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1. 发明申请

US20120235699A1 TEST CARRIER 有权
标题翻译：测试载体
公开(公告)号：US20120235699A1
公开(公告)日：2012-09-20
申请号：US13502655
申请日：2010-05-10
申请人： Kiyoto Nakamura , Yoshinari Kogure
发明人： Kiyoto Nakamura , Yoshinari Kogure
IPC分类号： G01R31/26 , G01R31/00
CPC分类号： G01R31/2893 , G01R31/2891 , H01L21/6835 , H01L23/544 , H01L24/81 , H01L2223/5442 , H01L2223/54426 , H01L2224/81121 , H01L2224/81801 , H01L2924/01019 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , Y10T29/4913 , Y10T29/49131 , Y10T29/53174 , Y10T29/53183 , H01L2924/00
摘要： A test carrier includes a base member and a cover member between which a die is interposed. The base film of the base member has: first interconnect patterns which are formed in advance; and a printing region where second interconnect patterns which electrically connect to the first interconnect patterns are to be formed by printing.
摘要翻译：一种测试载体包括一个基底构件和一个盖构件，模具插在其间。基体的基膜具有：预先形成的第一互连图案; 以及通过印刷形成电连接到第一布线图案的第二布线图案的印刷区域。

2. 发明授权

US09030223B2 Test carrier 有权
标题翻译：测试载体
公开(公告)号：US09030223B2
公开(公告)日：2015-05-12
申请号：US13502655
申请日：2010-05-10
申请人： Kiyoto Nakamura , Yoshinari Kogure
发明人： Kiyoto Nakamura , Yoshinari Kogure
IPC分类号： G01R31/26 , G01R31/28 , H01L21/683 , H01L23/544 , H01L23/00
CPC分类号： G01R31/2893 , G01R31/2891 , H01L21/6835 , H01L23/544 , H01L24/81 , H01L2223/5442 , H01L2223/54426 , H01L2224/81121 , H01L2224/81801 , H01L2924/01019 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , Y10T29/4913 , Y10T29/49131 , Y10T29/53174 , Y10T29/53183 , H01L2924/00
摘要： A test carrier includes a base member and a cover member between which a die is interposed. The base film of the base member has: first interconnect patterns which are formed in advance; and a printing region where second interconnect patterns which electrically connect to the first interconnect patterns are to be formed by printing.
摘要翻译：一种测试载体包括一个基底构件和一个盖构件，模具插在其间。基体的基膜具有：预先形成的第一互连图案; 以及通过印刷形成电连接到第一布线图案的第二布线图案的印刷区域。

3. 发明授权

US08850907B2 Test carrier 有权
标题翻译：测试载体
公开(公告)号：US08850907B2
公开(公告)日：2014-10-07
申请号：US13103142
申请日：2011-05-09
申请人： Kiyoto Nakamura , Yoshinari Kogure
发明人： Kiyoto Nakamura , Yoshinari Kogure
IPC分类号： G01D21/00 , G01R1/04 , G01R31/00 , G01R31/20
CPC分类号： G01R1/0408
摘要： [Problem] A test carrier able to secure a high air-tightness is provided.[Solution] A test carrier 10 comprises a cover member 50A and a base member 20A which are bonded together while sandwiching a die 90 between them. ultraviolet rays can pass through the cover member 50A.
摘要翻译： [问题]提供了能够确保高气密性的测试载体。 [解决方案]测试托架10包括盖构件50A和基座构件20A，它们在它们之间夹住模具90时结合在一起。紫外线可以通过盖构件50A。

4. 发明授权

US08994394B2 Test carrier 有权
标题翻译：测试载体
公开(公告)号：US08994394B2
公开(公告)日：2015-03-31
申请号：US13448911
申请日：2012-04-17
申请人： Yoshinari Kogure , Takashi Fujisaki , Kiyoto Nakamura
发明人： Yoshinari Kogure , Takashi Fujisaki , Kiyoto Nakamura
IPC分类号： G01R31/00 , G01R1/04 , G01R31/28
CPC分类号： G01R1/0408 , G01R31/2893
摘要： A test carrier includes a film-shaped base film which has first bumps which contact test pads of a die; and a cover film which is superposed over the base film, and the test carrier holds the die between the base film and the cover film. The first bumps are relatively higher than second bumps which the die has.
摘要翻译：测试载体包括膜状基膜，其具有与模具的测试焊盘接触的第一凸块; 以及覆盖在所述基膜上的覆盖膜，所述测试载体将所述模具保持在所述基膜和所述覆盖膜之间。第一凸起相对高于模具具有的第二凸块。

5. 发明授权

US08970243B2 Test carrier and board assembly 有权
标题翻译：测试载体和电路板组件
公开(公告)号：US08970243B2
公开(公告)日：2015-03-03
申请号：US13448839
申请日：2012-04-17
申请人： Yoshinari Kogure , Takashi Fujisaki , Kiyoto Nakamura
发明人： Yoshinari Kogure , Takashi Fujisaki , Kiyoto Nakamura
IPC分类号： G01R31/00 , G01R1/04 , G01R31/28
CPC分类号： G01R1/0408 , G01R31/2893 , H01L2224/16235
摘要： A test carrier 10A comprises: a base board 21A which holds a die 90; and a cover board 31A which is laid over the base board 21A so as to cover the die 90. The test carrier 10A comprises a seal member 24 which is interposed between the base board 21A and the cover board 31A and which surrounds the die 90.
摘要翻译：测试载体10A包括：保持模具90的基板21A; 以及覆盖基板21A以覆盖模具90的盖板31A。试验载体10A包括密封构件24，该密封构件24插入在基板21A和盖板31A之间并且围绕模具90。

6. 发明授权

US5793109A Structure of ohmic electrode for semiconductor by atomic layer doping 失效
标题翻译：通过原子层掺杂的半导体欧姆电极的结构
公开(公告)号：US5793109A
公开(公告)日：1998-08-11
申请号：US703105
申请日：1996-08-26
申请人： Kiyoto Nakamura
发明人： Kiyoto Nakamura
IPC分类号： H01L21/28 , H01L21/285 , H01L29/43 , H01L29/45 , H01L23/48 , H01L27/095 , H01L29/20 , H01L31/0257
CPC分类号： H01L29/452 , H01L21/28575
摘要： An ohmic contact electrode for a semiconductor device which has a low contact resistance and high stability. The ohmic contact electrode includes: a semiconductor substrate; an atomic doping layer developed on the semiconductor substrate wherein the atomic doping layer is formed by doping impurities such that an energy level of the layer is higher than a Fermi level; a semiconductor layer developed on the atomic doping layer wherein the semiconductor layer is formed of the same material as in the semiconductor substrate; a metal electrode formed on the semiconductor layer for establishing an electric connection with the semiconductor substrate; wherein the semiconductor layer has a thickness sufficient for carriers to transfer between the metal electrode and the atomic doping layer by tunneling through the semiconductor layer.
摘要翻译：一种具有低接触电阻和高稳定性的用于半导体器件的欧姆接触电极。欧姆接触电极包括：半导体衬底; 在半导体衬底上显影的原子掺杂层，其中通过掺杂杂质形成原子掺杂层，使得该层的能级高于费米能级; 在原子掺杂层上形成的半导体层，其中半导体层由与半导体衬底相同的材料形成; 形成在所述半导体层上用于与所述半导体衬底建立电连接的金属电极; 其中半导体层具有足以使载流子穿过半导体层在金属电极和原子掺杂层之间转移的厚度。

7. 发明申请

US20090184728A1 CONTACT DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：接触装置及其制造方法
公开(公告)号：US20090184728A1
公开(公告)日：2009-07-23
申请号：US12174645
申请日：2008-07-17
申请人： Kiyoto Nakamura , Hiroshi Arikawa , Yoshiaki Moro , Hirokazu Sampei
发明人： Kiyoto Nakamura , Hiroshi Arikawa , Yoshiaki Moro , Hirokazu Sampei
IPC分类号： G01R31/02 , B05D5/12 , B32B15/04 , G01R31/26 , H05K1/09
CPC分类号： B81C1/00674 , B81B3/0005 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81C1/0096 , G01R1/06761 , G01R3/00 , H01H1/0036 , H01H2001/0052 , Y10T428/12493
摘要： Provided is a method for producing a contact device, including a step of forming a first conductive film; a step of forming a second conductive film containing a metal or an alloy of the metal on the first conductive film; a step of forming a third conductive film on the second conductive film; and a step of forming a surface layer on the third conductive film, the surface layer containing an oxidative product of the metal in the second conductive film, which metal has been diffused to be precipitated out from the surface of the third conductive film and oxidized.
摘要翻译：提供一种接触装置的制造方法，包括形成第一导电膜的工序; 在第一导电膜上形成含有金属或金属合金的第二导电膜的步骤; 在第二导电膜上形成第三导电膜的步骤; 以及在所述第三导电膜上形成表面层的步骤，所述表面层含有所述金属在所述第二导电膜中的氧化产物，所述金属已被扩散以从所述第三导电膜的表面析出并被氧化。

8. 发明授权

US08952383B2 Test carrier 有权
标题翻译：测试载体
公开(公告)号：US08952383B2
公开(公告)日：2015-02-10
申请号：US13644140
申请日：2012-10-03
申请人： Kiyoto Nakamura , Takashi Fujisaki
发明人： Kiyoto Nakamura , Takashi Fujisaki
IPC分类号： H01L23/58 , G01R1/04
CPC分类号： H01L23/58 , G01R1/0466 , H01L2224/16225
摘要： A test carrier which can suppress the occurrence of contact defects while securing positional precision of the terminals is provided. A test carrier 10 comprises: a base film 40 which has one main surface which has bumps which contact electrodes 91 of the die 90; and a cover film 70 which is laid over the base film 40, the die 90 is held between the base film 40 and the cover film 70, the base film 40 has: a first region 40a which has a first thickness t1; and a second region 40b which has a second thickness t2 which is thinner than the first thickness t1, and the second region 40b faces at least a part of the edge 92 of the die 90.
摘要翻译：提供一种能够在确保端子的位置精度的同时抑制接触缺陷的发生的测试载体。测试载体10包括：基膜40，其具有一个主表面，其具有与模具90的电极91接触的凸块; 以及覆盖在基膜40上的覆盖膜70，模具90保持在基膜40和覆盖膜70之间，基膜40具有：具有第一厚度t1的第一区域40a; 第二区域40b具有比第一厚度t1薄的第二厚度t2，第二区域40b面对模具90的边缘92的至少一部分。

9. 发明授权

US07800386B2 Contact device and method for producing the same 有权
标题翻译：接触装置及其制造方法
公开(公告)号：US07800386B2
公开(公告)日：2010-09-21
申请号：US12174645
申请日：2008-07-17
申请人： Kiyoto Nakamura , Hiroshi Arikawa , Yoshiaki Moro , Hirokazu Sampei
发明人： Kiyoto Nakamura , Hiroshi Arikawa , Yoshiaki Moro , Hirokazu Sampei
IPC分类号： G01R31/02 , G01R31/28
CPC分类号： B81C1/00674 , B81B3/0005 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81C1/0096 , G01R1/06761 , G01R3/00 , H01H1/0036 , H01H2001/0052 , Y10T428/12493
摘要： Provided is a method for producing a contact device, including a step of forming a first conductive film; a step of forming a second conductive film containing a metal or an alloy of the metal on the first conductive film; a step of forming a third conductive film on the second conductive film; and a step of forming a surface layer on the third conductive film, the surface layer containing an oxidative product of the metal in the second conductive film, which metal has been diffused to be precipitated out from the surface of the third conductive film and oxidized.
摘要翻译：提供一种接触装置的制造方法，包括形成第一导电膜的工序; 在第一导电膜上形成含有金属或金属合金的第二导电膜的步骤; 在第二导电膜上形成第三导电膜的步骤; 以及在所述第三导电膜上形成表面层的步骤，所述表面层含有所述金属在所述第二导电膜中的氧化产物，所述金属已被扩散以从所述第三导电膜的表面析出并被氧化。

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