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1. 发明授权

US5086133A Process for producing highly water absorptive polymer 失效
标题翻译：生产高吸水性聚合物的方法
公开(公告)号：US5086133A
公开(公告)日：1992-02-04
申请号：US703047
申请日：1991-05-17
申请人： Kiichi Itoh , Takeshi Shibano , Kenji Yoshinaga
发明人： Kiichi Itoh , Takeshi Shibano , Kenji Yoshinaga
IPC分类号： C08F2/30 , A61L15/60 , C08F20/52 , C08F26/06 , C08F220/06 , C08F220/56 , C08F226/06
CPC分类号： C08F220/06 , A61L15/60 , Y10S526/943
摘要： There is provided a process for producing a highly water absorptive polymer, which comprises making up a mixture (A) comprising an aqueous solution of (a) a partially neutralized product of acrylic acid with 20% or more of carboxylic groups being neutralized to an alkali metal salt or ammonium salt, (b) a crosslinking agent having two or more copolymerizable vinyl groups in one molecule, (c) a basic vinyl monomer in a quantity of 20 mol % or less based on said partially neutralized product of acrylic acid, (d) a nonionic surfactant with HLB of 7 or more and (e) an oxidative radical polymerization initiator, said mixture (A) being maintained at a temperature of 50.degree. C. or lower, and a mixture (B) comprising an amine or a reducing agent dissolved in water or in said mixture (A) from which at least the component (e) is removed, and mixing both the mixtures to cause polymerization.

2. 发明授权

US5059664A Process for the preparation of water absorptive resin 失效
标题翻译：吸水树脂的制备工艺
公开(公告)号：US5059664A
公开(公告)日：1991-10-22
申请号：US369820
申请日：1989-06-22
申请人： Shuhei Yada , Takeshi Shibano , Kiichi Itoh , Kenji Yoshinaga
发明人： Shuhei Yada , Takeshi Shibano , Kiichi Itoh , Kenji Yoshinaga
IPC分类号： B01J19/12 , B01J19/24 , B01J19/26 , C08F2/10 , C08F2/34
CPC分类号： C08F2/10 , B01J19/123 , B01J19/2465 , B01J19/26 , C08F2/34 , B01J2219/00094 , B01J2219/00108 , B01J2219/00132 , B01J2219/00254 , Y10S526/913 , Y10S526/915
摘要： A process for the preparation of water absorptive resins which comprises supplying a solution containing at least 20% by weight of a water soluble ethylenically unsaturated monomer as a main component to a polymerization vessel accommodating a vapor phase comprising steam or a mixture of steam with at least one gas substantially inert with respect to polymerization, and polymerizing the monomer in the vapor phase under the relative humidity conditions in the vapor phase of 30% or more.
摘要翻译：一种制备吸水树脂的方法，其包括将含有至少20重量％的水溶性烯属不饱和单体作为主要成分的溶液供应到聚合容器中，所述聚合容器容纳包含蒸汽或蒸汽混合物的气相至少一种相对于聚合基本上惰性的气体，并且在气相的相对湿度条件下使气相中的单体聚合30％以上。

3. 发明授权

US5202400A Process for the production of highly water absorptive polymers 失效
标题翻译：生产高吸水性聚合物的方法
公开(公告)号：US5202400A
公开(公告)日：1993-04-13
申请号：US746991
申请日：1991-08-19
申请人： Kiichi Itoh , Shuhei Yada , Kenji Yoshinaga
发明人： Kiichi Itoh , Shuhei Yada , Kenji Yoshinaga
IPC分类号： C08F2/24 , C08F2/32
CPC分类号： C08F2/32
摘要： A process for producing a highly water absorptive polymer by polymerizing a water-soluble, ethylenically unsaturated monomer in a water-in-oil type of dispersion consisting of the dispersion phase of an aqueous monomer solution comprising the water-soluble, ethylenically unsaturated monomer, water, a water-soluble polymerization initiator and an optional water-soluble crosslinking agent and the continuous phase of an organic solvent containing a dispersant, characterized in that the aqueous monomer solution is added to the organic solvent at such a temperature as to form an oil-in-water type of dispersion, and the oil-in-water type of dispersion is then heated at least to a phase reversal temperature at which it is transformed into the water-in-oil type of dispersion.

4. 发明授权

US5185413A Process for producing highly water-absortive polymers 失效
标题翻译：生产高水不溶性聚合物的方法
公开(公告)号：US5185413A
公开(公告)日：1993-02-09
申请号：US824870
申请日：1992-01-22
申请人： Kenji Yoshinaga , Toshiko Nakamura , Kiichi Itoh
发明人： Kenji Yoshinaga , Toshiko Nakamura , Kiichi Itoh
IPC分类号： A61L15/60 , C08F2/00 , C08F20/04
CPC分类号： C08F20/04 , A61L15/60
摘要： There is provided a process for producing a substantially water-insoluble, highly water-absorptive polymer which comprises subjecting an aqueous solution of a monomer comprising as a main component acrylic acid and/or its alkali metal salt to polymerization in the presence of a hypophosphorous acid compound.
摘要翻译：提供了一种生产基本上不溶于水的高吸水性聚合物的方法，该方法包括使含有主要组分丙烯酸和/或其碱金属盐的单体的水溶液在次磷酸存在下进行聚合复合。

5. 发明授权

US08451678B2 Semiconductor device including internal voltage generation circuit 失效
标题翻译：半导体器件包括内部电压产生电路
公开(公告)号：US08451678B2
公开(公告)日：2013-05-28
申请号：US13080114
申请日：2011-04-05
申请人： Mihoko Akiyama , Futoshi Igaue , Kenji Yoshinaga , Masashi Matsumura , Fukashi Morishita
发明人： Mihoko Akiyama , Futoshi Igaue , Kenji Yoshinaga , Masashi Matsumura , Fukashi Morishita
IPC分类号： G11C5/14
CPC分类号： G05F1/468 , G11C5/025 , G11C5/147
摘要： A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.
摘要翻译：半导体集成电路器件具有设置在每个用于六个存储器宏的电源电路单元的负电压产生电路。因此，相对于负电压的变化的响应增加。在待机模式下，通过开关电路连接六个存储器宏的负电压供给线，并且仅在六个电源电路单元的六个负电压产生电路中仅一个电源电路单元的负电压产生电路活性。因此，可以防止待机电流的增加。

6. 发明授权

US06575554B2 Ink jet recording apparatus 失效
标题翻译：喷墨记录装置
公开(公告)号：US06575554B2
公开(公告)日：2003-06-10
申请号：US09968895
申请日：2001-10-03
申请人： Kenji Yoshinaga
发明人： Kenji Yoshinaga
IPC分类号： B41J2165
CPC分类号： B41J11/0065 , B41J2/1721 , B41J2002/1728
摘要： An ink jet recording apparatus is provided which can perform high-quality recording without causing a backside smear of a recording medium even in frameless recording where an image is recorded in full size until reaching lengthwise and widthwise ends of the recording medium. In an ink jet recording apparatus for ejecting ink from an ink jet recording head to a recording medium to record an image, the apparatus includes a platen for supporting the recording medium in a position opposed to the ink jet recording head, an ink recovery section for recovering ink ejected outside an end of the recording medium, a common negative pressure chamber for generating a pressure in the ink recovery section lower than the atmospheric pressure, and an air stream passage for communicating the ink recovery section and the common negative pressure chamber with each other.
摘要翻译：提供了一种喷墨记录装置，其可以进行高质量的记录，而不会导致记录介质的背面涂抹，即使在无图像记录中，其中图像被记录为全尺寸，直到到达记录介质的纵向和横向端。在用于从喷墨记录头将墨水喷射到记录介质以记录图像的喷墨记录装置中，该装置包括用于将记录介质支撑在与喷墨记录头相对的位置的压板，用于回收在记录介质的端部外部喷射的油墨，用于产生低于大气压力的油墨回收部分中的压力的公共负压室，以及用于使油墨回收部分和公共负压室与每个其他。

7. 发明授权

US08310852B2 Content addressable memory 有权
公开(公告)号：US08310852B2
公开(公告)日：2012-11-13
申请号：US13419217
申请日：2012-03-13
申请人： Naoya Watanabe , Isamu Hayashi , Teruhiko Amano , Fukashi Morishita , Kenji Yoshinaga , Mihoko Akiyama , Shinya Miyazaki , Masakazu Ishibashi , Katsumi Dosaka
发明人： Naoya Watanabe , Isamu Hayashi , Teruhiko Amano , Fukashi Morishita , Kenji Yoshinaga , Mihoko Akiyama , Shinya Miyazaki , Masakazu Ishibashi , Katsumi Dosaka
IPC分类号： G11C15/00 , G11C15/04 , G11C7/14 , G11C7/06 , G11C7/12 , G11C7/22
CPC分类号： G11C15/043 , G11C7/06 , G11C7/12 , G11C7/14 , G11C7/22 , G11C15/04 , G11C15/046
摘要： An entry including multiple bits of unit cells each storing data bit is coupled to a match line. The match line is supplied with a charging current having a restricted current value smaller than a match line current flowing in a one-bit miss state in one entry, but larger than a match line current flowing in an all-bit match state in one entry. A precharge voltage level of a match line is restricted to a voltage level of half a power supply voltage or smaller. Power consumption in a search cycle of a content addressable memory can be reduced, and a search operation speed can be increased.

8. 发明授权

US08014224B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08014224B2
公开(公告)日：2011-09-06
申请号：US12201024
申请日：2008-08-29
申请人： Kenji Yoshinaga , Fukashi Morishita
发明人： Kenji Yoshinaga , Fukashi Morishita
IPC分类号： G11C5/14
CPC分类号： G11C5/147
摘要： There is provided a semiconductor device supplied with internal power generated by an internal power generation circuit to perform a stable operation and, also, suppress power consumption. A control circuit, a row/column decoder and a sense amplifier are driven by an internal buck voltage. On the other hand, a data path with high power consumption is driven by an external power supply voltage. A level conversion circuit receives an address signal or a command signal having a voltage level of the external power supply voltage, converts the voltage level to the internal buck voltage, and outputs a resultant signal to the control circuit. A level conversion circuit receives a control signal having a voltage level of the internal buck voltage from the control circuit, converts the voltage level to the external power supply voltage, and outputs a resultant signal to the data path.
摘要翻译：提供了由内部发电电路产生的内部电力提供的半导体器件，以执行稳定的操作，并且还抑制功耗。控制电路，行/列解码器和读出放大器由内部降压电压驱动。另一方面，具有高功耗的数据路径由外部电源电压驱动。电平转换电路接收具有外部电源电压的电压电平的地址信号或指令信号，将电压电平转换为内部降压电压，并将结果信号输出到控制电路。电平转换电路从控制电路接收具有内部降压电压的电压电平的控制信号，将电压电平转换为外部电源电压，并将结果信号输出到数据路径。

9. 发明申请

US20110182131A1 SEMICONDUCTOR DEVICE INCLUDING INTERNAL VOLTAGE GENERATION CIRCUIT 失效
标题翻译：包括内部电压发生电路的半导体器件
公开(公告)号：US20110182131A1
公开(公告)日：2011-07-28
申请号：US13080114
申请日：2011-04-05
申请人： Mihoko Akiyama , Futoshi Igaue , Kenji Yoshinaga , Masashi Matsumura , Fukashi Morishita
发明人： Mihoko Akiyama , Futoshi Igaue , Kenji Yoshinaga , Masashi Matsumura , Fukashi Morishita
IPC分类号： G11C5/14
CPC分类号： G05F1/468 , G11C5/025 , G11C5/147
摘要： A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.
摘要翻译：半导体集成电路器件具有设置在每个用于六个存储器宏的电源电路单元的负电压产生电路。因此，相对于负电压的变化的响应增加。在待机模式下，通过开关电路连接六个存储器宏的负电压供给线，并且仅在六个电源电路单元的六个负电压产生电路中仅一个电源电路单元的负电压产生电路活性。因此，可以防止待机电流的增加。

10. 发明授权

US07408818B2 Semiconductor device undergoing defect detection test 失效
标题翻译：半导体器件进行缺陷检测测试
公开(公告)号：US07408818B2
公开(公告)日：2008-08-05
申请号：US11703672
申请日：2007-02-08
申请人： Kenji Yoshinaga , Masashi Matsumura , Futoshi Igaue , Mihoko Akiyama , Fukashi Morishita
发明人： Kenji Yoshinaga , Masashi Matsumura , Futoshi Igaue , Mihoko Akiyama , Fukashi Morishita
IPC分类号： G11C11/34
CPC分类号： G11C29/48 , G11C29/12 , G11C29/12005
摘要： A semiconductor device has a first operation mode and a second operation mode in which power supply with a higher voltage value than that in the first operation mode is provided. The semiconductor device includes a memory portion having memory cells for storing data and a power supply circuit portion supplying a first voltage and a second voltage to the memory portion. The memory portion writes or reads data to or from the memory cells based on the first voltage and the second voltage, and the power supply circuit portion provides a smaller voltage difference between the first voltage and the second voltage in the second operation mode as compared with the voltage difference in the first operation mode.
摘要翻译：半导体器件具有第一操作模式和第二操作模式，其中提供具有比第一操作模式中更高的电压值的电源。半导体器件包括具有用于存储数据的存储单元的存储器部分和向存储器部分提供第一电压和第二电压的电源电路部分。存储器部分基于第一电压和第二电压将数据写入或从存储器单元读取数据，并且电源电路部分在第二操作模式中在第一电压和第二电压之间提供较小的电压差，与第在第一操作模式下的电压差。

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