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1. 发明授权

US4448754A Monolithic catalyst catalytic converter with catalyst holding expansible retainer ring 失效
标题翻译：具有催化剂保持可膨胀保持环的单片催化剂催化转化器
公开(公告)号：US4448754A
公开(公告)日：1984-05-15
申请号：US428663
申请日：1982-09-30
申请人： Kiyoshi Isogai , Nobuo Tobi , Itsuo Koga , Masahiko Takeuchi , Makoto Okamoto , Nobuo Ohmori , Naka Takita
发明人： Kiyoshi Isogai , Nobuo Tobi , Itsuo Koga , Masahiko Takeuchi , Makoto Okamoto , Nobuo Ohmori , Naka Takita
IPC分类号： F01N3/28 , F01N3/10
CPC分类号： F01N3/2853 , F01N3/2867 , Y10S55/30
摘要： A catalytic converter includes a tubular casing within which is held a monolithic catalyst body which is generally of a columnar shape. The ends of the monolithic catalyst body are each engaged with a cushion ring, and each cushion ring is engaged with a retainer ring therefor, which is substantially axially fixed within the casing near to an end thereof. The monolithic catalyst body is supported within the casing by axial compressive force present between the retainer rings on the outside, the cushion rings between the retainer rings, and the monolithic catalyst body between the cushion rings. At least one of the retainer rings is formed with a break in a part of its circumference, the two free ends of the retainer ring on the two sides of the break being movable with distortion of the retainer ring through a certain distance, according to changes of temperature of the retainer ring, with respect to one another in the mutual relative direction which causes the overall circumference of the retainer ring to be diminished, so that expansion of the retainer ring when it heats up is absorbed, and the retainer ring is not subject to kinking or folding when the catalytic converter operates in the hot condition.
摘要翻译：催化转化器包括一个管状外壳，在该壳体中保持一般为柱状的整体式催化剂体。整体式催化剂体的端部均与缓冲环接合，并且每个缓冲环与其保持环接合，该保持环基本上轴向固定在壳体内靠近其端部。单体催化剂体通过存在于外部的保持环之间的轴向压力，保持环之间的缓冲环和缓冲环之间的整体式催化剂体而被支撑在壳体内。至少一个保持环在其圆周的一部分中形成有断裂，断裂两侧的保持环的两个自由端可随着保持环的变形而移动一定距离，根据变化保持环的温度相对于彼此相对的方向，导致保持环的整个周长减小，从而吸收保持环的膨胀，并且保持环不是当催化转化器在热的条件下工作时，会发生扭结或折叠。

2. 发明授权

US08551908B2 Exhaust gas purification catalyst 有权
标题翻译：废气净化催化剂
公开(公告)号：US08551908B2
公开(公告)日：2013-10-08
申请号：US13001683
申请日：2009-06-26
申请人： Akemi Satou , Masahiko Takeuchi , Keizo Hiraku , Yusuke Kawamura , Takahiro Fujiwara , Tadashi Suzuki , Naoki Takahashi
发明人： Akemi Satou , Masahiko Takeuchi , Keizo Hiraku , Yusuke Kawamura , Takahiro Fujiwara , Tadashi Suzuki , Naoki Takahashi
IPC分类号： B01J23/00 , B01J21/00
CPC分类号： B01J23/002 , B01D53/945 , B01D2255/1021 , B01D2255/1023 , B01D2255/1025 , B01D2255/206 , B01D2255/20715 , B01D2255/9022 , B01D2255/908 , B01D2257/304 , B01J23/63 , B01J23/83 , B01J23/894 , B01J35/04 , B01J37/0244 , B01J2523/00 , Y02T10/22 , B01J2523/3712 , B01J2523/3718 , B01J2523/48 , B01J2523/828 , B01J2523/824 , B01J2523/822
摘要： An exhaust gas purification catalyst includes: a lower catalyst layer that contains a ceria-zirconia mixed oxide having 50 to 70 mass % of CeO2 and 5 mass % or more of Pr2O3 and carries at least one of Pt and Pd; and an upper catalyst layer that contains at least zirconia and carries at least Rh, wherein the total amount of CeO2 per liter of the carrier base is 15 to 30 g. Because the amount of CeO2 is small, formation of H2S is suppressed and a high capability of adsorbing and releasing oxygen is brought out in spite of the small amount of CeO2.
摘要翻译：废气净化催化剂包括：含有氧化铈 - 氧化锆混合氧化物的下部催化剂层，其具有50〜70质量％的CeO 2和5质量％以上的Pr 2 O 3，并携带Pt和Pd中的至少一种; 和至少含有氧化锆并至少含有Rh的上部催化剂层，其中每升载体碱的CeO 2的总量为15〜30g。由于CeO 2的量少，因此抑制了H 2 S的形成，并且尽管CeO 2的量少，但是吸附和释放氧的能力也很高。

3. 发明授权

US06849957B2 Photomask including auxiliary mark area, semiconductor device and manufacturing method thereof 有权
标题翻译：包括辅助标记区域的光掩模，半导体器件及其制造方法
公开(公告)号：US06849957B2
公开(公告)日：2005-02-01
申请号：US09725853
申请日：2000-11-30
申请人： Masahiko Takeuchi , Koichiro Narimatsu , Atsushi Ueno
发明人： Masahiko Takeuchi , Koichiro Narimatsu , Atsushi Ueno
IPC分类号： H01L21/66 , G03F9/00 , H01L21/027 , H01L21/822 , H01L23/544 , H01L27/04
CPC分类号： G03F9/7084 , G03F1/42 , G03F9/7076 , H01L23/544 , H01L2223/54406 , H01L2223/5442 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device enabling precise and accurate measurement of an inspection mark in a simple manner is obtained. The semiconductor device includes a device forming area and a dicing line area arranged to surround the device forming area on a semiconductor substrate. In the dicing line area, first and second registration marks formed in different shots are provided, and the first and second registration marks include auxiliary marks for identifying the first and second registration marks.
摘要翻译：获得能够以简单的方式精确而准确地测量检查标记的半导体器件。半导体器件包括设置成围绕半导体衬底上的器件形成区域的器件形成区域和切割线区域。在切割线区域中，设置以不同镜头形成的第一和第二对准标记，并且第一和第二对准标记包括用于识别第一和第二对准标记的辅助标记。

4. 发明授权

US06521933B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06521933B2
公开(公告)日：2003-02-18
申请号：US09725852
申请日：2000-11-30
申请人： Takashi Miyajima , Masahiko Takeuchi
发明人： Takashi Miyajima , Masahiko Takeuchi
IPC分类号： H01L27108
CPC分类号： H01L27/10894 , H01L27/10852
摘要： In the drawn-out interconnection structure of the present invention, a storage node (SN) groove extending from a region, and a groove-shape drawn-out electrode is formed on the inner wall of storage node (SN) groove. An extended pad electrode portion extending from groove-shape drawn-out electrode is provided above storage node (SN) groove. Also provided is a contact plug that penetrates through extended pad electrode portion and that connects aluminum interconnection and extended pad electrode portion in a layer above extended pad electrode portion. With this arrangement, the structure of an interconnection drawn from an electrode of a semiconductor device can be obtained which allows the production of a cell transistor TEG capable of performing a reliable and stable measurement of the cell transistor characteristics.
摘要翻译：在本发明的拉出互连结构中，在存储节点（SN）槽的内壁上形成有从区域延伸的存储节点（SN）槽和槽形引出电极。从槽形拉出电极延伸的延伸焊盘电极部分设置在存储节点（SN）槽的上方。还提供一种接触插塞，其穿过延伸的焊盘电极部分并且将铝互连和延伸焊盘电极部分连接在延伸的焊盘电极部分上方的层中。通过这种布置，可以获得从半导体器件的电极拉出的互连结构，其允许制造能够执行电池晶体管特性的可靠和稳定测量的电池晶体管TEG。

5. 发明授权

US07363858B2 Printing apparatus with plate feeding mechanism having transport rollers 失效
标题翻译：具有送纸机构的印刷装置具有输送辊
公开(公告)号：US07363858B2
公开(公告)日：2008-04-29
申请号：US11079337
申请日：2005-03-15
申请人： Kenji Edamitsu , Masahiko Takeuchi
发明人： Kenji Edamitsu , Masahiko Takeuchi
IPC分类号： B41F27/12
CPC分类号： B41F27/1206 , B41P2227/62
摘要： A printing apparatus includes a printing plate feeder for feeding printing plates to a first plate cylinder. The printing plate feeder has a pair of transport rollers acting as a leveling roller and a driven roller. The leveling roller is fixed to a leveling roller rotary shaft extending parallel to a rotational axis of the first plate cylinder, and is opposed to middle and opposite end regions of the first plate cylinder. The leveling roller rotary shaft is connected to a driving device, a one-way clutch for permitting rotation only in a transport direction of the printing plates, and a torque transmission clutch acting as a loading device for applying a load to rotation in a direction opposite to the transport direction of the printing plates.
摘要翻译：印刷装置包括用于将印版供给到第一印版滚筒的印版进给器。印版进纸器具有一对作为调平辊和从动辊的输送辊。调平辊被固定到平行于第一印版滚筒的旋转轴线延伸的调平辊旋转轴，并与第一印版滚筒的中间和相对端区相对。调平辊旋转轴连接到驱动装置，单向离合器仅允许在印版的传送方向上旋转;以及扭矩传递离合器，用作加载装置，用于沿相反方向旋转载荷到印版的传送方向。

6. 发明授权

US06924192B2 Semiconductor device manufacturing method and semiconductor device 有权
公开(公告)号：US06924192B2
公开(公告)日：2005-08-02
申请号：US10697316
申请日：2003-10-31
申请人： Masahiko Takeuchi
发明人： Masahiko Takeuchi
IPC分类号： H01L23/522 , H01L21/02 , H01L21/768 , H01L21/8242 , H01L21/8247 , H01L27/04 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L28/65 , H01L21/7687 , H01L21/76877 , H01L27/105 , H01L27/10811 , H01L27/10852 , H01L27/10885 , H01L27/10888 , H01L27/10894 , H01L27/10897 , H01L28/91
摘要： A technique is provided which makes it possible to achieve both of a reduction in contact resistance in a memory device and a reduction in contact resistance in a logic device even when oxidation is performed during formation of dielectric films of capacitors. Conductive barrier layers (82) are provided in the top ends of contact plugs (83b) electrically connected to ones of source/drain regions (59). Lower electrodes (70) of capacitors (73) are formed in contact with the conductive barrier layers (82) of the contact plugs (83b) and then dielectric films (71) and upper electrodes (72) of the capacitors (73) are sequentially formed. In the logic region, contact plugs (25) are formed in an upper layer so that they are in contact respectively with contact plugs (33) electrically connected to source/drain regions (9).

7. 发明授权

US06765256B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06765256B2
公开(公告)日：2004-07-20
申请号：US10370657
申请日：2003-02-24
申请人： Masahiko Takeuchi , Takashi Dokan
发明人： Masahiko Takeuchi , Takashi Dokan
IPC分类号： H01L27108
CPC分类号： H01L27/10894 , H01L27/10814 , H01L27/10882
摘要： A semiconductor device includes: lower storage node electrodes provided on a main surface of a silicon substrate; a dielectric film provided on the lower storage node electrodes; an upper cell plate electrode provided on the dielectric film; and an interlayer insulating film covering the upper cell plate electrode. The upper cell plate electrode contains ruthenium. The interlayer insulating film has a contact hole reaching the upper cell plate electrode. The contact hole is provided so that the distance between the main surface of the silicon substrate and the bottom face of the contact hole is not less than the distance between the main surface of the silicon substrate and the bottom face of the upper cell plate electrode. A semiconductor device is provided wherein contact defects in the upper electrode and the generation of an area penalty are prevented.
摘要翻译：半导体器件包括：设置在硅衬底的主表面上的下部存储节点电极; 设置在下部存储节点电极上的电介质膜; 设置在电介质膜上的上电池板电极; 以及覆盖上电池板电极的层间绝缘膜。上电池板电极含有钌。层间绝缘膜具有到达上电池板电极的接触孔。接触孔设置成使得硅衬底的主表面和接触孔的底面之间的距离不小于硅衬底的主表面和上电池板电极的底面之间的距离。提供一种半导体器件，其中防止上电极中的接触缺陷和产生区域损失。

8. 发明授权

US5763921A Semiconductor device including retrograde well structure with suppressed substrate bias effects 失效
标题翻译：包括具有抑制衬底偏置效应的逆行井结构的半导体器件
公开(公告)号：US5763921A
公开(公告)日：1998-06-09
申请号：US645700
申请日：1996-05-14
申请人： Yoshinori Okumura , Masahiko Takeuchi , Hideaki Arima
发明人： Yoshinori Okumura , Masahiko Takeuchi , Hideaki Arima
IPC分类号： H01L21/76 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L27/0928 , H01L21/823807
摘要： An n well and a p well are formed in a silicon substrate. The n well has n type impurity concentration peaks and a p type impurity concentration peak. The p well has p type concentration peaks. The impurity concentration peaks serving as channel stopper regions for isolating elements exist only in proximity to the lower surface of an isolation oxide film but not in element regions.
摘要翻译：在硅衬底中形成n阱和p阱。 n阱具有n型杂质浓度峰和p型杂质浓度峰。 p阱具有p型浓度峰。作为用于隔离元件的通道阻挡区域的杂质浓度峰值仅存在于隔离氧化膜的下表面附近，而不存在于元件区域中。

9. 发明授权

US08981422B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08981422B2
公开(公告)日：2015-03-17
申请号：US13367858
申请日：2012-02-07
申请人： Masahiko Takeuchi
发明人： Masahiko Takeuchi
IPC分类号： H01L21/82 , H01L27/11 , H01L21/768 , H01L27/02
CPC分类号： H01L27/1104 , H01L21/76834 , H01L21/76895 , H01L27/0207 , H01L29/42356
摘要： To prevent contact plugs formed to sandwich an abutting portion between gate electrodes, from being short-circuited via a void formed inside an insulating film of the abutting portion. Over sidewalls SW facing each other in the abutting portion between gate electrodes G2 and G5, a liner insulating film 6 and an interlayer insulating film 7 are formed. Between the sidewalls SW, the liner insulating film 6 formed on each of the side walls of the sidewalls SW are brought in contact with each other to close a space between the sidewalls SW to prevent a void from being generated inside the interlayer insulating film 7 and the liner insulating film 6.
摘要翻译：为了防止形成的接触插塞夹在栅电极之间的邻接部分，经由形成在邻接部分的绝缘膜内部的空隙而短路。在栅电极G2和G5之间的邻接部分中彼此面对的侧壁SW，形成衬垫绝缘膜6和层间绝缘膜7。在侧壁SW之间，形成在侧壁SW的每个侧壁上的衬里绝缘膜6彼此接触以封闭侧壁SW之间的空间，以防止在层间绝缘膜7内产生空隙，衬垫绝缘膜6。

10. 发明授权

US08120116B2 Semiconductor device and photomask 有权
标题翻译：半导体器件和光掩模
公开(公告)号：US08120116B2
公开(公告)日：2012-02-21
申请号：US12341664
申请日：2008-12-22
申请人： Masahiko Takeuchi
发明人： Masahiko Takeuchi
IPC分类号： H01L21/70
CPC分类号： H01L27/1104 , H01L21/76895 , H01L27/0207 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L29/4238
摘要： Shared contact holes SC1 and SC2 reach both gate electrode layers GE1 and GE2 and a drain region PIR. In a planar view, a sidewall E2 of gate electrode layers GE1 and GE2 is shifted toward a side of a sidewall E4 from a virtual extended line E1a of the sidewall E1. In a planar view, a center line of a line width D1 in a portion that shared contact holes SC1 and SC2 of gate electrode layers GE1 and GE2 reach is located while shifted with respect to a center line of a line width D2 in a portion located on channel formation regions CHN1 and CHN2 of gate electrode layers GE1 and GE2. Therefore, a semiconductor device and a photomask that can suppress an opening defect of the shared contact hole are obtained.
摘要翻译：共用接触孔SC1和SC2到达栅极电极层GE1和GE2以及漏极区PIR。在平面图中，栅电极层GE1和GE2的侧壁E2从侧壁E1的虚拟延伸线E1a向侧壁E4侧移动。在平面图中，在共享接触孔电极层GE1和GE2的共用接触孔SC1和SC2的部分中的线宽度D1的中心线位于相对于线宽度D2的中心线偏移的位置在栅极电极层GE1和GE2的沟道形成区域CHN1和CHN2上。因此，可以获得可以抑制共享接触孔的开口缺陷的半导体器件和光掩模。

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