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1. 发明授权

US06593246B1 Process for producing semiconductor device 有权
公开(公告)号：US06593246B1
公开(公告)日：2003-07-15
申请号：US09525265
申请日：2000-03-14
申请人： Toshiaki Hasegawa , Mitsuru Taguchi , Koji Miyata
发明人： Toshiaki Hasegawa , Mitsuru Taguchi , Koji Miyata
IPC分类号： H01L21302
CPC分类号： H01L21/76835 , H01L21/02118 , H01L21/0212 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/3127 , H01L21/31695 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/76829 , H01L2221/1031
摘要： A process for producing a semiconductor device for forming a highly reliable wiring structure is provided that solves the problem occurring on using a xerogel or a fluorine resin in an inter level dielectric between the wirings to decrease a wiring capacitance, and the problem occurring on misalignment. A process for producing a semiconductor device comprising an inter level dielectric containing a xerogel film or a fluorine resin film comprises a step of forming, on the inter level dielectric comprising a lower layer of the inter level dielectric formed with an organic film and an upper layer of the inter level dielectric formed with a xerogel film or a fluorine resin film, a first mask to be an etching mask for forming a via contact hole by etching the inter level dielectric, and a step of forming, on the first mask, a second mask, which comprises a different material from the first mask, to be an etching mask for forming a wiring groove by etching the inter level dielectric.

2. 发明授权

US06333258B1 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06333258B1
公开(公告)日：2001-12-25
申请号：US09533726
申请日：2000-03-23
申请人： Koji Miyata , Toshiaki Hasegawa , Mitsuru Taguchi
发明人： Koji Miyata , Toshiaki Hasegawa , Mitsuru Taguchi
IPC分类号： H01L214763
CPC分类号： H01L21/76811 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76813
摘要： A manufacturing method for forming a dual damascene structure in which the effective permittivity of an inter-layer insulating film is lowered without an etching mask for forming a contact hole, which is otherwise formed in the inter-layer insulating film. The manufacturing method comprises the step of forming an inorganic film to serve as an etching mask, on the inter-layer insulating film; the step of forming a first opening pattern for forming a wiring groove, in an upper part of the inorganic film; and the step of forming a second opening pattern for forming a contact hole, so as to coincide with the first opening pattern at least partially. Further, the contact hole is formed in the inter-layer insulating film by employing an etching mask made of the inorganic film, the inorganic film is etched into a state where only a third opening pattern obtained by transferring the first opening pattern is formed, and a wiring groove is formed in the inter-layer insulating film by employing the resulting inorganic film as the etching mask.
摘要翻译：一种用于形成双镶嵌结构的制造方法，其中层间绝缘膜的有效介电常数降低，而没有用于形成在层间绝缘膜中形成的接触孔的蚀刻掩模。该制造方法包括在层间绝缘膜上形成用作蚀刻掩模的无机膜的步骤; 在无机膜的上部形成用于形成布线槽的第一开口图案的步骤; 以及形成用于形成接触孔的第二开口图案的步骤，以便至少部分地与第一开口图案一致。此外，通过使用由无机膜制成的蚀刻掩模，在层间绝缘膜中形成接触孔，将无机膜蚀刻到仅形成通过转印第一开口图案而获得的第三开口图案的状态，以及通过使用所得无机膜作为蚀刻掩模，在层间绝缘膜中形成布线槽。

3. 再颁专利

USRE40748E1 Process for producing semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：USRE40748E1
公开(公告)日：2009-06-16
申请号：US10954148
申请日：2004-09-30
申请人： Toshiaki Hasegawa , Mitsuru Taguchi , Koji Miyata
发明人： Toshiaki Hasegawa , Mitsuru Taguchi , Koji Miyata
IPC分类号： H01L21/302 , H01L21/461 , H01L21/31 , H01L21/4763
CPC分类号： H01L21/76835 , H01L21/02118 , H01L21/0212 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/3127 , H01L21/31695 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/76829 , H01L2221/1031
摘要： A process for producing a semiconductor device for forming a highly reliable wiring structure is provided that solves the problem occurring on using a xerogel or a fluorine resin in an inter level dielectric between the wirings to decrease a wiring capacitance, and the problem occurring on misalignment. A process for producing a semiconductor device comprising an inter level dielectric containing a xerogel film or a fluorine resin film comprises a step of forming, on the inter level dielectric comprising a lower layer of the inter level dielectric formed with an organic film and an upper layer of the inter level dielectric formed with a xerogel film or a fluorine resin film, a first mask to be an etching mask for forming a via contact hole by etching the inter level dielectric, and a step of forming, on the first mask, a second mask, which comprises a different material from the first mask, to be an etching mask for forming a wiring groove by etching the inter level dielectric.
摘要翻译：提供一种用于形成高可靠性布线结构的半导体器件的制造方法，其解决了在布线之间的层间电介质中使用干凝胶或氟树脂时出现的问题，以降低布线电容，并且解决了在未对准上出现的问题。一种包含含有干凝胶膜或氟树脂膜的层间电介质的半导体器件的制造方法，其特征在于，在包含由有机膜形成的层间电介质的下层的层间电介质和上层由干燥凝胶膜或氟树脂膜形成的层间电介质，作为用于通过蚀刻层间电介质形成通孔接触孔的蚀刻掩模的第一掩模，以及在第一掩模上形成第二掩模的步骤掩模，其包括与第一掩模不同的材料，作为用于通过蚀刻级间电介质形成布线槽的蚀刻掩模。

4. 发明申请

US20160104840A1 RESISTIVE MEMORY WITH A THERMALLY INSULATING REGION 审中-公开
标题翻译：具有绝热绝缘区的电阻记忆
公开(公告)号：US20160104840A1
公开(公告)日：2016-04-14
申请号：US14511818
申请日：2014-10-10
申请人： Beth Cook , Nirmal Ramaswamy , Shuichiro Yasuda , Scott Sills , Koji Miyata
发明人： Beth Cook , Nirmal Ramaswamy , Shuichiro Yasuda , Scott Sills , Koji Miyata
IPC分类号： H01L45/00
CPC分类号： H01L45/1293 , G11C13/0002 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253
摘要： A resistive memory includes a memory cell having a first electrode, a second electrode and a resistive memory element between the first electrode and the second electrode. The memory cell includes a thermally insulating region. The thermally insulating region may be included in at least one electrode of the memory cell and/or within an electrically insulating region. The thermally insulating region can confine heat within the memory cell and thereby can reduce the current and/or voltage needed to write information in the resistive memory element.
摘要翻译：电阻存储器包括在第一电极和第二电极之间具有第一电极，第二电极和电阻存储元件的存储单元。存储单元包括绝热区域。绝热区域可以包括在存储单元的至少一个电极中和/或电绝缘区域内。隔热区域可以将热量限制在存储单元内，从而可以减少在电阻式存储元件中写入信息所需的电流和/或电压。

5. 发明授权

US09118005B2 Manufacturing method of a memory device with a reversible variable-resistance memory layer between electrodes extending along intersecting directions 有权
标题翻译：具有沿相交方向延伸的电极之间的可逆可变电阻存储层的存储器件的制造方法
公开(公告)号：US09118005B2
公开(公告)日：2015-08-25
申请号：US13271537
申请日：2011-10-12
申请人： Koji Miyata
发明人： Koji Miyata
IPC分类号： H01L27/115 , H01L45/00 , G11C13/00 , H01L27/24
CPC分类号： H01L45/1266 , G11C13/0002 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/1691
摘要： A manufacturing method of a memory apparatus in which memory devices each having a memory layer whose resistance value reversibly varies by voltage application between bottom and upper electrodes are formed, includes: forming and shaping a bottom electrode material film into a first linear pattern extending in a first direction; forming a memory layer material film and an upper electrode material film in this order on the bottom electrode material film; forming the upper electrodes and the memory layers by shaping the upper electrode material film and the memory layer material film into a second linear pattern extending in a second direction intersecting with the first direction; and forming the bottom electrodes having a quadrangle plane shape at regions where the first linear pattern intersect with the second linear pattern by shaping the bottom electrode material film into the second linear pattern.
摘要翻译：一种存储装置的制造方法，其特征在于，形成存储器件，每个存储器件具有其电阻值由底部和上部电极之间的电压施加而可逆地变化的存储器层，包括：将底部电极材料膜形成和成形为在第一方向在底部电极材料膜上依次形成记忆层材料膜和上部电极材料膜; 通过将上电极材料膜和存储层材料膜成形为沿与第一方向相交的第二方向延伸的第二线性图案形成上电极和存储层; 以及通过将底部电极材料膜成形为第二线性图案，在第一线性图案与第二线性图案相交的区域处形成具有四边形平面形状的底部电极。

6. 发明申请

US20120161271A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120161271A1
公开(公告)日：2012-06-28
申请号：US13408368
申请日：2012-02-29
申请人： Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
发明人： Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
IPC分类号： H01L31/0203
CPC分类号： H01L31/0203 , H01L2224/32245 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/1815 , H01L2924/3025 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device having a substrate including a photodiode; a resin layer formed on an upper surface of the substrate, the resin layer not covering a light receiving region of the photodiode, the resin layer including at least one groove surrounding the light receiving region; and a molding resin portion formed by mold-sealing the photodiode with the resin layer thereon so as not to cover the light receiving region.
摘要翻译：一种具有包括光电二极管的衬底的半导体器件; 树脂层，形成在所述基板的上表面上，所述树脂层不覆盖所述光电二极管的受光区域，所述树脂层包括围绕所述受光区域的至少一个沟槽; 以及通过将光电二极管与其上的树脂层模制密封而不覆盖光接收区域而形成的模制树脂部分。

7. 发明申请

US20120091428A1 MANUFACTURING METHOD OF MEMORY APPARATUS, MEMORY DEVICE AND MEMORY APPARATUS 有权
标题翻译：存储器，存储器和存储器的制造方法
公开(公告)号：US20120091428A1
公开(公告)日：2012-04-19
申请号：US13271537
申请日：2011-10-12
申请人： Koji Miyata
发明人： Koji Miyata
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L45/1266 , G11C13/0002 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/1691
摘要： A manufacturing method of a memory apparatus in which memory devices each having a memory layer whose resistance value reversibly varies by voltage application between bottom and upper electrodes are formed, includes: forming and shaping a bottom electrode material film into a first linear pattern extending in a first direction; forming a memory layer material film and an upper electrode material film in this order on the bottom electrode material film; forming the upper electrodes and the memory layers by shaping the upper electrode material film and the memory layer material film into a second linear pattern extending in a second direction intersecting with the first direction; and forming the bottom electrodes having a quadrangle plane shape at regions where the first linear pattern intersect with the second linear pattern by shaping the bottom electrode material film into the second linear pattern.
摘要翻译：一种存储装置的制造方法，其特征在于，形成存储器件，每个存储器件具有其电阻值由底部和上部电极之间的电压施加而可逆地变化的存储器层，包括：将底部电极材料膜形成和成形为在第一方向在底部电极材料膜上依次形成记忆层材料膜和上部电极材料膜; 通过将上电极材料膜和存储层材料膜成形为沿与第一方向相交的第二方向延伸的第二线性图案形成上电极和存储层; 以及通过将底部电极材料膜成形为第二线性图案，在第一线性图案与第二线性图案相交的区域处形成具有四边形平面形状的底部电极。

8. 发明授权

US07948136B2 Permanent magnet motor with magnets in an adjusted position to reduce cogging torque 有权
标题翻译：永磁电动机具有调整位置的磁铁，以减少齿槽转矩
公开(公告)号：US07948136B2
公开(公告)日：2011-05-24
申请号：US11205523
申请日：2005-08-17
申请人： Koji Miyata
发明人： Koji Miyata
IPC分类号： H02K1/27
CPC分类号： H02K1/278 , H02K29/03 , Y10T29/49004 , Y10T29/49009 , Y10T29/49012
摘要： To reduce the cogging torque of servomotors, electric power steering motors, and others, there is provided a permanent magnet motor comprising: a rotor 10 comprising a rotor yoke 11 and a plurality of permanent magnets (M1-M10); and a stator 20 comprising a stator yoke 22, salient magnetic poles 21, and armature windings 23, wherein at least one of the permanent magnets is disposed in an adjustment position that is displaced from a corresponding reference position in at least one of the circumferential, radial, and axial directions of the rotor yoke, and the plurality of permanent magnets excluding the permanent magnet disposed in the adjustment position is disposed in the reference positions, and wherein the adjustment position is set so that the permanent magnet motor in which at least one of the plurality of permanent magnets is disposed in the adjustment position has a smaller cogging torque than a permanent magnet motor in which all of the plurality of permanent magnets are disposed in the reference positions; and a method for adjusting a cogging torque of a permanent magnet motor.
摘要翻译：为了减小伺服电动机，电动助力转向电动机等的齿槽转矩，提供了一种永磁电动机，包括：转子10，包括转子磁轭11和多个永磁体（M1-M10）; 以及定子20，其包括定子磁轭22，凸极磁极21和电枢绕组23，其中永磁体中的至少一个设置在调节位置，该调整位置在圆周方向的至少一个中相对于基准位置偏移，转子轭的径向和轴向，并且将排列在调节位置的永磁体以外的多个永磁体设置在基准位置，并且其中调整位置被设定为使得永磁体电动机中至少有一个所述多个永久磁铁配置在所述调整位置中具有比永久磁铁电动机小的齿槽转矩，其中所述多个永久磁铁全部设置在所述基准位置; 以及用于调整永磁电动机的齿槽转矩的方法。

9. 发明授权

US07898137B2 Permanent magnet and permanent magnet rotating machine 有权
标题翻译：永磁和永磁旋转机
公开(公告)号：US07898137B2
公开(公告)日：2011-03-01
申请号：US11846803
申请日：2007-08-29
申请人： Koji Miyata
发明人： Koji Miyata
IPC分类号： H02K21/12
CPC分类号： H02K1/278
摘要： A permanent magnet has a D-shaped cross section including an arcuate top surface (22), a flat bottom surface (24), and side surfaces (26, 28). Provided that a plurality of permanent magnets are circumferentially arranged so that a great circle (S) circumscribes the apexes (P) on the arcuate top surfaces (22), the top surface (22) includes a central region which delineates an arc of a small circle (T) off-centered from the great circle, and end regions (22a, 22b) which are positioned outside the small circle (T) and inside the great circle (S).
摘要翻译：永磁体具有包括弧形顶表面（22），平坦底表面（24）和侧表面（26,28）的D形横截面。如果多个永久磁铁沿圆周方向布置，使得大圆（S）围绕弧形顶表面（22）上的顶点（P），则顶表面（22）包括描绘小弧形弧从大圆偏心的圆（T）和位于小圆（T）外侧且在大圆（S）内的端部区域（22a，22b）。

10. 发明申请

US20100253173A1 AXIAL GAP TYPE CORELESS ROTATING MACHINE 有权
标题翻译：轴承类型无缝旋转机
公开(公告)号：US20100253173A1
公开(公告)日：2010-10-07
申请号：US12676062
申请日：2008-09-10
申请人： Koji Miyata , Minori Miyata , Atsushi Miyata , Hideki Kobayashi , Naoki Watanabe , Takehisa Minowa
发明人： Koji Miyata , Minori Miyata , Atsushi Miyata , Hideki Kobayashi , Naoki Watanabe , Takehisa Minowa
IPC分类号： H02K3/18
CPC分类号： H02K3/47 , H02K16/00 , H02K21/24
摘要： A high-output and highly efficient axial gap type rotating machine capable of reducing an eddy current generated in a winding wire and supplying a larger current is provided. The axial gap type rotating machine may include a housing, a rotating shaft rotatably supported in the housing; two rotors capable of rotating integrally with the rotating shaft, and a stator fixed to the housing, the stator disposed in an air gap formed by the rotating plates disposed to face each other, the stator including a fixing plate and coils disposed in a circle on the fixing plate so as to face the circles of the permanent magnets, wherein each of the coils includes a winding wire formed by a bundle of at least two coil conductors having rectangular cross sections by aligning at least one of long sides and short sides thereof, and the winding wire has an outer circumference covered with an insulating coating and is wound such that the long sides in cross section of the coil conductors are positioned perpendicular to the magnetic pole surfaces of the permanent magnets.
摘要翻译：提供了能够减少绕组线中产生的涡电流并提供较大电流的高输出和高效率轴向间隙型旋转机。轴向间隙型旋转机械可以包括壳体，可旋转地支撑在壳体中的旋转轴; 能够与旋转轴一体旋转的两个转子和固定到壳体的定子，定子设置在由彼此相对设置的旋转板形成的空气间隙中，定子包括固定板和设置成圆圈的线圈所述固定板朝向所述永磁体的圆周，其中每个所述线圈包括由具有矩形横截面的至少两个线圈导体的束形成的绕组，所述绕组线具有通过对准其长边和短边中的至少一个，并且绕组线具有覆盖有绝缘涂层的外周，并且被卷绕成使得线圈导体的横截面的长边垂直于永磁体的磁极表面定位。

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