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1. 发明申请

US20090206345A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090206345A1
公开(公告)日：2009-08-20
申请号：US12429200
申请日：2009-04-24
申请人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
发明人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
IPC分类号： H01L33/00
CPC分类号： H01L29/78621 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A semiconductor device having a display unit, which is small in size, suppresses the defect caused by the mounting of IC chips and the like on the substrate, and operates at a high speed. A semiconductor display unit and other circuit blocks are integrally formed on the substrate having an insulating surface by using a process for fabricating TFTs that realize a high degree of mobility. Concretely, there is employed a process for crystallizing a semiconductor active layer by using a continuously oscillating laser. Further, the process for crystallization relying upon the continuously oscillating laser is selectively effected for only those circuit blocks that must be operated at high speeds, thereby to realize a high production efficiency.
摘要翻译：具有尺寸小的显示单元的半导体器件抑制由于将IC芯片等安装在基板上而引起的缺陷，并且高速运转。通过使用实现高移动性的TFT的制造工艺，半导体显示单元和其它电路块一体地形成在具有绝缘表面的基板上。具体地，采用使用连续振荡激光使半导体活性层结晶的工艺。此外，仅依赖于必须以高速运转的电路块选择性地实现依赖于连续振荡激光的结晶工艺，从而实现高生产效率。

2. 发明授权

US07935968B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07935968B2
公开(公告)日：2011-05-03
申请号：US12429200
申请日：2009-04-24
申请人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
发明人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
IPC分类号： H01L29/10
CPC分类号： H01L29/78621 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A semiconductor device having a display unit, which is small in size, suppresses the defect caused by the mounting of IC chips and the like on the substrate, and operates at a high speed. A semiconductor display unit and other circuit blocks are integrally formed on the substrate having an insulating surface by using a process for fabricating TFTs that realize a high degree of mobility. Concretely, there is employed a process for crystallizing a semiconductor active layer by using a continuously oscillating laser. Further, the process for crystallization relying upon the continuously oscillating laser is selectively effected for only those circuit blocks that must be operated at high speeds, thereby to realize a high production efficiency.
摘要翻译：具有尺寸小的显示单元的半导体器件抑制由于将IC芯片等安装在基板上而引起的缺陷，并且高速运转。通过使用实现高移动性的TFT的制造工艺，半导体显示单元和其它电路块一体地形成在具有绝缘表面的基板上。具体地，采用使用连续振荡激光使半导体活性层结晶的工艺。此外，仅依赖于必须以高速运转的电路块选择性地实现依赖于连续振荡激光的结晶工艺，从而实现高生产效率。

3. 发明申请

US20070040176A1 Semiconductor device 有权
公开(公告)号：US20070040176A1
公开(公告)日：2007-02-22
申请号：US11585887
申请日：2006-10-25
申请人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
发明人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
IPC分类号： H01L29/76 , H01L29/04
CPC分类号： H01L29/78621 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A semiconductor device having a display unit, which is small in size, suppresses the defect caused by the mounting of IC chips and the like on the substrate, and operates at a high speed. A semiconductor display unit and other circuit blocks are integrally formed on the substrate having an insulating surface by using a process for fabricating TFTs that realize a high degree of mobility. Concretely, there is employed a process for crystallizing a semiconductor active layer by using a continuously oscillating laser. Further, the process for crystallization relying upon the continuously oscillating laser is selectively effected for only those circuit blocks that must be operated at high speeds, thereby to realize a high production efficiency.

4. 发明申请

US20050227397A1 Active matrix display device and manufacturing method thereof 有权
公开(公告)号：US20050227397A1
公开(公告)日：2005-10-13
申请号：US11150286
申请日：2005-06-13
申请人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
发明人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
IPC分类号： G02F1/1333 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/06 , H01L27/12
CPC分类号： H01L27/1214 , G02F1/13454 , G02F2001/133368 , H01L27/0688
摘要： A semiconductor device reduced in size is provided in which the surface area outside of a display portion required for IC chips to mounted is reduced in a semiconductor device having an active matrix display portion. Further, signal wiring connection defects that accompany IC chip mounting are reduced. By manufacturing TFTs on an opposing substrate in a reflecting active matrix semiconductor device, thus manufacturing a desired logic circuit, the logic circuit, conventionally mounted externally, is formed on the opposing substrate. Further, the semiconductor device is made high speed and high performance by using suitable TFT structures and electric power source voltages for pixels and driver circuits on a pixel substrate and for the logic circuit on the opposing substrate.

5. 发明授权

US07524689B2 Active matrix display device and manufacturing method thereof 有权
标题翻译：有源矩阵显示装置及其制造方法
公开(公告)号：US07524689B2
公开(公告)日：2009-04-28
申请号：US11150286
申请日：2005-06-13
申请人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
发明人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
IPC分类号： H01L21/00 , G02F1/136
CPC分类号： H01L27/1214 , G02F1/13454 , G02F2001/133368 , H01L27/0688
摘要： A semiconductor device reduced in size is provided in which the surface area outside of a display portion required for IC chips to mounted is reduced in a semiconductor device having an active matrix display portion. Further, signal wiring connection defects that accompany IC chip mounting are reduced. By manufacturing TFTs on an opposing substrate in a reflecting active matrix semiconductor device, thus manufacturing a desired logic circuit, the logic circuit, conventionally mounted externally, is formed on the opposing substrate. Further, the semiconductor device is made high speed and high performance by using suitable TFT structures and electric power source voltages for pixels and driver circuits on a pixel substrate and for the logic circuit on the opposing substrate.
摘要翻译：提供了尺寸减小的半导体器件，其中在具有有源矩阵显示部分的半导体器件中，减少了用于安装IC芯片所需的显示部分外部的表面积。此外，减少了伴随IC芯片安装的信号布线连接缺陷。通过在反射有源矩阵半导体器件中的相对基板上制造TFT，由此制造期望的逻辑电路，常规地安装在外部的逻辑电路形成在相对的基板上。此外，通过对像素基板上的像素和驱动电路使用合适的TFT结构和电源电压以及相对基板上的逻辑电路，半导体器件被制成高速和高性能。

6. 发明申请

US20060049405A1 Passive matrix display device 有权
公开(公告)号：US20060049405A1
公开(公告)日：2006-03-09
申请号：US11249436
申请日：2005-10-14
申请人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
发明人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
IPC分类号： H01L29/04
CPC分类号： G02F1/1345 , G02F1/13454
摘要： In a semiconductor device with a reflective passive matrix liquid crystal display mounted thereto, the area for mounting a logic circuit is reduced, the product is reduced in size, and further the reliability is improved. A semiconductor device with a reflective passive matrix liquid crystal display mounted thereto is reduced in size by forming all or some of externally-mounted logic circuits in a region overlapping a pixel region on a substrate where a reflective electrode is formed. The present invention can also reduce the number of IC chips and the like mounted to a substrate greatly and the reliability in mounting IC chips and the like to a substrate can be improved.

7. 发明授权

US07538348B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07538348B2
公开(公告)日：2009-05-26
申请号：US11585887
申请日：2006-10-25
申请人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
发明人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
IPC分类号： H01L29/10
CPC分类号： H01L29/78621 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A semiconductor device having a display unit, which is small in size, suppresses the defect caused by the mounting of IC chips and the like on the substrate, and operates at a high speed. A semiconductor display unit and other circuit blocks are integrally formed on the substrate having an insulating surface by using a process for fabricating TFTs that realize a high degree of mobility. Concretely, there is employed a process for crystallizing a semiconductor active layer by using a continuously oscillating laser. Further, the process for crystallization relying upon the continuously oscillating laser is selectively effected for only those circuit blocks that must be operated at high speeds, thereby to realize a high production efficiency.
摘要翻译：具有尺寸小的显示单元的半导体器件抑制由于将IC芯片等安装在基板上而引起的缺陷，并且高速运转。通过使用实现高移动性的TFT的制造工艺，半导体显示单元和其它电路块一体地形成在具有绝缘表面的基板上。具体地，采用使用连续振荡激光使半导体活性层结晶的工艺。此外，仅依赖于必须以高速运转的电路块选择性地实现依赖于连续振荡激光的结晶工艺，从而实现高生产效率。

8. 发明授权

US07323714B2 Passive matrix display device 有权
标题翻译：被动矩阵显示装置
公开(公告)号：US07323714B2
公开(公告)日：2008-01-29
申请号：US11249436
申请日：2005-10-14
申请人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
发明人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
IPC分类号： H01L29/04
CPC分类号： G02F1/1345 , G02F1/13454
摘要： In a semiconductor device with a reflective passive matrix liquid crystal display mounted thereto, the area for mounting a logic circuit is reduced, the product is reduced in size, and further the reliability is improved. A semiconductor device with a reflective passive matrix liquid crystal display mounted thereto is reduced in size by forming all or some of externally-mounted logic circuits in a region overlapping a pixel region on a substrate where a reflective electrode is formed. The present invention can also reduce the number of IC chips and the like mounted to a substrate greatly and the reliability in mounting IC chips and the like to a substrate can be improved.
摘要翻译：在安装有反射型无源矩阵液晶显示器的半导体器件中，用于安装逻辑电路的区域减小，产品尺寸减小，并且进一步提高了可靠性。通过在与形成反射电极的基板上的像素区域重叠的区域中形成全部或一些外部安装的逻辑电路，安装有反射无源矩阵液晶显示器的半导体器件的尺寸减小。本发明还可以大大减少安装在基板上的IC芯片等的数量，并且可以提高将IC芯片等安装到基板上的可靠性。

9. 发明授权

US07232714B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07232714B2
公开(公告)日：2007-06-19
申请号：US10304967
申请日：2002-11-27
申请人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
发明人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
IPC分类号： H01L21/00
CPC分类号： H01L29/78621 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A semiconductor device having a display unit, which is small in size, suppresses the defect caused by the mounting of IC chips and the like on the substrate, and operates at a high speed. A semiconductor display unit and other circuit blocks are integrally formed on the substrate having an insulating surface by using a process for fabricating TFTs that realize a high degree of mobility. Concretely, there is employed a process for crystallizing a semiconductor active layer by using a continuously oscillating laser. Further, the process for crystallization relying upon the continuously oscillating laser is selectively effected for only those circuit blocks that must be operated at high speeds, thereby to realize a high production efficiency.
摘要翻译：具有尺寸小的显示单元的半导体器件抑制由于将IC芯片等安装在基板上而引起的缺陷，并且高速运转。通过使用实现高移动性的TFT的制造工艺，半导体显示单元和其它电路块一体地形成在具有绝缘表面的基板上。具体地，采用使用连续振荡激光使半导体活性层结晶的工艺。此外，仅依赖于必须以高速运转的电路块选择性地实现依赖于连续振荡激光的结晶工艺，从而实现高生产效率。

10. 发明授权

US06956234B2 Passive matrix display device 有权
标题翻译：被动矩阵显示装置
公开(公告)号：US06956234B2
公开(公告)日：2005-10-18
申请号：US10305277
申请日：2002-11-27
申请人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
发明人： Kiyoshi Kato , Tadafumi Ozaki , Kohei Mutaguchi
IPC分类号： G02F1/1345 , G02F1/1362 , H01L29/04
CPC分类号： G02F1/1345 , G02F1/13454
摘要： In a semiconductor device with a reflective passive matrix liquid crystal display mounted thereto, the area for mounting a logic circuit is reduced, the product is reduced in size, and further the reliability is improved. A semiconductor device with a reflective passive matrix liquid crystal display mounted thereto is reduced in size by forming all or some of externally-mounted logic circuits in a region overlapping a pixel region on a substrate where a reflective electrode is formed. The present invention can also reduce the number of IC chips and the like mounted to a substrate greatly and the reliability in mounting IC chips and the like to a substrate can be improved.
摘要翻译：在安装有反射型无源矩阵液晶显示器的半导体器件中，用于安装逻辑电路的区域减小，产品尺寸减小，并且进一步提高了可靠性。通过在与形成反射电极的基板上的像素区域重叠的区域中形成全部或一些外部安装的逻辑电路，安装有反射无源矩阵液晶显示器的半导体器件的尺寸减小。本发明还可以大大减少安装在基板上的IC芯片等的数量，并且可以提高将IC芯片等安装到基板上的可靠性。

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