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    • 3. 发明授权
    • Novel gallium arsenide precursor and low temperature method of preparing
gallium arsenide therefrom
    • 新型砷化镓前体和低温砷化镓的制备方法
    • US4902486A
    • 1990-02-20
    • US307995
    • 1989-02-09
    • Klaus H. TheopoldErin K. Byrne
    • Klaus H. TheopoldErin K. Byrne
    • C07F9/70C22C1/00
    • C07F9/703C22C1/007
    • A novel gallium arsenide precursor has the formula R.sub.2 GaAs(SiR').sub.2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylcyclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20.degree. to 60.degree. C., preferably at room temperature, under water free conditions to form solid gallium arsenide and byproducts which are liquid under the reaction conditions. The gallium arsenide forming reaction may be aided by a catalyst providing amount of a substance which is considered to react with excess alcohol reactant to generate a catalytic amount of HCl, e.g., (CH.sub.3).sub.3 SiCl or [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n wherein R is pentamethylcyclopentadienyl and R' is methyl and in solution in benzene n is 1 and 3.
    • 一种新型的砷化镓前体具有式R2GaAs(SiR')2,其中R选自烷基取代的脂环族基团和烷基取代的芳族基团,R'是烷基。 优选地,R是五甲基环戊二烯基,R'是甲基。 在无水条件下,将该前体与醇,优选乙醇或叔丁醇在-20至60℃,优选室温下反应,形成固体砷化镓和在反应下为液体的副产物 条件。 可以通过提供量的被认为与过量醇反应物反应以产生催化量的HCl,例如(CH 3)3 SiCl或[R(Cl)GaAs(SiR'3)]的物质来辅助形成砷化镓的反应 )2] n其中R是五甲基环戊二烯基,R'是甲基,在苯n的溶液中是1和3。
    • 5. 发明授权
    • [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n
    • [R(Cl)GaAs(SiR'3)2] n
    • US4980490A
    • 1990-12-25
    • US445035
    • 1989-12-04
    • Klaus H. TheopoldErin K. Byrne
    • Klaus H. TheopoldErin K. Byrne
    • C07F9/70C22C1/00
    • C07F9/703C22C1/007
    • A novel gallium arsenide precursor has the formula R.sub.2 GaAs(SiR').sub.2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylcyclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20.degree. C. to 60.degree. C., preferably at room temperature, under water free conditions to form solid gallium arsenide and by-products which are liquid under the reaction conditions. The gallium arsenide forming reaction may be aided by a catalyst providing amount of a substance which is considered to react with excess alcohol reactant to generate a catalytic amount of HCl, e.g., (CH.sub.3).sub.3 SiCl or [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n wherein R is pentamethylcyclopentadienyl and R' is methyl and in solution in benzene n is 1 and 3.
    • 一种新型的砷化镓前体具有式R2GaAs(SiR')2,其中R选自烷基取代的脂环族基团和烷基取代的芳族基团,R'是烷基。 优选地,R是五甲基环戊二烯基,R'是甲基。 在无水条件下,将前体与醇,优选乙醇或叔丁醇在-20℃至60℃的温度下反应,优选在室温下反应,形成固体砷化镓和副产物, 液体在反应条件下。 可以通过提供量的被认为与过量醇反应物反应以产生催化量的HCl,例如(CH 3)3 SiCl或[R(Cl)GaAs(SiR'3)]的物质来辅助形成砷化镓的反应 )2] n其中R是五甲基环戊二烯基,R'是甲基,在苯n的溶液中是1和3。