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1. 发明申请

US20100269963A1 COPPER ALLOY MATERIAL EXCELLENT IN STRENGTH, BENDING WORKABILITY AND STRESS RELAXATION RESISTANCE, AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：铜合金材料具有优异的强度，弯曲性和耐应力松弛性及其制造方法
公开(公告)号：US20100269963A1
公开(公告)日：2010-10-28
申请号：US12740979
申请日：2008-10-31
申请人： Kiyoshige Hirose , Kuniteru Mihara , Hiroshi Kaneko , Tatsuhiko Eguchi
发明人： Kiyoshige Hirose , Kuniteru Mihara , Hiroshi Kaneko , Tatsuhiko Eguchi
IPC分类号： C22F1/08 , C22C9/06 , C22C9/02 , C22C9/04
CPC分类号： C22C9/06 , C22F1/08
摘要： A copper alloy material according to the present invention is characterized in that the same comprises: Ni between 2.8 mass % and 5.0 mass %; Si between 0.4 mass % and 1.7 mass %; S of which content is limited to less than 0.005 mass %; and the balance of the copper alloy material is composed of copper and unavoidable impurity, wherein a proof stress is stronger than or equal to 800 MPa, and the same is superior in bending workability and in stress relaxation resistance.
摘要翻译：根据本发明的铜合金材料的特征在于，其包含：2.8质量％至5.0质量％的Ni; Si在0.4质量％至1.7质量％之间; S含量限制在0.005质量％以下; 铜合金材料的平衡由铜和不可避免的杂质构成，其中耐应力为800MPa以上，弯曲加工性和耐应力松弛性优异。

2. 发明授权

US08287669B2 Copper alloy for electric and electronic equipments 有权
标题翻译：铜合金电气电子设备
公开(公告)号：US08287669B2
公开(公告)日：2012-10-16
申请号：US12130203
申请日：2008-05-30
申请人： Hiroshi Kaneko , Tatsuhiko Eguchi , Kuniteru Mihara , Kiyoshige Hirose
发明人： Hiroshi Kaneko , Tatsuhiko Eguchi , Kuniteru Mihara , Kiyoshige Hirose
IPC分类号： C22C9/06 , C22C9/10
CPC分类号： C22C9/06 , C22C9/10 , C22F1/08 , H01R13/03
摘要： A copper alloy for electric and electronic equipments, containing from 0.5 to 4.0 mass % of Ni, from 0.5 to 2.0 mass % of Co, and from 0.3 to 1.5 mass % of Si, with the balance of copper and inevitable impurities, wherein R{200} is 0.3 or more, in which the R{200} is a proportion of a diffraction intensity from a {200} plane of the following diffraction intensities and is represented by R{200}=I{200}/(I{111}+I{200}+I{220}+I{311}), I{111} is a diffraction intensity from a {111} plane, I{200} is a diffraction intensity from a {200} plane, I{220} is a diffraction intensity from a {220} plane, and I{311} is a diffraction intensity from a {311} plane, each at the material surface.
摘要翻译：一种用于电气和电子设备的铜合金，其含有0.5至4.0质量％的Ni，0.5至2.0质量％的Co和0.3至1.5质量％的Si，余量为铜和不可避免的杂质，其中R { 200}为0.3以上，其中R {200}是来自以下衍射强度的{200}面的衍射强度的比例，并且由R {200} = I {200} /（I {111 } {I} {I} {I} {I} {I} {I} {I}} {I} {111}是来自{111}面的衍射强度，I {200}是来自{200}面的衍射强度， 220}是{220}面的衍射强度，I {311}是来自{311}面的衍射强度，各自在材料表面。

3. 发明申请

US20110038753A1 COPPER ALLOY SHEET MATERIAL 审中-公开
标题翻译：铜合金材料
公开(公告)号：US20110038753A1
公开(公告)日：2011-02-17
申请号：US12741309
申请日：2008-11-05
申请人： Hiroshi Kaneko , Kiyoshige Hirose , Kuniteru Mihara , Tatsuhiko Eguchi
发明人： Hiroshi Kaneko , Kiyoshige Hirose , Kuniteru Mihara , Tatsuhiko Eguchi
IPC分类号： C22C9/06
CPC分类号： C22C9/06 , B21B3/00 , B21B2003/005 , C22C9/04 , C22F1/08
摘要： A copper alloy sheet material which has a tensile strength of 730-820 MPa and contains at least nickel (Ni) and silicon (Si), with the remainder being copper (Cu) and inevitable impurities. When the sheet material has a shape capable of 180° tight bending and the width and thickness of this sheet material are expressed by W (unit: mm) and T (unit: mm) respectively, then the product of W and T is 0.16 or less. Preferably, the sheet material is constituted of an alloy containing nickel at 1.8-3.3 mass %, silicon at 0.4 mass %, and chromium (Cr) at 0.01-0.5 mass %, with the remainder being copper and inevitable impurities. The sheet material may further contain one or more of: at least one member selected among tin (Sn), magnesium (Mg), silver (Ag), manganese (Mn), titanium (Ti), iron (Fe), and phosphorus (P) in a total amount of 0.01-1 mass %; zinc (Zn) at 0.01-10 mass %, cobalt (Co) at and 0.01-1.5 mass %.
摘要翻译：一种铜合金板材，其拉伸强度为730-820MPa，至少含有镍（Ni）和硅（Si），其余为铜（Cu）和不可避免的杂质。当片材具有180°紧弯曲的形状，并且该片材的宽度和厚度分别由W（单位：mm）和T（单位：mm）表示时，W和T的乘积为0.16或减。优选地，片材由含有1.8-3.3质量％的镍，0.4质量％的硅和0.01-0.5质量％的铬（Cr）的合金构成，其余为铜和不可避免的杂质。片材还可以包含以下中的一种或多种：选自锡（Sn），镁（Mg），银（Ag），锰（Mn），钛（Ti），铁（Fe）和磷 P），总量为0.01-1质量％; 0.01-10质量％的锌（Zn），钴（Co）为0.01〜1.5质量％。

4. 发明申请

US20100193092A1 COPPER ALLOY FOR ELECTRICAL/ELECTRONIC DEVICE AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：电气/电子设备用铜合金及其制造方法
公开(公告)号：US20100193092A1
公开(公告)日：2010-08-05
申请号：US12593024
申请日：2008-03-26
申请人： Ryosuke Matsuo , Tatsuhiko Eguchi , Kuniteru Mihara , Hiroshi Kaneko , Kiyoshige Hirose
发明人： Ryosuke Matsuo , Tatsuhiko Eguchi , Kuniteru Mihara , Hiroshi Kaneko , Kiyoshige Hirose
IPC分类号： C22F1/08 , C22C9/06
CPC分类号： C22C9/06 , B03C5/005 , B03C5/022 , C22C9/00 , C22F1/00 , C22F1/08 , H01R13/03
摘要： A copper alloy for an electrical and electronic device in accordance with the present invention is characterized in that the copper alloy for an electrical and electronic device includes: nickel (Ni) between 1.5 mass % and 5.0 mass %; silicon (Si) between 0.4 mass % and 1.5 mass %; and a remaining portion formed of Cu and an unavoidable impurity, wherein a mass ratio between Nickel (Ni) and Silicon (Si) as Ni/Si is not smaller than two and not larger than seven, an average crystalline grain diameter is not smaller than 2 μm and not larger than 20 μm, and a standard deviation of the crystalline grain diameter is not larger than 10 μm.
摘要翻译：根据本发明的用于电气和电子设备的铜合金的特征在于，用于电气和电子设备的铜合金包括：1.5质量％至5.0质量％的镍（Ni）; 硅（Si）在0.4质量％至1.5质量％之间; 和由Cu形成的剩余部分和不可避免的杂质，Ni / Si之间的镍（Ni）和硅（Si）的质量比不小于2并且不大于7，平均晶粒直径不小于 2μm且不大于20μm，晶粒直径的标准偏差不大于10μm。

5. 发明申请

US20050236074A1 Copper alloy 审中-公开
标题翻译：铜合金
公开(公告)号：US20050236074A1
公开(公告)日：2005-10-27
申请号：US11066323
申请日：2005-02-25
申请人： Kuniteru Mihara , Tatsuhiko Eguchi , Nobuyuki Tanaka , Kiyoshige Hirose
发明人： Kuniteru Mihara , Tatsuhiko Eguchi , Nobuyuki Tanaka , Kiyoshige Hirose
IPC分类号： C22C9/06
CPC分类号： C22C9/06
摘要： A copper alloy, which contains: a precipitate X composed of Ni and Si; and a precipitate Y that comprises Ni or Si or neither Ni nor Si, wherein the precipitate X has a grain size of 0.001 to 0.1 μm, and the precipitate Y has a grain size of 0.01 to 1 μm.
摘要翻译：一种铜合金，其包含：由Ni和Si构成的沉淀物X; 以及包含Ni或Si或既不含Ni，也不含Si的析出物Y，其中，析出物X的粒径为0.001〜0.1μm，析出物Y的粒径为0.01〜1μm。

6. 发明授权

US08951371B2 Copper alloy 有权
标题翻译：铜合金
公开(公告)号：US08951371B2
公开(公告)日：2015-02-10
申请号：US12976409
申请日：2010-12-22
申请人： Kuniteru Mihara , Tatsuhiko Eguchi , Nobuyuki Tanaka , Kiyoshige Hirose
发明人： Kuniteru Mihara , Tatsuhiko Eguchi , Nobuyuki Tanaka , Kiyoshige Hirose
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： C22C9/06
摘要： A method of producing a copper alloy containing a precipitate X composed of Ni and Si and a precipitate Y that includes (a) Ni and 0% Si, (b) Si and 0% Ni, or (c) neither Ni nor Si, wherein the precipitate X has a grain size of 0.001 to 0.1 μm, and the precipitate Y has a grain size of 0.01 to 1 μm.
摘要翻译：含有由Ni和Si构成的析出物X的铜合金和包含（a）Ni和0％Si，（b）Si和0％Ni，或（c）既不是Ni也不是Si的析出物Y的铜合金的制造方法，其中析出物X的粒径为0.001〜0.1μm，析出物Y的粒径为0.01〜1μm。

7. 发明申请

US20110094635A1 COPPER ALLOY 审中-公开
标题翻译：铜合金
公开(公告)号：US20110094635A1
公开(公告)日：2011-04-28
申请号：US12976409
申请日：2010-12-22
申请人： Kuniteru Mihara , Tatsuhiko Eguchi , Nobuyuki Tanaka , Kiyoshige Hirose
发明人： Kuniteru Mihara , Tatsuhiko Eguchi , Nobuyuki Tanaka , Kiyoshige Hirose
IPC分类号： C22F1/08
CPC分类号： C22C9/06
摘要： A method of producing a copper alloy containing a precipitate X composed of Ni and Si and a precipitate Y that comprises (a) Ni and 0% Si, (b) Si and 0% Ni, or (c) neither Ni nor Si, wherein the precipitate X has a grain size of 0.001 to 0.1 μm, and the precipitate Y has a grain size of 0.01 to 1 μm.
摘要翻译：含有由Ni和Si构成的析出物X的铜合金的制造方法以及包含（a）Ni和0％Si，（b）Si和0％Ni的析出物Y，或者（c）既不是Ni也不是Si，析出物X的粒径为0.001〜0.1μm，析出物Y的粒径为0.01〜1μm。

8. 发明申请

US20100316879A1 COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC COMPONENTS 审中-公开
标题翻译：电子/电子元件铜合金材料
公开(公告)号：US20100316879A1
公开(公告)日：2010-12-16
申请号：US12866650
申请日：2009-02-06
申请人： Kuniteru Mihara , Hiroshi Kaneko , Kiyoshige Hirose
发明人： Kuniteru Mihara , Hiroshi Kaneko , Kiyoshige Hirose
IPC分类号： H01B1/02
CPC分类号： C22C9/06 , C22C9/10 , C22F1/08 , H01B1/026 , H01L23/49579 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： A copper alloy material for electric/electronic components according to the present invention is characterized in that a average grain size of 1 to 50 μm that is designated by ((a+b)/2) in which a thickness of a grain is defined to be (a) and a width thereof is defined to be (b) which is on a cross section that is vertical to a rolling direction, an aspect ratio (a/b) thereof is between 0.5 and 1.0, an aspect ratio (a/b) of a grain before performing a bend working and an aspect ratio (a′/b′) of which a grain is effected by a tensile stress after performing a bend working of 90 degrees satisfy the following (Formula 1) of: 2≦(a+b)/(a′/b′)≦15 (Formula 1), and the copper alloy material has a bending workability to be excellent.
摘要翻译：本发明的电气电子部件用铜合金材料的特征在于，将（（a + b）/ 2）表示的粒径为1μm〜50μm的平均粒径定义为（a），其宽度被定义为在垂直于轧制方向的横截面上的（b），其纵横比（a / b）在0.5和1.0之间，纵横比（a / b）在执行弯曲加工之前的颗粒和在进行90度的弯曲加工之后通过拉伸应力进行颗粒的纵横比（a'/ b'）满足以下（式1）：2＆nlE; （a + b）/（a'/ b'）＆nlE; 15（式1），铜合金材料的弯曲加工性优异。

9. 发明授权

US08795446B2 Copper alloy material, electrical or electronic parts, and method of producing a copper alloy material 有权
标题翻译：铜合金材料，电气或电子部件以及铜合金材料的制造方法
公开(公告)号：US08795446B2
公开(公告)日：2014-08-05
申请号：US13091688
申请日：2011-04-21
申请人： Hiroshi Kaneko , Kiyoshige Hirose , Tatsuhiko Eguchi
发明人： Hiroshi Kaneko , Kiyoshige Hirose , Tatsuhiko Eguchi
IPC分类号： C22C9/02 , C22F1/08
CPC分类号： H01B1/026 , C22C9/06 , C22C9/10 , C22F1/00 , C22F1/08 , H01B13/0016
摘要： A copper alloy material, having an alloy composition containing any one or both of Ni and Co in an amount of 0.4 to 5.0 mass % in total, and Si in an amount of 0.1 to 1.5 mass %, with the balance being copper and unavoidable impurities, wherein a ratio of an area of grains in which an angle of orientation deviated from S-orientation {2 3 1} is within 30° is 60 % or more, according to a crystal orientation analysis in EBSD measurement; an electrical or electronic part formed by working the copper alloy material; and a method of producing the copper alloy material.
摘要翻译：一种铜合金材料，其合金组成含有总量为0.4〜5.0质量％的Ni和Co中的任一种或两者，Si为0.1〜1.5质量％，余量为铜和不可避免的杂质其中，根据EBSD测定中的晶体取向分析，其中取向于S取向{2 3 1} <3 4 6>的取向角在30°以内的晶粒面积的比率为60％以上。通过加工铜合金材料形成的电气或电子部件; 以及铜合金材料的制造方法。

10. 发明申请

US20110259480A1 COPPER ALLOY MATERIAL 审中-公开
标题翻译：铜合金材料
公开(公告)号：US20110259480A1
公开(公告)日：2011-10-27
申请号：US13175068
申请日：2011-07-01
申请人： Kiyoshige Hirose , Tatsuhiko Eguchi
发明人： Kiyoshige Hirose , Tatsuhiko Eguchi
IPC分类号： C22F1/08 , C21D11/00
CPC分类号： C22C9/06 , C22F1/08 , H01B1/026
摘要： A copper alloy material, containing Ni 1.8 to 5.0 mass % and Si 0.3 to 1.7 mass %, at a ratio of contents of Ni and Si, Ni/Si, of 3.0 to 6.0, and having a content of S of less than 0.005 mass %, with the balance of being Cu and inevitable impurities, wherein the copper alloy material satisfies formulae (1) to (4): 130×C+300≦TS≦130×C+650 (1) 0.001≦d≦0.020 (2) W≦150 (3) 10≦L≦800 (4) wherein TS represents a tensile strength (MPa) of the copper alloy material in a direction parallel to rolling; C represents the content (mass %) of Ni in the copper alloy material; d represents an average grain diameter (mm) of the copper alloy material; W represents a width (nm) of a precipitate free zone; and L represents a particle diameter (nm) of a compound on a grain boundary.
摘要翻译：以Ni和Si的含量比，Ni / Si为3.0〜6.0，含量为小于0.005质量％的含有1.8〜5.0质量％的Ni，Si为0.3〜1.7质量％的铜合金材料％，余量为Cu和不可避免的杂质，其中铜合金材料满足公式（1）至（4）：130×C + 300＆nlE; TS＆nlE; 130×C + 650（1）0.001＆nlE; d＆nlE; 0.020 2）W＆nlE; 150（3）10＆nlE; L＆nlE; 800（4）其中TS表示铜合金材料在平行于轧制方向上的拉伸强度（MPa） C表示铜合金材料中的Ni的含量（质量％）; d表示铜合金材料的平均粒径（mm）; W表示无沉淀区的宽度（nm）; L表示化合物在晶界上的粒径（nm）。

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