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1. 发明授权

US07486344B2 Semiconductor display device and manufacturing method thereof 有权
标题翻译：半导体显示装置及其制造方法
公开(公告)号：US07486344B2
公开(公告)日：2009-02-03
申请号：US11679936
申请日：2007-02-28
申请人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： G02F1/136
CPC分类号： H01L27/1214 , G02F1/13454 , G02F1/1368 , H01L27/124 , H01L27/127
摘要： A highly reliable semiconductor display device is provided. The semiconductor display device has a channel forming region, an LDD region, and a source region and a drain region in a semiconductor layer, and the LDD region overlaps with a first gate electrode, sandwiching a gate insulating film.
摘要翻译：提供了高度可靠的半导体显示装置。半导体显示装置在半导体层中具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

2. 发明授权

US06646287B1 Semiconductor device with tapered gate and insulating film 有权
标题翻译：具有锥形栅极和绝缘膜的半导体器件
公开(公告)号：US06646287B1
公开(公告)日：2003-11-11
申请号：US09714891
申请日：2000-11-17
申请人： Koji Ono , Hideomi Suzawa , Tatsuya Arao
发明人： Koji Ono , Hideomi Suzawa , Tatsuya Arao
IPC分类号： H01L29786
CPC分类号： H01L27/1222 , G02F1/13624 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L33/08 , H01L33/62 , H01L2029/7863 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.
摘要翻译：在半导体器件（通常为有源矩阵显示器件）中，根据电路的功能，布置在各个电路中的TFT的结构是合适的，并且随着半导体器件的工作特性和可靠性的提高，制造降低成本，并通过减少工艺步骤的数量来提高产量。半导体器件具有半导体层，与半导体层接触形成的绝缘膜和在绝缘膜上具有锥形部分的栅电极，在半导体器件中，半导体层具有沟道形成区，形成第一杂质区源极区域或漏极区域，并且包含单一导电型杂质元素，以及用于形成与沟道形成区域接触的LDD区域的第二杂质区域，第二杂质区域的一部分与栅电极重叠，并且浓度包含在第二杂质区域中的单一导电型杂质元素随着与沟道形成区域的距离而变大。

3. 发明授权

US08772778B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08772778B2
公开(公告)日：2014-07-08
申请号：US13396717
申请日：2012-02-15
申请人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L2029/7863
摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
摘要翻译：提供了一种高可靠性的半导体显示装置。半导体显示装置中的半导体层具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

4. 发明授权

US08470647B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08470647B2
公开(公告)日：2013-06-25
申请号：US11620576
申请日：2007-01-05
申请人： Hideomi Suzawa , Koji Ono , Toru Takayama , Tatsuya Arao , Shunpei Yamazaki
发明人： Hideomi Suzawa , Koji Ono , Toru Takayama , Tatsuya Arao , Shunpei Yamazaki
IPC分类号： H01L21/84
CPC分类号： H01L27/124 , H01L21/32136 , H01L27/1214 , H01L27/127 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78684 , H01L2029/7863
摘要： There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24, 25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.
摘要翻译：当形成具有LDD结构的TFT或具有GOLD结构的TFT时，存在制造过程复杂并且处理次数增加的问题。在制造半导体器件的方法中，在第二掺杂工艺中形成低浓度杂质区（24,25）之后，与第三电极（18c）重叠的低浓度杂质区的宽度和不与第三电极重叠的低浓度杂质区域可以通过第四蚀刻工艺自由地控制。因此，在与第三电极重叠的区域中，实现电场浓度的松弛，然后可以防止热载流子注入。并且，在不与第三电极重叠的区域中，可以抑制截止电流值。

5. 发明申请

US20120205671A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120205671A1
公开(公告)日：2012-08-16
申请号：US13396717
申请日：2012-02-15
申请人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： H01L27/15 , H01L29/78
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L2029/7863
摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
摘要翻译：提供了一种高可靠性的半导体显示装置。半导体显示装置中的半导体层具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

6. 发明授权

US08124973B2 Electronic appliance including transistor having LDD region 有权
标题翻译：电子设备包括具有LDD区域的晶体管
公开(公告)号：US08124973B2
公开(公告)日：2012-02-28
申请号：US11469768
申请日：2006-09-01
申请人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L2029/7863
摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
摘要翻译：提供了一种高可靠性的半导体显示装置。半导体显示装置中的半导体层具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

7. 发明授权

US06933184B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06933184B2
公开(公告)日：2005-08-23
申请号：US10622584
申请日：2003-07-21
申请人： Tatsuya Arao , Hideomi Suzawa , Koji Ono , Toru Takayama
发明人： Tatsuya Arao , Hideomi Suzawa , Koji Ono , Toru Takayama
IPC分类号： H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/786
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： Conventionally, when a TFT provided with an LDD structure or a TFT provided with a GOLD structure is to be formed, there is a problem in that the manufacturing process becomes complicated, which leads to the increase in the number of steps. An electrode formed of a lamination of a first conductive layer (18b) and a second conductive layer (17c), which have different widths from each other, is formed. After the first conductive layer (18b) is selectively etched to form a first conductive layer (18c), a low concentration impurity region (25a) overlapping the first conductive layer (18c) and a low concentration impurity region (25b) not overlapping the first conductive layer 18c are formed by doping an impurity element at a low concentration.
摘要翻译：通常，当形成设置有LDD结构的TFT或具有GOLD结构的TFT时，存在制造过程变得复杂的问题，导致步骤数增加。形成由彼此具有不同宽度的第一导电层（18b）和第二导电层（17c）的叠层形成的电极。在选择性蚀刻第一导电层（18b）以形成第一导电层（18c）之后，与第一导电层（18c）和低浓度杂质区域（25b）重叠的低浓度杂质区域（25a））不是通过以低浓度掺杂杂质元素形成第一导电层18c。

8. 发明授权

US06759678B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06759678B2
公开(公告)日：2004-07-06
申请号：US09797186
申请日：2001-03-02
申请人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： H01L2904
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L2029/7863
摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
摘要翻译：提供了一种高可靠性的半导体显示装置。半导体显示装置中的半导体层具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

9. 发明授权

US07560734B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07560734B2
公开(公告)日：2009-07-14
申请号：US11305212
申请日：2005-12-19
申请人： Koji Ono , Hideomi Suzawa , Tatsuya Arao
发明人： Koji Ono , Hideomi Suzawa , Tatsuya Arao
IPC分类号： H01L27/14
CPC分类号： H01L27/1222 , G02F1/13624 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L33/08 , H01L33/62 , H01L2029/7863 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.
摘要翻译：在半导体器件（通常为有源矩阵显示器件）中，根据电路的功能，布置在各个电路中的TFT的结构是合适的，并且随着半导体器件的工作特性和可靠性的提高，制造降低成本，并通过减少工艺步骤的数量来提高产量。半导体器件具有半导体层，与半导体层接触形成的绝缘膜和在绝缘膜上具有锥形部分的栅电极，在半导体器件中，半导体层具有沟道形成区，形成第一杂质区源极区域或漏极区域，并且包含单一导电型杂质元素，以及用于形成与沟道形成区域接触的LDD区域的第二杂质区域，第二杂质区域的一部分与栅电极重叠，并且浓度包含在第二杂质区域中的单一导电型杂质元素随着与沟道形成区域的距离而变大。

10. 发明申请

US20070246777A1 ELECTRONIC APPLIANCE INCLUDING TRANSISTOR HAVING LDD REGION 有权
标题翻译：包含LDD区域的晶体管的电子器件
公开(公告)号：US20070246777A1
公开(公告)日：2007-10-25
申请号：US11469768
申请日：2006-09-01
申请人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： H01L27/12
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L2029/7863
摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
摘要翻译：提供了一种高可靠性的半导体显示装置。半导体显示装置中的半导体层具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

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