会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 8. 发明申请
    • SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES
    • US20130146858A1
    • 2013-06-13
    • US13809946
    • 2011-07-19
    • Timo Meyer-FriedrichsenKnud ReuterAndreas ElschnerMarcus Halik
    • Timo Meyer-FriedrichsenKnud ReuterAndreas ElschnerMarcus Halik
    • H01L51/00
    • H01L51/0074C07D495/04C07F9/655354H01L51/0002H01L51/0558Y02E10/549Y02P70/521
    • The present invention relates to compounds of the general formula (I) wherein Z corresponds a to — a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups—P(O) (OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHal−nR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), or — a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).
    • 10. 发明申请
    • PROCESSES FOR PREPARING NIOBIUM ALKOXIDES, AND NIOBIUM ALKOXIDES PREPARED THEREBY
    • 制备铌酸钾的方法和制备的铌酸铋
    • US20080071102A1
    • 2008-03-20
    • US11855219
    • 2007-09-14
    • Knud Reuter
    • Knud Reuter
    • C07F9/00
    • C07C29/80C07C29/88C07C31/28
    • Processes for preparing high-purity niobium alkoxides, especially niobium ethoxide, are described which include: (a) providing a crude niobium alkoxide starting material comprising at least one compound of the general formula (I) Nb(OR)5   (I) wherein each R independently represents a linear or branched C1-12 alkyl group; and (b) contacting the crude niobium alkoxide starting material with a treatment medium comprising a component selected from the group consisting of (i) one or more alcohols of the general formula (II) in an amount of 0.01 to 5% by weight, (ii) air or an oxygen-containing gas, and (iii) combinations thereof; R1OH   (II) wherein each R1 independently represents a linear or branched C1-12 alkyl group.
    • 描述了制备高纯度铌醇盐,特别是铌乙醇盐的方法,其包括:(a)提供粗制的铌醇盐起始材料,其包含至少一种通式(I)的化合物, 在线公式“end =”lead“?> Nb(OR)5(I)<?in-line-formula description =”In-line Formulas“end =”tail“?>其中 每个R独立地表示直链或支链C 1-12烷基; 和(b)将粗铌醇盐起始原料与包含选自(i)一种或多种通式(II)的醇的组分的处理介质接触,其量为0.01至5重量%(( ii)空气或含氧气体,和(iii)其组合; <?in-line-formula description =“In-line Formulas”end =“lead”?> R <1> OH(II)<?in-line-formula description =“In-line Formulas” 末端=“尾”→其中每个R 1独立地表示直链或支链C 1-12烷基。