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JP2012248535A Device and method for forming conductive passage through insulating layer 有权
标题翻译：通过绝缘层形成导电通道的装置和方法
公开(公告)号：JP2012248535A
公开(公告)日：2012-12-13
申请号：JP2012116119
申请日：2012-05-22
申请人： Kla-Tencor Corp , ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation
发明人： THOMAS PLETTNER , MEHRAN NACEL-GOSH , ROBERT HEINES , RUDY GARCIA
IPC分类号： H01J37/20 , H01L21/66
CPC分类号： H01L21/743
摘要： PROBLEM TO BE SOLVED: To electrically ground a substrate through an insulating layer on a surface of the substrate by nondestructive method.SOLUTION: It relates to a device for forming a conductive passage through an insulating layer on a surface of a substrate. A first radiation source is arranged so as to emit radiation to a first region of the insulating layer and a first electric contact is arranged so as to apply a first bias voltage to the first region. A second radiation source is arranged so as to emit radiation to a second region of the insulating layer and a second electric contact is arranged so as to apply a second bias voltage to the second region. Conductivity of the regions is increased by radiation such that a conduction passage is formed through the insulating layer in the regions. In an embodiment, the device can be used in an electron beam apparatus. Another embodiment relates to a method for forming the conductive passage through the insulating layer.
摘要翻译：要解决的问题：通过非破坏性方法将衬底电绝缘在衬底表面上的绝缘层。解决方案：涉及用于形成通过基板表面上的绝缘层的导电通路的装置。第一辐射源被布置成向绝缘层的第一区域发射辐射，并且布置第一电触点以便向第一区域施加第一偏置电压。第二辐射源被布置成将辐射发射到绝缘层的第二区域，并且布置第二电触点以便向第二区域施加第二偏置电压。通过辐射增加区域的电导率，使得通过该区域中的绝缘层形成传导通道。在一个实施例中，该装置可以用在电子束装置中。另一实施例涉及一种用于形成穿过绝缘层的导电通路的方法。版权所有（C）2013，JPO＆INPIT

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