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1. 发明授权

US08039940B2 Semiconductor storage device, semiconductor device, and manufacturing method therefor 有权
标题翻译：半导体存储装置，半导体装置及其制造方法
公开(公告)号：US08039940B2
公开(公告)日：2011-10-18
申请号：US11956358
申请日：2007-12-14
申请人： Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
发明人： Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
IPC分类号： H01L23/26
CPC分类号： H01L23/26 , H01L21/3221 , H01L23/3128 , H01L24/48 , H01L25/0657 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/12032 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
摘要翻译：根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。

2. 发明申请

US20080099883A1 SEMICONDUCTOR STORAGE DEVICE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：半导体存储器件，半导体器件及其制造方法
公开(公告)号：US20080099883A1
公开(公告)日：2008-05-01
申请号：US11956358
申请日：2007-12-14
申请人： Kohji KANAMORI , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
发明人： Kohji KANAMORI , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
IPC分类号： H01L29/30
CPC分类号： H01L23/26 , H01L21/3221 , H01L23/3128 , H01L24/48 , H01L25/0657 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/12032 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
摘要翻译：根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。

3. 发明申请

US20050218490A1 Semiconductor storage device, semiconductor device, and manufacturing method therefor 有权
标题翻译：半导体存储装置，半导体装置及其制造方法
公开(公告)号：US20050218490A1
公开(公告)日：2005-10-06
申请号：US11078447
申请日：2005-03-14
申请人： Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
发明人： Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
IPC分类号： H01L27/10 , H01L21/322 , H01L21/52 , H01L21/58 , H01L23/26 , H01L23/31 , H01L23/58 , H01L29/00
CPC分类号： H01L23/26 , H01L21/3221 , H01L23/3128 , H01L24/48 , H01L25/0657 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/12032 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
摘要翻译：根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。

4. 发明授权

US07327019B2 Semiconductor device of a charge storage type 有权
标题翻译：电荷存储型半导体器件
公开(公告)号：US07327019B2
公开(公告)日：2008-02-05
申请号：US11078447
申请日：2005-03-14
申请人： Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
发明人： Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
IPC分类号： H01L23/20 , H01L23/02 , H01L23/053 , H01L23/12 , H01L23/14
CPC分类号： H01L23/26 , H01L21/3221 , H01L23/3128 , H01L24/48 , H01L25/0657 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/12032 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
摘要翻译：根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。

5. 发明申请

US20060180891A1 Semiconductor storage device, semiconductor device, and manufacturing method therefor 有权
标题翻译：半导体存储装置，半导体装置及其制造方法
公开(公告)号：US20060180891A1
公开(公告)日：2006-08-17
申请号：US11398534
申请日：2006-04-06
申请人： Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
发明人： Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
IPC分类号： H01L31/07 , H01L27/095 , H01L31/108 , H01L29/47 , H01L29/812
CPC分类号： H01L23/26 , H01L21/3221 , H01L23/3128 , H01L24/48 , H01L25/0657 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/12032 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
摘要翻译：根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。

6. 发明授权

US07790579B2 Semiconductor storage device, semiconductor device, and manufacturing method therefor 有权
标题翻译：半导体存储装置，半导体装置及其制造方法
公开(公告)号：US07790579B2
公开(公告)日：2010-09-07
申请号：US11398534
申请日：2006-04-06
申请人： Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
发明人： Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
IPC分类号： H01L21/322
CPC分类号： H01L23/26 , H01L21/3221 , H01L23/3128 , H01L24/48 , H01L25/0657 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/12032 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
摘要翻译：根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。

7. 发明授权

US06874922B2 Illumination device 失效
标题翻译：照明装置
公开(公告)号：US06874922B2
公开(公告)日：2005-04-05
申请号：US10317125
申请日：2002-12-12
申请人： Yoshihiro Matsuura , Tadanobu Iwasa , Akihiro Misawa , Yasumasa Tatewaki
发明人： Yoshihiro Matsuura , Tadanobu Iwasa , Akihiro Misawa , Yasumasa Tatewaki
IPC分类号： B60Q1/56 , F21V8/00 , G02B6/00 , G09F7/00
CPC分类号： B60Q1/56 , G02B6/005 , G02B6/0055 , G02B6/0081
摘要： The illumination device comprises at least one light source, and a light pipe positioned at the front side of a license plate, and a light diffusing means. A light of the light sources is led, the light pipe emitting a leading light from the surface of the license plate face. The light emitted from the observed face is diffused by the light diffusing means. The light diffusing means is provided with, rugged portions of an observed face opposite to a light emitting face, or, a light diffusing layer composed of two or more kinds of light transmitting materials, refractive indexes of which are different each other, on the observing face, and a light led from a light leading face is reflected and diffused on the light diffusing layer.
摘要翻译：照明装置包括至少一个光源和位于牌照前侧的光管和光漫射装置。光源的光被引导，光管从牌照面的表面发出引导光。从观察到的面发射的光被光扩散装置扩散。光漫射装置设置有与发光面相反的观察面的凹凸部分，或者由观察到的两个或更多种透光材料构成的光漫射层，折射率彼此不同，在观察并且从光引导面引导的光被反射并扩散在光漫射层上。

8. 发明授权

US06849950B1 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06849950B1
公开(公告)日：2005-02-01
申请号：US09604527
申请日：2000-06-27
申请人： Yoshihiro Matsuura
发明人： Yoshihiro Matsuura
IPC分类号： H01L23/12 , H01L21/52 , H01L21/58 , H01L21/60 , H01L23/14 , H01L23/28 , H01L23/498 , H01L21/30 , H01L21/46 , H01L23/48
CPC分类号： H01L24/83 , H01L23/49816 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/05026 , H01L2224/05147 , H01L2224/05155 , H01L2224/05571 , H01L2224/05573 , H01L2224/05644 , H01L2224/16237 , H01L2224/18 , H01L2224/2919 , H01L2224/32057 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2224/7565 , H01L2224/7665 , H01L2224/83192 , H01L2224/83385 , H01L2224/8385 , H01L2224/92 , H01L2224/92247 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/12041 , H01L2924/15311 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Before a semiconductor chip (2) is mounted on package board (5), an insulating layer (3) is formed on the reverse side of the semiconductor chip (2) for preventing insulation failures. If the insulating layer (3) is formed by applying an insulating film, then the insulating layer (3) reliably achieves a predetermined thickness for reliable electric insulation and can easily be formed. The semiconductor chip (2) with the insulating layer (3) formed thereon is fixed to the package board (5) which has surface interconnections (7) by an insulating adhesive (adhesive layer 4). The semiconductor chip (2) and the surface interconnections (7) are insulated from each other by the insulating layer (3). Therefore, the adhesive may be used in a minimum quantity. Since the semiconductor chip (2) can be pressed under an increased pressure, the semiconductor chip (2) is reliably joined to the package board (5). Surface irregularities existing on the surface of the package board (5) due to the surface interconnections (7) are filled up with and covered by the adhesive, leaving no gaps on the surface of the package board (5).
摘要翻译：在半导体芯片（2）安装在封装板（5）上之前，在半导体芯片（2）的背面形成绝缘层（3），以防止绝缘故障。如果通过施加绝缘膜形成绝缘层（3），则绝缘层（3）可靠地达到预定的厚度以便可靠的电绝缘并且可以容易地形成。其上形成有绝缘层（3）的半导体芯片（2）通过绝缘粘合剂（粘合剂层4）固定到具有表面互连（7）的封装板（5）。半导体芯片（2）和表面互连（7）通过绝缘层（3）彼此绝缘。因此，粘合剂可以以最小量使用。由于半导体芯片（2）可以在增加的压力下被按压，所以半导体芯片（2）可靠地接合到封装板（5）。由于表面互连（7）而在封装板（5）的表面上存在的表面凹凸被填充并被粘合剂覆盖，在封装板（5）的表面上不留下间隙。

9. 发明授权

US5528728A Speaker independent speech recognition system and method using neural network and DTW matching technique 失效
标题翻译：使用神经网络和DTW匹配技术的扬声器独立语音识别系统和方法
公开(公告)号：US5528728A
公开(公告)日：1996-06-18
申请号：US89825
申请日：1993-07-12
申请人： Yoshihiro Matsuura , Toby Skinner
发明人： Yoshihiro Matsuura , Toby Skinner
IPC分类号： G10L15/10 , G10L15/02 , G10L15/12 , G10L15/16 , G01L5/06 , G01L9/00
CPC分类号： G10L15/16 , G10L15/12
摘要： Improved speaker independent speech recognition system and method are disclosed in which an utterance by an unspecified person into an electrical signal is input through a device such as a telephone, the electrical signal from the input telephone converting the electrical signal into a time series of characteristic multidimensional vectors, the time series of characteristic multidimensional vectors are received, each of the vectors being converted into a plurality of candidates so that the plurality of phonemes constitutes a plurality of strings of phonemes in time series as a plurality of candidates, the plurality of candidates of phonemes are compared simultaneously (one at a time) with a reference pattern of a reference string of phonemes for each word previously stored in a dictionary to determine which string of phonemes derived from the phoneme recognition means has a highest similarity to one of the reference strings of the phonemes for the respective words stored in the dictionary using a predetermined word matching technique, and at least one candidate of the words as a result of word recognition on the basis of one of the plurality of the strings of phonemes which has the highest similarity to the corresponding one of the reference strings of the respective words is output as the result of speech recognition.
摘要翻译：公开了改进的与说话者无关的语音识别系统和方法，其中未指定的人进入电信号的话语通过诸如电话的设备输入，来自输入电话的电信号将电信号转换成时间序列的特征多维向量，接收特征多维向量的时间序列，每个矢量被转换成多个候选，使得多个音素以时间序列构成多个音素串作为多个候选，多个候选的将音素同时比较（一次一个））与先前存储在字典中的每个字的音素的参考串的参考图案，以确定从音素识别装置导出的哪个音素字符串与参考串之一具有最高的相似性的词汇存储在词典中的各个词使用预定的字匹配技术，以及作为词识别的结果的单词的至少一个候选，所述多个字符串与所述多个音素中的相应一个参考字符串具有最高相似性的音素中的一个作为语音识别的结果输出各个单词。

10. 发明授权

US5708372A Semiconductor device with electromagnetic radiation reduced 失效
标题翻译：具有电磁辐射的半导体器件减少
公开(公告)号：US5708372A
公开(公告)日：1998-01-13
申请号：US658411
申请日：1996-06-05
申请人： Hatsuhide Igarashi , Shigeru Takayama , Yoshihiro Matsuura , Hatsuhiro Nagaishi
发明人： Hatsuhide Igarashi , Shigeru Takayama , Yoshihiro Matsuura , Hatsuhiro Nagaishi
IPC分类号： H01L21/822 , G06F1/04 , H01L23/58 , H01L27/02 , H01L27/04 , H01L27/118 , H03K17/16
CPC分类号： H01L27/0218 , H01L27/118
摘要： In a semiconductor device in which power is supplied from an external power supply system, a first power supply system is connected to first terminals of power supply and ground and a digital inner circuit. The inner circuit includes a clock signal generating circuit, a driver for the clock signal, and circuits operating in response to the clock signal. A second power supply system is connected to second terminals of power supply and ground, the input terminal, the output terminal, and a digital interface circuit. The second power supply system is independent of the first power supply system. The interface circuit includes a MOS transistor for pulling up or down the input terminal and an output circuit which includes a MOS transistor driving an output terminal. The first power supply system is separated from the second power supply system, and the inner circuit is connected to the interface circuit through only signal lines.
摘要翻译：在从外部电源系统供电的半导体装置中，第一电源系统连接到电源和地的第一端子和数字内部电路。内部电路包括时钟信号发生电路，用于时钟信号的驱动器和响应于时钟信号工作的电路。第二电源系统连接到电源和地的第二端子，输入端子，输出端子和数字接口电路。第二电源系统独立于第一电源系统。接口电路包括用于上拉或下降输入端的MOS晶体管和包括驱动输出端的MOS晶体管的输出电路。第一电源系统与第二电源系统分离，内部电路仅通过信号线连接到接口电路。

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