a concave portion is formed in one surface in the thickness direction of a primary base plate comprising a semiconductor substrate with a relatively large thickness dimension. Then, through-holes are formed by a reactive-ion etching process using as a mask an opening formed in an oxide film provided on the other surface in the thickness direction of the primary base plate. The opening has a narrow width in a region corresponding to the concave portion and a wide width in the remaining region. Thus, respective times necessary for the wide-width through-hole to penetrate through the primary base plate and necessary for the narrow-width through-hole to reach a bottom surface of the concave portion can be approximately equalized to complete the common etching process of the wide-width through-hole and the narrow-width through-hole approximately simultaneously.
    • 一种制造半导体器件的方法。 在该方法中,在包括具有相对较大的厚度尺寸的半导体衬底的初级基板的厚度方向的一个表面上形成凹部。 然后,通过反应离子蚀刻工艺形成通孔,该方法使用在主基板的厚度方向上设置在另一个表面上的氧化膜中形成的开口作为掩模。 开口部在与凹部对应的区域中宽度窄,其余区域宽。 因此,宽度通孔贯穿初级基板所需的各个时间和窄通孔所需的到达凹部的底面的时间可以近似相等,以完成普通的蚀刻工艺 大孔同时宽通孔和窄通孔。