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1. 发明授权

US06656592B2 Carbon film and method of forming the same 失效
标题翻译：碳膜及其形成方法
公开(公告)号：US06656592B2
公开(公告)日：2003-12-02
申请号：US09977222
申请日：2001-10-16
申请人： Koji Miyake , Yasuo Murakami , Jo Takeuchi , Takahiro Nakahigashi , Kiyoshi Ogata
发明人： Koji Miyake , Yasuo Murakami , Jo Takeuchi , Takahiro Nakahigashi , Kiyoshi Ogata
IPC分类号： B32B900
CPC分类号： C23C16/26 , Y10T428/30
摘要： A carbon film C containing carbon as a main component, formed on the surface of a soft base material 4, characterized in that the film C is cracked A and divided into a plurality of regions B, and an average area of respective regions (blocks) surrounded by cracks A is 0.15×10−3 mm2 to 20×10−3 mm2.
摘要翻译：在软质基材4的表面形成有以碳为主要成分的碳膜C，其特征在于，膜C断裂A，分割成多个区域B，各区域（块）的平均面积被裂缝A包围在0.15×10 -3 mm 2至20×10 -3 mm 2之间。

2. 发明授权

US06468884B2 Method of forming silicon-contained crystal thin film 失效
标题翻译：形成含硅晶体薄膜的方法
公开(公告)号：US06468884B2
公开(公告)日：2002-10-22
申请号：US09765728
申请日：2001-01-19
申请人： Koji Miyake , Kiyoshi Ogata
发明人： Koji Miyake , Kiyoshi Ogata
IPC分类号： H01L2136
CPC分类号： H01L21/76254 , C30B19/00 , C30B19/12 , C30B29/06 , C30B29/60 , C30B31/22 , H01L21/26506
摘要： A method of forming a silicon-contained crystal thin film can efficiently form the crystal thin film of a relatively large thickness. In the method, hydrogen ions are implanted into a silicon-contained crystal substrate. Voids are formed by immersing the ion-implanted crystal substrate in a melted metal liquid containing, e.g., silicon and indium for heating the substrate. While pressing an ion-injected surface of the substrate, the substrate is heated by the melted metal liquid to form the voids. By cooling the liquid, the silicon in the supersaturated liquid is deposited on the surface of the substrate so that the silicon-contained crystal film is formed on the surface of the substrate. The substrate is divided in the void-formed position. Thereby, a thin film including the silicon-contained crystal film layered on a portion of the substrate is obtained. The silicon-contained crystal thin film thus obtained can be adhered to a support substrate, if necessary.
摘要翻译：形成含硅晶体薄膜的方法可以有效地形成厚度较大的晶体薄膜。在该方法中，将氢离子注入到含硅晶体基板中。通过将离子注入的晶体衬底浸入含有例如硅和铟的熔融金属液体中以加热衬底而形成空隙。在按压衬底的离子注入表面的同时，通过熔化的金属液体加热衬底以形成空隙。通过冷却液体，将过饱和液体中的硅沉积在基板的表面上，使得在基板的表面上形成含硅晶体膜。基板被分成空隙形成位置。由此，获得了包含层叠在基板的一部分上的含硅晶体膜的薄膜。如果需要，由此获得的含硅晶体薄膜可以粘附到支撑基板上。

3. 发明授权

US08675817B2 Industrial X-ray generator 有权
标题翻译：工业X射线发生器
公开(公告)号：US08675817B2
公开(公告)日：2014-03-18
申请号：US13194430
申请日：2011-07-29
申请人： Kiyoshi Ogata , Tetsuo Kani , Makoto Kanbe , Yoshihiro Takeda , Takahisa Sato
发明人： Kiyoshi Ogata , Tetsuo Kani , Makoto Kanbe , Yoshihiro Takeda , Takahisa Sato
IPC分类号： H05G1/10
CPC分类号： H01J35/16 , H01J35/045 , H01J2235/1216 , H01J2235/1291 , H01J2235/166 , H05G1/06 , H05G1/10
摘要： An X-ray generator includes a booster circuit formed by sequentially connecting a plurality of boosting steps extending from a low-voltage terminal to a high-voltage terminal of its own.The booster circuit is arranged in a lateral region of the X-ray tube so as to make the low-voltage terminal of its own correspond to the anode of the X-ray tube and the high-voltage terminal of its own correspond to the cathode of the X-ray tube. A lead wire extending from the cathode to the outside of the X-ray tube is connected to the high-voltage terminal of the booster circuit. A molded member containing insulating resin is formed to shield at least a cathode side end part of the X-ray tube, the lead wire outwardly extending from the cathode side end part and a high-voltage terminal side end part of the booster circuit.
摘要翻译： X射线发生器包括通过将从低压端子延伸到多个升压步骤顺序地连接到本身的高压端子而形成的升压电路。升压电路配置在X射线管的横向区域，以使其本身的低压端子对应于X射线管的阳极，并且其本身的高电压端子对应于阴极的X射线管。从X射线管的阴极延伸到外部的引线与升压电路的高压端子连接。形成包含绝缘树脂的模制件，用于屏蔽X射线管的至少阴极侧端部，引线从升压电路的阴极侧端部和高压端子侧端部向外延伸。

4. 发明申请

US20120027179A1 INDUSTRIAL X-RAY GENERATOR 有权
标题翻译：工业X射线发生器
公开(公告)号：US20120027179A1
公开(公告)日：2012-02-02
申请号：US13194430
申请日：2011-07-29
申请人： Kiyoshi Ogata , Tetsuo Kani , Makoto Kanbe , Yoshihiro Takeda , Takahisa Sato
发明人： Kiyoshi Ogata , Tetsuo Kani , Makoto Kanbe , Yoshihiro Takeda , Takahisa Sato
IPC分类号： H05G1/10
CPC分类号： H01J35/16 , H01J35/045 , H01J2235/1216 , H01J2235/1291 , H01J2235/166 , H05G1/06 , H05G1/10
摘要： An X-ray generator includes a booster circuit formed by sequentially connecting a plurality of boosting steps extending from a low-voltage terminal to a high-voltage terminal of its own.The booster circuit is arranged in a lateral region of the X-ray tube so as to make the low-voltage terminal of its own correspond to the anode of the X-ray tube and the high-voltage terminal of its own correspond to the cathode of the X-ray tube. A lead wire extending from the cathode to the outside of the X-ray tube is connected to the high-voltage terminal of the booster circuit. A molded member containing insulating resin is formed to shield at least a cathode side end part of the X-ray tube, the lead wire outwardly extending from the cathode side end part and a high-voltage terminal side end part of the booster circuit.
摘要翻译： X射线发生器包括通过将从低压端子延伸到多个升压步骤顺序地连接到本身的高电压端子而形成的升压电路。升压电路配置在X射线管的横向区域，以使其本身的低压端子对应于X射线管的阳极，并且其自身的高压端子对应于阴极的X射线管。从X射线管的阴极延伸到外部的引线与升压电路的高电压端子连接。形成包含绝缘树脂的模制件，用于屏蔽X射线管的至少阴极侧端部，引线从升压电路的阴极侧端部和高压端子侧端部向外延伸。

5. 发明申请

US20050142701A1 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20050142701A1
公开(公告)日：2005-06-30
申请号：US10891522
申请日：2004-07-15
申请人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
发明人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
IPC分类号： G02F1/1368 , G02F1/136 , G02F1/1362 , G09F9/30 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L21/02686 , G02F1/13454 , H01L21/02595 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system. As described above, the energy density of laser beam irradiation to be applied on a silicon film formed on a substrate is controlled in accordance with the film thickness of the silicon film whenever the film thickness of the silicon film is measured. Accordingly, polysilicon uniform and large in grain size can be formed on the whole surface of a large-size substrate. As a result, polysilicon TFTs can be formed in a large area.
摘要翻译：测量在基板上形成的非晶硅膜的平均膜厚。然后，用激光束照射非晶硅膜以形成多晶硅膜。测量多晶硅膜的晶粒尺寸分布。基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。然后，测定下一非晶硅膜的平均膜厚。基于下一非晶硅膜的平均膜厚和先前的非晶硅膜的平均膜厚计算激光束照射的能量密度值。能量密度的值被反馈到激光束照射系统。如上所述，每当测量硅膜的膜厚时，根据硅膜的膜厚度来控制施加在形成在基板上的硅膜上的激光束照射的能量密度。因此，可以在大尺寸基板的整个表面上形成均匀且粒径大的多晶硅。结果，可以在大面积上形成多晶硅TFT。

6. 发明授权

US06815717B2 Thin-film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06815717B2
公开(公告)日：2004-11-09
申请号：US09988585
申请日：2001-11-20
申请人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
发明人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
IPC分类号： H01L2904
CPC分类号： H01L29/4908 , H01L29/66757
摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.

7. 发明授权

US06579754B2 Semiconductor memory device having ferroelectric film and manufacturing method thereof 失效
标题翻译：具有铁电体膜的半导体存储器件及其制造方法
公开(公告)号：US06579754B2
公开(公告)日：2003-06-17
申请号：US09850224
申请日：2001-05-08
申请人： Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
发明人： Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
IPC分类号： H01L218242
CPC分类号： H01L28/55 , G11C11/22 , H01L21/31691
摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of a crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).
摘要翻译：本发明是以制造成品率高的铁电薄膜电容器作为存储电容器的高质量的半导体存储器件，规定了电容器的铁电薄膜，晶体尺寸的相对标准偏差为13％，从而确保高的剩余极化值和小的薄膜疲劳（大的可重写数量）。

8. 发明授权

US06445025B2 Semiconductor memory device and manufacturing method thereof 失效
公开(公告)号：US06445025B2
公开(公告)日：2002-09-03
申请号：US09848420
申请日：2001-05-04
申请人： Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
发明人： Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
IPC分类号： H01L2976
CPC分类号： H01L28/55 , G11C11/22 , H01L21/31691
摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

9. 发明授权

US06316798B1 Ferroelectric memory device and method for manufacturing the same 失效
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US06316798B1
公开(公告)日：2001-11-13
申请号：US09331670
申请日：1999-06-23
申请人： Kiyoshi Ogata , Kazuhiko Horikoshi , Kazufumi Suenaga , Hisayuki Kato , Keiichi Yoshizumi , Masahito Yamazaki
发明人： Kiyoshi Ogata , Kazuhiko Horikoshi , Kazufumi Suenaga , Hisayuki Kato , Keiichi Yoshizumi , Masahito Yamazaki
IPC分类号： H01L2976
CPC分类号： H01L28/57 , H01L27/1203
摘要： A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing one or a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7 /electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of the ferroelectric characteristic, thereby to attain a long life ferroelectric memory device.
摘要翻译：使用薄铁电薄膜电容器作为记忆电容器的长寿命铁电存储器件通过在铁氧体层7的边界上的上保护电极和上电极8以及劣化防止层上设置一个或多个降解防止层来获得 /电极6,8，或者提供在铁电层7 /上电极8的边界处减小改性层的步骤。这提供了一种薄铁电薄膜电容器，其经受较少的疲劳和压印，并且铁电体的劣化较少特性，从而获得长寿命的铁电存储器件。

10. 发明授权

US6103321A Method of manufacturing an ultraviolet resistant object 失效
标题翻译：制造抗紫外线物体的方法
公开(公告)号：US6103321A
公开(公告)日：2000-08-15
申请号：US212381
申请日：1998-12-16
申请人： Yasushi Fujinami , Akinori Ebe , Osamu Imai , Kiyoshi Ogata
发明人： Yasushi Fujinami , Akinori Ebe , Osamu Imai , Kiyoshi Ogata
IPC分类号： C08J7/00 , B29C35/08 , B29C59/16 , B32B7/02 , C08J7/06 , C23C14/02 , C23C14/08 , C23C16/02 , B05D3/00
CPC分类号： B29C59/16 , C23C14/027 , C23C14/083 , B29C2035/0872
摘要： A method of manufacturing an ultraviolet resistant object, wherein the object has at least a portion made of a polymer material, and is provided with an ultraviolet shielding film covering at least a portion of a surface of the portion made of the polymer material, including the steps of forming the ultraviolet shielding film by vapor deposition over the surface of the portion to be covered with the film; and irradiating, prior to the formation of the ultraviolet shielding film or in an initial stage of the film forming step, the film formation surface with ions with an energy in a range from 0.05 keV to 2 keV to attain the total irradiation rate in a range from 1.times.10.sup.13 ions/cm.sup.2 to 5.times.10.sup.17 ions/cm.sup.2.
摘要翻译：一种制造防紫外线物体的方法，其中所述物体至少具有由聚合物材料制成的部分，并且设置有覆盖由所述聚合物材料制成的部分的表面的至少一部分的紫外线屏蔽膜，所述紫外线屏蔽膜包括通过气相沉积在待覆盖的部分的表面上形成紫外线屏蔽膜的步骤; 并且在形成紫外线屏蔽膜之前或在成膜步骤的初始阶段，在成膜表面上照射能量在0.05keV至2keV的能量的离子，以使总辐照率达到一定范围从1×10 13离子/ cm 2到5×10 17个离子/ cm 2。

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