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1. 发明授权

US06890791B2 Compound semiconductor substrates and method of fabrication 失效
标题翻译：复合半导体衬底及其制造方法
公开(公告)号：US06890791B2
公开(公告)日：2005-05-10
申请号：US10813488
申请日：2004-03-30
申请人： Koji Ohtsuka , Junji Sato , Tetsuji Moku , Masahiro Sato
发明人： Koji Ohtsuka , Junji Sato , Tetsuji Moku , Masahiro Sato
IPC分类号： H01L21/331 , H01L21/20 , H01L21/205 , H01L21/338 , H01L29/737 , H01L29/778 , H01L29/812 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01L33/34 , H01L21/00
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L33/007
摘要： A semiconductor substrate for a light-emitting diode, heterojunction transistor or the like. Included is a buffer region of an aluminum-containing nitride or the like grown epitaxially on a baseplate of silicon or a silicon compound. A dislocation-refracting region of an indium-containing nitride is grown epitaxially on the buffer region in order to provide a major surface having a multiplicity of protuberances of pyramidal shape capable of refracting the dislocations created in the buffer region. A leveling region of a nitride, not containing indium, is formed on the major surface of the dislocation refracting region in order to provide a major surface of greater levelness than the transition refracting region. The leveling region is reduced in dislocation density owing to the interposition of the dislocation refracting region between buffer region and leveling region.
摘要翻译：用于发光二极管的半导体衬底，异质结晶体管等。包括在硅或硅化合物的基板上外延生长的含铝氮化物等的缓冲区。含铟氮化物的位错折射区域在缓冲区域外延生长，以便提供具有能够折射在缓冲区域中产生的位错的多个锥体形状的突起的主表面。在位错折射区域的主表面上形成不含铟的氮化物的调平区域，以提供比过渡折射区域更大的水平度的主表面。由于在缓冲区域和调平区域之间插入位错折射区域，因此位移密度降低。

2. 发明授权

US07176480B2 Light-emitting semiconductor device having a quantum well active layer, and method of fabrication 有权
标题翻译：具有量子阱活性层的发光半导体器件及其制造方法
公开(公告)号：US07176480B2
公开(公告)日：2007-02-13
申请号：US11122620
申请日：2005-05-05
申请人： Koji Ohtsuka , Junji Sato , Tetsuji Moku , Yoshitaka Tanaka , Mikio Tajima
发明人： Koji Ohtsuka , Junji Sato , Tetsuji Moku , Yoshitaka Tanaka , Mikio Tajima
IPC分类号： H01L29/06
CPC分类号： H01L33/007 , H01L33/06
摘要： A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration, and a p-type upper confining layer. The active layer is constituted of cyclic alternations of a barrier sublayer of InGaN, a first complementary sublayer of AlGaInN, a well sublayer of InGaN, and a second complementary sublayer of AlGaInN. The proportions of the noted ingredients of the active sublayers are all specified. The first and the second complementary sublayers prevent the evaporation or diffusion of indium from the neighboring sublayers.
摘要翻译：发光二极管具有低电阻率硅衬底，其上层叠有缓冲层，n型下约束层，多量子阱构造的有源层和p型上约束层。有源层由InGaN的势垒子层，AlGaInN的第一互补子层，InGaN的阱子层和AlGaInN的第二互补子层的循环变化构成。活性亚层的所述成分的比例都被指定。第一和第二互补子层防止铟从相邻子层的蒸发或扩散。

3. 发明申请

US20050191778A1 Light-emitting semiconductor device having a quantum well active layer, and method of fabrication 有权
标题翻译：具有量子阱活性层的发光半导体器件及其制造方法
公开(公告)号：US20050191778A1
公开(公告)日：2005-09-01
申请号：US11122620
申请日：2005-05-05
申请人： Koji Ohtsuka , Junji Sato , Tetsuji Moku , Yoshitaka Tanaka , Mikio Tajima
发明人： Koji Ohtsuka , Junji Sato , Tetsuji Moku , Yoshitaka Tanaka , Mikio Tajima
IPC分类号： H01L33/00 , H01L33/06 , H01L21/00
CPC分类号： H01L33/007 , H01L33/06
摘要： A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration, and a p-type upper confining layer. The active layer is constituted of cyclic alternations of a barrier sublayer of InGaN, a first complementary sublayer of AlGaInN, a well sublayer of InGaN, and a second complementary sublayer of AlGaInN. The proportions of the noted ingredients of the active sublayers are all specified. The first and the second complementary sublayers prevent the evaporation or diffusion of indium from the neighboring sublayers.
摘要翻译：发光二极管具有低电阻率硅衬底，其上层叠缓冲层，n型下约束层，多量子阱构造的有源层和p型上约束层。有源层由InGaN的势垒子层，AlGaInN的第一互补子层，InGaN的阱子层和AlGaInN的第二互补子层的循环变化构成。活性亚层的所述成分的比例都被指定。第一和第二互补子层防止铟从相邻子层的蒸发或扩散。

4. 发明授权

US5814838A Light emitting semiconductor element with ZN doping 失效
标题翻译：具有ZN掺杂的发光半导体元件
公开(公告)号：US5814838A
公开(公告)日：1998-09-29
申请号：US856946
申请日：1997-05-15
申请人： Koji Ohtsuka , Hitoshi Murofushi , Emiko Chino , Tetsuji Moku
发明人： Koji Ohtsuka , Hitoshi Murofushi , Emiko Chino , Tetsuji Moku
IPC分类号： H01L33/12 , H01L33/14 , H01L33/30 , H01L33/36 , H01L33/00
CPC分类号： H01L33/30 , H01L33/025 , H01L33/305
摘要： An LED is disclosed which has a laminated semiconductor body with an anode and a cathode formed on a pair of opposite faces thereof. Among the layers of the semiconductor body are an active layer of AlGaInP semiconductor material, an n type cladding layer of either n type AlGaInP or n type AlInP semiconductor material on one side of the active layer, and a p type cladding layer of p type AlGaInP or p type AlInP semiconductor material on another side of the active layer. Unlike the conventional belief that the active layer should be as free as possible from the infiltration of Zn used in the p type cladding layer as an impurity to determine its p conductivity type, and hence as high in crystallinity as possible, Zn is positively doped into the active layer with a concentration of 1.times.10.sup.16 -5.times.10.sup.17 cm.sup.-3.
摘要翻译：公开了一种LED，其具有在其一对相对面上形成有阳极和阴极的层叠半导体本体。在半导体本体的层中，有源层为AlGaInP半导体材料，n型AlGaInP或n型AlInP半导体材料的n型包覆层在有源层的一侧，p型包层为p型AlGaInP或 p型AlInP半导体材料在有源层的另一侧。不同于以往的观点认为，活性层应尽可能不脱离作为杂质的p型包覆层中使用的Zn的渗透，以确定其p导电类型，因此尽可能高的结晶度，Zn被正掺杂浓度为1×10 16 -5×10 17 cm -3的活性层。

5. 发明授权

US5075740A High speed, high voltage schottky semiconductor device 失效
标题翻译：高速，高电压肖特基半导体器件
公开(公告)号：US5075740A
公开(公告)日：1991-12-24
申请号：US646880
申请日：1991-01-28
申请人： Koji Ohtsuka , Masahiro Sato
发明人： Koji Ohtsuka , Masahiro Sato
IPC分类号： H01L21/329 , H01L29/872
CPC分类号： H01L29/66212 , H01L29/872
摘要： A schottky diode is disclosed which has a barrier electrode formed on a semiconductor substrate for creating a schottky barrier therebetween. Also formed on the substrate is a first resistive region which surrounds the barrier electrode. The first resistive region is higher in sheet resistance than the barrier electrode and also capable of creating a schottky barrier at its interface with the semiconductor substrate. A second resistive region is formed on the first resistive region via an insulating layer and electrically connected to the barrier electrode. The sheet resistance of the second resistive region is less than that of the first resistive region. The first and second resistive regions function to improve the voltage blocking capability of the diode, particularly at the time of instantaneous transition from forward to reverse bias. There is also disclosed herein a method of most efficiently fabricating schottky semiconductor devices of the foregoing general construction.
摘要翻译：公开了一种肖特基二极管，其具有形成在半导体衬底上的阻挡电极，用于在其间形成肖特基势垒。也形成在衬底上的是围绕阻挡电极的第一电阻区域。第一电阻区的薄层电阻高于阻挡电极，并且还能够在其与半导体衬底的界面处产生肖特基势垒。第二电阻区域经由绝缘层形成在第一电阻区上并与阻挡电极电连接。第二电阻区域的薄层电阻小于第一电阻区域的薄层电阻。第一和第二电阻区域用于提高二极管的电压阻断能力，特别是在从正向转换到反向偏压的瞬时转换时。这里还公开了一种最有效地制造上述一般结构的肖特基半导体器件的方法。

6. 发明授权

US07780565B2 Differential device 有权
标题翻译：差分装置
公开(公告)号：US07780565B2
公开(公告)日：2010-08-24
申请号：US11823700
申请日：2007-06-27
申请人： Masaaki Fusegi , Koji Ohtsuka
发明人： Masaaki Fusegi , Koji Ohtsuka
IPC分类号： F16H48/06
CPC分类号： F16H48/30 , F16H48/08 , F16H48/24 , F16H48/34 , F16H48/40 , F16H2048/204 , F16H2048/346
摘要： A differential device for differentially distributing a driving force to axles along an axis is disclosed. The differential device has a case being capable of rotation about the axis, which includes a flange configured to receive the driving force and a shaft crossing the case perpendicularly to the axis; an opening defined by a peripheral border on an outer periphery of the case so as to allow access into the case, lateral extremities of which is deviated from a center of the shaft toward a direction opposite to the flange along the axis; and a differential gear set housed in and drivingly coupled to the case, the differential gear set including an input gear rotatable around the shaft and output gears so combined with the input gear as to differentially distribute the driving force to the output gears, the output gears being drivingly coupled to the axles.
摘要翻译：公开了一种用于沿着轴将轴的驱动力差分地分配的差动装置。所述差速装置具有能够围绕所述轴线旋转的壳体，所述壳体包括被配置为接收所述驱动力的凸缘和垂直于所述轴线的所述壳体的轴; 由壳体的外周边缘的周边限定的开口，以允许其进入壳体，其横向的轴线从轴的中心向与轴向方向相反的方向偏离; 以及差速齿轮组，其容纳在壳体中并且驱动地联接到壳体，差速齿轮组包括可围绕轴旋转的输入齿轮，并输出与输入齿轮组合的齿轮，以将驱动力差分地分配到输出齿轮，输出齿轮被驱动地联接到轴。

7. 发明申请

US20060175621A1 Semiconductor light-emitting device light-emitting display method for manufacturing semiconductor light-emitting device and method for manufacturing light-emitting display 有权
标题翻译：用于制造半导体发光器件的半导体发光器件发光显示方法和用于制造发光显示器的方法
公开(公告)号：US20060175621A1
公开(公告)日：2006-08-10
申请号：US10496888
申请日：2002-12-27
申请人： Koji Ohtsuka , Hitoshi Murofushi
发明人： Koji Ohtsuka , Hitoshi Murofushi
IPC分类号： H01L21/00 , H01L33/00 , H01L29/18
CPC分类号： H01L27/156 , H01L33/10
摘要： A semiconductor light-emitting device includes substrate (3), a plurality of light-emitting-element-layers (10a, 10b, 10c, . . . ) of semiconductor material formed on the substrate (3) so as to be isolated from each other and having a wider band gap than the substrate (3), and phosphors (15a, 15b, 15c, . . . ) converting wavelengths of light from the light-emitting-element-layers (10a, 10b, 10c, . . . ) into other wavelengths.
摘要翻译：半导体发光装置包括基板（3），形成在基板（3）上的半导体材料的多个发光元件层（10a，10b，10b等），以便成为彼此隔离并且具有比衬底（3）更宽的带隙，以及将来自发光元件层（10a，15b）的光的波长转换的磷光体（15a，15b，15c ...） 10 b，10 c，...）到其他波长。

8. 发明授权

US06812687B1 Semiconductor current detector of improved noise immunity 失效
标题翻译：半导体电流检测器，提高抗噪声能力
公开(公告)号：US06812687B1
公开(公告)日：2004-11-02
申请号：US09724979
申请日：2000-11-28
申请人： Koji Ohtsuka
发明人： Koji Ohtsuka
IPC分类号： G01R3300
CPC分类号： H01L43/065 , G01R15/202
摘要： A current detector has a semiconductor Hall-effect device having a primary semiconductor region where a Hall voltage develops in proportion to the magnitude of the current to be detected. A conductor strip for carrying this current is formed on the semiconductor substrate via a plurality of insulating layers so as to extend around the primary semiconductor region of the Hall-effect device. In order to protect the Hall-effect device from inductive noise, a shielding layer of molybdenum or the like is interposed between the semiconductor substrate and the conductor strip, preferably by being sandwiched between the insulating layers.
摘要翻译：电流检测器具有半导体霍尔效应器件，其具有与要检测的电流的大小成比例地形成霍尔电压的初级半导体区域。通过多个绝缘层在半导体衬底上形成用于承载该电流的导体条，以便围绕霍尔效应器件的初级半导体区域延伸。为了保护霍尔效应器件免受电感噪声的影响，优选通过夹在绝缘层之间，在半导体衬底和导体条之间插入有钼或类似屏蔽层。

9. 发明授权

US06797153B1 Catalyst for hydrocracking of heavy oils and method of hydrocracking heavy oils 失效
标题翻译：重油加氢裂化催化剂和加氢裂化重油的方法
公开(公告)号：US06797153B1
公开(公告)日：2004-09-28
申请号：US09560047
申请日：2000-04-27
申请人： Hidetsugu Fukuyama , Koji Ohtsuka , Satoshi Terai , Shuhei Sawamoto
发明人： Hidetsugu Fukuyama , Koji Ohtsuka , Satoshi Terai , Shuhei Sawamoto
IPC分类号： C10G4700
CPC分类号： B01J23/745 , B01J21/18 , B01J35/1023 , B01J35/1042 , B01J35/1047 , C10G47/12
摘要： A catalyst for the hydrocracking of heavy oils contains iron and active carbon having an MCH conversion rate of 40-80%, a specific surface area of 600-1000 m2/g of, a pore volume of 0.5 to 1.4 cm3/g, 2-50 nanometers' mesopore volume of not less than 60% and an average pore diameter of 3-6 nanometers, the iron being carried on the active carbon in an amount of 1 to 20 wt. % to the active carbon. The hydrocracking process using the catalyst includes a first step of conducting hydrocracking at a temperature within the range of 360-450° C. at a hydrogen partial pressure of 2-14 MPaG and a second step of conducting hydrocracking at a temperature within the range of 400-480° C. at a hydrogen partial pressure of 2-18 MPaG, which can suppress the generation of coke and remove, in a high efficiency, heavy metals such as Ni and V, asphaltene, residual carbon, sulfur and nitrogen from the heavy oils.
摘要翻译：用于加氢裂化重油的催化剂含有MCH转化率为40-80％，比表面积为600-1000m 2 / g，孔体积为0.5-1.4cm 3的铁和活性炭 > / g，2-50纳米的中孔体积不小于60％，平均孔径为3-6纳米，铁在活性炭上载持量为1〜20重量％。％至活性炭。使用该催化剂的加氢裂化方法包括在2〜14MPaG的氢分压下，在360〜450℃的范围内进行加氢裂化的第1工序，在第2工序中， 400-480℃，氢分压为2-18MPaG，可以抑制焦炭的产生，从而高效地从重金属如Ni和V，沥青质，残余碳，硫和氮中除去重油。

10. 发明授权

US5158909A Method of fabricating a high voltage, high speed Schottky semiconductor device 失效
标题翻译：制造高电压，高速肖特基半导体器件的方法
公开(公告)号：US5158909A
公开(公告)日：1992-10-27
申请号：US599674
申请日：1990-10-17
申请人： Koji Ohtsuka , Yoshiro Kutsuzawa , Kimio Ogata , Hideyuki Ichinosawa
发明人： Koji Ohtsuka , Yoshiro Kutsuzawa , Kimio Ogata , Hideyuki Ichinosawa
IPC分类号： H01L29/872
CPC分类号： H01L29/872 , Y10S148/14 , Y10S438/934
摘要： A high voltage, high speed Schottky diode has an electrode of aluminum or like Schottky barrier metal formed on a semiconductor region to create a Schottky barrier therebetween. Also formed on the semiconductor region is a extremely thin resisitve layer of, typically, oxidized titanium surrounding the barrier metal electrode and electrically connected thereto. The resistive layer also creates a Schottky barrier at its interface with the semiconductor region and serves to expand the depletion region due to the barrier metal electrode, thereby preventing the concentration of the electric field at the periphery of the barrier metal electrode and so enhancing the voltage withstanding capability of the diode.
摘要翻译：高电压，高速肖特基二极管具有形成在半导体区域上的铝或类似的肖特基势垒金属的电极，以在它们之间产生肖特基势垒。还形成在半导体区域上的是非常薄的电阻层，通常围绕阻挡金属电极并与之电连接。电阻层在其与半导体区域的界面处也产生肖特基势垒，并且用于扩展由阻挡金属电极引起的耗尽区域，从而防止阻挡金属电极周围的电场浓度，从而提高电压耐二极管的能力。

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