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1. 发明专利

JP2008007824A Cylindrical target for pvd (physical vapor deposition) 有权
标题翻译：用于PVD（物理蒸气沉积）的圆柱体目标
公开(公告)号：JP2008007824A
公开(公告)日：2008-01-17
申请号：JP2006179874
申请日：2006-06-29
申请人： Kobe Steel Ltd , Nippon Piston Ring Co Ltd , 日本ピストンリング株式会社 , 株式会社神戸製鋼所
发明人： TAKAO TOSHIAKI , OKAZAKI TAKAHIRO , FUJII HIROBUMI
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423 , Y10T428/13 , Y10T428/1303 , Y10T428/1352 , Y10T428/1359 , Y10T428/139
摘要： PROBLEM TO BE SOLVED: To provide a cylindrical target for PVD capable of suppressing occurrence of any peel or crack of an evaporation material caused by the residual stress exerted in a boundary part between a base material and the evaporation material due to the difference in thermal expansion, and ensuring sufficient adhesiveness of both materials to each other. SOLUTION: In the cylindrical target 1 for PVD in which an evaporation material 3 is coated on an outer circumferential surface of a cylindrical base material 2, a boundary part 4 between the base material 2 and the evaporation material 3 has an engagement part 5 composed of both or any one of a projecting shape and a recessed shape formed by rounding a corner part. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种能够抑制由于差异引起的基材和蒸发材料之间的边界部分中产生的残留应力引起的蒸发材料的任何剥离或裂纹的PVD的圆柱形目标物并且确保两种材料彼此的充分粘合性。解决方案：在圆筒形基材2的外圆周表面上涂覆有蒸发材料3的PVD圆柱形靶1中，基材2和蒸发材料3之间的边界部分4具有接合部分 5由通过使角部圆角化而形成的突出形状和凹形形状中的任一个或任一个构成。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2005226117A Hard film having excellent wear resistance, and its production method 有权
标题翻译：具有优异耐磨性的硬膜及其生产方法
公开(公告)号：JP2005226117A
公开(公告)日：2005-08-25
申请号：JP2004035474
申请日：2004-02-12
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： YAMAMOTO KENJI , KUJIME SUSUMU , TAKAHARA KAZUKI , FUJII HIROBUMI
IPC分类号： B23B27/14 , B23P15/28 , C23C14/06 , C23C14/22
摘要： PROBLEM TO BE SOLVED: To provide a hard film having more excellent wear resistance and lubricity than those of the conventional hard film, and to provide its production method.
SOLUTION: In such a manner that the respective film thicknesses dA and dB of a layer A having a chemical composition satisfying the expression (1) and a layer B having a chemical composition satisfying the expression (2) satisfy the expression (3), the layer A and layer B are alternately stacked on a substrate to form a film: The film layer A: Cr(B
a C
b N
1-a-b-c O
c )
e ; wherein, 0≤a≤0.15, 0≤b≤0.3, 0≤c≤0.1, and 0.2≤e≤1.1 (1), the layer B: B
1-s-t CsNt; wherein, 0≤s≤0.25, and (1-s-t)/t≤1.5 (2), and dB/dA≤0.5, 0.5 nm≤dB, and dA≤200 nm (3).
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有比常规硬膜更优异的耐磨性和润滑性的硬膜，并提供其制造方法。解决方案：使得具有满足式（1）的化学组成的层A和满足式（2）的化学组成的层B的各自的膜厚dA和dB满足式（3）），层A和层B交替堆叠在基板上以形成膜：膜层A：Cr（B S N ABC 0 C ）电子; 其中，0≤a≤0.15,0≤b≤0.3,0≤c≤0.1,0.2≤e≤1.1（1），层B：B 1-s-t CsNt; 其中，0≤s≤0.25，（1-s-t）/t≤1.5（2），dB /dA≤0.5,0.5nm≤dB，dA≤200nm（3）。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2014173132A Pvd treatment device 审中-公开
标题翻译： PVD处理装置
公开(公告)号：JP2014173132A
公开(公告)日：2014-09-22
申请号：JP2013046626
申请日：2013-03-08
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： FUJII HIROBUMI
IPC分类号： C23C14/24
摘要： PROBLEM TO BE SOLVED: To provide a PVD treatment device that can secure a sufficient work space and make a power supply cable as short in length as possible.SOLUTION: A PVD treatment device 1 includes: a housing type vacuum chamber 2 provided with doors 6, 7 on mutually opposite side faces rotatably by hinge parts 8a, 8b respectively; electrodes 4 provided for the doors 6, 7 respectively; and a power supply part 3 which is arranged outside side faces of the vacuum chamber 2 where the doors 6, 7 are not provided and supplies electric power to the electrodes 4, power supply cables 5 extending from the power supply part 3 being extended from respective hinge part sides of the doors 6, 7 to the electrodes 4 so as to supply electric power. A hinge part which pivotally supports one of the doors 6, 7, provided on the opposite side faces respectively, rotatably on a vertical axis and a hinge part which pivotally supports the other door rotatably on a vertical axis are arranged at different positions in a vertical projection on a plane parallel with the doors 6, 7.
摘要翻译：要解决的问题：提供一种能够确保足够的工作空间并使电源电缆尽可能短的PVD处理装置。解决方案：PVD处理装置1包括：设置有门6的壳体型真空室2 ，7分别由铰链部分8a，8b可旋转地相互相对的侧面; 分别设置在门6,7上的电极4; 以及电源部3，其设置在不设置门6,7的真空室2的外侧面，并且向电极4供给电力，电源电缆5从电源部3延伸出来，将门6,7的铰链部分侧面连接到电极4，以便供电。铰链部分，其枢转地支撑在彼此相对的侧面上的一对门6,7，其可旋转地位于垂直轴线上，并且铰链部分以可垂直方式可枢转地支撑另一个门的铰链部分布置在垂直方向上的不同位置在平行于门6,7的平面上的突起。

4. 发明专利

JP2014114507A Film deposition apparatus 有权
标题翻译：胶片沉积装置
公开(公告)号：JP2014114507A
公开(公告)日：2014-06-26
申请号：JP2013234952
申请日：2013-11-13
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： FUJII HIROBUMI
IPC分类号： C23C14/24
CPC分类号： C23C14/243 , C23C14/0641 , C23C14/24 , C23C14/32 , C23C14/352 , C23C14/505
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can provide a substrate with a coating having substantially uniform film thickness.SOLUTION: A film deposition apparatus 1 according to this invention includes: a vacuum chamber 2 accommodating a substrate W; evaporation sources 4 provided on an internal surface of the vacuum chamber 2; and a substrate holding part 6 on which the substrate W is disposed and which holds the disposed substrate W, and performs PVD treatment to the surface of the substrate W. In the film deposition apparatus 1, multiple of the evaporation source 4 are disposed in a direction L which is vertical to a transfer direction of the substrate holding part 6. At least one of first evaporation sources 4a and 4d among the disposed multiple of the evaporation source 4, which are disposed at two ends in the direction L which is vertical to the transfer direction of the substrate holding part 6, is disposed so as to protrude to the substrate W side from second evaporation sources 4b and 4c which are adjacent to the first evaporation source 4a in the direction L vertical to the transfer direction of the substrate holding part 6.
摘要翻译：要解决的问题：提供一种能够为基材提供具有基本均匀的膜厚度的涂层的成膜装置。解决方案：根据本发明的成膜装置1包括：容纳基板W的真空室2; 设置在真空室2的内表面上的蒸发源4; 以及基板保持部6，基板W配置在基板保持部6上并保持配置基板W，并对基板W的表面进行PVD处理。在成膜装置1中，将多个蒸发源4配置在方向L，其垂直于基板保持部分6的传送方向。在蒸发源4的设置倍数中的至少一个第一蒸发源4a和4d，其设置在垂直于衬底保持部6的传送方向被设置成从与第一蒸发源4a相邻的第二蒸发源4b和4c向垂直于衬底保持部6的传送方向的方向L突出到衬底W侧第6部分。

5. 发明专利

JP2010275625A Arc-type evaporation source with high film-forming rate, and method for producing coating film using the arc-type evaporation source 有权
标题翻译：具有高成膜速率的ARC型蒸发源，以及使用ARC型蒸发源生产涂膜的方法
公开(公告)号：JP2010275625A
公开(公告)日：2010-12-09
申请号：JP2010024315
申请日：2010-02-05
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TANIFUJI SHINICHI , YAMAMOTO KENJI , FUJII HIROBUMI , KUROKAWA YOSHINORI
IPC分类号： C23C14/32 , C23C14/35
CPC分类号： C23C14/325 , C23C14/54 , H01J37/32055 , H01J37/32669 , H01J37/34 , H01J37/345
摘要： PROBLEM TO BE SOLVED: To increase the film-forming rate of an arc-type evaporation source by guiding a magnetic line toward a substrate direction. SOLUTION: The arc-type evaporation source has one or a plurality of circumferential magnets 3 arranged so as to surround the periphery of a target 2 and so that a magnetization direction can be parallel to a direction perpendicular to the surface of the target 2, and has a back magnet 4 arranged on the back side of the target 2. The back magnet 4 has a first non-ring-shaped permanent magnet 4A arranged so that the polarity points the same direction as that of the circumferential magnet 3 and the magnetization direction is parallel to the direction perpendicular to the surface of the target 2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过将磁线引向基板方向来提高电弧型蒸发源的成膜速度。解决方案：电弧型蒸发源具有一个或多个周向磁体3，其周围设置为围绕靶2的周边，并且使得磁化方向可以平行于与靶的表面垂直的方向背面磁体4具有第一非环形永久磁铁4A，其极性指向与圆周磁体3相同的方向，并且磁化方向平行于垂直于目标2表面的方向。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2003301266A Rod-shaped evaporation source for arc ion plating 有权
标题翻译：用于ARC离子镀层的ROD形状蒸发源
公开(公告)号：JP2003301266A
公开(公告)日：2003-10-24
申请号：JP2002109373
申请日：2002-04-11
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： FUJII HIROBUMI , SHIMOJIMA KATSUHIKO
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a rod-shaped evaporation source for arc ion plating, which hardly causes unevenness of temperature and crackings even when passing a large current, and does not cause leakage of a refrigerant such as water even if the cracking has occurred.
SOLUTION: The rod-shaped evaporation source for the arc ion plating has a structure which cools the inside of a cylindrical target 1 by supplying and exhausting a cooling medium to and from a hollow center of the cylindrical target 1. The cylindrical target 1 comprises a cylindrical target material 4, a metal pipe 2 inserted into the hollow center of the cylindrical target material 4, and an elastic metal spring 3 (a supporting member) superior in heat transfer characteristics, which exists between an internal circumferential face of the hollow center of the cylindrical target material 4 and the outer circumferential face of the metal tube 2.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供一种用于电弧离子电镀的棒状蒸发源，即使在流过大电流时也几乎不引起温度和开裂的不均匀性，并且不会导致诸如水的制冷剂的泄漏，即使发生破裂。解决方案：用于电弧离子镀的棒状蒸发源具有通过向圆柱形靶1的中空中心供给和排出冷却介质来冷却圆筒形靶1的内部的结构。圆柱形靶 1包括圆柱形目标材料4，插入圆柱形靶材4的中空中心的金属管2和传导特性优异的弹性金属弹簧3（支撑构件），其存在于圆柱形目标材料4的中空中心和金属管2的外周面。版权所有（C）2004，JPO

7. 发明专利

JP2015038249A 成膜速度が速いアーク式蒸発源及びこのアーク式蒸発源を用いた皮膜の製造方法有权
标题翻译：具有高沉积速率的ARC蒸发源和使用ARC蒸发源生产涂料的方法
公开(公告)号：JP2015038249A
公开(公告)日：2015-02-26
申请号：JP2014196691
申请日：2014-09-26
申请人：株式会社神戸製鋼所 , Kobe Steel Ltd
发明人： TANIFUJI SHINICHI , YAMAMOTO KENJI , FUJII HIROBUMI , KUROKAWA YOSHINORI
IPC分类号： C23C14/32 , C23C14/06
摘要：【課題】アーク式蒸発源において、磁力線を基板方向に誘導して成膜速度を速くする。【解決手段】ターゲット2の外周を取り囲んでいて磁化方向がターゲット表面と直交する方向に沿うように配置された1又は複数の外周磁石3と、ターゲット2の背面側に配置された背面磁石4Aとを備え、背面磁石4Aは、極性が外周磁石3と同方向で且つ磁化方向がターゲット表面と直交する方向に沿うように配置されている非リング状の第1の永久磁石を有していて、背面磁石4Aは、第1の永久磁石とターゲット2の間、もしくは、第1の永久磁石の背面側に、第1の永久磁石と間隔を空けて配置された非リング状の第2の永久磁石をさらに有し、第2の永久磁石は、極性が外周磁石3と同方向で且つ磁化方向がターゲット表面と直交する方向に沿うように配置されているアーク式蒸発源。【選択図】図12
摘要翻译：要解决的问题：通过在电弧蒸发源中向衬底引入磁通线来提高沉积速率。解决方案：电弧蒸发源包括：一个或多个外周磁体3，其被布置成围绕电弧蒸发源的外周目标2并且具有沿着与目标表面正交的方向延伸的磁化方向; 以及配置在靶材2的背面侧的背面磁铁4A。背面磁铁4A具有：具有与外周磁体3相同方向的极性的第一非环状永久磁铁，被布置成使得其磁化方向沿着与目标表面正交的方向延伸; 和非环形的第二永久磁铁，其布置在第一永磁体和目标2之间或第一永磁体的后侧上并且与第一磁体间隔开。第二永久磁铁具有与外周磁体3相同的方向的极性，并且被布置成使得其磁化方向沿着与目标表面正交的方向延伸。

8. 发明专利

JP2014181385A Pvd treatment apparatus and pvd treatment method 有权
标题翻译： PVD处理设备和PVD处理方法
公开(公告)号：JP2014181385A
公开(公告)日：2014-09-29
申请号：JP2013056771
申请日：2013-03-19
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： FUJII HIROBUMI
IPC分类号： C23C14/50
CPC分类号： C23C14/505 , C23C14/325 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To deposit a composite coating film having uniform thickness in a circumferential direction on an outer peripheral surface of a substrate when the composite coating film is deposited by rotation/revolution of the substrate.SOLUTION: A PVD treatment apparatus 1 according to the invention includes: a vacuum chamber 2; a revolution table 3 rotating plural substrates W around a revolution shaft 7 provided in the vacuum chamber 2; a rotation table 4 rotating the substrate W around a rotation shaft 8 parallel to the revolution shaft 7 on the revolution table 3; plural targets 5 which are disposed at distances each other in a circumferential direction and in the outside of the diameter of the revolution table 3, and are formed by deposition material which are different each other in type. The PVD treatment apparatus 1 has a table rotation mechanism 6 which rotates the rotation table 4 with the substrate W loaded over an angle of 180° or more to the revolution table 3 when the substrate W passes through between two tangent lines L1 and L2, which are drawn from each center of the multiple target 5 to a circumscribed circle of the revolution table 3.
摘要翻译：要解决的问题：通过旋转/旋转沉积复合涂膜时，在基板的外周面上沉积具有在圆周方向上具有均匀厚度的复合涂膜。解决方案：根据本发明包括：真空室2; 围绕设置在真空室2中的旋转轴7旋转多个基板W的转台3; 旋转台4，使基板W围绕与旋转平台3上的旋转轴7平行的旋转轴8旋转; 在旋转台3的圆周方向和外侧彼此间隔设置的多个靶5，由相互不同的沉积材料形成。 PVD处理装置1具有工作台旋转机构6，当基板W穿过两条切线L1和L2之间时，旋转台4使基板W以180°以上的角度旋转到旋转台3，旋转台4 从多个目标5的每个中心拉出到旋转台3的外接圆。

9. 发明专利

JP2014077177A Film deposition apparatus 有权
标题翻译：胶片沉积装置
公开(公告)号：JP2014077177A
公开(公告)日：2014-05-01
申请号：JP2012226268
申请日：2012-10-11
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： FUJII HIROBUMI , YUKI TAKAHIRO
IPC分类号： C23C14/32
CPC分类号： C23C14/32 , C23C14/0641 , C23C14/564
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can suppress temperature rising of a base material effectively with a simple structure not causing production cost increasing.SOLUTION: A film deposition apparatus comprises a vacuum chamber 1, an evaporation source 3 mounted in the vacuum chamber 1, a work table 2 carrying plural works W and rotating the plural works W around the evaporation source 3. PVD processing on surfaces of the works W is implemented by evaporating the evaporation source 3. Shield plates 4 included are arranged intermittently between the plural works, are rotated with the works W around the evaporation source 3 by the work table 2, and capture evaporation particles which, among evaporation particles evaporated from the evaporation source 3, move towards the vacuum chamber 1.
摘要翻译：要解决的问题：提供一种能够以不会导致生产成本增加的简单结构来有效抑制基材的升温的成膜装置。解决方案：一种成膜装置，包括真空室1，安装在所述蒸发源3中的蒸发源3 真空室1，工作台2，其承载多个工件W，并使多个工件W围绕蒸发源3旋转。通过蒸发蒸发源3来实现工件W的表面上的PVD处理。包括的屏蔽板4间歇地布置在多个作品通过工作台2与工件W一起在蒸发源3周围旋转，并且捕获从蒸发源3蒸发的蒸发颗粒中朝向真空室1移动的蒸发颗粒。

10. 发明专利

JP2007138286A Arc ion plating apparatus 有权
标题翻译： ARC离子镀设备
公开(公告)号：JP2007138286A
公开(公告)日：2007-06-07
申请号：JP2006255145
申请日：2006-09-21
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TAMAGAKI HIROSHI , FUJII HIROBUMI , MIYAMOTO RYOJI , OKIMOTO TADAO
IPC分类号： C23C14/32 , C23C14/02
摘要： PROBLEM TO BE SOLVED: To provide an arc ion plating apparatus where over temperature rise or abnormal discharge is hardly caused in the substrate upon bombardment, and process controllability is enhanced. SOLUTION: An arc ion plating apparatus comprises a vacuum chamber 1, a rotary table 2 for moving a substrate within the vacuum chamber vertically relative to its height direction, an arc evaporation source 9A for bombardment for cleaning the surface of the substrate with metal ions, and a plurality of evaporation sources 7A for deposition for depositing metal ions on the surface of the substrate. The arc evaporation source 9A for bombardment is formed so that the height of the evaporation face or the evaporation surface area thereof is larger than the cases of the evaporation sources 7A for deposition. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种电弧离子镀装置，其在轰击时在基板上几乎不引起过度升温或异常放电，并且提高了工艺可控性。解决方案：电弧离子镀装置包括真空室1，用于使真空室内的基板相对于其高度方向垂直移动的旋转台2，用于轰击基板表面的电弧蒸发源9A，金属离子，以及用于在基板的表面上沉积金属离子的多个蒸发源7A。用于轰击的电弧蒸发源9A形成为使得蒸发面的高度或其蒸发表面积大于用于沉积的蒸发源7A的情况。版权所有（C）2007，JPO＆INPIT

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