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    • 4. 发明申请
    • PHOTOELECTRIC DEVICE
    • 光电器件
    • US20090107539A1
    • 2009-04-30
    • US11997836
    • 2006-08-02
    • Kiyoshi MushaTamotsu Takahashi
    • Kiyoshi MushaTamotsu Takahashi
    • H01L31/042H01L31/00
    • H01L51/441B82Y10/00H01L51/0037H01L51/0044H01L51/0047H01L51/0053H01L51/0078H01L51/0094H01L51/4226H01L51/424H01L51/4253Y02E10/549
    • A photoelectric conversion element having a photoelectric conversion layer between opposing anode electrode and cathode electrode, the photoelectric conversion layer having a structure in which (1) a p-type semiconductor layer and (2) a layer mixing a p-type semiconductor with an n-type semiconductor, and, as required, (3) an n-type semiconductor layer or a metal oxide layer are sequentially layered, characterized in that at least one photoelectric conversion efficiency improving means out of the following (a)-(c) is used. (a) An organic semiconductor thin film with a charge mobility of at least 0.005 cm2/V·sec being used as at least one semiconductor layer in (1)-(3). (b) The energy gap between the work function of the anode electrode and the HOMO (highest occupied molecular orbit) of the p-type semiconductor layer in (1) and/or the energy gap between the work function of the cathode electrode and the LUMO (lowest unoccupied molecular orbit) of the n-type semiconductor layer in (3) being up to 0.5 eV. (c) A buffer layer formed of an organic compound being provided between the anode electrode and/or the cathode electrode and the photoelectric conversion layer to chemically bond the organic compound of the buffer layer with the anode electrode and/or the cathode electrode.
    • 一种光电转换元件,其具有在相对的阳极电极和阴极之间的光电转换层,所述光电转换层具有以下结构:(1)p型半导体层和(2)将p型半导体与n 型半导体,根据需要,(3)依次层叠n型半导体层或金属氧化物层,其特征在于,以下(a) - (c)中的至少一个光电转换效率改善装置为 用过的。 (a)在(1) - (3)中,作为至少一个半导体层使用电荷迁移率为0.005cm 2 / V以上的有机半导体薄膜。 (b)阳极电极的功函数与(1)中p型半导体层的HOMO(最高占有分子轨道)之间的能隙和/或阴极电极的功函数与 (3)中n型半导体层的LUMO(最低未占分子轨道)高达0.5eV。 (c)在阳极和/或阴极和光电转换层之间设置由有机化合物形成的缓冲层,以将缓冲层的有机化合物与阳极电极和/或阴极电化学键合。