会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 8. 发明授权
    • Process for cleaning harmful gas
    • 清洁有害气体的过程
    • US5378444A
    • 1995-01-03
    • US975698
    • 1992-11-13
    • Noboru AkitaToshiya HatakeyamaTakashi ShimadaKeiichi Iwata
    • Noboru AkitaToshiya HatakeyamaTakashi ShimadaKeiichi Iwata
    • B01D53/68C01B7/07
    • B01D53/68
    • There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gaseous halogenide such as chlorine, hydrogen chloride, dichlorosilane, silicon tetrachloride, phosphorus trichloride, chlorine trifluoride, boron trichloride, boron trifluoride, tungsten hexafluoride, silicon tetrafluoride, fluorine, hydrogen fluoride and hydrogen bromide into contact with a cleaning agent comprising zinc oxide, aluminum oxide and an alkali compound to remove the above halogenide. The above process is extremely effective for promptly and efficiently removing the above gaseous halogenide that is contained in the gas discharged from semiconductor manufacturing process or leaked suddenly from a gas bomb in an emergency.
    • 公开了一种清洁有害气体的方法,该方法包括使氯,氯化氢,二氯硅烷,四氯化硅,三氯化磷,三氟化氯,三氯化硼,三氟化硼,六氟化钨,四氟化硅,氟,氢等有害的气态卤化物 氟化物和溴化氢与包含氧化锌,氧化铝和碱性化合物的清洗剂接触以除去上述卤化物。 上述过程对于迅速有效地除去在半导体制造过程中排出的气体中所含的上述气态卤化物或在紧急情况下突然从气体炸弹泄漏而非常有效。