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1. 发明申请

US20080272454A1 Light-Collecting Device, Solid-State Imaging Apparatus and Method of Manufacturing Thereof 有权
标题翻译：光收集装置，固态成像装置及其制造方法
公开(公告)号：US20080272454A1
公开(公告)日：2008-11-06
申请号：US11658666
申请日：2005-09-01
申请人： Kimiaki Toshikiyo , Kazutoshi Onozawa , Daisuke Ueda , Taku Goubara
发明人： Kimiaki Toshikiyo , Kazutoshi Onozawa , Daisuke Ueda , Taku Goubara
IPC分类号： H01L21/64 , G02F1/01 , H01L27/14
CPC分类号： G02B5/1876 , G02B5/1885 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/02327
摘要： It is realized a high sensitive solid-state imaging apparatus which corresponds to an optical system having a short focal length (an optical system having a large incident angle θ).Each pixel (2.8 mm square in size) includes a distributed refractive index lens (1), a color filter (2) for green, Al wirings (3), a signal transmitting unit (4), a planarized layer (5), a light-receiving element (Si photodiode) (6), and an Si substrate (7). The concentric circle structure of the distributed index lens is made of four types of materials having different refractive indexes such as TiO2 (n=2.53), SiN (n=2.53), SiO2 (n=2.53), and air (n=1.0). In the concentric structure, a radial difference of outer peripheries of adjacent circular light-transmitting films is 100 nm. Furthermore, the film thickness is 0.4 μm.
摘要翻译：实现了对应于具有短焦距的光学系统（具有大的入射角θ的光学系统）的高灵敏度固态成像装置。每个像素（尺寸为2.8mm正方形）包括分布折射率透镜（1），用于绿色的滤色器（2），Al布线（3），信号传输单元（4），平坦化层（5），光接收元件（Si光电二极管）（6）和Si衬底（7）。分布式折射率透镜的同心圆结构由具有不同折射率的四种材料制成，例如TiO 2（n = 2.53），SiN（n = 2.53），SiO 2 /SUB>(n=2.53）和空中（n = 1.0）。在同心结构中，相邻圆形透光膜的外周的径向差为100nm。此外，膜厚度为0.4μm。

2. 发明授权

US07667286B2 Light-collecting device, solid-state imaging apparatus and method of manufacturing thereof 有权
标题翻译：光收集装置，固态成像装置及其制造方法
公开(公告)号：US07667286B2
公开(公告)日：2010-02-23
申请号：US11658666
申请日：2005-09-01
申请人： Kimiaki Toshikiyo , Kazutoshi Onozawa , Daisuke Ueda , Taku Goubara
发明人： Kimiaki Toshikiyo , Kazutoshi Onozawa , Daisuke Ueda , Taku Goubara
IPC分类号： H01L31/0232
CPC分类号： G02B5/1876 , G02B5/1885 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/02327
摘要： A high sensitive solid-state imaging apparatus which corresponds to an optical system has a short focal length (an optical system having a large incident angle θ). Each pixel (2.8 mm square in size) includes a distributed refractive index lens, a color filter for green, Al wirings, a signal transmitting unit, a planarized layer, a light-receiving element (Si photodiode), and an Si substrate. The concentric circle structure of the distributed index lens is made of four types of materials having different refractive indexes such as TiO2 (n=2.53), SiN (n=2.53), SiO2 (n=2.53), and air (n=1.0). In the concentric structure, a radial difference of outer peripheries of adjacent circular light-transmitting films is 100 nm. Furthermore, the film thickness is 0.4 νm.
摘要翻译：对应于光学系统的高灵敏度固态成像装置具有短焦距（具有大入射角的光学系统）。每个像素（尺寸为2.8mm正方形）包括分布折射率透镜，绿色滤色器，Al布线，信号传输单元，平面化层，光接收元件（Si光电二极管）和Si衬底。分布式折射率透镜的同心圆结构由诸如TiO 2（n = 2.53），SiN（n = 2.53），SiO 2（n = 2.53）和空气（n = 1.0）的折射率不同的四种材料制成，。在同心结构中，相邻圆形透光膜的外周的径向差为100nm。此外，膜厚度为0.4μm。

3. 发明授权

US07860352B2 Light-collecting apparatus and contact-type solid-state imaging apparatus using the same 失效
标题翻译：集光装置和使用其的接触型固体摄像装置
公开(公告)号：US07860352B2
公开(公告)日：2010-12-28
申请号：US11423803
申请日：2006-06-13
申请人： Kimiaki Toshikiyo , Motohiro Kojima , Kazutoshi Onozawa
发明人： Kimiaki Toshikiyo , Motohiro Kojima , Kazutoshi Onozawa
IPC分类号： G02F1/01 , H01J3/14 , G01J1/04 , G01N21/00
CPC分类号： H04N1/0311 , G02B3/0087 , G02B5/1876 , G02B5/1885 , H04N1/0282 , H04N1/0312
摘要： The present invention provides a contact-type solid-state imaging apparatus which realizes high resolution and high sensitivity, and also implements downsizing and lowering the cost of the contact-type solid-state imaging apparatus. Each pixel includes a protection glass plate, a light-collecting device, a light-receiving device, a semiconductor integrated circuit, a light emitting diode (LED) and a mounting package. The light-collecting apparatus has two kinds of distributed index lens (o lens and convex lens), and Sin (N=2) film, which is a two-stage concentric structure, is embedded in SiO2 (N=1.45) film.
摘要翻译：本发明提供了实现高分辨率和高灵敏度的接触型固态成像装置，并且还实现了小型化并降低了接触式固态成像装置的成本。每个像素包括保护玻璃板，集光装置，光接收装置，半导体集成电路，发光二极管（LED）和安装封装。集光装置具有两种分布式折射率透镜（o透镜和凸透镜），并且作为两级同心结构的Sin（N = 2）膜嵌入SiO 2（N = 1.45）膜中。

4. 发明授权

US07692129B2 Solid-state imaging device with light-collecting device having sub-wavelength periodic structure, solid-state imaging apparatus and manufacturing method thereof 有权
标题翻译：具有亚波长周期结构的光收集装置的固态成像装置，固态成像装置及其制造方法
公开(公告)号：US07692129B2
公开(公告)日：2010-04-06
申请号：US11423776
申请日：2006-06-13
申请人： Kimiaki Toshikiyo , Takanori Yogo , Motonori Ishii , Toshinobu Matsuno , Kazutoshi Onozawa
发明人： Kimiaki Toshikiyo , Takanori Yogo , Motonori Ishii , Toshinobu Matsuno , Kazutoshi Onozawa
IPC分类号： H01L27/00
CPC分类号： H01L27/14627 , H01L27/14685
摘要： The present invention provides a solid-state imaging apparatus and the like which is able to support an optical system whose incident angle is wide. Each pixel is 2.25 μm square in size, and includes a distributed index lens (1), a color filter (for example, for green) (2), an Al interconnections (3), a signal transmitting unit (4), a planarized layer (5), a light-receiving device (Si photodiodes) (6), and an Si substrate (7). The two-stage concentric circle structure of the distributed index lens is formed by SiO2 (n=2) with the film thickness 1.2 μm (“grey color”), the film thickness 0.8 μm (“dots pattern”) and the film thickness of 0 μm (“without pattern: white color”), and the medium surrounding the distributed index lens (1)is air (n=1).
摘要翻译：本发明提供能够支持入射角较宽的光学系统的固体摄像装置等。每个像素的尺寸为2.25μm正方形，并且包括分布式折射率透镜（1），滤色器（例如，绿色）（2），Al互连（3），信号发送单元（4），平面化层（5），光接收装置（Si光电二极管）（6）和Si衬底（7）。分布式折射率透镜的两级同心圆结构由SiO 2（n = 2）形成，膜厚为1.2μm（“灰色”），膜厚为0.8μm（“点图案”），膜厚为 0μm（“无图案：白色”），分布式折射率透镜（1）周围的介质为空气（n = 1）。

5. 发明授权

US07768711B2 Manufacturing method of light-collecting device, light-collecting device and phase shift mask 有权
标题翻译：集光装置，集光装置和相移掩模的制造方法
公开(公告)号：US07768711B2
公开(公告)日：2010-08-03
申请号：US11423989
申请日：2006-06-14
申请人： Motonori Ishii , Kazutoshi Onozawa , Toshinobu Matsuno , Takanori Yogo , Kimiaki Toshikiyo
发明人： Motonori Ishii , Kazutoshi Onozawa , Toshinobu Matsuno , Takanori Yogo , Kimiaki Toshikiyo
IPC分类号： G02B3/00
CPC分类号： G02B5/1847 , G02B5/1876 , G02B5/1885 , G02B27/4205
摘要： The present invention provides a method of manufacturing a lens, in which the method includes exposing a photoresist to light using a phase shift mask. Here, the phase shift mask includes layout portions respectively corresponding to pixels and lens, in which each of the layout portions has: a light-blocking portion which has a shape of a substantially circle or a substantially concentric zone; a light-transmitting portion which has a shape of a substantially circle or a substantially concentric zone; a phase shift portion which has a shape of a substantially circle or a substantially concentric zone; and a light-blocking frame. Furthermore, the light-transmitting portion, the light-blocking portion and the phase shift portion are arranged alternately so as to form concentric circles, and the light-blocking frame corresponds to a whole or a part of a perimeter of the lens.
摘要翻译：本发明提供一种制造透镜的方法，其中所述方法包括使用相移掩模将光致抗蚀剂曝光。这里，相移掩模包括分别对应于像素和透镜的布局部分，其中每个布局部分具有：具有基本圆形或基本同心的形状的遮光部分; 具有基本上圆形或大体上同心的形状的透光部分; 相移部，其具有大致圆形或大致同心的区域的形状; 和遮光框架。此外，光透射部分，遮光部分和相移部分交替地布置以形成同心圆，并且遮光框对应于透镜的周边的全部或一部分。

6. 发明授权

US07846620B2 Phase shift mask and method for manufacturing light-collecting device 失效
标题翻译：相移掩模和制造集光装置的方法
公开(公告)号：US07846620B2
公开(公告)日：2010-12-07
申请号：US11860756
申请日：2007-09-25
申请人： Motonori Ishii , Kazutoshi Onozawa , Kimiaki Toshikiyo , Toshinobu Matsuno , Takanori Yogo
发明人： Motonori Ishii , Kazutoshi Onozawa , Kimiaki Toshikiyo , Toshinobu Matsuno , Takanori Yogo
IPC分类号： G03F1/00
CPC分类号： G03F7/0005 , G03F1/30
摘要： The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.
摘要翻译：根据本发明的相移掩模是用于制造半导体器件的相移掩模。相移掩模包括遮光部分，透光部分，相移部分和辅助图案部分，遮光部分，透光部分，相移部分和辅助图案部分其中所述辅助图形部分在半径方向上的宽度小于所述透光部分的宽度和所述相移部分在半径方向上的宽度。此外，通过辅助图案部分的曝光光的相位可能与通过透光部分或相移部分的曝光光的相位相反，透光部分或相移部分最靠近辅助图案部分。

7. 发明授权

US07663084B2 Solid-state imager and solid-state imaging apparatus having a modulated effective refractive index distribution and manufacturing method thereof 有权
$Solid-state imager and solid-state imaging apparatus having a modulated effective refractive index distribution and manufacturing method thereof$
标题翻译：具有调制的有效折射率分布的固态成像器和固态成像装置及其制造方法
公开(公告)号：US07663084B2
公开(公告)日：2010-02-16
申请号：US12189971
申请日：2008-08-12
申请人： Kimiaki Toshikiyo , Takanori Yogo , Motonori Ishii , Toshinobu Matsuno , Kazutoshi Onozawa
发明人： Kimiaki Toshikiyo , Takanori Yogo , Motonori Ishii , Toshinobu Matsuno , Kazutoshi Onozawa
IPC分类号： H01L27/00
CPC分类号： H01L27/14627 , H01L27/14685
摘要： A solid-state imaging apparatus includes a plurality of unit pixels with associated microlenses arranged in a two-dimensional array. Each microlens includes a distributed index lens with a modulated effective refractive index distribution obtained by including a combination of a plurality of patterns having a concentric structure, the plurality of patterns being divided into line widths equal to or shorter than a wavelength of an incident light. At least one of the plurality of patterns includes a lower light-transmitting film having the concentric structure and a first line width and a first film thickness, and an upper light-transmitting film having the concentric structure configured on the lower light-transmitting film having a second line width and a second film thickness. The distributed index lens has a structure in which a refractive index material is dense at a center and becomes sparse gradually toward an outer side in the concentric structure.
摘要翻译：固态成像装置包括具有以二维阵列排列的相关联的微透镜的多个单位像素。每个微透镜包括具有调制的有效折射率分布的分布式折射率透镜，通过包括具有同心结构的多个图案的组合而获得，所述多个图案被划分成等于或短于入射光的波长的线宽。多个图案中的至少一个图案包括具有同心结构且第一线宽度和第一膜厚度的下部透光膜，以及具有同心结构的上部透光膜，其在下部透光膜上具有第二线宽度和第二膜厚度。分布式折射率透镜具有其中折射率材料在中心处致密并且在同心结构中朝向外侧逐渐变稀的结构。

8. 发明授权

US07586530B2 Solid-state imaging device including pixels arranged in a two-dimensional array 有权
标题翻译：固态成像装置，包括以二维阵列排列的像素
公开(公告)号：US07586530B2
公开(公告)日：2009-09-08
申请号：US11234258
申请日：2005-09-26
申请人： Kazutoshi Onozawa , Daisuke Ueda , Shinji Yoshida
发明人： Kazutoshi Onozawa , Daisuke Ueda , Shinji Yoshida
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/2254 , H04N5/2253
摘要： The present invention provides a solid-state imaging device including an optical element that efficiently condenses even wide-angle incident light and has a color separation function. The solid-state imaging device includes pixels, and in the device each pixel includes: a light receiving element; and an optical element, whose surface, at least, is made of metal, the optical element has: an aperture; and convex parts which are arranged cyclically, and a distance between adjacent convex parts and a width of each convex part range from 0 to 1 wavelength of the light to be condensed.
摘要翻译：本发明提供了一种固态成像装置，其包括有效地冷凝甚至广角入射光并具有分色功能的光学元件。固态成像装置包括像素，并且在该装置中，每个像素包括：光接收元件; 以及光学元件，其表面至少由金属制成，所述光学元件具有：孔; 周向布置的凸部和相邻的凸部之间的距离和每个凸部的宽度的范围为待冷凝的光的0〜1波长。

9. 发明授权

US07579593B2 Night-vision imaging apparatus, control method of the same, and headlight module 有权
标题翻译：夜视成像装置，其控制方法和头灯模块
公开(公告)号：US07579593B2
公开(公告)日：2009-08-25
申请号：US11774088
申请日：2007-07-06
申请人： Kazutoshi Onozawa , Daisuke Ueda
发明人： Kazutoshi Onozawa , Daisuke Ueda
IPC分类号： H01L31/12
CPC分类号： B60Q1/0023 , G01S7/4811 , G01S7/4918 , G01S7/493 , G01S7/499 , G01S17/89 , G01S17/936 , H01L27/14643 , H01L27/148
摘要： The invention provides a night-vision imaging apparatus including: a light emission unit that emits infrared light; a solid-state imaging device that converts the infrared light into a first signal; a light-emission control unit that allows the light emission unit to emit the infrared light which is modulated according to a temporally pseudo-random first modulation; and an extraction unit that extracts, according to the first modulation, a signal corresponding to the infrared light emitted by the light emission unit from the first signal.
摘要翻译：本发明提供了一种夜视成像装置，包括：发射红外光的发光单元; 将所述红外光转换为第一信号的固态成像装置; 发光控制单元，其允许发光单元发射根据时间上伪随机的第一调制被调制的红外光; 以及提取单元，根据第一调制，从第一信号中提取与由发光单元发射的红外光相对应的信号。

10. 发明授权

US06919641B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06919641B2
公开(公告)日：2005-07-19
申请号：US10462744
申请日：2003-06-17
申请人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
发明人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01S5/022 , H01L25/075 , H01S5/02 , H01S5/40 , H01L23/52
CPC分类号： H01L24/95 , H01L25/0753 , H01L2224/95085 , H01L2224/95146 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01033 , H01L2924/01049 , H01L2924/10329 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/15165 , H01S5/02252 , H01S5/4031 , H01L2924/15153 , H01L2924/00
摘要： A semiconductor device includes: a substrate having in its principal surface first and second recessed portions formed adjacent to each other; and first and second semiconductor laser chips each having a portion that is inserted in one of the recessed portions. The depth of the recessed portions is smaller than the height of the first and second semiconductor laser chips that are disposed in the recessed portions.
摘要翻译：半导体器件包括：基板，其主表面具有彼此相邻形成的第一和第二凹部; 以及第一和第二半导体激光器芯片，每个半导体激光器芯片具有插入到一个凹部中的一部分。凹部的深度小于设置在凹部中的第一和第二半导体激光器芯片的高度。

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