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1. 发明授权

US07612339B2 Optoconductive compound and method of producing the same 有权
标题翻译：导电性化合物及其制造方法
公开(公告)号：US07612339B2
公开(公告)日：2009-11-03
申请号：US11950650
申请日：2007-12-05
申请人： Kibong Song , Kyeongam Kim , Sang Su Lee , Doo-Hee Cho
发明人： Kibong Song , Kyeongam Kim , Sang Su Lee , Doo-Hee Cho
IPC分类号： G01J5/00
CPC分类号： C01B19/002 , C01P2002/72 , C01P2006/60
摘要： Conventional optoconductive compounds, such as CIS or CdTe include scarce indium or environmentally-unfriendly cadmium. On the other hand, an optoconductive compound according to the present invention has high optoconductive efficiency without inclusion of indium and cadmium, wherein the optoconductive compound according to the present invention is represented by AXYY′ where A is a Group 11 element, X is a Group 15 element, and Y and Y′ are Group 16 elements in which Y and Y′ can be identical to or different from each other.
摘要翻译：常规的光电导化合物，如CIS或CdTe，包括稀少的铟或环境不友好的镉。另一方面，根据本发明的光导化合物在不包含铟和镉的情况下具有高的光导效率，其中根据本发明的光导化合物由AXYY'表示，其中A是第11族元素，X是基团 15元素，Y和Y'是Y和Y'可以相同或不同的16族元素。

2. 发明授权

US07851791B2 Thin film transistor having N-type and P-type CIS thin films and method of manufacturing the same 有权
标题翻译：具有N型和P型CIS薄膜的薄膜晶体管及其制造方法
公开(公告)号：US07851791B2
公开(公告)日：2010-12-14
申请号：US12027929
申请日：2008-02-07
申请人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
发明人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
IPC分类号： H01L29/267
CPC分类号： H01L29/78681 , H01L29/24
摘要： Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe2) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.
摘要翻译：提供了使用CIS（CuInSe2）的薄膜晶体管（TFT），其包括作为硫属元素材料的Se，并且可以提供二极管的电和光开关功能。根据本发明的TFT包括：基板，形成在基板的一部分上的栅电极，覆盖基板的绝缘层和栅极电极，形成在绝缘层上的多个CIS（CuInSe 2）膜，以便覆盖形成栅电极的区域; 和源极/漏极区域彼此分离，以便包括暴露CIS膜表面的一部分的沟槽。

3. 发明申请

US20080217610A1 THIN FILM TRANSISTOR HAVING N-TYPE AND P-TYPE CIS THIN FILMS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有N型和P型CIS薄膜的薄膜晶体管及其制造方法
公开(公告)号：US20080217610A1
公开(公告)日：2008-09-11
申请号：US12027929
申请日：2008-02-07
申请人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
发明人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
IPC分类号： H01L29/267 , H01L21/06
CPC分类号： H01L29/78681 , H01L29/24
摘要： Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe2) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.
摘要翻译：提供了使用包括作为硫属元素系材料的Se的CIS（CuInSe 2 N 2）的薄膜晶体管（TFT），并且可以提供整流功能，以及提供整流功能的电和光开关功能二极管。根据本发明的TFT包括：衬底，形成在衬底的一部分上的栅电极，覆盖衬底的绝缘层和栅电极，多个CIS（CuInSe 2/2）膜形成在绝缘层上以覆盖形成栅电极的区域; 和源极/漏极区域彼此分离，以便包括暴露CIS膜表面的一部分的沟槽。

4. 发明授权

US08084295B2 Thin film transistor having n-type and p-type CIS thin films and method of manufacturing the same 失效
标题翻译：具有n型和p型CIS薄膜的薄膜晶体管及其制造方法
公开(公告)号：US08084295B2
公开(公告)日：2011-12-27
申请号：US12938833
申请日：2010-11-03
申请人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
发明人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
IPC分类号： H01L21/06
CPC分类号： H01L29/78681 , H01L29/24
摘要： Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe2) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.
摘要翻译：提供了使用CIS（CuInSe2）的薄膜晶体管（TFT），其包括作为硫属元素材料的Se，并且可以提供二极管的电和光开关功能。根据本发明的TFT包括：基板，形成在基板的一部分上的栅电极，覆盖基板的绝缘层和栅极电极，形成在绝缘层上的多个CIS（CuInSe 2）膜，以便覆盖形成栅电极的区域; 和源极/漏极区域彼此分离，以便包括暴露CIS膜表面的一部分的沟槽。

5. 发明申请

US20080217547A1 ELECTRO-MEDICAL IMAGING APPARATUS HAVING CHALCOGEN-THIN FILM TRANSISTOR ARRAY 失效
标题翻译：具有薄膜薄膜晶体管阵列的电医学成像装置
公开(公告)号：US20080217547A1
公开(公告)日：2008-09-11
申请号：US12023822
申请日：2008-01-31
申请人： Sang Su Lee , Kibong Song
发明人： Sang Su Lee , Kibong Song
IPC分类号： G01T1/24 , H01L31/0272
CPC分类号： H01L27/14676 , G01T1/24 , H01L27/14632 , H01L27/14696 , H01L31/0272 , H01L31/0296 , H01L31/0749
摘要： Provided is an electro-medical imaging apparatus manufactured using a thin film transistor (TFT) array including chalcogen-based semiconductor elements that can generate and store an electric signal from an X-ray signal so as to be able to replace a traditional film type X-ray reader. The electro-medical imaging apparatus includes: a signal generating unit where electron-hole pairs are formed by absorbing an optical energy irradiated from outside; a power source connected to a surface of the signal generating unit and applies an electric signal so as to separate the electron-hole pairs to be accumulated each in opposite sides of the signal generating unit according to their polarities; a signal storage unit that is in contact with the signal generating unit and receives and stores one of the separated charges; and a signal converter that is in contact with the signal storage unit and applies a control signal to the signal storage unit in order to convert an electric signal, which generated by the charges stored in the signal storage unit, into an image signal. The signal generating unit may use amorphous selenium (a-Se), which is one of chalcogen materials, or CdTe or CdZnTe which is a compound material using chalcogen. Also, the signal storage unit may include a TFT array including Ge2Sb2Te5 (GST) or a TFT array including CuInSe2 (CIS).
摘要翻译：提供了一种使用包括基于硫族基的半导体元件的薄膜晶体管（TFT）阵列制造的电医学成像装置，其可以生成并存储来自X射线信号的电信号，以便能够代替传统的胶片类型X 阅读器电子医学成像装置包括：信号发生单元，其中通过吸收从外部照射的光能形成电子 - 空穴对; 电源，连接到所述信号发生单元的表面，并且施加电信号，以便根据它们的极性将每个信号发生单元的相对侧的每个电子 - 空穴对分离; 信号存储单元，其与所述信号生成单元接触并接收并存储所述分离的电荷之一; 以及信号转换器，其与信号存储单元接触并向信号存储单元施加控制信号，以便将由存储在信号存储单元中的电荷产生的电信号转换为图像信号。信号发生单元可以使用作为硫属元素材料之一的无定形硒（a-Se），或使用硫属元素的复合材料的CdTe或CdZnTe。此外，信号存储单元可以包括包括Ge 2 Sb 2 Te 5（GST）的TFT阵列或包括CuInSe _{2 （CIS）。}

6. 发明授权

US09133035B2 Method of manufacturing a graphene fiber 有权
标题翻译：制造石墨烯纤维的方法
公开(公告)号：US09133035B2
公开(公告)日：2015-09-15
申请号：US13619935
申请日：2012-09-14
申请人： Yong Ju Yun , Kibong Song
发明人： Yong Ju Yun , Kibong Song
IPC分类号： C01B31/04 , B82Y30/00 , B82Y40/00 , D01F9/12 , D01F6/60 , D01D5/00
CPC分类号： C01B31/0476 , B82Y30/00 , B82Y40/00 , C01B32/192 , D01D5/003 , D01F6/60 , D01F9/12
摘要： A method of manufacturing a graphene oxide composite fiber includes forming a supporting fiber having positive charges thereon; forming a solution containing graphene oxide having a negative charge thereon to provide a graphene oxide-containing solution; coating the supporting fiber with the graphene oxide-containing solution; and permitting self-assembly of the graphene oxide of the graphene oxide -containing solution and the supporting fiber by an attraction between the positive and negative charges to form the graphene oxide composite fiber. The method may include coating the supporting fiber with a solution containing a material having an amine group to provide a positive surface charge on the supporting fiber. The method may include reducing the graphene oxide composite fiber to a graphene composite fiber, such as by one of a thermal reduction method, an optical reduction method, and a chemical reduction method. Large-area graphene fiber structures having high strength, flexibility, and porosity are enabled.
摘要翻译：制造石墨烯氧化物复合纤维的方法包括在其上形成具有正电荷的支撑纤维; 在其上形成含有负电荷的石墨烯氧化物的溶液以提供含氧化石墨烯的溶液; 用含石墨烯氧化物溶液涂覆支撑纤维; 并且通过正电荷和负电荷之间的吸引力允许含石墨烯氧化物的溶液和支撑纤维的氧化石墨烯自组装以形成石墨烯氧化物复合纤维。该方法可以包括用含有胺基的材料的溶液涂覆支持纤维，以在支撑纤维上提供正表面电荷。该方法可以包括通过热还原法，光学还原法和化学还原法中的一种将石墨烯氧化物复合纤维还原成石墨烯复合纤维。能够实现具有高强度，柔性和孔隙率的大面积石墨烯纤维结构。

7. 发明授权

US06979406B2 Cantilever-type near-field probe for optical data storage and method of manufacturing the same 失效
标题翻译：用于光学数据存储的悬臂式近场探头及其制造方法
公开(公告)号：US06979406B2
公开(公告)日：2005-12-27
申请号：US10327884
申请日：2002-12-26
申请人： Kibong Song , Eunkyoung Kim , Sung Qyu Lee , Kang Ho Park , Jun Ho Kim
发明人： Kibong Song , Eunkyoung Kim , Sung Qyu Lee , Kang Ho Park , Jun Ho Kim
IPC分类号： B44C1/22 , G01Q60/18 , G01Q60/22 , G01Q80/00 , G11B7/135 , G11B7/22 , G11B11/26 , H01L21/00 , H01L21/302 , H01L21/306 , H01L21/311
CPC分类号： G11B7/1387 , G01Q60/22 , G01Q80/00 , G11B7/22 , H01L21/30608 , H01L21/31116
摘要： Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.
摘要翻译：本发明公开了一种能够容易地提高光学通过量并被应用于光学数据存储器的头部的悬臂式近场探测器及其制造方法。在具有在其上部和下部形成为掩模层的电介质膜的硅衬底上形成氧化物膜，以及形成在上掩模层上并提供保持器功能的圆形电介质膜。通过利用由电介质膜产生的氧化膜的生长速度差而提供的鸟的峰值效应，探针的远端具有抛物线结构，从而形成初始探针。在从初始探针去除电介质膜之后，去除硅衬底的底表面，从而为探针提供具有高通量的近场孔径。

8. 发明申请

US20110120557A1 MANUFACTURING METHOD FOR THIN FILM TYPE LIGHT ABSORBING LAYER, MANUFACTURING METHOD FOR THIN FILM SOLAR CELL USING THEREOF AND THIN FILM SOLAR CELL 审中-公开
标题翻译：薄膜型光吸收层的制造方法，薄膜太阳能电池及其薄膜太阳能电池的制造方法
公开(公告)号：US20110120557A1
公开(公告)日：2011-05-26
申请号：US12817062
申请日：2010-06-16
申请人： Jeongdae SUH , Kibong Song , Changwoo Ham , Myungae Chung , Sungwon Sohn
发明人： Jeongdae SUH , Kibong Song , Changwoo Ham , Myungae Chung , Sungwon Sohn
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02631 , H01L31/0326 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Disclosed is a manufacturing method for a thin film type light absorbing layer of a solar cell. The manufacturing method for a light absorbing layer includes: filling CIGS crystal powder in an evaporation source of a chamber; simultaneously evaporating the CIGS crystal powder; and depositing the evaporated CIGS crystal powder on a substrate to form a CIGS thin film.
摘要翻译：公开了一种太阳能电池薄膜型光吸收层的制造方法。光吸收层的制造方法包括：在室的蒸发源中填充CIGS晶体粉末; 同时蒸发CIGS晶体粉末; 并将蒸发的CIGS晶体粉末沉积在基底上以形成CIGS薄膜。

9. 发明授权

US07606132B2 Cantilever-type near-field probe for optical data storage and method of manufacturing the same 失效
标题翻译：用于光学数据存储的悬臂式近场探头及其制造方法
公开(公告)号：US07606132B2
公开(公告)日：2009-10-20
申请号：US11247221
申请日：2005-10-12
申请人： Kibong Song , Eunkyoung Kim , Sung Qyu Lee , Kang Ho Park , Jun Ho Kim
发明人： Kibong Song , Eunkyoung Kim , Sung Qyu Lee , Kang Ho Park , Jun Ho Kim
IPC分类号： C23F1/00 , H01L21/00 , H01L29/06
CPC分类号： G11B7/1387 , G01Q60/22 , G01Q80/00 , G11B7/22 , H01L21/30608 , H01L21/31116
摘要： Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.
摘要翻译：本发明公开了一种能够容易地提高光学通过量并被应用于光学数据存储器的头部的悬臂式近场探测器及其制造方法。在具有在其上部和下部形成为掩模层的电介质膜的硅衬底上形成氧化物膜，以及形成在上掩模层上并提供保持器功能的圆形电介质膜。通过利用由电介质膜产生的氧化膜的生长速度差而提供的鸟的峰值效应，探针的远端具有抛物线结构，从而形成初始探针。在从初始探针去除电介质膜之后，去除硅衬底的底表面，从而为探针提供具有高通量的近场孔径。

10. 发明申请

US20130272950A1 METHOD OF MANUFACTURING A GRAPHENE FIBER 有权
标题翻译：制造石墨纤维的方法
公开(公告)号：US20130272950A1
公开(公告)日：2013-10-17
申请号：US13619935
申请日：2012-09-14
申请人： Yong Ju Yun , Kibong Song
发明人： Yong Ju Yun , Kibong Song
IPC分类号： D01F9/12 , C01B31/00 , B82Y30/00 , B82Y40/00
CPC分类号： C01B31/0476 , B82Y30/00 , B82Y40/00 , C01B32/192 , D01D5/003 , D01F6/60 , D01F9/12
摘要： Methods of easily manufacturing a large-area graphene fiber are provided. The method includes forming a supporting fiber, forming a graphene oxide-containing solution, coating the supporting fiber with the graphene oxide-containing solution to form a graphene oxide composite fiber, and separating the supporting fiber from the graphene oxide composite fiber. The large-area graphene fiber having high strength, high flexibility, and high porosity is easily manufactured to be applied in various fields including an environment field and an energy field.
摘要翻译：提供了容易制造大面积石墨烯纤维的方法。该方法包括形成支撑纤维，形成含氧化石墨烯的溶液，用含有氧化石墨烯的溶液涂覆支撑纤维以形成石墨烯氧化物复合纤维，并将支撑纤维与石墨烯氧化物复合纤维分离。容易制造具有高强度，高柔韧性和高孔隙率的大面积石墨烯纤维用于包括环境场和能量场在内的各种领域。

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