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1. 发明授权

US06665154B2 Spin valve head with a current channeling layer 失效
标题翻译：旋转阀头带有电流通道层
公开(公告)号：US06665154B2
公开(公告)日：2003-12-16
申请号：US09931155
申请日：2001-08-17
申请人： Kochan Ju , You Feng Zheng , Rod Lee
发明人： Kochan Ju , You Feng Zheng , Rod Lee
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996
摘要： Spin valve heads with overlaid leads have several advantages over butted contiguous junction designs, including larger signal output and better head stability. However, in any overlaid design there is always present at least one high resistance layer between the GMR layer and the conductive leads. This leads to an effective read width that is greater than the actual physical width. This problem has been overcome by inserting a highly conductive channeling layer between the GMR stack and the conducting lead laminate. This arrangement ensures that, at the intersection between the leads and the GMR stack, virtually all the current moves out of the free layer into the leads thereby providing an effective read width for the device that is very close to the physical read width defined by the spacing between the two leads. A process for manufacturing the device is also described.
摘要翻译：具有覆盖引线的旋转阀头具有优于对接连接结设计的优点，包括较大的信号输出和更好的磁头稳定性。然而，在任何重叠的设计中，总是在GMR层和导电引线之间存在至少一个高电阻层。这导致有效的读宽度大于实际物理宽度。通过在GMR堆叠和导电铅层压板之间插入高度导电的沟道层已经克服了这个问题。这种布置确保了在引线和GMR堆叠之间的交叉点处，几乎所有的电流都从自由层移动到引线中，从而为非常接近于由两根导线之间的间距。还描述了用于制造该装置的方法。

2. 发明授权

US07106558B2 Biased spin valve head with canted adjacent layer and current channeling layer 失效
公开(公告)号：US07106558B2
公开(公告)日：2006-09-12
申请号：US10868713
申请日：2004-06-15
申请人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
发明人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B2005/3996
摘要： A magnetic read head with reduced side reading characteristics is described. This design combines use of a current channeling layer (CCL) with stabilizing longitudinal bias layers whose magnetization direction is canted relative to that of the free layer easy axis and that of the pinned layer (of the GMR). This provides several advantages: First, the canting of the free layer at the side region results in a reduction of side reading by reducing magnetic sensitivity in that region. Second, the CCL leads to a narrow current flow profile at the side region, therefore producing a narrow track width definition. A process for making this device is described. Said process allows some of the requirements for interface cleaning associated with prior art processes to be relaxed.

3. 发明授权

US06857180B2 Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor 失效
标题翻译：用于制造图案化合成纵向交换偏置GMR传感器的方法
公开(公告)号：US06857180B2
公开(公告)日：2005-02-22
申请号：US10104802
申请日：2002-03-22
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

4. 发明授权

US06816346B2 Ferromagnetic/antiferromagnetic bilayer, including decoupler, for longitudinal bias 失效
标题翻译：铁磁/反铁磁双层，包括去耦器，用于纵向偏置
公开(公告)号：US06816346B2
公开(公告)日：2004-11-09
申请号：US10791015
申请日：2004-03-02
申请人： You Feng Zheng , Kochan Ju , Cheng T. Horng , Simon Liao , Ru Ying Tong
发明人： You Feng Zheng , Kochan Ju , Cheng T. Horng , Simon Liao , Ru Ying Tong
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： As the dimensions of spin valve heads continue to be reduced, a number of difficulties are being encountered. One such is with the longitudinal bias when an external magnetic field can cause reversal of the hard magnet, thereby causing a hysteric response by the head. This coercivity reduction becomes more severe as the hard magnet becomes thinner. This problem has been overcome by inserting a decoupling layer between the antiferromagnetic layer that is used to stabilize the pinned layer of the spin valve itself and the soft ferromagnetic layer that is used for longitudinal biasing. This soft ferromagnetic layer is pinned by a second antiferromagnetic layer deposited on it on its far side away from the first antiferromagnetic layer. The presence of the decoupling layer ensures that the magnetization of the soft layer is determined only by the second antiferromagnetic layer. The inclusion of said decoupling layer allows more latitude in etch depth control during manufacturing.

5. 发明授权

US06721143B2 Ferromagnetic/antiferromagnetic bilayer, including decoupler, for longitudinal bias 失效
标题翻译：铁磁/反铁磁双层，包括去耦器，用于纵向偏置
公开(公告)号：US06721143B2
公开(公告)日：2004-04-13
申请号：US09933963
申请日：2001-08-22
申请人： You Feng Zheng , Kochan Ju , Cheng T. Horng , Simon Liao , Ru Ying Tong
发明人： You Feng Zheng , Kochan Ju , Cheng T. Horng , Simon Liao , Ru Ying Tong
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： As the dimensions of spin valve heads continue to be reduced, a number of difficulties are being encountered. One such is with the longitudinal bias when an external magnetic field can cause reversal of the hard magnet, thereby causing a hysteric response by the head. This coercivity reduction becomes more severe as the hard magnet becomes thinner. This problem has been overcome by inserting a decoupling layer between the antiferromagnetic layer that is used to stabilize the pinned layer of the spin valve itself and the soft ferromagnetic layer that is used for longitudinal biasing. This soft ferromagnetic layer is pinned by a second antiferromagnetic layer deposited on it on its far side away from the first antiferromagnetic layer. The presence of the decoupling layer ensures that the magnetization of the soft layer is determined only by the second antiferromagnetic layer. The inclusion of the decoupling layer allows more latitude in etch depth control during manufacturing.
摘要翻译：随着自旋阀头的尺寸不断减小，正在遇到许多困难。当外部磁场可能导致硬磁体的反转时，其中之一是具有纵向偏置，从而导致头部的歇斯底里响应。随着硬磁体变薄，矫顽力降低变得更严重。通过在用于稳定自旋阀本身的被钉扎层的反铁磁性层和用于纵向偏置的软铁磁层之间插入去耦层已经克服了这个问题。该软铁磁层由沉积在其上的远离第一反铁磁性层的远侧的第二反铁磁层固定。去耦层的存在确保了软层的磁化仅由第二反铁磁层确定。包含去耦层在制造过程中允许蚀刻深度控制的更大的纬度。

6. 发明授权

US07184248B2 Synthetic pattern exchange configuration for side reading reduction 有权
标题翻译：合成图案交换配置，用于减少边读数
公开(公告)号：US07184248B2
公开(公告)日：2007-02-27
申请号：US11264543
申请日：2005-11-01
申请人： Min Li , You Feng Zheng , Simon Liao , Kochan Ju
发明人： Min Li , You Feng Zheng , Simon Liao , Kochan Ju
IPC分类号： G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B32B15/01 , B32B15/018 , B82Y10/00 , B82Y40/00 , C21D1/04 , C22C30/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3263 , H01F10/3272 , H01F10/3295 , H01F41/308 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are obtained by satisfying a novel relationship between the magnetizations (M) of the ferromagnetic free layer (F1) and the ferromagnetic biasing layer (F2) which enables the optimal thicknesses of those layers to be determined for a wide range of ferromagnetic materials and exchange coupling materials. The relationship to be satisfied is MF2/MF1=(Js+Jex)/Js, where Js is the synthetic coupling energy between F1 and F2 and Jex is the exchange energy between F2 and an overlaying antiferromagnetic pinning layer. An alternative embodiment omits the overlaying antiferromagnetic pinning layer which causes the relationship to become MF2/MF1=1.
摘要翻译：提供了一种图案化，合成的纵向交换偏置GMR传感器，其具有窄的有效轨道宽度和减小的侧读数。通过满足强磁性自由层（F1）的磁化（M）和铁磁偏置层（F2）之间的新颖关系，能够确定这些层的最佳厚度，获得传感器的有利特性。的铁磁材料和交换耦合材料。要满足的关系是M＆lt; F2＆gt; /＆lt; F1＆gt; =＆lt; J＆gt; 其中J是F1和F2之间的合成耦合能量，并且J 2是在F2和覆盖的反铁磁钉扎层之间的交换能量。替代实施例省略了使得该关系变为M F2 / M F1 / 1的叠加反铁磁钉扎层。

7. 发明授权

US07010848B2 Synthetic pattern exchange configuration for side reading reduction 失效
标题翻译：合成图案交换配置，用于减少边读数
公开(公告)号：US07010848B2
公开(公告)日：2006-03-14
申请号：US10077064
申请日：2002-02-15
申请人： Min Li , You Feng Zheng , Simon Liao , Kochan Ju
发明人： Min Li , You Feng Zheng , Simon Liao , Kochan Ju
IPC分类号： G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B32B15/01 , B32B15/018 , B82Y10/00 , B82Y40/00 , C21D1/04 , C22C30/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3263 , H01F10/3272 , H01F10/3295 , H01F41/308 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are obtained by satisfying a novel relationship between the magnetizations (M) of the ferromagnetic free layer (F1) and the ferromagnetic biasing layer (F2) which enables the optimal thicknesses of those layers to be determined for a wide range of ferromagnetic materials and exchange coupling materials. The relationship to be satisfied is MF2/MF1=(Js+Jex)/Js, where Js is the synthetic coupling energy between F1 and F2 and Jex is the exchange energy between F2 and an overlaying antiferromagnetic pinning layer. An alternative embodiment omits the overlaying antiferromagnetic pinning layer which causes the relationship to become MF2/MF1=1.
摘要翻译：提供了一种图案化，合成的纵向交换偏置GMR传感器，其具有窄的有效轨道宽度和减小的侧读数。通过满足强磁性自由层（F 1）的磁化（M）和铁磁偏置层（F 2）之间的新颖关系，能够确定这些层的最佳厚度，从而获得传感器的有利特性。宽范围的铁磁材料和交换耦合材料。要满足的关系是M＆lt; F2＆gt; /＆lt; F1＆gt; =＆lt; J＆gt; 其中J 1是F 1和F 2之间的合成耦合能量，而J 2是在F 2和覆盖反铁磁之间的交换能量钉扎层。替代实施例省略了使得该关系变为M F2 / M F1 / 1的叠加反铁磁钉扎层。

8. 发明授权

US06776883B2 Process of manufacturing a magnetic read head 失效
标题翻译：制造磁读头的过程
公开(公告)号：US06776883B2
公开(公告)日：2004-08-17
申请号：US10100754
申请日：2002-03-19
申请人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
发明人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
IPC分类号： B05D512
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B2005/3996
摘要： A magnetic read head with reduced side reading characteristics is described. This design combines use of a current channeling layer (CCL) with stabilizing longitudinal bias layers whose magnetization direction is canted relative to that of the free layer easy axis and that of the pinned layer (of the GMR). This provides several advantages: First, the canting of the free layer at the side region results in a reduction of side reading by reducing magnetic sensitivity in that region. Second, the CCL leads to a narrow current flow profile at the side region, therefore producing a narrow track width definition. A process for making this device is described. Said process allows some of the requirements for interface cleaning associated with prior art processes to be relaxed.
摘要翻译：描述了具有减小的侧读取特性的磁读头。该设计结合了当前沟道层（CCL）与稳定纵向偏置层的使用，其稳定的纵向偏置层的磁化方向相对于自由层容易轴和固定层（GMR）的方向倾斜。这提供了几个优点：首先，通过降低该区域的磁敏感度，侧面区域的自由层的倾斜导致侧读数的减少。第二，CCL导致在侧面区域的窄电流流动分布，因此产生窄的轨道宽度定义。描述制造该设备的过程。所述方法允许放松与现有技术方法相关联的界面清洁的一些要求。

9. 发明授权

US06594124B2 Canted adjacent layer stabilized SV heads 失效
公开(公告)号：US06594124B2
公开(公告)日：2003-07-15
申请号：US09993402
申请日：2001-11-06
申请人： You Feng Zheng , Kochan Ju , Simon Liao
发明人： You Feng Zheng , Kochan Ju , Simon Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , Y10T428/11 , Y10T428/1121 , Y10T428/1171
摘要： An improved stabilization scheme for a GMR read head is described. Two important changes relative to prior art designs have been introduced. Instead of biasing by means of a permanent magnet or through exchange coupling with an antiferromagnetic layer, the magnetostatic field emanating from a nearby, but not contiguous, layer is used. Additionally, to obtain optimum stability with this scheme the bias, instead of running parallel to the easy axis of the free layer, is canted away from it towards the direction of the demagnetizing field of the pinned layer. A process for the manufacture of the structure is also described.

10. 发明授权

US07279269B2 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US07279269B2
公开(公告)日：2007-10-09
申请号：US10734422
申请日：2003-12-12
申请人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

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