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1. 发明授权

US4839307A Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement 失效
标题翻译：制造具有独特电流限制的条形异质结激光器的方法
公开(公告)号：US4839307A
公开(公告)日：1989-06-13
申请号：US48616
申请日：1987-05-11
申请人： Koichi Imanaka , Hiroshi Imamoto
发明人： Koichi Imanaka , Hiroshi Imamoto
IPC分类号： H01S5/223 , H01S5/24 , H01S5/30 , H01S5/323
CPC分类号： H01S5/223 , H01S5/24 , H01S5/305 , H01S5/2231 , H01S5/2237 , H01S5/2238 , H01S5/3081 , H01S5/32308 , Y10S148/041 , Y10S148/056 , Y10S148/072 , Y10S148/095
摘要： A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs: Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.
摘要翻译：具有内部电流限制的半导体激光器包括被处理为具有作为倾斜表面的（n11）A面（n = 1-5）的凹槽或电平差的（100）面取向的p型GaAs衬底。按照上述顺序，在基板上生长AlGaAs：Si层，AlGaAs：Be包层，AlGaAs有源层和AlGaAs：Sn包覆层。由于Si在（100）面上作为n型材料，在（n11）面上作为p型材料起作用，所以AlGaAs：Si层仅在沟槽中成为p型层，并且在该部分形成电流路径。激光器可以通过在单个步骤中应用的分子束外延制造。

2. 发明授权

US5010556A A stripe-shaped heterojunction laser with unique current confinement 失效
标题翻译：具有独特电流限制的条纹异质结激光器
公开(公告)号：US5010556A
公开(公告)日：1991-04-23
申请号：US297025
申请日：1989-01-13
申请人： Koichi Imanaka , Hiroshi Imamoto
发明人： Koichi Imanaka , Hiroshi Imamoto
IPC分类号： H01S5/223 , H01S5/24 , H01S5/30 , H01S5/323
CPC分类号： H01S5/223 , H01S5/24 , H01S5/305 , H01S5/2231 , H01S5/2237 , H01S5/2238 , H01S5/3081 , H01S5/32308 , Y10S148/041 , Y10S148/056 , Y10S148/072 , Y10S148/095
摘要： A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs:Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.

3. 发明授权

US5495096A Multi-focus optical device 失效
标题翻译：多焦点光学装置
公开(公告)号：US5495096A
公开(公告)日：1996-02-27
申请号：US948279
申请日：1992-09-21
申请人： Shiro Ogata , Hiroshi Goto , Yoshinori Ito , Koichi Imanaka
发明人： Shiro Ogata , Hiroshi Goto , Yoshinori Ito , Koichi Imanaka
IPC分类号： G06K7/10
CPC分类号： G06K7/10811 , G06K2207/1013
摘要： A multi-focus optical sensing device for use in bar code scanners, photoelectric sensors and the like is disclosed. To extend the range of detection along the optical axis, without increasing the detection time, the focal point of the light beam is caused to move along the optical axis. A control and modulation circuit varies a current I.sub.f which drives an optical semiconductor serving as a light source. This changes the focal distance of a refraction lattice and so causes the focal position of the light beam emitted by light source to scan along the optical axis. This scan is repeated each time a polygonal mirror scans the light beam over the narrowest width 1/n (where n is an integer) of the bar code lines. A processing unit samples and processes the signal from a photodetector unit while the light beam is being scanned along the optical axis.
摘要翻译：公开了一种用于条形码扫描器，光电传感器等的多焦点光学感测装置。为了延长沿光轴的检测范围，不增加检测时间，使光束的焦点沿着光轴移动。控制和调制电路改变驱动用作光源的光半导体的电流If。这改变了折射格子的焦距，因此导致由光源发射的光束的焦点位置沿着光轴扫描。每次多角镜扫描条形码线的最窄宽度1 / n（其中n为整数）的光束时，重复该扫描。当沿着光轴扫描光束时，处理单元对来自光电检测器单元的信号进行采样和处理。

4. 发明授权

US4949351A Surface-emitting semiconductor laser and manufacturing method of same 失效
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：US4949351A
公开(公告)日：1990-08-14
申请号：US337095
申请日：1989-04-12
申请人： Koichi Imanaka
发明人： Koichi Imanaka
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183
CPC分类号： H01S5/18375 , H01S2301/176 , H01S5/0425
摘要： A surface-emitting semiconductor laser having a lower reflection mirror including a semiconductor multilayer disposed on an n-type substrate so as to form an upper reflection mirror with TiPtAu such that a double heterojunction between the lower and upper reflection mirrors is configured in a columnar shape and that an insulating material is buried in a periphery of the double heterojunction. The non-alloyed metal of TiPtAu serves three functions of an ohmic metal, a reflective layer, and an etching mask.
摘要翻译：一种表面发射半导体激光器，其具有包括设置在n型衬底上的半导体多层的下反射镜，以形成具有TiPtAu的上反射镜，使得下反射镜和上反射镜之间的双异质结构成为柱状并且绝缘材料被埋在双异质结的周边。 TiPtAu的非合金化金属具有欧姆金属，反射层和蚀刻掩模的三个功能。

5. 发明授权

US5296724A Light emitting semiconductor device having an optical element 失效
标题翻译：具有光学元件的发光半导体器件
公开(公告)号：US5296724A
公开(公告)日：1994-03-22
申请号：US692901
申请日：1991-04-29
申请人： Shiro Ogata , Koichi Imanaka , Hiroshi Goto , Yoshinori Ito , Kourou Kitajima
发明人： Shiro Ogata , Koichi Imanaka , Hiroshi Goto , Yoshinori Ito , Kourou Kitajima
IPC分类号： G02B6/42 , H01L33/48 , H01L33/58 , H01S5/00 , H01S5/022 , H01L33/00
CPC分类号： G02B6/4204 , H01L33/483 , H01L33/58 , H01S5/02288
摘要： A light emitting semiconductor device including a light emitting element, an optical element for condensing, collimating or diverging a ray emitted from the light emitting element which is packaged as a single unit with the light emitting element, and a cap molded by a fiber reinforced resin for supporting the light emitting element, the cap having an opening for a light emitting window which is provided with the optical element.
摘要翻译：一种发光半导体器件，包括发光元件，用于冷凝，准直或发散从发光元件发射的射线的光学元件，该发光元件作为单个发光元件被封装，并且由纤维增强树脂为了支撑发光元件，盖具有设置有光学元件的发光窗的开口。

6. 发明授权

US5130531A Reflective photosensor and semiconductor light emitting apparatus each using micro Fresnel lens 失效
标题翻译：每个使用微型菲涅尔透镜的反射光电传感器和半导体发光装置
公开(公告)号：US5130531A
公开(公告)日：1992-07-14
申请号：US533764
申请日：1990-06-06
申请人： Yoshinori Ito , Koichi Imanaka , Hiroshi Sekii , Shiro Ogata , Hiroshi Goto
发明人： Yoshinori Ito , Koichi Imanaka , Hiroshi Sekii , Shiro Ogata , Hiroshi Goto
IPC分类号： G01V8/14 , H01L31/0232 , H01L31/167 , H01L33/00 , H01S5/022 , H04N1/031
CPC分类号： H01L25/167 , G01V8/14 , H01L31/0232 , H01L31/167 , H04N1/0311 , H04N1/0315 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01S5/005 , H01S5/02212 , H01S5/02244 , H01S5/02248
摘要： In a reflective photosensor in which a light emitting element and a light receiving element are disposed in a mold resin, a planar optical element (micro Fresnel lens) including a first lens section for projecting a light emitted from the light emitting element toward a sense object in an external space and a second lens section for introducing a reflection light reflected from the sense object to the light receiving element is arranged in the mold resin. Favorably, the light emitting element is a light emitting diode of an edge emitting type and is set in a posture in which the element lies on its side. A reflection mirror is disposed in the model resin to introduce a light emitted from the light emitting diode to the first lens section.
摘要翻译：在其中发光元件和受光元件设置在模制树脂中的反射式光电传感器中，包括第一透镜部分的平面光学元件（微型菲涅尔透镜），其用于将从发光元件发射的光朝向感测对象在外部空间中，并且在模制树脂中布置有用于将从感测对象反射的反射光引入光接收元件的第二透镜部。有利地，发光元件是边缘发射型的发光二极管，并且被设置为元件位于其侧面的姿势。在模型树脂中设置反射镜以将从发光二极管发射的光引入第一透镜部。

7. 发明授权

US5407730A Physical variable sensor and method of manufacturing the same 失效
标题翻译：物理变量传感器及其制造方法
公开(公告)号：US5407730A
公开(公告)日：1995-04-18
申请号：US95320
申请日：1993-07-22
申请人： Koichi Imanaka
发明人： Koichi Imanaka
IPC分类号： G01D3/02 , G01D21/00 , B32B9/00
CPC分类号： G01D3/02 , G01D21/00 , H01L2224/48091 , H01L2224/48137 , Y10S428/901 , Y10T428/24917 , Y10T428/24926
摘要： A physical variable sensor with a processor circuit that can be used for any of a number of different applications. The variable sensor is compact and inexpensive to produce. The variable sensor comprises first, second and third substrates. On the second substrate is mounted a sensor component and a first processor circuit to convert the output of the sensor component to a standard electrical signal. A second processor circuit is provided on the third substrate. The second processor circuit includes an amplifier circuit, a digital fuzzy microprocessor and a luminous element to transmit an optical signal to the exterior. A solar cell can be provided on the first substrate to supply energy to the circuits. The first and third substrates are common to all types of sensors, and by modifying the second substrate different sensors to measure different types of variables can be produced.
摘要翻译：具有可用于许多不同应用中的任何一种的处理器电路的物理变量传感器。变量传感器结构紧凑，生产成本低廉。可变传感器包括第一，第二和第三基板。在第二基板上安装有传感器部件和第一处理器电路，以将传感器部件的输出转换成标准电信号。第二处理器电路设置在第三基板上。第二处理器电路包括放大器电路，数字模糊微处理器和用于向外部发送光信号的发光元件。可以在第一基板上提供太阳能电池以向电路提供能量。第一和第三基底对于所有类型的传感器是常见的，并且通过修改第二基底，可以产生不同传感器来测量不同类型的变量。

8. 发明授权

US5182228A Method of manufacturing a semiconductor light-emitting device 失效
标题翻译：制造半导体发光装置的方法
公开(公告)号：US5182228A
公开(公告)日：1993-01-26
申请号：US827782
申请日：1992-01-28
申请人： Hiroshi Sekii , Koichi Imanaka
发明人： Hiroshi Sekii , Koichi Imanaka
IPC分类号： H01L33/16 , H01S5/02 , H01S5/22 , H01S5/223
CPC分类号： H01S5/2231 , H01L33/16 , H01S5/0425 , H01S5/2205 , Y10S148/095 , Y10S148/099
摘要： In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried layer is made higher than the top surface of the ridge, the top surface of the ridge is situated in the resulting recess, and an electrode is formed from the top surface of the ridge to the top surface of the surrounding buried layer to cover the entirety of these surfaces. Making the buried layer higher than the top of the ridge prevents an electrical short circuit for being caused by an electrically conductive bonding agent used in junction-down mounting.
摘要翻译：在脊形波导型半导体发光器件中，掩埋层由高电阻半导体材料（例如非晶硅）组成，从而提高散热特性并延长寿命。掩埋层被制成高于脊的顶表面，脊的顶表面位于所得的凹部中，并且电极从脊的顶表面到周围掩埋层的顶表面形成以覆盖这些表面的整体。使掩埋层比脊的顶部高，防止由用于结露放置安装的导电粘合剂引起的电短路。

9. 发明授权

US5146295A Semiconductor light emitting device having a superlattice buffer layer 失效
标题翻译：具有超晶格缓冲层的半导体发光器件
公开(公告)号：US5146295A
公开(公告)日：1992-09-08
申请号：US625628
申请日：1990-12-05
申请人： Koichi Imanaka , Fumihiko Sato
发明人： Koichi Imanaka , Fumihiko Sato
IPC分类号： H01L33/00 , H01L33/04
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/0062
摘要： A buffer layer employed for an epitaxial growth includes two kinds of lattices of a superlattice of a lattice matching and a superlattice of a lattice mismatching or of a heterointerface so as to obtain the gas trap effect and the distortion removal effect, thereby improving the quality of the semiconductor device.
摘要翻译：用于外延生长的缓冲层包括晶格匹配的超晶格和晶格不匹配或异质界面的超晶格的两种晶格，以获得气体阱捕获效应和失真去除效果，从而提高半导体器件。

10. 发明授权

US5084893A Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US5084893A
公开(公告)日：1992-01-28
申请号：US539698
申请日：1990-06-18
申请人： Hiroshi Sekii , Koichi Imanaka
发明人： Hiroshi Sekii , Koichi Imanaka
IPC分类号： H01L33/06 , H01L33/14 , H01L33/16 , H01L33/30 , H01L33/34 , H01L33/40 , H01L33/62 , H01S5/00 , H01S5/02 , H01S5/22 , H01S5/223
CPC分类号： H01S5/2231 , H01L33/16 , H01S5/2205
摘要： In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried layer is made higher than the top surface of the ridge, the top surface of the ridge is situated in the resulting recess, and an electrode is formed from the top surface of the ridge to the top surface of the surrounding buried layer to cover the entirety of these surfaces. Making the buried layer higher than the top of the ridge prevents an electrical short circuit for being caused by an electrically conductive bonding agent used in junction-down mounting.
摘要翻译：在脊形波导型半导体发光器件中，掩埋层由高电阻半导体材料（例如非晶硅）组成，从而提高散热特性并延长寿命。掩埋层被制成高于脊的顶表面，脊的顶表面位于所得的凹部中，并且电极从脊的顶表面到周围掩埋层的顶表面形成以覆盖这些表面的整体。使掩埋层比脊的顶部高，防止由用于结露放置安装的导电粘合剂引起的电短路。

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