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    • 1. 发明授权
    • Magnetic multilayered film, magnetoresistance effect element and
magnetoresistance device
    • 磁性多层膜,磁阻效应元件和磁阻器件
    • US5958611A
    • 1999-09-28
    • US873739
    • 1997-06-12
    • Manabu OhtaKiyoshi NoguchiMasashi SanoSatoru ArakiTaro Oike
    • Manabu OhtaKiyoshi NoguchiMasashi SanoSatoru ArakiTaro Oike
    • G11B5/31G11B5/39H01F10/08H01F10/32H01L43/08H01L43/10G11B5/66
    • B82Y25/00B82Y10/00G11B5/3903H01F10/3268H01L43/10G11B2005/3996G11B5/3163Y10S428/90Y10T428/1107Y10T428/1121Y10T428/24355
    • According to the present invention, a magnetic multilayered film includes an oxide antiferromagnetic layer, a pinned ferromagnetic layer which is pinned by the oxide antiferromagnetic layer, a non-magnetic metal layer and a free ferromagnetic layer which are stacked on a substrate in order. A surface roughness Ra of the oxide antiferromagnetic layer at the side of the pinned ferromagnetic layer is set to no greater than 0.6 nm, and a crystal grain size D of the oxide antiferromagnetic layer is set to a value in the range of 10 to 40 nm. Thus, the magnetic multilayered film has the large exchange-coupling magnetic field and MR ratio and MR sensitivity. The magnetic multilayered film may be applied to a magnetoresistance effect element which may also applied to a magnetoresistance device, such as, a magnetoresistance effect type head. The magnetoresistance effect element having such a magnetic multilayered film is capable of obtaining high outputs. The magnetoresistance effect type head having such a magnetoresistance effect element which is excellent in current efficiency and capable of detecting signals magnetically recorded in high density, particularly in ultrahigh density exceeding 3 Gbit/inch.sup.2 and further obtaining large outputs.
    • 根据本发明,磁性多层膜包括氧化物反铁磁性层,由氧化物反铁磁层固定的钉扎铁磁性层,依次层叠在基板上的非磁性金属层和自由铁磁性层。 在被钉扎的铁磁层一侧的氧化物反铁磁性层的表面粗糙度Ra被设定为不大于0.6nm,并且氧化物反铁磁性层的晶粒尺寸D设定在10至40nm的范围内的值 。 因此,磁性多层膜具有大的交换耦合磁场和MR比和MR灵敏度。 可以将磁性多层膜施加到也可以施加到诸如磁阻效应型头的磁阻器件的磁阻效应元件。 具有这种磁性多层膜的磁阻效应元件能够获得高输出。 具有这样的磁阻效应元件的磁电阻效应型头具有优异的电流效率,能够检测高密度地磁记录的信号,特别是超过3Gbit / inch2的超高密度,并进一步获得大的输出。
    • 5. 发明申请
    • Thin film magnetic head
    • 薄膜磁头
    • US20050195526A1
    • 2005-09-08
    • US11068967
    • 2005-03-02
    • Hiraku HirabayashiKiyoshi NoguchiTaro OikeShin NarushimaTakamitsu Sakamoto
    • Hiraku HirabayashiKiyoshi NoguchiTaro OikeShin NarushimaTakamitsu Sakamoto
    • G11B5/31G11B5/147
    • G11B5/3116G11B5/1278
    • The present invention is intended for a thin film magnetic head which can provide reduction in the excess magnetostatic leakage field even if the flare point is set near to the ABS in order to generate a sufficient recording magnetic field and which can assure stable overwrite characteristics even if there are variations in upper pole portion patterns. The pole end portion 223 has a width W11 to define a recording track width. The pole rear portion 222 has one end which is magnetically connected with the pole end portion 223 at or in the vicinity of an edge portion of an insulating film 273 and defines a first flare point FP1, the other end which is connected with the upper yoke portion 221 and defines a second flare point FP2, and both side edges in the track width direction which are inclined so that the width in the track width direction gradually increases from the second flare point FP2 toward the first flare point FP1. The width W11 of the pole end portion 223 at the first flare point FP1 is smaller than the maximum width W21 of the pole rear portion 222.
    • 本发明的目的在于一种薄膜磁头,即使将扩张点设置在靠近ABS的情况下也能够提供过剩的静磁泄漏场,以产生足够的记录磁场,即使在 上极部分图形有变化。 极端部223具有宽度W 11,以限定记录轨道宽度。 极后部222的一端在绝缘膜273的边缘部分处或附近与极端部223磁性连接,并且限定第一扩口点FP1,另一端与上端 轭部221,并且限定第二扩张点FP 2,以及轨道宽度方向上的两个侧边缘,其倾斜,使得轨道宽度方向上的宽度从第二扩张点FP 2朝向第一扩张点FP 1逐渐增加。 第一点火点FP 1的极端部223的宽度W 11比极后部222的最大宽度W 21小。
    • 10. 发明授权
    • Magnetoresistance effect film and magnetoresistance effect type head
    • 磁阻效应膜和磁阻效应型头
    • US5968676A
    • 1999-10-19
    • US993019
    • 1997-12-18
    • Satoru ArakiKiyoshi Noguchi
    • Satoru ArakiKiyoshi Noguchi
    • G11B5/31G11B5/39H01F10/08H01F10/30H01F10/32H01L43/08H01L43/10G11B5/66
    • B82Y25/00B82Y10/00G11B5/3903H01F10/3268H01L43/10B41J2002/041G11B2005/3996G11B5/3163Y10S428/90Y10T428/1107
    • A spin valve type magnetoresistance effect film comprises a magnetic multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from a surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer. The antiferromagnetic layer contains oxygen as impurities and a concentration of oxygen contained in the antiferromagnetic layer is set to 1 to 2,000 atomic ppm. With this arrangement, there can be provided a magnetoresistance effect film having a high-quality antiferromagnetic layer which is excellent in thermal stability, sufficiently high in blocking temperature and highly excellent in pinning effect. Further, there can be provided a magnetoresistance effect type head which is excellent in thermal stability, high in magnetic field sensitivity and large in MR change ratio.
    • 自旋阀型磁阻效应膜包括:包含非磁性金属层的磁性多层膜,形成在非磁性金属层的一个表面上的铁磁层,形成在非磁性金属的另一个表面上的软磁性层 层和反铁磁层,其形成在铁磁层的远离其与非磁性金属层相邻的表面的表面上,以便引导铁磁层的磁化方向。 反铁磁性层含有氧作为杂质,反铁磁性层中所含的氧浓度为1〜2000原子ppm。 通过这种布置,可以提供具有优异的热稳定性,阻断温度足够高,钉扎效果优异的高品质反铁磁层的磁阻效应膜。 此外,可以提供热稳定性优异,磁场灵敏度高,MR变化率大的磁阻效应型头。